
AC        AC        27
     1 SweepVar        freq                       -1     Name of variable or parameter to be swept
     2 UseSweepPlan    ''                         -1     Flag to indicate use of SweepPlan
     3 SweepPlan       ''                         -1     SweepPlan instance path name for sweep values
     4 Start           1.0GHz                      0     Start frequency
     5 Stop            10.0GHz                     0     Stop frequency
     6 Step            1.0GHz                      0     Step frequency
     7 Center          ''                          0     Center frequency
     8 Span            ''                          0     Span
     9 Lin             ''                         -1     Linear sweep 
    10 Dec             ''                         -1     Number of points per decade
    11 Log             ''                         -1     Log sweep
    12 Reverse         ''                         -1     Reverse sweep
    13 Pt              ''                          0     Frequency value if its not being swept
    14 Sort            'LINEAR START STEP'        -1     Sort frequencies
    15 CalcNoise       ''                         -1     Calculate noise parameters
    16 NoiseNode       ''                         -1     Nodename to compute noise voltage (repeatable)
    17 SortNoise       NoiseSortOff               -1     Sort Noise Contribution by: Value/1, Name/2  (default: 0/NoOutput)
    18 IncludePortNoise no                         -1     Use finite differences for sensitivities
    19 NoiseThresh     0                          -1     Noise Contribution Threshold
    20 BandwidthForNoise 1Hz                         0     Bandwidth for noise analysis
    21 FreqConversion  No                         -1     Enable AC frequency conversion
    22 UseFiniteDiff   no                         -1     Use finite differences for sensitivities
    23 NestLevel       2                          -1     Levels of subcircuits to output
    24 StatusLevel     2                          -1     Degree of annotation
    25 OutputBudgetIV  no                         -1     Output top-level pin currents and voltages
    26 Freq            ''                          0     Frequency when not swept
    27 Other           ''                         -1     Output string to netlist
END_ELEMENT

AIRIND1   AIRIND1    6
     1 N               10.0                       -1     Number of turns
     2 D               210.0mils                   5     Diameter of form
     3 L               400.0mils                   5     Length of form
     4 WD              32.0mils                    5     Wire diameter
     5 Rho             1.0                        -1     Metal Resistivity (Relative to copper)
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

AIRIND2   AIRIND2    6
     1 N               10.0                       -1     Number of turns
     2 D               210.0mils                   5     Diameter of form
     3 L               400.0mils                   5     Length of form
     4 AWG             20                         -1     Wire gauge
     5 Rho             1.0                        -1     Metal Resistivity (Relative to copper)
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

AM_DemodTuned AM_DemodTuned  2
     1 Fnom            1GHz                        0     Nominal Input Frequency
     2 Rout            50ohm                       1     Output Resistance
END_ELEMENT

AM_ModTuned AM_ModTuned  3
     1 ModIndex        1.0                        -1     Modulation Index
     2 Fnom            1GHz                        0     Nominal Input Frequency
     3 Rout            50ohm                       1     Output Resistance
END_ELEMENT

Advanced_Curtice2_Model Advanced_Curtice2_Model 59
     1 NFET            y_n1                       -1     Model Type - YES or NO
     2 PFET            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          1                          -1     1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
     4 Vto             ''                          9     Threshold voltage, V
     5 Beta            ''                         -1     Transconductance parameter, A/V^2
     6 Lambda          ''                         -1     Channel length modulation parameter, 1/V
     7 Alpha           ''                         -1     Hyperbolic tangent function parameter, 1/V
     8 Tau             ''                          6     Transit time under gate, S
     9 Taumdl          y_n0                       -1     Use 2nd order Bessel polynomial to model tau effect in transient
    10 Tnom            ''                         12     Nominal ambient temperature, Celsius
    11 Idstc           ''                         -1     Ids temperature coefficient
    12 Ucrit           ''                         -1     Parameter for critical field for mobility degradation
    13 Vgexp           ''                         -1     Exponential parameter
    14 Gamds           ''                         -1     describes effective pinch-off combined with Vds
    15 Vtotc           ''                         -1     VTO Temperature Coefficient, V/Degree C
    16 Betatce         ''                         -1     BETA Exponential Temperature Coefficient, %/Degree C
    17 Rgs             ''                          1     G-S resistance, Ohm
    18 Rf              ''                          1     G-S effective forward-bias resistance (0. means infinity), Ohm
    19 Gscap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    20 Cgs             ''                          4     Zero-bias G-S junction cap., F
    21 Cgd             ''                          4     Zero-bias G-D junction cap., F
    22 Gdcap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    23 Fc              ''                         -1     Coefficient for forward-bias depletion cap.
    24 Rgd             ''                          1     Gate Drain resistance, Ohm
    25 Rd              ''                          1     Drain ohmic resistance, Ohm
    26 Rg              ''                          1     Gate resistance, Ohm
    27 Rs              ''                          1     Source ohmic resistance, Ohm
    28 Ld              ''                          3     Drain inductance, H
    29 Lg              ''                          3     Gate inductance, H
    30 Ls              ''                          3     Source inductance, H
    31 Cds             ''                          4     Drain-source cap., F
    32 Rc              ''                          1     Used with CRF to model freq. dependent output conductance (0. means infinity), Ohm
    33 Crf             ''                          4     Used with RC to model freq. dependent output conductance, F
    34 Gsfwd           ''                         -1     0=none 1=linear 2=diode
    35 Gsrev           ''                         -1     0=none 1=linear 2=diode
    36 Gdfwd           ''                         -1     0=none 1=linear 2=diode
    37 Gdrev           ''                         -1     0=none 1=linear 2=diode
    38 R1              ''                          1     Approximate breakdown resistance (0. Means Infinity), Ohm
    39 R2              ''                          1     Resistance relating breakdown voltage to channel, Ohm
    40 Vbi             ''                          9     Built-in gate potential, V
    41 Vbr             ''                          9     Gate junction reverse bias breakdown voltage (0. Means Infinity), V
    42 Vjr             ''                          9     Breakdown junction potential, V
    43 Is              ''                         10     Gate junction saturation current, A
    44 Ir              ''                         10     Gate rev saturation current, A
    45 Imax            ''                         10     Explosion current, A
    46 Xti             ''                         -1     Saturation Current Temperature Exponent
    47 Eg              ''                         -1     Energy Gap for Temperature Effect on IS
    48 N               ''                         -1     Gate junction emission coefficient
    49 Fnc             ''                          0     Flicker noise corner frequency
    50 R               ''                         -1     Gate noise coefficient
    51 P               ''                         -1     Drain noise coefficient
    52 C               ''                         -1     Gate-drain noise correlation coefficient.
    53 Taumdl          y_n0                       -1     Use 2nd order Bessel polynomial to model tau effect in transient
    54 wVgfwd          ''                          9     Gate junction forward bias (warning), V
    55 wBvgs           ''                          9     Gate-source reverse breakdown voltage (warning), V
    56 wBvgd           ''                          9     Gate-drain reverse breakdown voltage (warning), V
    57 wBvds           ''                          9     Drain-source breakdown voltage (warning), V
    58 wIdsmax         ''                         10     Maximum drain-source current (warning), A
    59 wPmax           ''                          8     Maximum power dissipation (warning), W
END_ELEMENT

Amplifier Amplifier 22
     1 S21             dbpolar(0,0)               -1     Forward Transmission Coefficient, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
     2 S11             polar(0,0)                 -1     Forward Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
     3 S22             0+j*0                      -1     Reverse Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
     4 S12             0.                         -1     Reverse Transmission Coefficient, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
     5 NF              ''                         13     Noise Figure in dB
     6 NFmin           ''                         13     Minimum Noise Figure at Sopt in dB
     7 Sopt            ''                         -1     Optimum Source Reflection for Minimum Noise Figure, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
     8 Rn              ''                          1     Equivalent Noise Resistance
     9 Z1              ''                          1     Reference Impedance for Port1
    10 Z2              ''                          1     Reference Impedance for Port2
    11 GainCompType    LIST                       -1     Gain Compression Type, parameters from following LIST or in FILE
    12 GainCompFreq    ''                          0     Frequency at which Gain Compression is specified
    13 ReferToInput    OUTPUT                     -1     Power Levels refer to INPUT or OUTPUT
    14 SOI             ''                         -1     Second Order Intercept in dBm
    15 TOI             ''                         -1     Third Order Intercept in dBm
    16 Psat            ''                         -1     Power Saturation Point in dBm
    17 GainCompSat     ''                         13     Gain Compression at PSat in dB
    18 GainCompPower   ''                         -1     Power Level in dBm at Gain Compression Specified by GainComp
    19 GainComp        1.dB                       13     Gain Compression in dB at GainCompPower
    20 AM2PM           ''                         -1     Amplitude Modulation to Phase Modulation in degrees/dB
    21 PAM2PM          ''                         -1     Power Level at AM2PM in dBm
    22 GainCompFile    ''                         -2     Filename for Gain Compression Data
END_ELEMENT

AmplifierP2D AmplifierP2D  1
     1 P2DFile         ''                         -2     Filename for P2D Data
END_ELEMENT

AmplifierS2D AmplifierS2D  4
     1 S2DFile         ''                         -2     Filename for S2D Data
     2 GCFreq          ''                          0     Reference Frequency for Gain Compression
     3 VarName         ''                         -2     Variable That Parameterizes S2D Data
     4 VarValue        ''                         -1     Select S2D Data at VarName=VarValue
END_ELEMENT

AmplifierVC AmplifierVC  2
     1 Gain            (30-15*_v3)                -2     Gain as a function of control voltage (_v3), in dB/V
     2 Rout            50ohm                       1     Output Resistance
END_ELEMENT

AntLoad   AntLoad    3
     1 AntType         MONOPOLE                   -1     MONOPOLE or DIPOLE
     2 Length          1m                          5     Physical Antenna Length
     3 RatioLR         10                         -1     Length to Radius Ratio
END_ELEMENT

Attenuator Attenuator  4
     1 Loss            0.dB                       13     attenuation in dB
     2 VSWR            1.                         -1     voltage standing wave ratio for both ports
     3 Rref            50.ohm                      1     reference resistance for both ports
     4 Temp            ''                         12     temperature in degrees Celsius
END_ELEMENT

BALUN1    BALUN1    12
     1 Z               50.0ohm                     1     Characteristic impedance of transmission line
     2 Len             12.0mils                    5     Physical length of transmission line
     3 K               2.0                        -1     Effective dielectric constant
     4 A               0.0                        -1     Attenuation of transmission line, dB per unit length
     5 F               1.0GHz                      0     Frequency for scaling attenuation
     6 N               5.0                        -1     Number of turns
     7 AL              960.0nH                     3     Inductance index
     8 TanD            0                          -1     Dielectric loss tangent
     9 Mur             1                          -1     Relative permeability
    10 TanM            0                          -1     Permeability
    11 Sigma           0                          -1     Dielectric conductivity
    12 Temp            ''                         12     Physical temperature
END_ELEMENT

BALUN2    BALUN2    12
     1 Z               50.0ohm                     1     Characteristic impedance of transmission line
     2 Len             12.0mils                    5     Physical length of transmission line
     3 K               2.0                        -1     Effective dielectric constant
     4 A               0.0                        -1     Attenuation of transmission line, dB per unit length
     5 F               1.0GHz                      0     Frequency for scaling attenuation
     6 Mu              10.0                       -1     Relative permeability of surrounding sleeve
     7 L               20.0nH                      3     Inductance (per unit length) of the line without the sleeve
     8 TanD            0                          -1     Dielectric loss tangent
     9 Mur             1                          -1     Relative permeability
    10 TanM            0                          -1     Permeability
    11 Sigma           0                          -1     Dielectric conductivity
    12 Temp            ''                         12     Physical temperature
END_ELEMENT

BFINL     BFINL      4
     1 Subst           FSub1                      -1     Substrate instance name
     2 D               20.0mils                    5     Width of gap
     3 L               1000.0mils                  5     Length of finline
     4 Temp            ''                         12     Physical temperature
END_ELEMENT

BFINLT    BFINLT     3
     1 Subst           FSub1                      -1     Substrate instance name
     2 D               20.0mils                    5     Width of gap
     3 Temp            ''                         12     Physical temperature
END_ELEMENT

BIP       BIP       10
     1 A               0.99                       -1     Magnitude of current gain ALPHA at DC
     2 T               1.0nsec                     6     Time delay associated with current gain
     3 F               0.1GHz                      0     -3dB frequency for current gain
     4 Cc              10.0pF                      4     Collector capacitance
     5 Gc              1.0uS                       2     Collector conductance
     6 Rb              2.0ohm                      1     Base resistance
     7 Lb              1.0nH                       3     Base inductance
     8 Ce              10.0pF                      4     Emitter capacitance
     9 Re              2.0ohm                      1     Emitter resistance
    10 Le              1.0nH                       3     Emitter inductance
END_ELEMENT

BIPB      BIPB      11
     1 B               20.0                       -1     Magnitude of current gain BETA at DC
     2 A               0.0deg                      7     Phase offset of current gain
     3 T               1.0nsec                     6     Time delay associated with current gain
     4 Cc              10.0pF                      4     Collector capacitance
     5 Gc              1.0uS                       2     Collector conductance
     6 Rb              2.0ohm                      1     Base resistance
     7 Lb              1.0nH                       3     Base inductance
     8 Ce              10.0pF                      4     Emitter capacitance
     9 Re              2.0ohm                      1     Emitter resistance
    10 Le              1.0nH                       3     Emitter inductance
    11 Rel             0.2ohm                      1     Emitter lead resistance
END_ELEMENT

BJT4_NPN  BJT4_NPN   5
     1 Model           BJTM1                      -1     Model instance name
     2 Area            ''                         -1     Scaling Factor
     3 Region          ''                         -1     DC operating region, 0=off, 1=on, 2=rev, 3=sat
     4 Temp            ''                         12     Device operating temperature
     5 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

BJT4_PNP  BJT4_PNP   5
     1 Model           BJTM1                      -1     Model instance name
     2 Area            ''                         -1     Scaling Factor
     3 Region          ''                         -1     DC operating region, 0=off, 1=on, 2=rev, 3=sat
     4 Temp            ''                         12     Device operating temperature
     5 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

BJT_Model BJT_Model 61
     1 NPN             y_n1                       -1     Model Type - YES or NO
     2 PNP             y_n0                       -1     Model Type - YES or NO
     3 Bf              ''                         -1     Ideal Max. Forward Beta
     4 Ikf             ''                         10     Corner for Forward Beta High Current Roll-off (0. Means Infinity), A
     5 Ise             ''                         10     B-E Leakage Saturation Current, A
     6 Ne              ''                         -1     B-E Leakage Emission Coefficient
     7 Vaf             ''                          9     Forward Early Voltage (0. Means Infinity), V
     8 Nf              ''                         -1     Forward Current Emission Coefficient
     9 Tf              ''                          6     Ideal Forward Transit Time, S
    10 Xtf             ''                         -1     Coefficient of Bias Dependence for TF
    11 Vtf             ''                          9     Voltage Dependence of TF on B-C Voltage (0. Means Infinity), V
    12 Itf             ''                         10     Parameter for High Current Effect on TF, A
    13 Ptf             ''                         -1     Excess Phase at Freq. = 1/(TF*2PI) (Not Used), Degrees
    14 Xtb             ''                         -1     Temperature Exponent for Forward and Reverse Beta
    15 Approxqb        y_n1                       -1     Use the approximation for Qb vs early voltage
    16 Br              ''                         -1     Ideal Max. Reverse Beta
    17 Ikr             ''                         10     Corner for Reverse Beta High Current Roll-off (0. Means Infinity), A
    18 Isc             ''                         10     B-C Leakage Saturation Current, A
    19 Nc              ''                         -1     B-C Leakage Emission Coefficient
    20 Var             ''                          9     Reverse Early Voltage (0. Means Infinity), V
    21 Nr              ''                         -1     Reverse Current Emission Coefficient
    22 Tr              ''                          6     Ideal Reverse Transit Time, S
    23 Eg              ''                         -1     Energy Gap for Temperature Effect on IS, eV
    24 Is              ''                         10     Transport Saturation Current, A
    25 Imax            ''                         10     Explosion current, A
    26 Xti             ''                         -1     Temperature Exponent for Saturation Current
    27 Tnom            ''                         12     Nominal ambient temperature, Celsius
    28 Nk              ''                         -1     High-Current Roll-off Coefficient
    29 Iss             ''                         10     Substrate P-N Saturation Current, A
    30 Ns              ''                         -1     Substrate P-N Emission Coefficient
    31 Cjc             ''                          4     B-C Zero-bias Depletion Cap., F
    32 Vjc             ''                          9     B-C Junction Built-in Potential, V
    33 Mjc             ''                         -1     B-C Junction Exponential Factor
    34 Xcjc            ''                          4     Fraction of CJC That Goes to Internal Base Node
    35 Fc              ''                         -1     Forward-bias Depletion Cap. Coefficient
    36 Cje             ''                          4     B-E Zero-bias Depletion Cap., F
    37 Vje             ''                          9     B-E Junction Built-in Potential, V
    38 Mje             ''                         -1     B-E Junction Exponential Factor
    39 Cjs             ''                          4     Zero-bias Collector Substrate (Ground) Cap., F
    40 Vjs             ''                          9     Substrate Junction Built-in Potential, V
    41 Mjs             ''                         -1     Substrate Junction Exponential Factor
    42 Rb              ''                          1     Zero-bias Base Resistance, Ohm
    43 Irb             ''                         10     Current When Base Resistance Falls Halfway to Its Min. Value (0. Means Infinity), A
    44 Rbm             ''                          1     Min. Base Resistance At High Currents (0. Means RB), Ohm
    45 Re              ''                          1     Emitter Resistance, Ohm
    46 Rc              ''                          1     Collector Resistance, Ohm
    47 Kf              ''                         -1     Flicker Noise Coefficient
    48 Af              ''                         -1     Flicker Noise Exponent
    49 Kb              ''                         -1     Burst Noise Coefficient
    50 Ab              ''                         -1     Burst Noise Exponent
    51 Fb              ''                          0     Burst Noise Corner Frequency
    52 Ffe             ''                         -1     Flicker noise frequency exponent
    53 wVsubfwd        ''                          9     Substrate Junction Forward Bias (warning), V
    54 wBvsub          ''                          9     Substrate Junction Reverse Breakdown Voltage (warning), V
    55 wBvbe           ''                          9     Base-Emitter Reverse Breakdown Voltage (warning), V
    56 wBvbc           ''                          9     Base-Collector Reverse Breakdown Voltage (warning), V
    57 wVbcfwd         ''                          9     Base-Collector Forward Bias (warning), V
    58 wIbmax          ''                         10     Maximum Base Current (warning), A
    59 wIcmax          ''                         10     Maximum Collector Current (warning), A
    60 wPmax           ''                          8     Maximum Power Dissipation (warning), W
    61 Lateral         y_n0                       -1     Lateral substrate geometry type
END_ELEMENT

BJTM1   BJTM1    1
     1 Area            ''                         -1     Scaling Factor
END_ELEMENT

BJT_NPN   BJT_NPN    5
     1 Model           BJTM1                      -1     Model instance name
     2 Area            ''                         -1     Scaling Factor
     3 Region          ''                         -1     DC operating region, 0=off, 1=on, 2=rev, 3=sat
     4 Temp            ''                         12     Device operating temperature
     5 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

BJT_PNP   BJT_PNP    5
     1 Model           BJTM1                      -1     Model instance name
     2 Area            ''                         -1     Scaling Factor
     3 Region          ''                         -1     DC operating region, 0=off, 1=on, 2=rev, 3=sat
     4 Temp            ''                         12     Device operating temperature
     5 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

BPF_Bessel BPF_Bessel 12
     1 Fcenter         1.5GHz                      0     Passband Center Frequency
     2 BWpass          1.0GHz                      0     Passband Edge-to-Edge Width
     3 Apass           3dB                        13     Attenuation at Stopband Edges, in dB
     4 GDpass          0.9                        -1     Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
     5 StopType        OPEN                       -2     Input is open or short for stopband
     6 MaxRej          ''                         13     Maximum Rejection Level , in dB
     7 N               0                          -1     Filter Order (if N > 0, it overwrites GDpass)
     8 IL              0dB                        13     Passband Insertion Loss, in dB
     9 Qu              1E308                      -1     Unloaded Quality Factor
    10 Z1              50ohm                       1     Input Port Reference Impedance
    11 Z2              50ohm                       1     Output Port Reference Impedance
    12 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

BPF_Butterworth BPF_Butterworth 13
     1 Fcenter         1.5GHz                      0     Passband Center Frequency
     2 BWpass          1.0GHz                      0     Passband Edge-to-Edge Width
     3 Apass           3dB                        13     Attenuation at Passband Edges, in dB
     4 BWstop          1.2GHz                      0     Stopband Edge-to-Edge Width
     5 Astop           20dB                       13     Attenuation at Stopband Edges, in dB
     6 StopType        OPEN                       -2     Input is open or short for stopband
     7 MaxRej          ''                         13     Maximum Rejection Level , in dB
     8 N               0                          -1     Filter Order (if N > 0, it overwrites BWstop and Astop)
     9 IL              0dB                        13     Passband Insertion Loss, in dB
    10 Qu              1E308                      -1     Unloaded Quality Factor
    11 Z1              50ohm                       1     Input Port Reference Impedance
    12 Z2              50ohm                       1     Output Port Reference Impedance
    13 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

BPF_Chebyshev BPF_Chebyshev 14
     1 Fcenter         1.5GHz                      0     Passband Center Frequency
     2 BWpass          1.0GHz                      0     Passband Edge-to-Edge Width
     3 Apass           1dB                        13     Attenuation at Passband Edges, in dB
     4 Ripple          1dB                        13     Passband Ripple, in dB
     5 BWstop          1.2GHz                      0     Stopband Edge-to-Edge Width
     6 Astop           20dB                       13     Attenuation at Stopband Edges, in dB
     7 StopType        OPEN                       -2     Input is open or short for stopband
     8 MaxRej          ''                         13     Maximum Rejection Level , in dB
     9 N               0                          -1     Filter Order (if N > 0, it overwrites BWstop and Astop)
    10 IL              0dB                        13     Passband Insertion Loss, in dB
    11 Qu              1E308                      -1     Unloaded Quality Factor
    12 Z1              50ohm                       1     Input Port Reference Impedance
    13 Z2              50ohm                       1     Output Port Reference Impedance
    14 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

BPF_Elliptic BPF_Elliptic 13
     1 Fcenter         1.5GHz                      0     Passband Center Frequency
     2 BWpass          1.0GHz                      0     Passband Edge-to-Edge Width
     3 Ripple          1dB                        13     Passband Ripple, in dB
     4 BWstop          1.2GHz                      0     Stopband Edge-to-Edge Width
     5 Astop           20dB                       13     Attenuation at Stopband Edges, in dB
     6 StopType        OPEN                       -2     Input is open or short for stopband
     7 MaxRej          ''                         13     Maximum Rejection Level , in dB
     8 N               0                          -1     Filter Order (if N > 0, it overwrites BWstop and Astop)
     9 IL              0dB                        13     Passband Insertion Loss, in dB
    10 Qu              1E308                      -1     Unloaded Quality Factor
    11 Z1              50ohm                       1     Input Port Reference Impedance
    12 Z2              50ohm                       1     Output Port Reference Impedance
    13 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

BPF_Gaussian BPF_Gaussian 12
     1 Fcenter         1.5GHz                      0     Passband Center Frequency
     2 BWpass          1.0GHz                      0     Passband Edge-to-Edge Width
     3 Apass           3dB                        13     Attenuation at Stopband Edges, in dB
     4 GDpass          0.9                        -1     Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
     5 StopType        OPEN                       -2     Input is open or short for stopband
     6 MaxRej          ''                         13     Maximum Rejection Level , in dB
     7 N               0                          -1     Filter Order (if N > 0, it overwrites GDpass)
     8 IL              0dB                        13     Passband Insertion Loss, in dB
     9 Qu              1E308                      -1     Unloaded Quality Factor
    10 Z1              50ohm                       1     Input Port Reference Impedance
    11 Z2              50ohm                       1     Output Port Reference Impedance
    12 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

BPF_PoleZero BPF_PoleZero  8
     1 Poles           'list(-0.7+j*0.7, -0.7-j*0.7)' -1     List of Complex Poles
     2 Zeros           ''                         -1     List of Complex Zeros
     3 Gain            1.0                        -1     Gain Factor
     4 Fcenter         1GHz                        0     Passband Edge Frequency
     5 BWpass          1.0GHz                      0     Passband Edge-to-Edge Width
     6 StopType        OPEN                       -2     Input is open or short for stopband
     7 Z1              50ohm                       1     Input Port Reference Impedance
     8 Z2              50ohm                       1     Output Port Reference Impedance
END_ELEMENT

BPF_Polynomial BPF_Polynomial  8
     1 Numerator       1                          -1     List of Numerator Coefficients
     2 Denominator     list(1,1.4,1)              -1     List of Denominator Coefficients
     3 Gain            1.0                        -1     Gain Factor
     4 Fcenter         1GHz                        0     Passband Edge Frequency
     5 BWpass          1.0GHz                      0     Passband Edge-to-Edge Width
     6 StopType        OPEN                       -2     Input is open or short for stopband
     7 Z1              50ohm                       1     Input Port Reference Impedance
     8 Z2              50ohm                       1     Output Port Reference Impedance
END_ELEMENT

BPF_RaisedCos BPF_RaisedCos 10
     1 Alpha           0.35                       -1     Rolloff factor defining filters excess bandwidth, 0 <= Alpha <= 1
     2 Fcenter         1.5GHz                      0     Passband Center Frequency
     3 SymbolRate      24.3KHz                     0     Digital symbol rate defining filters bandwidth
     4 DelaySymbols    5                          -1     Number of symbols delayed by the filter
     5 Exponent        0.5                        -1     Exponent Factor ( 0<= Exponent <= 1 )
     6 DutyCycle       100                        -1     Pulse duty cycle in percent, used for sinc(x) correction
     7 SincE           y_n0                       -2     Yes for applying Exponent Factor on sinc(x) correction
     8 Gain            1.0                        -1     Gain Factor
     9 Zout            50ohm                       1     Output Impedance
    10 WindowType      0                          -1     Window Type, 0=None, 1=Hann, 2=Hamming
END_ELEMENT

BSF_Bessel BSF_Bessel 12
     1 Fcenter         1.5GHz                      0     Stopband Center Frequency
     2 BWpass          1.0GHz                      0     Passband Edge-to-Edge Width
     3 Apass           3dB                        13     Attenuation at Passband Edges, in dB
     4 GDpass          0.9                        -1     Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
     5 StopType        OPEN                       -2     Input is open or short for stopband
     6 MaxRej          ''                         13     Maximum Rejection Level , in dB
     7 N               0                          -1     Filter Order (if N > 0, it overwrites GDpass)
     8 IL              0dB                        13     Passband Insertion Loss, in dB
     9 Qu              1E308                      -1     Unloaded Quality Factor
    10 Z1              50ohm                       1     Input Port Reference Impedance
    11 Z2              50ohm                       1     Output Port Reference Impedance
    12 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

BSF_Butterworth BSF_Butterworth 13
     1 Fcenter         1.5GHz                      0     Stopband Center Frequency
     2 BWstop          1.0GHz                      0     Stopband Edge-to-Edge Width
     3 Astop           20dB                       13     Attenuation at Stopband Edges, in dB
     4 BWpass          1.2GHz                      0     Passband Edge-to-Edge Width
     5 Apass           3dB                        13     Attenuation at Passband Edges, in dB
     6 StopType        OPEN                       -2     Input is open or short for stopband
     7 MaxRej          ''                         13     Maximum Rejection Level , in dB
     8 N               0                          -1     Filter Order (if N > 0, it overwrites BWstop and Astop)
     9 IL              0dB                        13     Passband Insertion Loss, in dB
    10 Qu              1E308                      -1     Unloaded Quality Factor
    11 Z1              50ohm                       1     Input Port Reference Impedance
    12 Z2              50ohm                       1     Output Port Reference Impedance
    13 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

BSF_Chebyshev BSF_Chebyshev 14
     1 Fcenter         1.5GHz                      0     Stopband Center Frequency
     2 BWstop          1.0GHz                      0     Stopband Edge-to-Edge Width
     3 Astop           20dB                       13     Attenuation at Stopband Edges, in dB
     4 Ripple          1dB                        13     Stopband Ripple, in dB
     5 BWpass          1.2GHz                      0     Passband Edge-to-Edge Width
     6 Apass           1dB                        13     Attenuation at Passband Edges, in dB
     7 StopType        OPEN                       -2     Input is open or short for stopband
     8 MaxRej          ''                         13     Maximum Rejection Level , in dB
     9 N               0                          -1     Filter Order (if N > 0, it overwrites BWstop and Astop)
    10 IL              0dB                        13     Passband Insertion Loss, in dB
    11 Qu              1E308                      -1     Unloaded Quality Factor
    12 Z1              50ohm                       1     Input Port Reference Impedance
    13 Z2              50ohm                       1     Output Port Reference Impedance
    14 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

BSF_Elliptic BSF_Elliptic 14
     1 Fcenter         1.5GHz                      0     Stopband Center Frequency
     2 BWstop          1.0GHz                      0     Stopband Edge-to-Edge Width
     3 Astop           20dB                       13     Attenuation at Stopband Edges, in dB
     4 Ripple          1dB                        13     Stopband Ripple, in dB
     5 BWpass          1.2GHz                      0     Passband Edge-to-Edge Width
     6 Apass           1dB                        13     Attenuation at Passband Edges, in dB
     7 StopType        OPEN                       -2     Input is open or short for stopband
     8 MaxRej          ''                         13     Maximum Rejection Level , in dB
     9 N               0                          -1     Filter Order (if N > 0, it overwrites BWstop and Astop)
    10 IL              0dB                        13     Passband Insertion Loss, in dB
    11 Qu              1E308                      -1     Unloaded Quality Factor
    12 Z1              50ohm                       1     Input Port Reference Impedance
    13 Z2              50ohm                       1     Output Port Reference Impedance
    14 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

BSF_Gaussian BSF_Gaussian 12
     1 Fcenter         1.5GHz                      0     Stopband Center Frequency
     2 BWpass          1.0GHz                      0     Passband Edge-to-Edge Width
     3 Apass           3dB                        13     Passband Edge-to-Edge Width
     4 GDpass          0.9                        -1     Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
     5 StopType        OPEN                       -2     Input is open or short for stopband
     6 MaxRej          ''                         13     Maximum Rejection Level , in dB
     7 N               0                          -1     Filter Order (if N > 0, it overwrites GDpass)
     8 IL              0dB                        13     Passband Insertion Loss, in dB
     9 Qu              1E308                      -1     Unloaded Quality Factor
    10 Z1              50ohm                       1     Input Port Reference Impedance
    11 Z2              50ohm                       1     Output Port Reference Impedance
    12 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

BSF_PoleZero BSF_PoleZero  8
     1 Poles           'list(-0.7+j*0.7, -0.7-j*0.7)' -1     List of Complex Poles
     2 Zeros           ''                         -1     List of Complex Zeros
     3 Gain            1.0                        -1     Gain Factor
     4 Fcenter         1GHz                        0     Passband Edge Frequency
     5 BWpass          1.0GHz                      0     Passband Edge-to-Edge Width
     6 StopType        OPEN                       -2     Input is open or short for stopband
     7 Z1              50ohm                       1     Input Port Reference Impedance
     8 Z2              50ohm                       1     Output Port Reference Impedance
END_ELEMENT

BSF_Polynomial BSF_Polynomial  8
     1 Numerator       1                          -1     List of Numerator Coefficients
     2 Denominator     list(1,1.4,1)              -1     List of Denominator Coefficients
     3 Gain            1.0                        -1     Gain Factor
     4 Fcenter         1GHz                        0     Passband Edge Frequency
     5 BWpass          1.0GHz                      0     Passband Edge-to-Edge Width
     6 StopType        OPEN                       -2     Input is open or short for stopband
     7 Z1              50ohm                       1     Input Port Reference Impedance
     8 Z2              50ohm                       1     Output Port Reference Impedance
END_ELEMENT

BSF_RaisedCos BSF_RaisedCos 10
     1 Alpha           0.35                       -1     Rolloff factor defining filters excess bandwidth, 0 <= Alpha <= 1
     2 Fcenter         1.5GHz                      0     Passband Center Frequency
     3 SymbolRate      24.3KHz                     0     Digital symbol rate defining filters bandwidth
     4 DelaySymbols    5                          -1     Number of symbols delayed by the filter
     5 Exponent        0.5                        -1     Exponent Factor ( 0<= Exponent <= 1 )
     6 DutyCycle       100                        -1     Pulse duty cycle in percent, used for sinc(x) correction
     7 SincE           y_n0                       -2     Yes for applying Exponent Factor on sinc(x) correction
     8 Gain            1.0                        -1     Gain Factor
     9 Zout            50ohm                       1     Output Impedance
    10 WindowType      0                          -1     Window Type, 0=None, 1=Hann, 2=Hamming
END_ELEMENT

BSIM1_Model BSIM1_Model 90
     1 NMOS            y_n1                       -1     Model Type - YES or NO
     2 PMOS            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          4                          -1     1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
     4 Rsh             ''                         -1     Drain and Source Diffusion Sheet Resistance, Ohm/Sq
     5 Js              ''                         10     Gate Saturation Current, A
     6 Temp            ''                         12     Parameter Measurement temperature, Celsius
     7 Muz             ''                         -1     Surface Mobility at VDS=0 VGS=VTH, cm^2/(V*s)
     8 Dl              ''                          5     Shortening of Channel, m
     9 Dw              ''                          5     Narrowing of Channel, m
    10 Vdd             ''                          9     Measurement Drain Bias Range, V
    11 Vfb             ''                          9     Flat-Band Voltage, V
    12 Lvfb            ''                         -1     Length Dependence of Vfb, um*V
    13 Wvfb            ''                         -1     Width Dependence of Vfb, um*V
    14 Phi             ''                          9     Surface Potential, V
    15 Lphi            ''                         -1     Length Dependence of Phi, um*V
    16 Wphi            ''                         -1     Width Dependence of Phi, um*V
    17 K1              ''                         -1     Body Effect Coefficient, V^(1/2)
    18 Lk1             ''                         -1     Length Dependence of K1, um*V^(1/2)
    19 Wk1             ''                         -1     Width Dependence of K1, um*V^(1/2)
    20 K2              ''                         -1     Drain-Source Depletion Charge Sharing Coeff.
    21 Lk2             ''                         -1     Length Dependence of K2, um
    22 Wk2             ''                         -1     Width Dependence of K2, um
    23 Eta             ''                         -1     Zero-Bias Drain-Induced Barrier Lowering Coeff.
    24 Leta            ''                         -1     Length Dependence of Eta, um
    25 Weta            ''                         -1     Width Dependence of Eta, um
    26 U0              ''                         -1     Transverse Field Mobility Degradation Coeff., 1/V
    27 Lu0             ''                         -1     Length Dependence of U0, um/V
    28 Wu0             ''                         -1     Width Dependence of U0, um/V
    29 U1              ''                         -1     Zero-Bias Velocity Saturation Coeff., um/V
    30 Lu1             ''                         -1     Length Dependence of U1, um^2/V
    31 Wu1             ''                         -1     Width Dependence of U1, um^2/V
    32 X2mz            ''                         -1     Sens. of Mobility to Substrate Bias, cm^2/(V^2*s)
    33 Lx2mz           ''                         -1     Length Dependence of X2mz, um*cm^2/(V^2*s)
    34 Wx2mz           ''                         -1     Width Dependence of X2mz, um*cm^2/(V^2*s)
    35 X2e             ''                         -1     Sens. of Eta to Substrate Bias, 1/V
    36 Lx2e            ''                         -1     Length Dependence of X2e, um/V
    37 Wx2e            ''                         -1     Width Dependence of X2e, um/V
    38 X3e             ''                         -1     Sens. of Eta to Drain Bias, 1/V
    39 Lx3e            ''                         -1     Length Dependence of X3e, um/V
    40 Wx3e            ''                         -1     Width Dependence of X3e, um/V
    41 X2u0            ''                         -1     Sens. of U0 to Substrate Bias, 1/V^2
    42 Lx2u0           ''                         -1     Length Dependence of X2u0, um/V^2
    43 Wx2u0           ''                         -1     Width Dependence of X2u0, um/V^2
    44 X2u1            ''                         -1     Sens. of U1 to Substrate Bias, um/V^2
    45 Lx2u1           ''                         -1     Length Dependence of X2u1, um^2/V^2
    46 Wx2u1           ''                         -1     Width Dependence of X2u1, um^2/V^2
    47 X3u1            ''                         -1     Sens. of U1 to Drain Bias, um/V^2
    48 Lx3u1           ''                         -1     Length Dependence of X3u1, um^2/V^2
    49 Wx3u1           ''                         -1     Width Dependence of X3u1, um^2/V^2
    50 Mus             ''                         -1     Mobility at VDS=VDD VGS=VTH, cm^2/(V*s)
    51 Lmus            ''                         -1     Length Dependence of Mus, um*cm^2/(V*s)
    52 Wmus            ''                         -1     Width Dependence of Mus, um*cm^2/(V*s)
    53 X2ms            ''                         -1     Sens. of Mus to Substrate Bias, cm^2/(V^2*s)
    54 Lx2ms           ''                         -1     Length Dependence of X2ms, um*cm^2/(V^2*s)
    55 Wx2ms           ''                         -1     Width Dependence of X2ms, um*cm^2/(V^2*s)
    56 X3ms            ''                         -1     Sens. of Mus to Drain Bias, cm^2/(V^2*s)
    57 Lx3ms           ''                         -1     Length Dependence of X3ms, um*cm^2/(V^2*s)
    58 Wx3ms           ''                         -1     Width Dependence of X3ms, um*cm^2/(V^2*s)
    59 N0              ''                         -1     Zero-Bias Subthreshold Slope Coeff.
    60 Ln0             ''                         -1     Length Dependence of N0, um
    61 Wn0             ''                         -1     Width Dependence of N0, um
    62 Nb              ''                         -1     Sens. of N0 to Substrate Bias, 1/V
    63 Lnb             ''                         -1     Length Dependence of Nb, um/V
    64 Wnb             ''                         -1     Width Dependence of Nb, um/V
    65 Nd              ''                         -1     Sens. of N0 to Drain Bias, 1/V
    66 Lnd             ''                         -1     Length Dependence of Nd, um/V
    67 Wnd             ''                         -1     Width Dependence of Nd, um/V
    68 Tox             ''                         -1     Oxide Thickness, um
    69 Cj              ''                         -1     Zero-bias Bulk Junction Cap., F/m
    70 Mj              ''                         -1     Junction  grading coefficient
    71 Cjsw            ''                         -1     Zero-bias Bulk Junction Sidewall Cap., F/m
    72 Mjsw            ''                         -1     Junction Sidewall grading coefficient
    73 Pb              ''                          9     Bulk Junction Potential, V
    74 Pbsw            ''                          9     Bulk Side Junction Potential, V
    75 Cgso            ''                         -1     G-S Overlap Cap., F/m
    76 Cgdo            ''                         -1     G-D Overlap Cap., F/m
    77 Cgbo            ''                         -1     G-B Overlap Cap., F/m
    78 Xpart           ''                         -1     Coefficient of Channel Charge Share
    79 Kf              ''                         -1     Flicker Noise Coefficient
    80 Af              ''                         -1     Flicker Noise Exponent
    81 Ffe             ''                         -1     Flicker noise frequency exponent
    82 Rg              ''                          1     Gate Resistance, Ohm
    83 N               ''                         -1     Bulk P-N Emission Coefficient
    84 Imax            ''                         10     Explosion current, A
    85 wVsubfwd        ''                          9     Substrate Junction Forward Bias (warning), V
    86 wBvsub          ''                          9     Substrate Junction Reverse Breakdown Voltage (warning), V
    87 wBvg            ''                          9     Gate Oxide Breakdown Voltage (warning), V
    88 wBvds           ''                          9     Drain-Source Breakdown Voltage (warning), V
    89 wIdsmax         ''                         10     Maximum Drain-Source Current (warning), A
    90 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

BSIM2_Model BSIM2_Model 137
     1 NMOS            y_n1                       -1     Model Type - YES or NO
     2 PMOS            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          5                          -1     1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
     4 Rsh             ''                         -1     Drain and Source Diffusion Sheet Resistance, Ohm/Sq
     5 Js              ''                         -1     Gate Saturation Current, A/m^2
     6 Mu0             ''                         -1     Surface Mobility at VDS=0 VGS=VTH, cm^2/(V*s)
     7 Dl              ''                          5     Shortening of Channel, m
     8 Dw              ''                          5     Narrowing of Channel, m
     9 Vdd             ''                          9     Measurement Drain Bias Range, V
    10 Vgg             ''                          9     Measurement Gate Bias Range, V
    11 Vbb             ''                          9     Measurement Bulk Bias Range, V
    12 Temp            ''                         12     Parameter Measurement temperature, Celsius
    13 Tox             ''                         -1     Oxide Thickness, um
    14 Cj              ''                         -1     Zero-bias Bulk Junction Cap., F/m^2
    15 Mj              ''                         -1     Junction  grading coefficient
    16 Cjsw            ''                         -1     Zero-bias Bulk Junction Sidewall Cap., F/m
    17 Mjsw            ''                         -1     Junction Sidewall grading coefficient
    18 Pb              ''                          9     Bulk Junction Potential, V
    19 Pbsw            ''                          9     Bulk Side Junction Potential, V
    20 Cgso            ''                         -1     G-S Overlap Cap., F/m
    21 Cgdo            ''                         -1     G-D Overlap Cap., F/m
    22 Cgbo            ''                         -1     G-B Overlap Cap., F/m
    23 Xpart           ''                         -1     Coefficient of Channel Charge Share
    24 Vfb             ''                          9     Flat-Band Voltage, V
    25 Lvfb            ''                         -1     Length Dependence of Vfb, um*V
    26 Wvfb            ''                         -1     Width Dependence of Vfb, um*V
    27 Phi             ''                          9     Surface Potential, V
    28 Lphi            ''                         -1     Length Dependence of Phi, um*V
    29 Wphi            ''                         -1     Width Dependence of Phi, um*V
    30 K1              ''                         -1     Body Effect Coefficient, V^(1/2)
    31 Lk1             ''                         -1     Length Dependence of K1, um*V^(1/2)
    32 Wk1             ''                         -1     Width Dependence of K1, um*V^(1/2)
    33 K2              ''                         -1     Drain-Source Depletion Charge Sharing Coeff.
    34 Lk2             ''                         -1     Length Dependence of K2, um
    35 Wk2             ''                         -1     Width Dependence of K2, um
    36 Eta0            ''                         -1     Zero-Bias Drain-Induced Barrier Lowering Coeff.
    37 Leta0           ''                         -1     Length Dependence of Eta, um
    38 Weta0           ''                         -1     Width Dependence of Eta, um
    39 Ua0             ''                         -1     Transverse Field Mobility Degradation Coeff., 1/V
    40 Lua0            ''                         -1     Length Dependence of Ua0, um/V
    41 Wua0            ''                         -1     Width Dependence of Ua0, um/V
    42 U10             ''                         -1     Zero-Bias Velocity Saturation Coeff., um/V
    43 Lu10            ''                         -1     Length Dependence of U10, um^2/V
    44 Wu10            ''                         -1     Width Dependence of U10, um^2/V
    45 Mu0b            ''                         -1     Sens. of Mobility to Substrate Bias, cm^2/(V^2*s)
    46 Lmu0b           ''                         -1     Length Dependence of Mu0b, um*cm^2/(V^2*s)
    47 Wmu0b           ''                         -1     Width Dependence of Mu0b, um*cm^2/(V^2*s)
    48 Etab            ''                         -1     Sens. of Eta to Substrate Bias, 1/V
    49 Letab           ''                         -1     Length Dependence of Etab, um/V
    50 Wetab           ''                         -1     Width Dependence of Etab, um/V
    51 Uab             ''                         -1     Sens. of Ua0 to Substrate Bias, 1/V^2
    52 Luab            ''                         -1     Length Dependence of Uab, um/V^2
    53 Wuab            ''                         -1     Width Dependence of Uab, um/V^2
    54 U1b             ''                         -1     Sens. of U1 to Substrate Bias, um/V^2
    55 Lu1b            ''                         -1     Length Dependence of U1b, um^2/V^2
    56 Wu1b            ''                         -1     Width Dependence of U1b, um^2/V^2
    57 U1d             ''                         -1     Sens. of U1 to Drain Bias, um/V^2
    58 Lu1d            ''                         -1     Length Dependence of U1d, um^2/V^2
    59 Wu1d            ''                         -1     Width Dependence of U1d, um^2/V^2
    60 Mus0            ''                         -1     Mobility at VDS=VDD VGS=VTH, cm^2/(V*s)
    61 Lmus0           ''                         -1     Length Dependence of Mus0, um*cm^2/(V*s)
    62 Wmus0           ''                         -1     Width Dependence of Mus0, um*cm^2/(V*s)
    63 Musb            ''                         -1     Sens. of Mus to Substrate Bias, cm^2/(V^2*s)
    64 Lmusb           ''                         -1     Length Dependence of Musb, um*cm^2/(V^2*s)
    65 Wmusb           ''                         -1     Width Dependence of Musb, um*cm^2/(V^2*s)
    66 N0              ''                         -1     Zero-Bias Subthreshold Slope Coeff.
    67 Ln0             ''                         -1     Length Dependence of N0, um
    68 Wn0             ''                         -1     Width Dependence of N0, um
    69 Nb              ''                         -1     Sens. of N0 to Substrate Bias, 1/V
    70 Lnb             ''                         -1     Length Dependence of Nb, um/V
    71 Wnb             ''                         -1     Width Dependence of Nb, um/V
    72 Nd              ''                         -1     Sens. of N0 to Drain Bias, 1/V
    73 Lnd             ''                         -1     Length Dependence of Nd, um/V
    74 Wnd             ''                         -1     Width Dependence of Nd, um/V
    75 Mu20            ''                         -1     Empirical Parameter in Beta0 Expression
    76 Lmu20           ''                         -1     Length Dependence of Mu20, um
    77 Wmu20           ''                         -1     Width Dependence of Mu20, um
    78 Mu2b            ''                         -1     Sens. of Mu20 to Substrate Bias, 1/V
    79 Lmu2b           ''                         -1     Length Dependence of Mu2b, um/V
    80 Wmu2b           ''                         -1     Width Dependence of Mu2b, um/V
    81 Mu2g            ''                         -1     Sens. of Mu20 to Gate Bias, 1/V
    82 Lmu2g           ''                         -1     Length Dependence of Mu2g, um/V
    83 Wmu2g           ''                         -1     Width Dependence of Mu2g, um/V
    84 Mu30            ''                         -1     Linear Empirical Parameter in Beta0 Expression, cm^2/(V^2*s)
    85 Lmu30           ''                         -1     Length Dependence of Mu30, um*cm^2/(V^2*s)
    86 Wmu30           ''                         -1     Width Dependence of Mu30, um*cm^2/(V^2*s)
    87 Mu3g            ''                         -1     Sens. of Mu3 to Gate Bias, cm^2/(V^3*s)
    88 Lmu3g           ''                         -1     Length Dependence of Mu3g, um*cm^2/(V^3*s)
    89 Wmu3g           ''                         -1     Width Dependence of Mu3g, um*cm^2/(V^3*s)
    90 Mu40            ''                         -1     Quadratic Empirical Parameter in Beta0 Expression, cm^2/(V^3*s)
    91 Lmu40           ''                         -1     Length Dependence of Mu40, um*cm^2/(V^3*s)
    92 Wmu40           ''                         -1     Width Dependence of Mu40, um*cm^2/(V^3*s)
    93 Mu4b            ''                         -1     Sens. of Mu4 to Substrate Bias, cm^2/(V^4*s)
    94 Lmu4b           ''                         -1     Length Dependence of Mu4b, um*cm^2/(V^4*s)
    95 Wmu4b           ''                         -1     Width Dependence of Mu4b, um*cm^2/(V^4*s)
    96 Mu4g            ''                         -1     Sens. of Mu4 to Gate Bias, cm^2/(V^4*s)
    97 Lmu4g           ''                         -1     Length Dependence of Mu4g, um*cm^2/(V^4*s)
    98 Wmu4g           ''                         -1     Width Dependence of Mu4g, um*cm^2/(V^4*s)
    99 Ub0             ''                         -1     Mobility Reduction to Vertical Field at Vbs=0, 1/V^2
   100 Lub0            ''                         -1     Length Dependence of Ub0, um/V^2
   101 Wub0            ''                         -1     Width Dependence of Ub0, um/V^2
   102 Ubb             ''                         -1     Sens. of Ub to Substrate Bias, 1/V^3
   103 Lubb            ''                         -1     Length Dependence of Ubb, um/V^3
   104 Wubb            ''                         -1     Width Dependence of Ubb, um/V^3
   105 Vof0            ''                          9     Threshold Voltage Offset in the Subthreshold Region, V
   106 Lvof0           ''                         -1     Length Dependence of Vof0, um*V
   107 Wvof0           ''                         -1     Width Dependence of Vof0, um*V
   108 Vofb            ''                         -1     Sens. of Vof to Substrate Bias
   109 Lvofb           ''                         -1     Length Dependence of Vofb, um
   110 Wvofb           ''                         -1     Width Dependence of Vofb, um
   111 Vofd            ''                         -1     Sens. of Vof to Substrate Bias
   112 Lvofd           ''                         -1     Length Dependence of Vofd, um
   113 Wvofd           ''                         -1     Width Dependence of Vofd, um
   114 Ai0             ''                         -1     Hot-Electron-Induced Rout Degradation Coeff.
   115 Lai0            ''                         -1     Length Dependence of Ai0, um
   116 Wai0            ''                         -1     Width Dependence of Ai0, um
   117 Aib             ''                         -1     Sens. of Vof to Substrate Bias
   118 Laib            ''                         -1     Length Dependence of Aib, um
   119 Waib            ''                         -1     Width Dependence of Aib, um
   120 Vghigh          ''                          9     Upper Bound for the Transition Region, V
   121 Lvghigh         ''                         -1     Length Dependence of Vghigh, um*V
   122 Wvghigh         ''                         -1     Width Dependence of Vghigh, um*V
   123 Vglow           ''                          9     Upper Bound for the Transition Region, V
   124 Lvglow          ''                         -1     Length Dependence of Vglow, um*V
   125 Wvglow          ''                         -1     Width Dependence of Vglow, um*V
   126 Kf              ''                         -1     Flicker Noise Coefficient
   127 Af              ''                         -1     Flicker Noise Exponent
   128 Ffe             ''                         -1     Flicker noise frequency exponent
   129 Rg              ''                          1     Gate Resistance, Ohm
   130 N               ''                         -1     Bulk P-N Emission Coefficient
   131 Imax            ''                         10     Explosion current, A
   132 wVsubfwd        ''                          9     Substrate Junction Forward Bias (warning), V
   133 wBvsub          ''                          9     Substrate Junction Reverse Breakdown Voltage (warning), V
   134 wBvg            ''                          9     Gate Oxide Breakdown Voltage (warning), V
   135 wBvds           ''                          9     Drain-Source Breakdown Voltage (warning), V
   136 wIdsmax         ''                         10     Maximum Drain-Source Current (warning), A
   137 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

BSIM3_Model BSIM3_Model 362
     1 NMOS            y_n1                       -1     Model Type - YES or NO
     2 PMOS            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          8                          -1     1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
     4 Version         3.1                        -1     Parameter for Model Version
     5 Mobmod          ''                         -1     Mobility Model Selector
     6 Capmod          ''                         -1     Capacitance Model Selector
     7 Noimod          ''                         -1     Noise Model Selector
     8 Paramchk        ''                         -1     Model Parameter Checking Selector
     9 Binunit         ''                         -1     Bin Unit Selector
    10 Rg              ''                          1     Gate Resistance, Ohm
    11 Rsh             ''                         -1     Drain and Source Diffusion Sheet Resistance, Ohm/Sq
    12 Nj              ''                         -1     Bulk P-N Emission Coefficient
    13 Xti             ''                         -1     Junction Current Temperature Exponent
    14 Js              ''                         -1     Gate Saturation Current, A/m^2
    15 Jsw             ''                         -1     Sidewall Junction Reverse Saturation Current, A/m^2
    16 Lint            ''                          5     Length Reduction Parameter, m
    17 Ll              ''                          5     Length Reduction Parameter, m
    18 Lln             ''                         -1     Length Reduction Parameter
    19 Lw              ''                          5     Length Reduction Parameter, m
    20 Lwn             ''                         -1     Length Reduction Parameter
    21 Lwl             ''                          5     Length Reduction Parameter, m
    22 Wint            ''                          5     Width Reduction Parameter, m
    23 Wl              ''                          5     Width Reduction Parameter, m
    24 Wln             ''                         -1     Width Reduction Parameter
    25 Ww              ''                          5     Width Reduction Parameter, m
    26 Wwn             ''                         -1     Width Reduction Parameter
    27 Wwl             ''                          5     Width Reduction Parameter, m
    28 Tnom            ''                         12     Parameter Measurement temperature, Celsius
    29 Tox             ''                          5     Oxide Thickness, m
    30 Cj              ''                         -1     Zero-bias Bulk Junction Cap., F/m^2
    31 Mj              ''                         -1     Junction  grading coefficient
    32 Cjsw            ''                         -1     Zero-bias Bulk Junction Sidewall Cap., F/m
    33 Mjsw            ''                         -1     Junction Sidewall grading coefficient
    34 Pb              ''                          9     Bulk Junction Potential, V
    35 Pbsw            ''                          9     Bulk Side Junction Potential, V
    36 Cjswg           ''                         -1     Source/Drain (Gate Side) Sidewall Cap., F/m
    37 Mjswg           ''                         -1     Source/Drain (Gate Side) Sidewall grading coefficient
    38 Pbswg           ''                          9     Source/Drain (Gate Side) Sidewall Junction Potential, V
    39 Cgso            ''                         -1     G-S Overlap Cap., F/m
    40 Cgdo            ''                         -1     G-D Overlap Cap., F/m
    41 Cgbo            ''                         -1     G-B Overlap Cap., F/m
    42 Xpart           ''                         -1     Coefficient of Channel Charge Share
    43 Dwg             ''                         -1     Coeff. of Weffs Gate Bias Dependence, m/V
    44 Ldwg            ''                         -1     Length Dependence of Dwg
    45 Wdwg            ''                         -1     Width Dependence of Dwg
    46 Pdwg            ''                         -1     Cross Dependence of Dwg
    47 Dwb             ''                         -1     Coeff. of Weffs Bulk Bias Dependence, m/V^(1/2)
    48 Ldwb            ''                         -1     Length Dependence of Dwb
    49 Wdwb            ''                         -1     Width Dependence of Dwb
    50 Pdwb            ''                         -1     Cross Dependence of Dwb
    51 Nch             ''                         -1     Channel Doping Concentration, 1/cm^3
    52 Lnch            ''                         -1     Length Dependence of Nch
    53 Wnch            ''                         -1     Width Dependence of Nch
    54 Pnch            ''                         -1     Cross Dependence of Nch
    55 Nsub            ''                         -1     Substrate Doping Concentration, 1/cm^3
    56 Lnsub           ''                         -1     Length Dependence of Nsub
    57 Wnsub           ''                         -1     Width Dependence of Nsub
    58 Pnsub           ''                         -1     Cross Dependence of Nsub
    59 Ngate           ''                         -1     Gate Doping Concentration, 1/cm^3
    60 Lngate          ''                         -1     Length Dependence of Ngate
    61 Wngate          ''                         -1     Width Dependence of Ngate
    62 Pngate          ''                         -1     Cross Dependence of Ngate
    63 Gamma1          ''                         -1     Body-Effect Coeff. near the Interface, V^(1/2)
    64 Lgamma1         ''                         -1     Length Dependence of Gamma1
    65 Wgamma1         ''                         -1     Width Dependence of Gamma1
    66 Pgamma1         ''                         -1     Cross Dependence of Gamma1
    67 Gamma2          ''                         -1     Body-Effect Coeff. in the Bulk, V^(1/2)
    68 Lgamma2         ''                         -1     Length Dependence of Gamma2
    69 Wgamma2         ''                         -1     Width Dependence of Gamma2
    70 Pgamma2         ''                         -1     Cross Dependence of Gamma2
    71 Xt              ''                          5     Doping Depth, m
    72 Lxt             ''                         -1     Length Dependence of Xt
    73 Wxt             ''                         -1     Width Dependence of Xt
    74 Pxt             ''                         -1     Cross Dependence of Xt
    75 Vbm             ''                          9     Maximum Body Voltage, V
    76 Lvbm            ''                         -1     Length Dependence of Vbm
    77 Wvbm            ''                         -1     Width Dependence of Vbm
    78 Pvbm            ''                         -1     Cross Dependence of Vbm
    79 Vbx             ''                          9     Vth Transition Body Voltage, V
    80 Lvbx            ''                         -1     Length Dependence of Vbx
    81 Wvbx            ''                         -1     Width Dependence of Vbx
    82 Pvbx            ''                         -1     Cross Dependence of Vbx
    83 Xj              ''                          5     Junction Depth, m
    84 Lxj             ''                         -1     Length Dependence of Xj
    85 Wxj             ''                         -1     Width Dependence of Xj
    86 Pxj             ''                         -1     Cross Dependence of Xj
    87 U0              ''                         -1     Low-Field Mobility at Tnom, cm^2/(V*s)
    88 Lu0             ''                         -1     Length Dependence of U0
    89 Wu0             ''                         -1     Width Dependence of U0
    90 Pu0             ''                         -1     Cross Dependence of U0
    91 Vth0            ''                          9     Zero-Bias Threshold Voltage, V
    92 Lvth0           ''                         -1     Length Dependence of Vth0
    93 Wvth0           ''                         -1     Width Dependence of Vth0
    94 Pvth0           ''                         -1     Cross Dependence of Vth0
    95 K1              ''                         -1     First-Order Body Effect Coefficient, V^(1/2)
    96 Lk1             ''                         -1     Length Dependence of K1
    97 Wk1             ''                         -1     Width Dependence of K1
    98 Pk1             ''                         -1     Cross Dependence of K1
    99 K2              ''                         -1     Second-Order Body Effect Coefficient
   100 Lk2             ''                         -1     Length Dependence of K2
   101 Wk2             ''                         -1     Width Dependence of K2
   102 Pk2             ''                         -1     Cross Dependence of K2
   103 K3              ''                         -1     Narrow Width Effect Coefficient
   104 Lk3             ''                         -1     Length Dependence of K3
   105 Wk3             ''                         -1     Width Dependence of K3
   106 Pk3             ''                         -1     Cross Dependence of K3
   107 K3b             ''                         -1     Narrow Width Effect Coefficient, 1/V
   108 Lk3b            ''                         -1     Length Dependence of K3b
   109 Wk3b            ''                         -1     Width Dependence of K3b
   110 Pk3b            ''                         -1     Cross Dependence of K3b
   111 W0              ''                          5     Narrow Width Effect Parameter, m
   112 Lw0             ''                         -1     Length Dependence of W0
   113 Ww0             ''                         -1     Width Dependence of W0
   114 Pw0             ''                         -1     Cross Dependence of W0
   115 Nlx             ''                          5     Lateral Non-Uniform Doping Coeff., m
   116 Lnlx            ''                         -1     Length Dependence of Nlx
   117 Wnlx            ''                         -1     Width Dependence of Nlx
   118 Pnlx            ''                         -1     Cross Dependence of Nlx
   119 Dvt0            ''                         -1     First Coeff. of Short-Channel Effect on Vth
   120 Ldvt0           ''                         -1     Length Dependence of Dvt0
   121 Wdvt0           ''                         -1     Width Dependence of Dvt0
   122 Pdvt0           ''                         -1     Cross Dependence of Dvt0
   123 Dvt1            ''                         -1     Second Coeff. of Short-Channel Effect on Vth
   124 Ldvt1           ''                         -1     Length Dependence of Dvt1
   125 Wdvt1           ''                         -1     Width Dependence of Dvt1
   126 Pdvt1           ''                         -1     Cross Dependence of Dvt1
   127 Dvt2            ''                         -1     Body-Bias Coeff. of Short-Channel Effect on Vth, 1/V
   128 Ldvt2           ''                         -1     Length Dependence of Dvt2
   129 Wdvt2           ''                         -1     Width Dependence of Dvt2
   130 Pdvt2           ''                         -1     Cross Dependence of Dvt2
   131 Dvt0w           ''                         -1     First Coeff. of Narrow-Width Effect on Vth
   132 Ldvt0w          ''                         -1     Length Dependence of Dvt0w
   133 Wdvt0w          ''                         -1     Width Dependence of Dvt0w
   134 Pdvt0w          ''                         -1     Cross Dependence of Dvt0w
   135 Dvt1w           ''                         -1     Second Coeff. of Narrow-Width Effect on Vth
   136 Ldvt1w          ''                         -1     Length Dependence of Dvt1w
   137 Wdvt1w          ''                         -1     Width Dependence of Dvt1w
   138 Pdvt1w          ''                         -1     Cross Dependence of Dvt1w
   139 Dvt2w           ''                         -1     Body-Bias Coeff. of Narrow-Width Effect on Vth, 1/V
   140 Ldvt2w          ''                         -1     Length Dependence of Dvt2w
   141 Wdvt2w          ''                         -1     Width Dependence of Dvt2w
   142 Pdvt2w          ''                         -1     Cross Dependence of Dvt2w
   143 Ua              ''                         -1     First Order Mobility Degradation Coeff., m/V
   144 Lua             ''                         -1     Length Dependence of Ua
   145 Wua             ''                         -1     Width Dependence of Ua
   146 Pua             ''                         -1     Cross Dependence of Ua
   147 Ub              ''                         -1     Second Order Mobility Degradation Coeff., (m/V)^2
   148 Lub             ''                         -1     Length Dependence of Ub
   149 Wub             ''                         -1     Width Dependence of Ub
   150 Pub             ''                         -1     Cross Dependence of Ub
   151 Uc              ''                         -1     Body-Bias Mobility Degradation Coeff., m/V^2 (1/V)
   152 Luc             ''                         -1     Length Dependence of Uc
   153 Wuc             ''                         -1     Width Dependence of Uc
   154 Puc             ''                         -1     Cross Dependence of Uc
   155 Delta           ''                          9     Effective Vds parameter, V
   156 Ldelta          ''                         -1     Length Dependence of Delta
   157 Wdelta          ''                         -1     Width Dependence of Delta
   158 Pdelta          ''                         -1     Cross Dependence of Delta
   159 Rdsw            ''                         -1     Parasitic Resistance per Unit Width, Ohms*um
   160 Lrdsw           ''                         -1     Length Dependence of Rdsw
   161 Wrdsw           ''                         -1     Width Dependence of Rdsw
   162 Prdsw           ''                         -1     Cross Dependence of Rdsw
   163 Prwg            ''                         -1     Gate-Bias Effect on Parasitic Resistance, 1/V
   164 Lprwg           ''                         -1     Length Dependence of Prwg
   165 Wprwg           ''                         -1     Width Dependence of Prwg
   166 Pprwg           ''                         -1     Cross Dependence of Prwg
   167 Prwb            ''                         -1     Body Effect on Parasitic Resistance, 1/V^(1/2)
   168 Lprwb           ''                         -1     Length Dependence of Prwb
   169 Wprwb           ''                         -1     Width Dependence of Prwb
   170 Pprwb           ''                         -1     Cross Dependence of Prwb
   171 Wr              ''                         -1     Width Dependence of Rds
   172 Lwr             ''                         -1     Length Dependence of Wr
   173 Wwr             ''                         -1     Width Dependence of Wr
   174 Pwr             ''                         -1     Cross Dependence of Wr
   175 Vsat            ''                         -1     Saturation Velocity at Tnom, m/s
   176 Lvsat           ''                         -1     Length Dependence of Vsat
   177 Wvsat           ''                         -1     Width Dependence of Vsat
   178 Pvsat           ''                         -1     Cross Dependence of Vsat
   179 A0              ''                         -1     Bulk Charge Effect Coeff.
   180 La0             ''                         -1     Length Dependence of A0
   181 Wa0             ''                         -1     Width Dependence of A0
   182 Pa0             ''                         -1     Cross Dependence of A0
   183 Keta            ''                         -1     Body-Bias Coeff. of the Bulk Charge Effect, 1/V
   184 Lketa           ''                         -1     Length Dependence of Keta
   185 Wketa           ''                         -1     Width Dependence of Keta
   186 Pketa           ''                         -1     Cross Dependence of Keta
   187 Ags             ''                         -1     Gate Bias Coeff. of Abulk, 1/V
   188 Lags            ''                         -1     Length Dependence of Ags
   189 Wags            ''                         -1     Width Dependence of Ags
   190 Pags            ''                         -1     Cross Dependence of Ags
   191 A1              ''                         -1     First Non-Saturation Factor, 1/V
   192 La1             ''                         -1     Length Dependence of A1
   193 Wa1             ''                         -1     Width Dependence of A1
   194 Pa1             ''                         -1     Cross Dependence of A1
   195 A2              ''                         -1     Second Non-Saturation Factor
   196 La2             ''                         -1     Length Dependence of A2
   197 Wa2             ''                         -1     Width Dependence of A2
   198 Pa2             ''                         -1     Cross Dependence of A2
   199 B0              ''                          5     Bulk Charge Effect Coeff. for Channel Width, m
   200 Lb0             ''                         -1     Length Dependence of B0
   201 Wb0             ''                         -1     Width Dependence of B0
   202 Pb0             ''                         -1     Cross Dependence of B0
   203 B1              ''                          5     Bulk Charge Effect Width Offset, m
   204 Lb1             ''                         -1     Length Dependence of B1
   205 Wb1             ''                         -1     Width Dependence of B1
   206 Pb1             ''                         -1     Cross Dependence of B1
   207 Alpha0          ''                         -1     First Parameter of Impact Ionization Current, m/V
   208 Lalpha0         ''                         -1     Length Dependence of Alpha0
   209 Walpha0         ''                         -1     Width Dependence of Alpha0
   210 Palpha0         ''                         -1     Cross Dependence of Alpha0
   211 Beta0           ''                         -1     First Parameter of Impact Ionization Current, m/V
   212 Lbeta0          ''                         -1     Length Dependence of Beta0
   213 Wbeta0          ''                         -1     Width Dependence of Beta0
   214 Pbeta0          ''                         -1     Cross Dependence of Beta0
   215 Voff            ''                          9     Offset Voltage in Subthreshold Region, V
   216 Lvoff           ''                         -1     Length Dependence of Voff
   217 Wvoff           ''                         -1     Width Dependence of Voff
   218 Pvoff           ''                         -1     Cross Dependence of Voff
   219 Nfactor         ''                         -1     Subthreshold Swing Factor
   220 Lnfactor        ''                         -1     Length Dependence of Nfactor
   221 Wnfactor        ''                         -1     Width Dependence of Nfactor
   222 Pnfactor        ''                         -1     Cross Dependence of Nfactor
   223 Cdsc            ''                         -1     Drain/Source and Channel Coupling Capacitance, F/m^2
   224 Lcdsc           ''                         -1     Length Dependence of Cdsc
   225 Wcdsc           ''                         -1     Width Dependence of Cdsc
   226 Pcdsc           ''                         -1     Cross Dependence of Cdsc
   227 Cdscb           ''                         -1     Body-Bias Dependence of Cdsc, F/(V*m^2)
   228 Lcdscb          ''                         -1     Length Dependence of Cdscb
   229 Wcdscb          ''                         -1     Width Dependence of Cdscb
   230 Pcdscb          ''                         -1     Cross Dependence of Cdscb
   231 Cdscd           ''                         -1     Drain-Bias Dependence of Cdsc, F/(V*m^2)
   232 Lcdscd          ''                         -1     Length Dependence of Cdscd
   233 Wcdscd          ''                         -1     Width Dependence of Cdscd
   234 Pcdscd          ''                         -1     Cross Dependence of Cdscd
   235 Cit             ''                         -1     Capacitance due to Interface Charge, F/m^2
   236 Lcit            ''                         -1     Length Dependence of Cit
   237 Wcit            ''                         -1     Width Dependence of Cit
   238 Pcit            ''                         -1     Cross Dependence of Cit
   239 Eta0            ''                         -1     Subthreshold Region DIBL Coeff.
   240 Leta0           ''                         -1     Length Dependence of Eta0
   241 Weta0           ''                         -1     Width Dependence of Eta0
   242 Peta0           ''                         -1     Cross Dependence of Eta0
   243 Etab            ''                         -1     Subthreshold Region DIBL Coeff.
   244 Letab           ''                         -1     Length Dependence of Etab
   245 Wetab           ''                         -1     Width Dependence of Etab
   246 Petab           ''                         -1     Cross Dependence of Etab
   247 Dsub            ''                         -1     DIBL Coeff. in Subthreshold Region
   248 Ldsub           ''                         -1     Length Dependence of Dsub
   249 Wdsub           ''                         -1     Width Dependence of Dsub
   250 Pdsub           ''                         -1     Cross Dependence of Dsub
   251 Drout           ''                         -1     DIBL Coeff. of Output Resistance
   252 Ldrout          ''                         -1     Length Dependence of Drout
   253 Wdrout          ''                         -1     Width Dependence of Drout
   254 Pdrout          ''                         -1     Cross Dependence of Drout
   255 Pclm            ''                         -1     Channel Length Modulation Coeff.
   256 Lpclm           ''                         -1     Length Dependence of Pclm
   257 Wpclm           ''                         -1     Width Dependence of Pclm
   258 Ppclm           ''                         -1     Cross Dependence of Pclm
   259 Pdiblc1         ''                         -1     Drain Induced Barrier Lowering Effect Coeff. 1
   260 Lpdiblc1        ''                         -1     Length Dependence of Pdiblc1
   261 Wpdiblc1        ''                         -1     Width Dependence of Pdiblc1
   262 Ppdiblc1        ''                         -1     Cross Dependence of Pdiblc1
   263 Pdiblc2         ''                         -1     Drain Induced Barrier Lowering Effect Coeff. 2
   264 Lpdiblc2        ''                         -1     Length Dependence of Pdiblc2
   265 Wpdiblc2        ''                         -1     Width Dependence of Pdiblc2
   266 Ppdiblc2        ''                         -1     Cross Dependence of Pdiblc2
   267 Pdiblcb         ''                         -1     Body-Effect on Drain Induced Barrier Lowering, 1/V
   268 Lpdiblcb        ''                         -1     Length Dependence of Pdiblcb
   269 Wpdiblcb        ''                         -1     Width Dependence of Pdiblcb
   270 Ppdiblcb        ''                         -1     Cross Dependence of Pdiblcb
   271 Pscbe1          ''                         -1     Substrate Current Body-Effect Coeff. 1, V/m
   272 Lpscbe1         ''                         -1     Length Dependence of Pscbe1
   273 Wpscbe1         ''                         -1     Width Dependence of Pscbe1
   274 Ppscbe1         ''                         -1     Cross Dependence of Pscbe1
   275 Pscbe2          ''                         -1     Substrate Current Body-Effect Coeff. 2, m/V
   276 Lpscbe2         ''                         -1     Length Dependence of Pscbe2
   277 Wpscbe2         ''                         -1     Width Dependence of Pscbe2
   278 Ppscbe2         ''                         -1     Cross Dependence of Pscbe2
   279 Pvag            ''                         -1     Gate voltage dependence of Rout
   280 Lpvag           ''                         -1     Length Dependence of Pvag
   281 Wpvag           ''                         -1     Width Dependence of Pvag
   282 Ppvag           ''                         -1     Cross Dependence of Pvag
   283 Ute             ''                         -1     Mobility Temperature Exponent
   284 Lute            ''                         -1     Length Dependence of Ute
   285 Wute            ''                         -1     Width Dependence of Ute
   286 Pute            ''                         -1     Cross Dependence of Ute
   287 At              ''                         -1     Temperature Coefficient of Vsat, m/s
   288 Lat             ''                         -1     Length Dependence of At
   289 Wat             ''                         -1     Width Dependence of At
   290 Pat             ''                         -1     Cross Dependence of At
   291 Ua1             ''                         -1     Temperature Coefficient of Ua, m/V
   292 Lua1            ''                         -1     Length Dependence of Ua1
   293 Wua1            ''                         -1     Width Dependence of Ua1
   294 Pua1            ''                         -1     Cross Dependence of Ua1
   295 Ub1             ''                         -1     Temperature Coefficient of Ub, (m/V)^2
   296 Lub1            ''                         -1     Length Dependence of Ub1
   297 Wub1            ''                         -1     Width Dependence of Ub1
   298 Pub1            ''                         -1     Cross Dependence of Ub1
   299 Uc1             ''                         -1     Temperature Coefficient of Uc, 1/V
   300 Luc1            ''                         -1     Length Dependence of Uc1
   301 Wuc1            ''                         -1     Width Dependence of Uc1
   302 Puc1            ''                         -1     Cross Dependence of Uc1
   303 Kt1             ''                          9     Temperature Coefficient of Vth, V
   304 Lkt1            ''                         -1     Length Dependence of Kt1
   305 Wkt1            ''                         -1     Width Dependence of Kt1
   306 Pkt1            ''                         -1     Cross Dependence of Kt1
   307 Kt1l            ''                         -1     Channel Length Sensitivity of Kt1, V*m
   308 Lkt1l           ''                         -1     Length Dependence of Kt1l
   309 Wkt1l           ''                         -1     Width Dependence of Kt1l
   310 Pkt1l           ''                         -1     Cross Dependence of Kt1l
   311 Kt2             ''                         -1     Body Coefficient of Kt1
   312 Lkt2            ''                         -1     Length Dependence of Kt2
   313 Wkt2            ''                         -1     Width Dependence of Kt2
   314 Pkt2            ''                         -1     Cross Dependence of Kt2
   315 Prt             ''                         -1     Temperature Coefficient of Rdsw, Ohms*um
   316 Lprt            ''                         -1     Length Dependence of Prt
   317 Wprt            ''                         -1     Width Dependence of Prt
   318 Pprt            ''                         -1     Cross Dependence of Prt
   319 Cgsl            ''                         -1     Light Doped Source-Gate Overlap Capacitance, F/m
   320 Lcgsl           ''                         -1     Length Dependence of Cgsl
   321 Wcgsl           ''                         -1     Width Dependence of Cgsl
   322 Pcgsl           ''                         -1     Cross Dependence of Cgsl
   323 Cgdl            ''                         -1     Light Doped Drain-Gate Overlap Capacitance, F/m
   324 Lcgdl           ''                         -1     Length Dependence of Cgdl
   325 Wcgdl           ''                         -1     Width Dependence of Cgdl
   326 Pcgdl           ''                         -1     Cross Dependence of Cgdl
   327 Ckappa          ''                         -1     Coeff. for Light Doped Overlap Capacitance, F/m
   328 Lckappa         ''                         -1     Length Dependence of Ckappa
   329 Wckappa         ''                         -1     Width Dependence of Ckappa
   330 Pckappa         ''                         -1     Cross Dependence of Ckappa
   331 Cf              ''                         -1     Fringing Field Capacitance, F/m
   332 Lcf             ''                         -1     Length Dependence of Cf
   333 Wcf             ''                         -1     Width Dependence of Cf
   334 Pcf             ''                         -1     Cross Dependence of Cf
   335 Clc             ''                          5     Constant Term for the Short Channel C-V Model, m
   336 Lclc            ''                         -1     Length Dependence of Clc
   337 Wclc            ''                         -1     Width Dependence of Clc
   338 Pclc            ''                         -1     Cross Dependence of Clc
   339 Cle             ''                         -1     Exponential Term for the Short Channel C-V Model
   340 Lcle            ''                         -1     Length Dependence of Cle
   341 Wcle            ''                         -1     Width Dependence of Cle
   342 Pcle            ''                         -1     Cross Dependence of Cle
   343 Dlc             ''                          5     Length Offset Fitting Parameter from C-V Model, m
   344 Dwc             ''                          5     Width Offset Fitting Parameter from C-V Model, m
   345 Vfbcv           ''                          9     Flat Band Voltage Parameter for Capmod=0 only, V
   346 Lvfbcv          ''                         -1     Length Dependence of Vfbcv
   347 Wvfbcv          ''                         -1     Width Dependence of Vfbcv
   348 Pvfbcv          ''                         -1     Cross Dependence of Vfbcv
   349 Kf              ''                         -1     Flicker Noise Coefficient
   350 Af              ''                         -1     Flicker Noise Exponent
   351 Ef              ''                         -1     Flicker Noise Frequency Exponent
   352 Em              ''                         -1     Flicker Noise Parameter, V/m
   353 Noia            ''                         -1     Noise Parameter A
   354 Noib            ''                         -1     Noise Parameter B
   355 Noic            ''                         -1     Noise Parameter C
   356 Imax            ''                         10     Explosion current, A
   357 wVsubfwd        ''                          9     Substrate Junction Forward Bias (warning), V
   358 wBvsub          ''                          9     Substrate Junction Reverse Breakdown Voltage (warning), V
   359 wBvg            ''                          9     Gate Oxide Breakdown Voltage (warning), V
   360 wBvds           ''                          9     Drain-Source Breakdown Voltage (warning), V
   361 wIdsmax         ''                         10     Maximum Drain-Source Current (warning), A
   362 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

BudLinearization BudLinearization  2
     1 SimInstanceName ''                         -1     Simulation component name
     2 LinearizeComponent ''                         -1     Component to linearize (repeatable)
END_ELEMENT

C         C          7
     1 C               1.0pF                       4     Capacitance
     2 Temp            ''                         12     Temperature
     3 Tnom            ''                         12     Nominal temperature
     4 TC1             ''                         12     Temperature coefficient; per degree Celsius
     5 TC2             ''                         12     Temperature coefficient; per degree Celsius squared
     6 wBV             ''                          9     Breakdown voltage (warning)
     7 InitCond        ''                         -1     Initial condition for transient analysis
END_ELEMENT

CAPP2     CAPP2      6
     1 C               1.0pF                       4     Capacitance
     2 TanD            0.001                      -1     dielectric loss tangent
     3 Q               50.0                       -1     quality factor
     4 FreqQ           300.0MHz                    0     reference frequency for q
     5 FreqRes         500.0MHz                    0     resonance frequency
     6 Exp             2.0                        -1     exponent for frequency dependance of q
END_ELEMENT

CAPP2_Conn CAPP2_Conn  6
     1 C               1.0pF                       4     Capacitance
     2 TanD            0.001                      -1     dielectric loss tangent
     3 Q               50.0                       -1     quality factor
     4 FreqQ           300.0MHz                    0     reference frequency for q
     5 FreqRes         500.0MHz                    0     resonance frequency
     6 Exp             2.0                        -1     exponent for frequency dependance of q
END_ELEMENT

CAPP2_Pad1 CAPP2_Pad1  9
     1 C               1.0pF                       4     Capacitance
     2 TanD            0.001                      -1     dielectric loss tangent
     3 Q               50.0                       -1     quality factor
     4 FreqQ           300.0MHz                    0     reference frequency for q
     5 FreqRes         500.0MHz                    0     resonance frequency
     6 Exp             2.0                        -1     exponent for frequency dependance of q
     7 W               25.0mils                    5     W
     8 S               10.0mils                    5     S
     9 L1              50.0mils                    5     L
END_ELEMENT

CAPP2_Space CAPP2_Space  7
     1 C               1.0pF                       4     Capacitance
     2 TanD            0.001                      -1     dielectric loss tangent
     3 Q               50.0                       -1     quality factor
     4 FreqQ           300.0MHz                    0     reference frequency for q
     5 FreqRes         500.0MHz                    0     resonance frequency
     6 Exp             2.0                        -1     exponent for frequency dependance of q
     7 L1              50.0mils                    5     L
END_ELEMENT

CAPQ      CAPQ       4
     1 C               1.0pF                       4     Capacitance
     2 Q               50.0                       -1     Quality factor
     3 F               100.0MHz                    0     Reference frequency for q
     4 Mode            loss_freq                  -1     Loss Mode for This Device
END_ELEMENT

CCCS      CCCS       5
     1 G               1                          -1     Complex current gain, e.g. polar(10, 45), or P(j*omega)/Q(j*omega)
     2 T               1.0nsec                     6     Time delay
     3 R1              0ohm                        1     Input Resistance
     4 R2              1e100ohm                    1     Output Resistance
     5 F               0.0GHz                      0     Frequency at which G magnitude is down 3 dB
END_ELEMENT

CCCS_Z    CCCS_Z     4
     1 Gain            1                          -1     Constant gain term
     2 Num             1                          -1     Numerator coefficients of transfer function
     3 Den             list(1,sqrt(2),1)          -1     Denominator coefficients of transfer function
     4 TimeStep        timestep                    6     Sampling time period
END_ELEMENT

CCVS      CCVS       5
     1 G               1ohm                        1     Complex Transresistance, e.g. polar(10 Ohm, 45), or P(j*omega)/Q(j*omega)
     2 T               1.0nsec                     6     Time delay
     3 R1              0ohm                        1     Input Resistance
     4 R2              0ohm                        1     Output Resistance
     5 F               0.0GHz                      0     Frequency at which G magnitude is down 3 dB
END_ELEMENT

CCVS_Z    CCVS_Z     4
     1 Gain            1                          -1     Constant gain term
     2 Num             1                          -1     Numerator coefficients of transfer function
     3 Den             list(1,sqrt(2),1)          -1     Denominator coefficients of transfer function
     4 TimeStep        timestep                    6     Sampling time period
END_ELEMENT

CDRange   CDRange    1
     1 Function        list(our_cdr=cdrange(nf2,inpwr_lin,outpwr_lin,outpwr)) -1     cdrange(noise_fig,inpwr_lin,outpwr_lin,outpwr)
END_ELEMENT

CIND      CIND       2
     1 N               10.0                       -1     Number of turns
     2 AL              0.15nH                      3     Inductance index
END_ELEMENT

CIND2     CIND2      5
     1 N               10.0                       -1     Number of turns
     2 AL              0.15nH                      3     Inductance index
     3 R               2.5ohm                      1     Total winding resistance
     4 Q               50.0                       -1     Core quality factor
     5 Freq            125.0MHz                    0     Frequency at which Q is specified
END_ELEMENT

CLIN      CLIN       4
     1 Ze              100.0ohm                    1     Even Mode Characteristic Impedance
     2 Zo              25.0ohm                     1     Odd Mode Characteristic Impedance
     3 E               90deg                       7     Electrical Length
     4 F               1GHz                        0     Reference Frequency for Electrical Length
END_ELEMENT

CLINP     CLINP      8
     1 Ze              100.0ohm                    1     Even Mode Characteristic Impedance
     2 Zo              25.0ohm                     1     Odd Mode Characteristic Impedance
     3 L               500.0mils                   5     Physical Length
     4 Ke              2.05                       -1     Even Mode Effective Dielectric Constant
     5 Ko              2.15                       -1     Odd Mode Effective Dielectric Constant
     6 Ae              0.0001                     -1     Even Mode Attenuation (dB / meter)
     7 Ao              0.0001                     -1     Odd Mode Attenuation (dB / meter)
     8 Temp            ''                         12     Physical temperature
END_ELEMENT

COAX      COAX       8
     1 Di              36.0mils                    5     Diameter of Inner Conductor
     2 Do              131.0mils                   5     Diameter of Outer Conductor
     3 L               1000.0mils                  5     Length
     4 Er              2.1                        -1     Dielectric Constant of Dielectric Between Inner and Outer Conductors
     5 TanD            0.002                      -1     Dielectric loss tangent
     6 Rho             1                          -1     Conductor Resistivity (Relative to Copper)
     7 Sigma           0                          -1     Dielectric conductivity
     8 Temp            ''                         12     Physical temperature
END_ELEMENT

COMBINE2ML COMBINE2ML  3
     1 Coupled[1]      ''                         -1     1st component to be combined
     2 Coupled[2]      ''                         -1     2nd component to be combined
     3 S               5mils                       5     Spacing between Coupled[1] and Coupled[2]
END_ELEMENT

COMBINE3ML COMBINE3ML  5
     1 Coupled[1]      ''                         -1     1st component to be combined
     2 Coupled[2]      ''                         -1     2nd component to be combined
     3 Coupled[3]      ''                         -1     3rd component to be combined
     4 S[1]            5mils                       5     Spacing between Coupled[1] and Coupled[2]
     5 S[2]            5mils                       5     Spacing between Coupled[2] and Coupled[3]
END_ELEMENT

COMBINE4ML COMBINE4ML  7
     1 Coupled[1]      ''                         -1     1st component to be combined
     2 Coupled[2]      ''                         -1     2nd component to be combined
     3 Coupled[3]      ''                         -1     3rd component to be combined
     4 Coupled[4]      ''                         -1     4th component to be combined
     5 S[1]            5mils                       5     Spacing between Coupled[1] and Coupled[2]
     6 S[2]            5mils                       5     Spacing between Coupled[2] and Coupled[3]
     7 S[3]            5mils                       5     Spacing between Coupled[3] and Coupled[4]
END_ELEMENT

COMBINE5ML COMBINE5ML  9
     1 Coupled[1]      ''                         -1     1st component to be combined
     2 Coupled[2]      ''                         -1     2nd component to be combined
     3 Coupled[3]      ''                         -1     3rd component to be combined
     4 Coupled[4]      ''                         -1     4th component to be combined
     5 Coupled[5]      ''                         -1     5th component to be combined
     6 S[1]            5mils                       5     Spacing between Coupled[1] and Coupled[2]
     7 S[2]            5mils                       5     Spacing between Coupled[2] and Coupled[3]
     8 S[3]            5mils                       5     Spacing between Coupled[3] and Coupled[4]
     9 S[4]            5mils                       5     Spacing between Coupled[4] and Coupled[5]
END_ELEMENT

CPW       CPW        5
     1 Subst           CPWSub1                    -1     Substrate instance name
     2 W               25.0mils                    5     Center Conductor Width
     3 G               5.0mils                     5     Gap (Spacing) Between Center Conductor and Ground Planes
     4 L               100.0mils                   5     Center Conductor Length
     5 Temp            ''                         12     Physical temperature
END_ELEMENT

CPWCGAP   CPWCGAP    5
     1 Subst           CPWSub1                    -1     Substrate instance name
     2 W               25.0mils                    5     Center Conductor Width
     3 G               5.0mils                     5     Gap (Spacing) Between Center Conductor and Ground Planes
     4 S               5.2mils                     5     Length of Gap Between Ends of Center Conductors
     5 Temp            ''                         12     Physical temperature
END_ELEMENT

CPWCPL2   CPWCPL2    6
     1 Subst           CPWSub1                    -1     Substrate instance name
     2 W               25.0mils                    5     Center Conductor Width
     3 G               5.0mils                     5     Gap (Spacing) Between Center Conductors and Ground Planes
     4 S               10.0mils                    5     Gap Between the Two Center Conductors
     5 L               50.0mils                    5     Center Conductor Length
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

CPWCPL4   CPWCPL4    8
     1 Subst           CPWSub1                    -1     Substrate instance name
     2 W               25.0mils                    5     Width of Outer Center Conductors
     3 G               5.0mils                     5     Gap (Spacing) Between Center Conductors and Ground Planes
     4 S               5.0mils                     5     Gap Between Outer and Inner Center Conductors
     5 Wi              5.0mils                     5     Width of Inner Center Conductors
     6 Si              5.0mils                     5     Gap Between Inner Center Conductors
     7 L               50.0mils                    5     Center Conductor Length
     8 Temp            ''                         12     Physical temperature
END_ELEMENT

CPWEF     CPWEF      5
     1 Subst           CPWSub1                    -1     Substrate instance name
     2 W               25.0mils                    5     Center Conductor Width
     3 G               5.0mils                     5     Gap (Spacing) Between Center Conductor and Ground Planes
     4 L               100.0mils                   5     Center Conductor Length
     5 Temp            ''                         12     Physical temperature
END_ELEMENT

CPWEGAP   CPWEGAP    6
     1 Subst           CPWSub1                    -1     Substrate instance name
     2 W               25.0mils                    5     Center Conductor Width
     3 G               5.0mils                     5     Gap (Spacing) Between Center Conductor and Ground Planes
     4 S               5.2mils                     5     Gap Between End of Center Conductor and Ground Plane
     5 L               100.0mils                   5     Center Conductor Length
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

CPWG      CPWG       5
     1 Subst           CPWSub1                    -1     Substrate instance name
     2 W               25.0mils                    5     Center Conductor Width
     3 G               5.0mils                     5     Gap (Spacing) Between Center Conductor and Ground Planes
     4 L               100.0mils                   5     Center Conductor Length
     5 Temp            ''                         12     Physical temperature
END_ELEMENT

CPWOC     CPWOC      5
     1 Subst           CPWSub1                    -1     Substrate instance name
     2 W               25.0mils                    5     Center Conductor Width
     3 G               5.0mils                     5     Gap (Spacing) Between Center Conductor and Ground Planes
     4 L               100.0mils                   5     Center Conductor Length
     5 Temp            ''                         12     Physical temperature
END_ELEMENT

CPWSC     CPWSC      5
     1 Subst           CPWSub1                    -1     Substrate instance name
     2 W               25.0mils                    5     Center Conductor Width
     3 G               5.0mils                     5     Gap (Spacing) Between Center Conductor and Ground Planes
     4 L               100.0mils                   5     Center Conductor Length
     5 Temp            ''                         12     Physical temperature
END_ELEMENT

CPWSUB    CPWSUB     9
     1 H               25.0mils                    5     Substrate thickness
     2 Er              10.0                       -1     Relative dielectric constant
     3 Mur             1                          -1     Relative permeability
     4 Cond            1.0E+306                   -1     Conductor conductivity
     5 Hu              1.0E3m                      5     Cover height
     6 T               0m                          5     Conductor thickness
     7 TanD            0                          -1     Dielectric loss tangent
     8 Rough           0m                          5     Conductor surface roughness
     9 Cond1           smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

CQ_Conn   CQ_Conn    4
     1 C               1.0pF                       4     Capacitance
     2 Q               50.0                       -1     Quality factor
     3 F               100.0MHz                    0     Reference frequency for q
     4 Mode            loss_freq                  -1     Loss Mode for This Device
END_ELEMENT

CQ_Pad1   CQ_Pad1    7
     1 C               1.0pF                       4     Capacitance
     2 Q               50.0                       -1     Quality factor
     3 F               100.0MHz                    0     Reference frequency for q
     4 Mode            loss_freq                  -1     Loss Mode for This Device
     5 W               25.0mils                    5     W
     6 S               10.0mils                    5     S
     7 L1              50.0mils                    5     L
END_ELEMENT

CQ_Space  CQ_Space   5
     1 C               1.0pF                       4     Capacitance
     2 Q               50.0                       -1     Quality factor
     3 F               100.0MHz                    0     Reference frequency for q
     4 Mode            loss_freq                  -1     Loss Mode for This Device
     5 L1              50.0mils                    5     L
END_ELEMENT

C_Conn    C_Conn     1
     1 C               1.0pF                       4     Capacitance
END_ELEMENT

C_Model   C_Model   11
     1 C               1pF                         4     Capacitance
     2 Cj              ''                          4     Capacitance per area
     3 Cjsw            ''                          4     Capacitance per periphery
     4 Length          ''                          5     Length
     5 Width           ''                          5     Width
     6 Narrow          ''                          5     Length and width narrowing due to etching
     7 Tnom            ''                         12     Nominal temperature
     8 TC1             ''                         12     Temperature coefficient; per degree Celsius
     9 TC2             ''                         12     Temperature coefficient; per degree Celsius squared
    10 wBV             ''                          9     Breakdown voltage (warning)
    11 AllParams       ''                         -1     Data Access Component (DAC) Based Parameters
END_ELEMENT

C_Pad1    C_Pad1     4
     1 C               1.0pF                       4     Capacitance
     2 W               25.0mils                    5     W
     3 S               10.0mils                    5     S
     4 L1              50.0mils                    5     L
END_ELEMENT

C_Space   C_Space    2
     1 C               1.0pF                       4     Capacitance
     2 L1              50.0mils                    5     L
END_ELEMENT

CarrToIM  CarrToIM   1
     1 Function        list(our_ctm=carr_to_im(vout,{1,0},{2,-1})) -1     carr_to_im(vout,fund_freq,IM_freq)
END_ELEMENT

Chain     Chain     12
     1 A               ''                         -1     Reverse voltage gain.
     2 B               ''                          1     Reverse transresistance, Ohms 
     3 C               ''                          2     Reverse transconductance, Siemens
     4 D               ''                         -1     Reverse current gain
     5 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
     6 ImpMode         ''                         -1     Convolution mode
     7 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
     8 ImpDeltaFreq    ''                          0     Sample spacing in frequency
     9 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    10 ImpWindow       ''                         -1     Smoothing window
    11 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    12 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Circulator Circulator 15
     1 F1              ''                          0     first frequency break point
     2 F2              ''                          0     second frequency break point
     3 F3              ''                          0     third frequency break point
     4 Loss1           0.dB                       13     attenuation in dB for frequencies <=F1
     5 Loss2           0.dB                       13     attenuation in dB for F1<frequency<=F2
     6 Loss3           0.dB                       13     attenuation in dB for F2>frequency<=F3
     7 Loss4           0.dB                       13     attenuation in dB for frequencies >F3
     8 VSWR1           1.                         -1     VSWR at both ports for frequencies <=F1
     9 VSWR2           1.                         -1     VSWR at both ports for F1<frequency<=F2
    10 VSWR3           1.                         -1     VSWR at both ports for F2>frequency<=F3
    11 VSWR4           1.                         -1     VSWR at both ports for frequencies >F3
    12 Isolat          100.dB                     13     isolation in dB
    13 Z1              ''                          1     reference impedance for port1
    14 Z2              ''                          1     reference impedance for port2
    15 Z3              ''                          1     reference impedance for port3
END_ELEMENT

ClockLFSR ClockLFSR  5
     1 Vlow            0.25V                       9     Lower Threshold Voltage
     2 Vhigh           0.75V                       9     Upper Threshold Voltage
     3 Taps            bin("10000100")            -1     Bits Used to Generate Feedback
     4 Seed            bin("10101010")            -1     Initial Value Loaded into Shift Register
     5 Rout            1ohm                        1     Output Resistance
END_ELEMENT

CoaxTee   CoaxTee    3
     1 Z               50ohm                       1     Characteristic Impedance of Coaxial Line
     2 L               10mils                      5     Length of All Branches of the T-Junction
     3 K               2.1                        -1     Effective Dielectric Constant
END_ELEMENT

Comparator Comparator  2
     1 Vlow            0.25V                       9     Lower Threshold Voltage
     2 Vhigh           0.75V                       9     Upper Threshold Voltage
END_ELEMENT

Counter   Counter    2
     1 Direction       1                          -1     Direction One
     2 Thresh          0V                          9     Thresh One
END_ELEMENT

CouplerDual CouplerDual 21
     1 Coupling        10.dB                      13     coupling factor in dB
     2 F1              ''                          0     first frequency break point
     3 F2              ''                          0     second frequency break point
     4 F3              ''                          0     third frequency break point
     5 MVSWR1          1.                         -1     mainline VSWR for frequencies <=F1
     6 MVSWR2          1.                         -1     mainline VSWR for F1<frequency<=F2
     7 MVSWR3          1.                         -1     mainline VSWR for F2>frequency<=F3
     8 MVSWR4          1.                         -1     mainline VSWR for frequencies >F3
     9 CVSWR1          1.                         -1     coupled arm VSWR for frequencies <=F1
    10 CVSWR2          1.                         -1     coupled arm VSWR for F1<frequency<=F2
    11 CVSWR3          1.                         -1     coupled arm VSWR for F2>frequency<=F3
    12 CVSWR4          1.                         -1     coupled arm VSWR for frequencies >F3
    13 Loss1           0.dB                       13     attenuation in dB for frequencies <=F1
    14 Loss2           0.dB                       13     attenuation in dB for F1<frequency<=F2
    15 Loss3           0.dB                       13     attenuation in dB for F2>frequency<=F3
    16 Loss4           0.dB                       13     attenuation in dB for frequencies >F3
    17 Direct1         0.dB                       13     directivity in dB for frequencies <=F1
    18 Direct2         0.dB                       13     directivity in dB for F1<frequency<=F2
    19 Direct3         0.dB                       13     directivity in dB for F2>frequency<=F3
    20 Direct4         0.dB                       13     directivity in dB for frequencies >F3
    21 ZRef            50.ohm                      1     reference impedance for all ports
END_ELEMENT

CouplerSingle CouplerSingle 21
     1 Coupling        10.dB                      13     coupling factor in dB
     2 F1              ''                          0     first frequency break point
     3 F2              ''                          0     second frequency break point
     4 F3              ''                          0     third frequency break point
     5 MVSWR1          1.                         -1     mainline VSWR for frequencies <=F1
     6 MVSWR2          1.                         -1     mainline VSWR for F1<frequency<=F2
     7 MVSWR3          1.                         -1     mainline VSWR for F2>frequency<=F3
     8 MVSWR4          1.                         -1     mainline VSWR for frequencies >F3
     9 CVSWR1          1.                         -1     coupled arm VSWR for frequencies <=F1
    10 CVSWR2          1.                         -1     coupled arm VSWR for F1<frequency<=F2
    11 CVSWR3          1.                         -1     coupled arm VSWR for F2>frequency<=F3
    12 CVSWR4          1.                         -1     coupled arm VSWR for frequencies >F3
    13 Loss1           0.dB                       13     attenuation in dB for frequencies <=F1
    14 Loss2           0.dB                       13     attenuation in dB for F1<frequency<=F2
    15 Loss3           0.dB                       13     attenuation in dB for F2>frequency<=F3
    16 Loss4           0.dB                       13     attenuation in dB for frequencies >F3
    17 Direct1         0.dB                       13     directivity in dB for frequencies <=F1
    18 Direct2         0.dB                       13     directivity in dB for F1<frequency<=F2
    19 Direct3         0.dB                       13     directivity in dB for F2>frequency<=F3
    20 Direct4         0.dB                       13     directivity in dB for frequencies >F3
    21 ZRef            50.ohm                      1     reference impedance for all ports
END_ELEMENT

Curtice2_Model Curtice2_Model 53
     1 NFET            y_n1                       -1     Model Type - YES or NO
     2 PFET            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          1                          -1     1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
     4 Vto             ''                          9     Threshold voltage, V
     5 Beta            ''                         -1     Transconductance parameter, A/V^2
     6 Lambda          ''                         -1     Channel length modulation parameter, 1/V
     7 Alpha           ''                         -1     Hyperbolic tangent function parameter, 1/V
     8 Tau             ''                          6     Transit time under gate, S
     9 Tnom            ''                         12     Nominal ambient temperature, Celsius
    10 Idstc           ''                         -1     Ids temperature coefficient
    11 Vtotc           ''                         -1     VTO Temperature Coefficient, V/Degree C
    12 Betatce         ''                         -1     BETA Exponential Temperature Coefficient, %/Degree C
    13 Rin             ''                          1     G-S resistance, Ohm
    14 Rf              ''                          1     G-S effective forward-bias resistance (0. means infinity), Ohm
    15 Gscap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    16 Cgs             ''                          4     Zero-bias G-S junction cap., F
    17 Cgd             ''                          4     Zero-bias G-D junction cap., F
    18 Gdcap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    19 Fc              ''                         -1     Coefficient for forward-bias depletion cap.
    20 Rd              ''                          1     Drain ohmic resistance, Ohm
    21 Rg              ''                          1     Gate resistance, Ohm
    22 Rs              ''                          1     Source ohmic resistance, Ohm
    23 Ld              ''                          3     Drain inductance, H
    24 Lg              ''                          3     Gate inductance, H
    25 Ls              ''                          3     Source inductance, H
    26 Cds             ''                          4     Drain-source cap., F
    27 Rc              ''                          1     Used with CRF to model freq. dependent output conductance (0. means infinity), Ohm
    28 Crf             ''                          4     Used with RC to model freq. dependent output conductance, F
    29 Gsfwd           ''                         -1     0=none 1=linear 2=diode
    30 Gsrev           ''                         -1     0=none 1=linear 2=diode
    31 Gdfwd           ''                         -1     0=none 1=linear 2=diode
    32 Gdrev           ''                         -1     0=none 1=linear 2=diode
    33 R1              ''                          1     Approximate breakdown resistance (0. Means Infinity), Ohm
    34 R2              ''                          1     Resistance relating breakdown voltage to channel, Ohm
    35 Vbi             ''                          9     Built-in gate potential, V
    36 Vbr             ''                          9     Gate junction reverse bias breakdown voltage (0. Means Infinity), V
    37 Is              ''                         10     Gate junction saturation current, A
    38 Ir              ''                         10     Gate rev saturation current, A
    39 Imax            ''                         10     Explosion current, A
    40 Xti             ''                         -1     Saturation Current Temperature Exponent
    41 Eg              ''                         -1     Energy Gap for Temperature Effect on IS
    42 N               ''                         -1     Gate junction emission coefficient
    43 Fnc             ''                          0     Flicker noise corner frequency
    44 R               ''                         -1     Gate noise coefficient
    45 P               ''                         -1     Drain noise coefficient
    46 C               ''                         -1     Gate-drain noise correlation coefficient.
    47 Taumdl          y_n0                       -1     Use 2nd order Bessel polynomial to model tau effect in transient
    48 wVgfwd          ''                          9     Gate junction forward bias (warning), V
    49 wBvgs           ''                          9     Gate-source reverse breakdown voltage (warning), V
    50 wBvgd           ''                          9     Gate-drain reverse breakdown voltage (warning), V
    51 wBvds           ''                          9     Drain-source breakdown voltage (warning), V
    52 wIdsmax         ''                         10     Maximum drain-source current (warning), A
    53 wPmax           ''                          8     Maximum power dissipation (warning), W
END_ELEMENT

Curtice3_Model Curtice3_Model 59
     1 NFET            y_n1                       -1     Model Type - YES or NO
     2 PFET            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          2                          -1     1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
     4 Vto             ''                          9     Value of V1 below which Ids = Ids(V1=VTO,Vds), V
     5 Beta            ''                         -2     Coefficient for pinch-off change with respect to VDS, 1/V
     6 Rds0            ''                          1     DC conductance at Vgs=0
     7 Vout0           ''                          9     Output voltage at which A0, A1, A2, A3 were evaluated, V
     8 Vdsdc           ''                          9     Vds at `rds0 meaured bias
     9 Tau             ''                          6     Transit time under gate, S
    10 Gamma           ''                         -1     Current saturation parameter, 1/V
    11 Tnom            ''                         12     Nominal ambient temperature, Celsius
    12 Idstc           ''                         -1     Ids temperature coefficient
    13 A0              ''                         -1     Cubic polynomial IDS Equation Coefficient, A
    14 A1              ''                         -1     Cubic polynomial IDS Equation Coefficient, A/V
    15 A2              ''                         -1     Cubic polynomial IDS Equation Coefficient, A/V^2
    16 A3              ''                         -1     Cubic polynomial IDS Equation Coefficient, A/V^3
    17 Vtotc           ''                         -1     VTO Temperature Coefficient, V/Degree C
    18 Betatce         ''                         -1     BETA Exponential Temperature Coefficient, %/Degree C
    19 Rin             ''                          1     Channel resistance, Ohm
    20 Rf              ''                          1     G-S effective forward-bias resistance (0. means infinity), Ohm
    21 Fc              ''                         -1     Coefficient for forward-bias depletion cap.
    22 Gscap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    23 Cgs             ''                          4     Zero-bias G-S junction cap., F
    24 Cgd             ''                          4     Zero-bias G-D junction cap., F
    25 Gdcap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    26 Rd              ''                          1     Drain ohmic resistance, Ohm
    27 Rg              ''                          1     Gate resistance, Ohm
    28 Rs              ''                          1     Source ohmic resistance, Ohm
    29 Ld              ''                          3     Drain inductance, H
    30 Lg              ''                          3     Gate inductance, H
    31 Ls              ''                          3     Source inductance, H
    32 Cds             ''                          4     Drain-source cap., F
    33 Crf             ''                          4     Used with RDS to model freq. dependent output conductance, F
    34 Rds             ''                          1     Additional output resistance for RF operation (0. means infinity), Ohm
    35 Gsfwd           ''                         -1     0=none 1=linear 2=diode
    36 Gsrev           ''                         -1     0=none 1=linear 2=diode
    37 Gdfwd           ''                         -1     0=none 1=linear 2=diode
    38 Gdrev           ''                         -1     0=none 1=linear 2=diode
    39 R1              ''                          1     Approximate breakdown resistance (0. means infinity), Ohm
    40 R2              ''                          1     Resistance relating breakdown voltage to channel currents, Ohm
    41 Vbi             ''                          9     Built-in gate potential, V
    42 Vbr             ''                          9     Gate junction reverse bias breakdown voltage (0. Means Infinity), V
    43 Is              ''                         10     Gate junction saturation current, A
    44 Ir              ''                         10     Gate rev saturation current, A
    45 Xti             ''                         -1     Saturation Current Temperature Exponent
    46 Eg              ''                         -1     Energy Gap for Temperature Effect on IS
    47 N               ''                         -1     Gate Junction emission coefficient
    48 Imax            ''                         10     Explosion current, A
    49 Taumdl          y_n0                       -1     Use 2nd order Bessel polynomial to model tau effect in transient
    50 Fnc             ''                          0     Flicker noise corner frequency
    51 R               ''                         -1     Gate noise coefficient
    52 P               ''                         -1     Drain noise coefficient
    53 C               ''                         -1     Gate-drain noise correlation coefficient.
    54 wVgfwd          ''                          9     Gate junction forward bias (warning), V
    55 wBvgs           ''                          9     Gate-source reverse breakdown voltage (warning), V
    56 wBvgd           ''                          9     Gate-drain reverse breakdown voltage (warning), V
    57 wBvds           ''                          9     Drain-source breakdown voltage (warning), V
    58 wIdsmax         ''                         10     Maximum drain-source current (warning), A
    59 wPmax           ''                          8     Maximum power dissipation (warning), W
END_ELEMENT

DC        DC        32
     1 SweepVar        ''                         -2     Name of variable or parameter to be swept
     2 UseSweepPlan    ''                         -1     Flag to indicate use of SweepPlan
     3 SweepPlan       ''                         -1     SweepPlan instance path name for sweep values
     4 Start           1                          -1     Start value
     5 Stop            10                         -1     Stop value
     6 Step            1                          -1     Step value
     7 Center          ''                         -1     Center value 
     8 Span            ''                         -1     Span
     9 Lin             ''                         -1     Linear sweep 
    10 Dec             ''                         -1     Number of points per decade
    11 Log             ''                         -1     Log sweep
    12 Reverse         ''                         -1     Reverse sweep
    13 Pt              ''                         -1     Single point value
    14 Sort            'LINEAR START STEP'        -1     Sort values
    15 MaxDeltaV       0.0V                        9     Max change in node voltage allowed per iteration
    16 MaxIters        250                        -1     Max number of iterations
    17 ConvMode        0                          -1     Convergence algorithm selection
    18 NestLevel       2                          -1     Levels of subcircuits to output
    19 StatusLevel     2                          -1     Degree of annotation
    20 DevOpPtLevel    DeviceOpNone               -1     Levels of DC Operating Point Data to output
    21 UseFiniteDiff   no                         -1     Use finite differences for sensitivities
    22 ArcMaxStep      0.0                        -1     Maximum arc-length step
    23 ArcLevelMaxStep 0.0                        -1     Maximum arc-length step for source-level continuation
    24 ArcMinValue     ''                         -1     Minimum value for parameter during arclength continuation
    25 ArcMaxValue     ''                         -1     Maximum value for parameter during arclength continuation
    26 MaxStepRatio    100                        -1     Ratio of maximum to given number of steps
    27 MaxShrinkage    1e-5                       -1     Maximum step shrinkage
    28 LimitingMode    0                          -1     Select limiting mode
    29 OutputAllSolns  ''                         -1     Output solution at all internal steps when sweeping
    30 PrintOpPoint    no                         -1     Print operating point
    31 Restart         1                          -1     Do not use previous solution as initial guess
    32 Other           ''                         -1     Output string to netlist
END_ELEMENT

DC_Block  DC_Block   5
     1 Mode            1                          -1     Mode: 0 => short, >0 => DC block, <0 => DC feed
     2 C               ''                          4     DC block capacitance (transient only)
     3 L               ''                          3     DC feed inductance(transient only)
     4 Gain            ''                         -1     Current gain
     5 wImax           ''                         10     Maximum current (warning)
END_ELEMENT

DC_Feed   DC_Feed    5
     1 Mode            -1                         -1     Mode: 0 => short, >0 => DC block, <0 => DC feed
     2 C               ''                          4     DC block capacitance (transient only)
     3 L               ''                          3     DC feed inductance(transient only)
     4 Gain            ''                         -1     Current gain
     5 wImax           ''                         10     Maximum current (warning)
END_ELEMENT

DCtoRF    DCtoRF     1
     1 Function        list(our_dcrf=dc_to_rf(vout,0,vdc,0,I_Probe1.i,I_Probe2.i,{1})) -1     dc_to_rf(vPlusRF,vMinusRF,vPlusDC,vMinusDC,currentRF,currentDC,rfFreq)
END_ELEMENT

DFET      DFET      30
     1 Gm1             20.0uS                      2     DC transconductance at Gate 1
     2 T1              1.0nsec                     6     Time delay of Gm1
     3 F1              1.0GHz                      0     -3dB frequency for Gm1
     4 Cgs1            10.0pF                      4     Gate 1 to source capacitance
     5 Ri1             0.1ohm                      1     Input resistance of gate 1
     6 Cdg1            10.0pF                      4     Drain to gate 1 capacitance
     7 Cds1            10.0pF                      4     Drain to source capacitance-gate 1
     8 Rds1            500.0ohm                    1     Drain to source resistance-gate 1
     9 Rg1             0.1ohm                      1     Gate 1 resistance
    10 Lg1             10.0nH                      3     Gate 1 inductance
    11 Gm2             20.0uS                      2     DC transconductance at Gate 2
    12 T2              1.0nsec                     6     Time delay of Gm2
    13 F2              1.0GHz                      0     -3dB frequency for Gm2
    14 Cgs2            10.0pF                      4     Gate 2 to source capacitance
    15 Ri2             0.1ohm                      1     Input resistance of gate 2
    16 Cdg2            10.0pF                      4     Drain to gate 2 capacitance
    17 Cds2            10.0pF                      4     Drain to source capacitance-gate 2
    18 Rds2            500.0ohm                    1     Drain to source resistance-gate 2
    19 Rg2             0.1ohm                      1     Gate 2 resistance
    20 Lg2             10.0nH                      3     Gate 2 inductance
    21 Rd              25.0uohm                    1     Drain resistance
    22 Ld              1.0nH                       3     Drain inductance
    23 Rs              1.0ohm                      1     Source resistance
    24 Ls              10.0nH                      3     Source inductance
    25 Cg1s            10.0pF                      4     Gate 1 to source capacitance
    26 Cg12            5.0pF                       4     Gate 1 to gate 2 capacitance
    27 Cg1d            10.0pF                      4     Gate 1 to drain capacitance
    28 Cg2d            1.0pF                       4     Gate 2 to drain capacitance-gate 2
    29 Cds             1.0pF                       4     Drain to source capacitance
    30 R12             1.0ohm                      1     Resistance between drain 1 and source 2
END_ELEMENT

DICAP     DICAP      6
     1 W               25.0mils                    5     Width of metal plates and dielectric
     2 L               25.0mils                    5     Length of metal plates and dielectric
     3 T               4.0mils                     5     Thickness of dielectric
     4 Er              2.50                       -1     Dielectric constant
     5 TanDeL          0.001                      -1     Dielectric loss tagent value at 1 MHz
     6 R0              0.01ohm                     1     Series resistance at 1 GHz
END_ELEMENT

DILABMLC  DILABMLC   6
     1 C0              1.0pF                       4     Nominal Capacitance
     2 TanDeL          0.001                      -1     Dielectric loss tagent value at 1 MHz
     3 R0              0.01ohm                     1     Bulk resistivity of termination at 1 MHz
     4 Rt              0.01ohm                     1     Termination loss resistance at 1 MHz
     5 Re              0.01ohm                     1     Electrode loss resistance at 1 GHz
     6 Mount           1.0                        -1     Mounting orientation: flat or edge
END_ELEMENT

DPDT_Static DPDT_Static 14
     1 State           1                          -1     =0 (nodes 1 and 2, 4 and 5 connected), =1 (node 1 and 3, 4 and 6 connected)
     2 F1              ''                          0     first frequency break point
     3 F2              ''                          0     second frequency break point
     4 F3              ''                          0     third frequency break point
     5 Loss1           0.dB                       13     attenuation in dB for frequencies <=F1
     6 Loss2           0.dB                       13     attenuation in dB for F1<frequency<=F2
     7 Loss3           0.dB                       13     attenuation in dB for F2>frequency<=F3
     8 Loss4           0.dB                       13     attenuation in dB for frequencies >F3
     9 VSWR1           1.                         -1     VSWR at both ports for frequencies <=F1
    10 VSWR2           1.                         -1     VSWR at both ports for F1<frequency<=F2
    11 VSWR3           1.                         -1     VSWR at both ports for F2>frequency<=F3
    12 VSWR4           1.                         -1     VSWR at both ports for frequencies >F3
    13 Isolat          100.dB                     13     isolation in dB
    14 ZRef            50.ohm                      1     reference impedance for all ports
END_ELEMENT

Deembed1  Deembed1   5
     1 File            ''                         -1     File Name
     2 Type            Type1                      -1     File Type
     3 InterpMode      Mode0                      -1     Interpolation Mode
     4 InterpDom       ID0                        -1     Interpolation Domain
     5 Temp            ''                         12     Temperature
END_ELEMENT

Deembed2  Deembed2   5
     1 File            ''                         -1     File Name
     2 Type            Type1                      -1     File Type
     3 InterpMode      Mode0                      -1     Interpolation Mode
     4 InterpDom       ID0                        -1     Interpolation Domain
     5 Temp            ''                         12     Temperature
END_ELEMENT

DevLinPhase DevLinPhase  1
     1 Function        list(our_dlp=dev_lin_phase(volt_gain(S21,PortZ1,PortZ2))) -1     dev_lin_phase( complex_gain_vector )
END_ELEMENT

Differentiator Differentiator  2
     1 Gain            1.                         -1     differentiator slope
     2 Rref            50.ohm                      1     reference resistance for both ports
END_ELEMENT

Diode     Diode      5
     1 Model           DIODEM1                    -1     Model instance name
     2 Area            ''                         -1     Scaling Factor
     3 Region          ''                         -1     DC operating region, 0=off, 1=on
     4 Temp            ''                         12     Device operating temperature
     5 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

Diode_Model Diode_Model 25
     1 Is              ''                         10     Saturation Current, A
     2 Rs              ''                          1     Ohmic Resistance, Ohm
     3 N               ''                         -1     Emission Coefficient
     4 Tt              ''                          6     Transit Time, S
     5 Cjo             ''                          4     Zero-bias Junction Cap., F
     6 Vj              ''                          9     Junction Potential, V
     7 M               ''                         -1     Grading Coefficient
     8 Eg              ''                         -1     Energy Gap, eV
     9 Imax            ''                         10     Explosion current, A
    10 Xti             ''                         -1     Saturation-current Temperature Exponent
    11 Kf              ''                         -1     Flicker Noise Coefficient
    12 Af              ''                         -1     Flicker Noise Exponent
    13 Fc              ''                         -1     Forward-bias Depletion Cap. Coefficient
    14 Bv              ''                          9     Reverse Breakdown Voltage (0. Means Infinity), V
    15 Ibv             ''                         10     Current At Reverse Breakdown Voltage, A
    16 Isr             ''                         10     Recombination Current Parameter, A
    17 Nr              ''                         -1     Emission Coefficient For ISR
    18 Ikf             ''                         10     High-Injection Knee Current (0. Means Infinity), A
    19 Nbv             ''                         -1     Reverse Breakdown Ideality Factor
    20 Ibvl            ''                         10     Low-Level Reverse Breakdown Knee Current, A
    21 Nbvl            ''                         -1     Low-Level Reverse Breakdown Ideality Factor
    22 Tnom            ''                         12     Nominal ambient temperature, Celsius
    23 Ffe             ''                         -1     Flicker noise frequency exponent
    24 wBv             ''                          9     Diode reverse breakdown voltage (warning), V
    25 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

DivideByN DivideByN  2
     1 FnomIn          1.0KHz                      0     Nominal Input Frequency
     2 N               11                         -1     Divide Number
END_ELEMENT

EE_BJT2_Model EE_BJT2_Model 41
     1 Type            One                        -1     Model Type - 1 or 2
     2 Nf              ''                         -1     Forward Current Emission Coefficient
     3 Ne              ''                         -1     B-E Leakage Emission Coefficient
     4 Nbf             ''                         -1     EEBJT2 reverse base ideality factor
     5 Vaf             ''                          9     Forward Early Voltage (0. Means Infinity), V
     6 Ise             ''                         10     B-E Leakage Saturation Current, A
     7 Tf              ''                          6     Ideal Forward Transit Time, S
     8 Ikf             ''                         10     Corner for Forward Beta High Current Roll-off (0. Means Infinity), A
     9 Xtf             ''                         -1     Coefficient of Bias Dependence for TF
    10 Vtf             ''                          9     Voltage Dependence of TF on B-C Voltage (0. Means Infinity), V
    11 Itf             ''                         10     Parameter for High Current Effect on TF, A
    12 Nbr             ''                         10     EEBJT2 reverse base ideality factor
    13 Nr              ''                         -1     Reverse Current Emission Coefficient
    14 Nc              ''                         -1     B-C Leakage Emission Coefficient
    15 Isc             ''                         10     B-C Leakage Saturation Current, A
    16 Ikr             ''                         10     Corner for Reverse Beta High Current Roll-off (0. Means Infinity), A
    17 Var             ''                          9     Reverse Early Voltage (0. Means Infinity), V
    18 Tr              ''                          6     Ideal Reverse Transit Time, S
    19 Isf             ''                         10     Forward saturation current for EEBJT2, A
    20 Ibif            ''                         10     Fwd base saturation current for EEBJT2, A
    21 Isr             ''                         10     Reverse saturation current for EEBJT2, A
    22 Ibir            ''                         10     Rev base saturation current for EEBJT2, A
    23 Tamb            ''                         12     EEBJT2 extraction temperature, Celsius
    24 Cje             ''                          4     B-E Zero-bias Depletion Cap., F
    25 Vje             ''                          9     B-E Junction Built-in Potential, V
    26 Mje             ''                         -1     B-E Junction Exponential Factor
    27 Cjc             ''                          4     B-C Zero-bias Depletion Cap., F
    28 Vjc             ''                          9     B-C Junction Built-in Potential, V
    29 Mjc             ''                         -1     B-C Junction Exponential Factor
    30 Rb              ''                          1     Zero-bias Base Resistance, Ohm
    31 Re              ''                          1     Emitter Resistance, Ohm
    32 Rc              ''                          1     Collector Resistance, Ohm
    33 Fc              ''                         -1     Forward-bias Depletion Cap. Coefficient
    34 wVsubfwd        ''                          9     Substrate Junction Forward Bias (warning), V
    35 wBvsub          ''                          9     Substrate Junction Reverse Breakdown Voltage (warning), V
    36 wBvbe           ''                          9     Base-Emitter Reverse Breakdown Voltage (warning), V
    37 wBvbc           ''                          9     Base-Collector Reverse Breakdown Voltage (warning), V
    38 wVbcfwd         ''                          9     Base-Collector Forward Bias (warning), V
    39 wIbmax          ''                         10     Maximum Base Current (warning), A
    40 wIcmax          ''                         10     Maximum Collector Current (warning), A
    41 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

EE_FET3   EE_FET3    3
     1 Model           EEFET3M1                   -1     Model instance name
     2 Ugw             ''                          5     Unit gate width of device
     3 N               ''                         -1     Number of Gate fingers
END_ELEMENT

EE_FET3_Model EE_FET3_Model 61
     1 Vto             ''                          9     Zero-bias threshold parameter
     2 Gamma           ''                         -1     Transconductance parameter, 1/V
     3 Vgo             ''                          9     Gate-source voltage where transconductance is a maximum, V
     4 Vdelt           ''                          9     Parameter which controls linearization point, V
     5 Vch             ''                          9     Gate-source voltage where Gamma no longer effects I-V,V
     6 Gmmax           ''                          3     Peak transconductance parameter, S
     7 Vdso            ''                          9     Drain voltage where Vo dependence is nominal, V
     8 Vsat            ''                          9     Drain-source current saturation parameter, V
     9 Kapa            ''                          2     Output conductance parameter, S
    10 Peff            ''                         -1     Channel to backside self-heating parameter, W
    11 Vtso            ''                          9     Subthreshold onset voltage, V
    12 Is              ''                         10     Gate junction reverse saturation current, A
    13 N               ''                         -1     Junction ideality factor, demensionless
    14 Ris             ''                          1     Source end channel resistance, Ohms
    15 Rid             ''                          1     Drain end channel resistance, Ohms
    16 Tau             ''                          6     Gate transit time delay, T
    17 Cdso            ''                          4     Drain source inter-electrode capacitance, F
    18 Rdb             ''                          1     Dispersion source output impedence, Ohms
    19 Cbs             ''                          4     Trapping-state capacitance, C
    20 Vtoac           ''                          9     Zero-bias threshold parameter, V
    21 Gammaac         ''                         -1     Transconductance parameter (AC), 1/V
    22 Vdeltac         ''                          9     Parameter which controls linearization point (AC), V
    23 Gmmaxac         ''                         -1     Peak transconductance parameter (AC), S
    24 Kapaac          ''                          2     Output conductance parameter (AC), S
    25 Peffac          ''                         -1     Channel to backside self-heating parameter (AC), W
    26 Vtsoac          ''                          9     Subthreshold onset voltage(AC), V
    27 Gdbm            ''                          4     Additional d-b branch conductance at Vds = VDSM, 
    28 Kdb             ''                         -1     Dependence of d-b branch conductance with Vds
    29 Vdsm            ''                          9     Voltage where D-B branch conductance becomes constant
    30 C11o            ''                          4     Maximum input capacitance for VDS=VDSO>DELTDS, F
    31 C11th           ''                          4     Minimum (threshold) input capacitance for Vds=VDSO, F
    32 Vinfl           ''                          9     Inflection point in C11-Vgs characteristic, V
    33 Deltgs          ''                          9     C11TH to C11O transition voltage, V
    34 Deltds          ''                          9     Linear to saturation region transition parameter, V
    35 Lambda          ''                         -1     C11-Vds characteristic slope parameter, 1/V
    36 C12sat          ''                          4     Input transcapacitance for Vgs=VINFL and Vds>DELTDS, F
    37 Cgdsat          ''                          4     Gate drain capacitance for Vds>DELTDS, F
    38 Kbk             ''                         -1     Breakdown current coefficient at threshold
    39 Vbr             ''                          9     Breakdown onset voltage, V
    40 Nbr             ''                         -1     Breakdown current exponent parameter
    41 Idsoc           ''                         10     Open channel (maximum) value of Ids, A
    42 Rd              ''                          1     Drain contact resistance, Ohms
    43 Rs              ''                          1     Source contact resistance, Ohms
    44 Rg              ''                          1     Gate metalization resistance, Ohms
    45 Ugw             ''                          5     Unit gate width of device
    46 Ngf             ''                         -1     Number of device gate fingers
    47 Vco             ''                          9     Voltage where transconductance compression begins, V
    48 Vba             ''                          9     Transconductance compression tail-off parameter, V
    49 Vbc             ''                          9     Transconductance roll-off to tail-off voltage, V
    50 Mu              ''                         -1     Vo dependent transconductance compression parameter
    51 Deltgm          ''                         -1     Slope of transconductance compression characteristic 
    52 Deltgmac        ''                         -1     Slope of transconductance compression characteristic (AC) 
    53 Alpha           ''                          9     Transconductance saturation to compression transition, V
    54 Kmod            ''                         -1     Library model numbe
    55 Kver            ''                         -1     Version number
    56 wVgfwd          ''                          9     Gate junction forward bias (warning), V
    57 wBvgs           ''                          9     Gate-source reverse breakdown voltage (warning), V
    58 wBvgd           ''                          9     Gate-drain reverse breakdown voltage (warning), V
    59 wBvds           ''                          9     Drain-source breakdown voltage (warning), V
    60 wIdsmax         ''                         10     Maximum drain-source current (warning), A
    61 wPmax           ''                          8     Maximum power dissipation (warning), W
END_ELEMENT

EE_HEMT1  EE_HEMT1   3
     1 Model           EEHEMTM1                   -1     Model instance name
     2 Ugw             ''                          5     Unit gate width of device
     3 N               ''                         -1     Number of Gate fingers
END_ELEMENT

EE_HEMT1_Model EE_HEMT1_Model 61
     1 Vto             ''                          9     Zero-bias threshold parameter
     2 Gamma           ''                         -1     Transconductance parameter, 1/V
     3 Vgo             ''                          9     Gate-source voltage where transconductance is a maximum, V
     4 Vdelt           ''                          9     Parameter which controls linearization point, V
     5 Vch             ''                          9     Gate-source voltage where Gamma no longer effects I-V,V
     6 Gmmax           ''                          3     Peak transconductance parameter, S
     7 Vdso            ''                          9     Drain voltage where Vo dependence is nominal, V
     8 Vsat            ''                          9     Drain-source current saturation parameter, V
     9 Kapa            ''                          2     Output conductance parameter, S
    10 Peff            ''                         -1     Channel to backside self-heating parameter, W
    11 Vtso            ''                          9     Subthreshold onset voltage, V
    12 Is              ''                         10     Gate junction reverse saturation current, A
    13 N               ''                         -1     Junction ideality factor, demensionless
    14 Ris             ''                          1     Source end channel resistance, Ohms
    15 Rid             ''                          1     Drain end channel resistance, Ohms
    16 Tau             ''                          6     Gate transit time delay, T
    17 Cdso            ''                          4     Drain source inter-electrode capacitance, F
    18 Rdb             ''                          1     Dispersion source output impedence, Ohms
    19 Cbs             ''                          4     Trapping-state capacitance, C
    20 Vtoac           ''                          9     Zero-bias threshold parameter, V
    21 Gammaac         ''                         -1     Transconductance parameter (AC), 1/V
    22 Vdeltac         ''                          9     Parameter which controls linearization point (AC), V
    23 Gmmaxac         ''                         -1     Peak transconductance parameter (AC), S
    24 Kapaac          ''                          2     Output conductance parameter (AC), S
    25 Peffac          ''                         -1     Channel to backside self-heating parameter (AC), W
    26 Vtsoac          ''                          9     Subthreshold onset voltage(AC), V
    27 Gdbm            ''                          4     Additional d-b branch conductance at Vds = VDSM, 
    28 Kdb             ''                         -1     Dependence of d-b branch conductance with Vds
    29 Vdsm            ''                          9     Voltage where D-B branch conductance becomes constant
    30 C11o            ''                          4     Maximum input capacitance for VDS=VDSO>DELTDS, F
    31 C11th           ''                          4     Minimum (threshold) input capacitance for Vds=VDSO, F
    32 Vinfl           ''                          9     Inflection point in C11-Vgs characteristic, V
    33 Deltgs          ''                          9     C11TH to C11O transition voltage, V
    34 Deltds          ''                          9     Linear to saturation region transition parameter, V
    35 Lambda          ''                         -1     C11-Vds characteristic slope parameter, 1/V
    36 C12sat          ''                          4     Input transcapacitance for Vgs=VINFL and Vds>DELTDS, F
    37 Cgdsat          ''                          4     Gate drain capacitance for Vds>DELTDS, F
    38 Kbk             ''                         -1     Breakdown current coefficient at threshold
    39 Vbr             ''                          9     Breakdown onset voltage, V
    40 Nbr             ''                         -1     Breakdown current exponent parameter
    41 Idsoc           ''                         10     Open channel (maximum) value of Ids, A
    42 Rd              ''                          1     Drain contact resistance, Ohms
    43 Rs              ''                          1     Source contact resistance, Ohms
    44 Rg              ''                          1     Gate metalization resistance, Ohms
    45 Ugw             ''                          5     Unit gate width of device
    46 Ngf             ''                         -1     Number of device gate fingers
    47 Vco             ''                          9     Voltage where transconductance compression begins, V
    48 Vba             ''                          9     Transconductance compression tail-off parameter, V
    49 Vbc             ''                          9     Transconductance roll-off to tail-off voltage, V
    50 Mu              ''                         -1     Vo dependent transconductance compression parameter
    51 Deltgm          ''                         -1     Slope of transconductance compression characteristic 
    52 Deltgmac        ''                         -1     Slope of transconductance compression characteristic (AC) 
    53 Alpha           ''                          9     Transconductance saturation to compression transition, V
    54 Kmod            ''                         -1     Library model numbe
    55 Kver            ''                         -1     Version number
    56 wVgfwd          ''                          9     Gate junction forward bias (warning), V
    57 wBvgs           ''                          9     Gate-source reverse breakdown voltage (warning), V
    58 wBvgd           ''                          9     Gate-drain reverse breakdown voltage (warning), V
    59 wBvds           ''                          9     Drain-source breakdown voltage (warning), V
    60 wIdsmax         ''                         10     Maximum drain-source current (warning), A
    61 wPmax           ''                          8     Maximum power dissipation (warning), W
END_ELEMENT

EE_MOS1   EE_MOS1    2
     1 Model           EEMOSM1                    -1     Model instance name
     2 Temp            ''                         12     Device operating temperature
END_ELEMENT

EE_MOS1P  EE_MOS1P   2
     1 Model           EEMOS1M1                   -1     Model instance name
     2 Temp            ''                         12     Device operating temperature
END_ELEMENT

EE_MOS1_Model EE_MOS1_Model 43
     1 Is              ''                         10     Substrate diode reverse saturation current, A
     2 N               ''                         -1     Substrate diode ideality factor, dimensionless
     3 F               ''                         -1     Zero-bias substrate diode depletion capacitance, F
     4 Vbi             ''                          9     Substrate diode built-in potential, V
     5 Mj              ''                         -1     Junction  grading coefficient, dimensionless
     6 Fc              ''                         -1     Substrate depletion capacitance linearization point, dimensionless
     7 Vbr             ''                          9     Breakdown onset voltage, V
     8 Kbo             ''                         -1     Breakdown current coefficient, dimensionless
     9 Nbr             ''                         -1     Breakdown current exponent parameter
    10 Vinfl           ''                          9     Inflection point in Cgs-Vgs characteristic, V
    11 Deltds          ''                          9     Capacitance forward to reverse mode transition parameter, V
    12 Deltgs          ''                          9     Cgsth to Cgso transition voltage, V
    13 Cgsmax          ''                          4     Maximum value of Cgs, F
    14 Vgo             ''                          9     Gate-source voltage where transconductance is a maximum, V
    15 Vto             ''                          9     Zero-bias threshold parameter
    16 Gamma           ''                         -1     Drain-source dependent threshold parameter, 1/V
    17 Gmmax           ''                          3     Peak transconductance parameter, S
    18 Delta           ''                          9     Transconductance tail-off rate parameter, V
    19 Vbreak          ''                          9     Voltage where transconductance tail-off begins, V
    20 Lambda          ''                         -1     Output conductance parameter, 1/V
    21 Vsatm           ''                          9     Maximum value of saturation voltage, V
    22 Vgm             ''                          9     Gate-source volatge where saturation voltage is VSATM, V
    23 Rdb             ''                          1     Dispersion source output impedence, Ohms
    24 Cbs             ''                          4     Dispersion source capacitance
    25 Gmmaxac         ''                          3     AC value of GMMAX, S
    26 Deltac          ''                          9     AC value of DELT, V
    27 Vbreakac        ''                          9     AC value of VBREAK, V
    28 Vgoac           ''                          9     AC value of VGO, V
    29 Lambdaac        ''                         -1     AC value of LAMBDA, 1/V
    30 Vsatmac         ''                          9     AC value of VSATM, V
    31 Vgmac           ''                          9     AC value of VGM, V
    32 Gdbm            ''                         -1     Additional d-b branch conductance at Vds=VDSM
    33 Kdb             ''                         -1     Parameter which controls Vds dependence of D-B branch conductance
    34 Vdsm            ''                          9     Voltage where D-B branch conductance becomes constant
    35 Rd              ''                          1     Drain contact resistance, Ohms
    36 Rs              ''                          1     Source contact resistance, Ohms
    37 Rg              ''                          1     Gate metalization resistance, Ohms
    38 Ris             ''                          1     Source end channel resistance, Ohms
    39 Rid             ''                          1     Drain end channel resistance, Ohms
    40 wBvg            ''                          9     Gate Oxide Breakdown Voltage (warning), V
    41 wBvds           ''                          9     Drain-Source Breakdown Voltage (warning), V
    42 wIdsmax         ''                         10     Maximum Drain-Source Current (warning), A
    43 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

EE_TOM    EE_TOM     5
     1 Model           EETOM1                     -1     Model instance name
     2 W               ''                          5     New Unit Gate Width
     3 N               ''                         -1     New Number of Gate Fingers
     4 Temp            ''                         12     Operating Temperature
     5 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

Envelope  Envelope  48
     1 MaxOrder        4                          -1     Maximum combined order to be considered
     2 Freq            1.0GHz                      0     Frequency of fundamental
     3 Order           3                          -1     Maximum order of fundamental to be considered
     4 NestLevel       2                          -1     Levels of subcircuits to output
     5 StatusLevel     3                          -1     Degree of annotation
     6 FundOversample  2                          -1     Oversampling ratio for FFT
     7 Oversample      ''                         -1     Oversampling ratio for FFT (repeated)
     8 PackFFT         ''                         -1     Pack FFT in multi-tone analysis
     9 MaxIters        10                         -1     Max number of iterations
    10 GuardThresh     ''                         -1     Guard threshold
    11 SamanskiiConstant 2                          -1     Samanskii constant
    12 Restart         No                         -1     Do not use last solution as initial guess
    13 ArcLevelMaxStep 0.0                        -1     Maximum arc-length step for source-level continuation
    14 MaxStepRatio    100                        -1     Ratio of maximum to given number of steps
    15 MaxShrinkage    1.0e-5                     -1     Maximum step shrinkage
    16 OutputAllSolns  ''                         -1     Output spectra at all computed steps when sweeping
    17 ArcMaxStep      0.0                        -1     Maximum arc-length step
    18 ArcMinValue     ''                         -1     Minimum value for parameter during arclength continuation
    19 ArcMaxValue     ''                         -1     Maximum value for parameter during arclength continuation
    20 UseGear         ''                         -1     Use Gears method for envelope integration
    21 EnvIntegOrder   1                          -1     Numerical integration order for envelope
    22 SweepOffset     ''                          6     Sweep variable offset
    23 EnvNoise        ''                         -1     Add noise sources during envelope simulation
    24 EnvBandwidth    1                          -1     Envelope relative bandwidth (default = 1)
    25 EnvRelTrunc     ''                         -1     Relative truncation factor for Envelope fitting
    26 EnvAbsTrunc     ''                         -1     Absolute truncation factor for Envelope fitting
    27 EnvWarnPoorFit  ''                         -1     Enables warning of poor envelope fits
    28 EnvUsePoorFit   ''                         -1     Use poor fits instead of constant values
    29 EnvSkipDC_Fit   ''                         -1     Dont do pole/zero fittting for baseband
    30 ResetOsc        ''                         -1     Reset initial oscillator envelope solution
    31 OscMode         ''                         -1     Flag to indicate oscillator mode
    32 OscPortName     ''                         -1     Oscillator port used to break feedback loop
    33 IgnoreOscErrors ''                         -1     Continue sweep even after oscillation convergence error
    34 SweepVar        time                       -1     Name of variable or parameter to be swept
    35 UseSweepPlan    ''                         -1     Flag to indicate use of SweepPlan
    36 SweepPlan       ''                         -1     SweepPlan instance path name for sweep values
    37 Start           0nsec                       6     Start value
    38 Stop            100nsec                     6     Stop value
    39 Step            1nsec                       6     Step value
    40 Center          ''                          6     Center value 
    41 Span            ''                          6     Span
    42 Lin             ''                         -1     Linear sweep 
    43 Dec             ''                         -1     Number of points per decade
    44 Log             ''                         -1     Log sweep
    45 Reverse         ''                         -1     Reverse sweep
    46 Pt              ''                         -1     Single point
    47 Sort            'LINEAR START STEP'        -1     Sort values
    48 Other           ''                         -1     Output string to netlist
END_ELEMENT

FDD10P    FDD10P     1
     1 Equation        list(prm("FddCurrent",1,1,)) -2     FDD Equation Defining A Constitutive Relationship
END_ELEMENT

FDD1P     FDD1P      1
     1 Equation        list(prm("FddCurrent",1,1,)) -2     FDD Equation Defining A Constitutive Relationship
END_ELEMENT

FDD2P     FDD2P      1
     1 Equation        list(prm("FddCurrent",1,1,)) -2     FDD Equation Defining A Constitutive Relationship
END_ELEMENT

FDD3P     FDD3P      1
     1 Equation        list(prm("FddCurrent",1,1,)) -2     FDD Equation Defining A Constitutive Relationship
END_ELEMENT

FDD4P     FDD4P      1
     1 Equation        list(prm("FddCurrent",1,1,)) -2     FDD Equation Defining A Constitutive Relationship
END_ELEMENT

FDD5P     FDD5P      1
     1 Equation        list(prm("FddCurrent",1,1,)) -2     FDD Equation Defining A Constitutive Relationship
END_ELEMENT

FDD6P     FDD6P      1
     1 Equation        list(prm("FddCurrent",1,1,)) -2     FDD Equation Defining A Constitutive Relationship
END_ELEMENT

FDD7P     FDD7P      1
     1 Equation        list(prm("FddCurrent",1,1,)) -2     FDD Equation Defining A Constitutive Relationship
END_ELEMENT

FDD8P     FDD8P      1
     1 Equation        list(prm("FddCurrent",1,1,)) -2     FDD Equation Defining A Constitutive Relationship
END_ELEMENT

FDD9P     FDD9P      1
     1 Equation        list(prm("FddCurrent",1,1,)) -2     FDD Equation Defining A Constitutive Relationship
END_ELEMENT

FET       FET       10
     1 G               20.0uS                      2     Magnitude of transconductance at DC
     2 T               1.0nsec                     6     Time delay associated with transconductance
     3 F               1.0GHz                      0     Transconductance roll-off frequency
     4 Cgs             10.0pF                      4     Gate to source capacitance
     5 Ggs             1.0uS                       2     Gate to source conductance
     6 Ri              0.1ohm                      1     Channel resistance
     7 Cdg             10.0pF                      4     Drain to gate capacitance
     8 Cdc             10.0pF                      4     Dipole layer capacitance
     9 Cds             10.0pF                      4     Drain to source capacitance
    10 Rds             500.0ohm                    1     Drain to source resistance
END_ELEMENT

FET2      FET2      11
     1 G               20.0uS                      2     Magnitude of transconductance at DC
     2 T               1.0nsec                     6     Time delay associated with transconductance
     3 F               1.0GHz                      0     Transconductance roll-off frequency
     4 Cgs             10.0pF                      4     Gate to source capacitance
     5 Ggs             1.0uS                       2     Gate to source conductance
     6 Ri              0.1ohm                      1     Channel resistance
     7 Cdg             10.0pF                      4     Drain to gate capacitance
     8 Cdc             10.0pF                      4     Dipole layer capacitance
     9 Cds             10.0pF                      4     Drain to source capacitance
    10 Rds             500.0ohm                    1     Drain to source resistance
    11 Rs              0.1ohm                      1     Source resistance
END_ELEMENT

FETN1     FETN1      8
     1 G               0.03S                       2     Transconductance
     2 T               3.0psec                     6     Time delay associated with transconductance
     3 Cgs             0.40pF                      4     Gate to source capacitance
     4 Ri              3.0ohm                      1     Channel resistance
     5 Rds             300.0ohm                    1     Drain to source resistance
     6 P               0.8                        -1     Noise parameter P
     7 R               1.2                        -1     Noise parameter R
     8 C               0.90                       -1     Noise parameter C
END_ELEMENT

FETN2     FETN2      9
     1 G               0.03S                       2     Transconductance
     2 T               3.0psec                     6     Time delay associated with transconductance
     3 Cgs             0.40pF                      4     Gate to source capacitance
     4 Ri              3.0ohm                      1     Channel resistance
     5 Rs              3.70ohm                     1     Source resistance
     6 Rg              0.80ohm                     1     Gate resistance
     7 Kr              0.050                      -1     Noise parameter Kr
     8 Kc              1.4                        -1     Noise parameter Kc
     9 Kg              1.50                       -1     Noise parameter Kg
END_ELEMENT

FETN3     FETN3     10
     1 G               0.03S                       2     Transconductance
     2 T               3.0psec                     6     Time delay associated with transconductance
     3 Cgs             0.40pF                      4     Gate to source capacitance
     4 Ri              3.0ohm                      1     Channel resistance
     5 Rs              3.70ohm                     1     Source resistance
     6 Rg              0.80ohm                     1     Gate resistance
     7 K1              0.020                      -1     Noise parameter K1
     8 K2              0.800                      -1     Noise parameter K2
     9 K3              2.2                        -1     Noise parameter K3
    10 K4              160.0                      -1     Noise parameter K4
END_ELEMENT

FETN4     FETN4      8
     1 G               0.03S                       2     Transconductance
     2 T               3.0psec                     6     Time delay associated with transconductance
     3 Cgs             0.40pF                      4     Gate to source capacitance
     4 Ri              3.0ohm                      1     Channel resistance
     5 Rs              3.70ohm                     1     Source resistance
     6 Rg              0.80ohm                     1     Gate resistance
     7 NFMin           2.0                        -1     Minimum noise figure in dB
     8 FRef            10.0GHz                     0     Reference frequency at which NFMin is measured
END_ELEMENT

FETN4a    FETN4a     7
     1 G               0.03S                       2     Transconductance
     2 T               3.0psec                     6     Time delay associated with transconductance
     3 Cgs             0.40pF                      4     Gate to source capacitance
     4 Ri              3.0ohm                      1     Channel resistance
     5 Rs              3.70ohm                     1     Source resistance
     6 Rg              0.80ohm                     1     Gate resistance
     7 K               1.0                        -1     Noise parameter K
END_ELEMENT

FETN5     FETN5      8
     1 G               0.03S                       2     Transconductance
     2 T               3.0psec                     6     Time delay associated with transconductance
     3 Cgs             0.40pF                      4     Gate to source capacitance
     4 Ri              3.0ohm                      1     Channel resistance
     5 Rds             450.0ohm                    1     Drain to source resistance
     6 Rs              3.70ohm                     1     Source resistance
     7 Rg              0.80ohm                     1     Gate resistance
     8 Sio             710.0                      -1     Noise parameter Sio
END_ELEMENT

FM_DemodTuned FM_DemodTuned  3
     1 Sensitivity     1KHz                        0     Demodulation Sensitivity, in Hz/Volt
     2 Fnom            1GHz                        0     Nominal Input Frequency
     3 Rout            50ohm                       1     Output Resistance
END_ELEMENT

FM_ModTuned FM_ModTuned  3
     1 Sensitivity     1KHz                        0     Modulation Sensitivity, Hz/Volt
     2 Fnom            1GHz                        0     Nominal Input Frequency
     3 Rout            50ohm                       1     Output Resistance
END_ELEMENT

FORMATA   FORMATA    0
END_ELEMENT

FORMATB   FORMATB    0
END_ELEMENT

FORMATC   FORMATC    0
END_ELEMENT

FORMATD   FORMATD    0
END_ELEMENT

FORMATE   FORMATE    0
END_ELEMENT

FSUB      FSUB       5
     1 Er              2.2                        -1     Relative dielectric constant
     2 Fdw             62.5mils                    5     Thickness of slab
     3 Fa              900.0mils                   5     Inside width of enclosure
     4 Fb              400.0mils                   5     Inside height of enclosure
     5 Cond            1.0E+306                   -1     Conductor conductivity
END_ELEMENT

FreqMult  FreqMult  14
     1 S11             0                          -1     Port1 reflection coefficient
     2 S22             0                          -1     Port2 reflection coefficient
     3 G1              (-3.)                      13     Power gain of input tone, in dB
     4 G2              ''                         13     Power gain of second harmonic, in dB
     5 G3              ''                         13     Power gain of third harmonic, in dB
     6 G4              ''                         13     Power gain of fourth harmonic, in dB
     7 G5              ''                         13     Power gain of fifth harmonic, in dB
     8 G6              ''                         13     Power gain of sixth harmonic, in dB
     9 G7              ''                         13     Power gain of seventh harmonic, in dB
    10 G8              ''                         13     Power gain of eighth harmonic, in dB
    11 G9              ''                         13     Power gain of ninth harmonic, in dB
    12 PMin            -40.                       -1     Minimum input power for specified conversion in dBm
    13 Z1              50.ohm                      1     reference impedance for port1
    14 Z2              50.ohm                      1     reference impedance for port2
END_ELEMENT

GaAsFET   GaAsFET    4
     1 Model           MESFETM1                   -1     Model instance name
     2 Area            ''                         -1     Scaling Factor
     3 Temp            ''                         12     Device operating temperature
     4 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

GaCircle  GaCircle   1
     1 Function        list(our_gacir=ga_circle(S,2,51)) -1     ga_circle(2x2 S_matrix,gain,num_of_pts)
END_ELEMENT

GainComp  GainComp   1
     1 Function        list(our_gcomp=gain_comp(S21[::,0])) -1     gain_comp(complex_transmission_coeff)
END_ELEMENT

GainRipple GainRipple  1
     1 Function        list(our_gr=ripple(mag(S21))) -1     ripple( gain_vector )
END_ELEMENT

GlCircle  GlCircle   1
     1 Function        list(our_glcir=gl_circle(S,2,51)) -1     gl_circle(2x2 S_matrix,gain,num_of_pts)
END_ELEMENT

Goal      Goal       8
     1 Expr            ''                         -1     Goal expression
     2 SimInstanceName ''                         -1     Simulation component name
     3 Min             ''                         -1     Minimum acceptable spec value
     4 Max             ''                         -1     Maximum acceptable spec value
     5 Weight          ''                         -1     Weighting used in error function calculation
     6 RangeVar        ''                         -1     Name of range variable
     7 RangeMin        ''                         -1     Minimum acceptable value for range variable
     8 RangeMax        ''                         -1     Maximum acceptable value for range variable
END_ELEMENT

GpCircle  GpCircle   1
     1 Function        list(our_gpcir=gp_circle(S,2,51)) -1     gp_circle(2x2 S_matrix,gain,num_of_pts)
END_ELEMENT

GrpDelayRipple GrpDelayRipple  1
     1 Function        list(our_gd_rpl=ripple(S.delay(2,1))) -1     ripple( group_delay_vector )
END_ELEMENT

GsCircle  GsCircle   1
     1 Function        list(our_gscir=gs_circle(S,2,51)) -1     gs_circle(2x2 S_matrix,gain,num_of_pts)
END_ELEMENT

Gyrator   Gyrator    1
     1 Ratio           1                          -1     gyrator ratio
END_ELEMENT

HPDiode   HPDiode    2
     1 Model           HPDIODEM1                  -1     Model instance name
     2 Area            ''                          5     Junction
END_ELEMENT

HPF_Bessel HPF_Bessel 11
     1 Fpass           1GHz                        0     Passband Edge Frequency
     2 Apass           3dB                        13     Attenuation at Passband Edge, in dB
     3 GDpass          0.9                        -1     Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
     4 StopType        OPEN                       -2     Input is open or short for stopband
     5 MaxRej          ''                         13     Maximum Rejection Level , in dB
     6 N               0                          -1     Filter Order (if N > 0, it overwrites GDpass)
     7 IL              0dB                        13     Passband Insertion Loss, in dB
     8 Qu              1E308                      -1     Unloaded Quality Factor
     9 Z1              50ohm                       1     Input Port Reference Impedance
    10 Z2              50ohm                       1     Output Port Reference Impedance
    11 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

HPF_Butterworth HPF_Butterworth 12
     1 Fpass           1GHz                        0     Passband Edge Frequency
     2 Apass           3dB                        13     Attenuation at Passband Edge, in dB
     3 Fstop           0.8GHz                      0     Stopband Edge Frequency
     4 Astop           20dB                       13     Attenuation at Stopband Edge, in dB
     5 StopType        OPEN                       -2     Input is open or short for stopband
     6 MaxRej          ''                         13     Maximum Rejection Level , in dB
     7 N               0                          -1     Filter Order (if N > 0, it overwrites Fstop and Astop)
     8 IL              0dB                        13     Passband Insertion Loss, in dB
     9 Qu              1E308                      -1     Unloaded Quality Factor
    10 Z1              50ohm                       1     Input Port Reference Impedance
    11 Z2              50ohm                       1     Output Port Reference Impedance
    12 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

HPF_Chebyshev HPF_Chebyshev 13
     1 Fpass           1GHz                        0     Passband Edge Frequency
     2 Apass           1dB                        13     Attenuation at Passband Edge, in dB
     3 Ripple          1dB                        13     Passband Ripple, in dB
     4 Fstop           0.8GHz                      0     Stopband Edge Frequency
     5 Astop           20dB                       13     Attenuation at Stopband Edge, in dB
     6 StopType        OPEN                       -2     Input is open or short for stopband
     7 MaxRej          ''                         13     Maximum Rejection Level , in dB
     8 N               0                          -1     Filter Order (if N > 0, it overwrites Fstop and Astop)
     9 IL              0dB                        13     Passband Insertion Loss, in dB
    10 Qu              1E308                      -1     Unloaded Quality Factor
    11 Z1              50ohm                       1     Input Port Reference Impedance
    12 Z2              50ohm                       1     Output Port Reference Impedance
    13 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

HPF_Elliptic HPF_Elliptic 12
     1 Fpass           1GHz                        0     Passband Edge Frequency
     2 Ripple          1dB                        13     Passband Ripple, in dB
     3 Fstop           0.8GHz                      0     Stopband Edge Frequency
     4 Astop           20dB                       13     Attenuation at Stopband Edge, in dB
     5 StopType        OPEN                       -2     Input is open or short for stopband
     6 MaxRej          ''                         13     Maximum Rejection Level , in dB
     7 N               0                          -1     Filter Order (if N > 0, it overwrites Fstop and Astop)
     8 IL              0dB                        13     Passband Insertion Loss, in dB
     9 Qu              1E308                      -1     Unloaded Quality Factor
    10 Z1              50ohm                       1     Input Port Reference Impedance
    11 Z2              50ohm                       1     Output Port Reference Impedance
    12 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

HPF_Gaussian HPF_Gaussian 11
     1 Fpass           1GHz                        0     Passband Edge Frequency
     2 Apass           3dB                        13     Attenuation at Passband Edge, in dB
     3 GDpass          0.9                        -1     Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
     4 StopType        OPEN                       -2     Input is open or short for stopband
     5 MaxRej          ''                         13     Maximum Rejection Level , in dB
     6 N               0                          -1     Filter Order (if N > 0, it overwrites GDpass)
     7 IL              0dB                        13     Passband Insertion Loss, in dB
     8 Qu              1E308                      -1     Unloaded Quality Factor
     9 Z1              50ohm                       1     Input Port Reference Impedance
    10 Z2              50ohm                       1     Output Port Reference Impedance
    11 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

HPF_PoleZero HPF_PoleZero  7
     1 Poles           'list(-0.7+j*0.7, -0.7-j*0.7)' -1     List of Complex Poles
     2 Zeros           ''                         -1     List of Complex Zeros
     3 Gain            1.0                        -1     Gain Factor
     4 Fpass           1GHz                        0     Passband Edge Frequency
     5 StopType        OPEN                       -2     Input is open or short for stopband
     6 Z1              50ohm                       1     Input Port Reference Impedance
     7 Z2              50ohm                       1     Output Port Reference Impedance
END_ELEMENT

HPF_Polynomial HPF_Polynomial  7
     1 Numerator       1                          -1     List of Numerator Coefficients
     2 Denominator     list(1,1.4,1)              -1     List of Denominator Coefficients
     3 Gain            1.0                        -1     Gain Factor
     4 Fpass           1GHz                        0     Passband Edge Frequency
     5 StopType        OPEN                       -2     Input is open or short for stopband
     6 Z1              50ohm                       1     Input Port Reference Impedance
     7 Z2              50ohm                       1     Output Port Reference Impedance
END_ELEMENT

HPF_RaisedCos HPF_RaisedCos  9
     1 Alpha           0.35                       -1     Rolloff factor defining filters excess bandwidth, 0 <= Alpha <= 1
     2 SymbolRate      24.3KHz                     0     Digital symbol rate defining filters bandwidth
     3 DelaySymbols    5                          -1     Number of symbols delayed by the filter
     4 Exponent        0.5                        -1     Exponent Factor ( 0<= Exponent <= 1 )
     5 DutyCycle       100                        -1     Pulse duty cycle in percent, used for sinc(x) correction
     6 SincE           y_n0                       -2     Yes for applying Exponent Factor on sinc(x) correction
     7 Gain            1.0                        -1     Gain Factor
     8 Zout            50ohm                       1     Output Impedance
     9 WindowType      0                          -1     Window Type, 0=None, 1=Hann, 2=Hamming
END_ELEMENT

HP_Diode_Model HP_Diode_Model  4
     1 File            Diode.mds                  -1     Name of Rawfile
     2 Rs              ''                          1     Series resistance
     3 Ls              ''                          3     Parasitic inductance
     4 Tt              ''                          6     Transit time,s
END_ELEMENT

HP_FET    HP_FET     3
     1 Model           HPFETM1                    -1     Model instance name
     2 Wtot            ''                          5     Total gate width
     3 N               ''                         -1     Number of gate fingers
END_ELEMENT

HP_FET_Model HP_FET_Model  7
     1 File            State.mds                  -1     Name of Rawfile
     2 Rs              ''                          1     Source resistance
     3 Rg              ''                          1     Gate resistance
     4 Rd              ''                          1     Drain resistance
     5 Ls              ''                          3     Source inductance
     6 Lg              ''                          3     Gate inductance
     7 Ld              ''                          3     Drain inductance
END_ELEMENT

HP_MOS    HP_MOS     3
     1 Model           HPMOSM1                    -1     Model instance name
     2 Wtot            ''                          5     Total gate width
     3 N               ''                         -1     Number of gate fingers
END_ELEMENT

HP_MOS_Model HP_MOS_Model  7
     1 File            State.mds                  -1     Name of Rawfile
     2 Rs              ''                          1     Source resistance
     3 Rg              ''                          1     Gate resistance
     4 Rd              ''                          1     Drain resistance
     5 Ls              ''                          3     Source inductance
     6 Lg              ''                          3     Gate inductance
     7 Ld              ''                          3     Drain inductance
END_ELEMENT

HYBCOMB1  HYBCOMB1  19
     1 ZB              50.0ohm                     1     Characteristic impedance of balun line
     2 LenB            12.0mils                    5     Physical length of balun line
     3 KB              2.0                        -1     Effective dielectric constant of balun line
     4 AB              0.0                        -1     Attenuation of balun line, dB per unit length
     5 FB              1.0GHz                      0     Frequency for scaling attenuation of balun line
     6 NB              5.0                        -1     Number of turns of balun line
     7 ALB             960.0nH                     3     Inductance index of balun line
     8 ZX              50.0ohm                     1     Characteristic impedance of transformer line
     9 LenX            12.0mils                    5     Physical length of transformer line
    10 KX              2.0                        -1     Effective dielectric constant of transformer line
    11 AX              0.0                        -1     Attenuation of transformer line, dB per unit length
    12 FX              1.0GHz                      0     Frequency for scaling attenuation of transformer line
    13 NX              5.0                        -1     Number of turns of transformer line
    14 ALX             960.0nH                     3     Inductance index of transformer line
    15 TanD            0                          -1     Dielectric loss tangent
    16 Mur             1                          -1     Relative permeability
    17 TanM            0                          -1     Permeability
    18 Sigma           0                          -1     Dielectric conductivity
    19 Temp            ''                         12     Physical temperature
END_ELEMENT

HYBCOMB2  HYBCOMB2  19
     1 ZB              50.0ohm                     1     Characteristic impedance of balun line
     2 LenB            12.0mils                    5     Physical length of balun line
     3 KB              2.0                        -1     Effective dielectric constant of balun line
     4 AB              0.0                        -1     Attenuation of balun line, dB per unit length
     5 FB              1.0GHz                      0     Frequency for scaling attenuation of balun line
     6 MUB             100.0                      -1     Relative permeability of ferrite sleeve for balun line
     7 LB              20.0nH                      3     Inductance (per unit length) of balun line without the sleeve
     8 ZX              50.0ohm                     1     Characteristic impedance of transformer line
     9 LenX            12.0mils                    5     Physical length of transformer line
    10 KX              2.0                        -1     Effective dielectric constant of transformer line
    11 AX              0.0                        -1     Attenuation of transformer line, dB per unit length
    12 FX              1.0GHz                      0     Frequency for scaling attenuation of transformer line
    13 MUX             100.0                      -1     Relative permeability of ferrite sleeve for transformer line
    14 LX              20.0nH                      3     Inductance (per unit length) of transformer line without the sleeve
    15 TanD            0                          -1     Dielectric loss tangent
    16 Mur             1                          -1     Relative permeability
    17 TanM            0                          -1     Permeability
    18 Sigma           0                          -1     Dielectric conductivity
    19 Temp            ''                         12     Physical temperature
END_ELEMENT

HYBPI     HYBPI      9
     1 G               20.0uS                      2     Transconductance
     2 T               1.0nsec                     6     Transient time
     3 Cpi             10.0pF                      4     Base-emitter, PI capacitance
     4 Rpi             0.01ohm                     1     Base-emitter, PI resistance
     5 Cmu             5.0pF                       4     Base-collector, MU capacitance
     6 Rmu             1000.0ohm                   1     Base-collector, MU resistance
     7 Rb              0.02ohm                     1     Base resistance
     8 Rc              500.0ohm                    1     Collector resistance
     9 Re              0.04ohm                     1     Emitter resistance
END_ELEMENT

HarmonicBalance HarmonicBalance 92
     1 MaxOrder        4                          -1     Maximum combined order to be considered
     2 Freq            1.0GHz                      0     Frequency of fundamental
     3 Order           3                          -1     Maximum order of fundamental to be considered
     4 NestLevel       2                          -1     Levels of subcircuits to output
     5 StatusLevel     2                          -1     Degree of annotation
     6 FundOversample  1                          -1     Oversampling ratio for FFT
     7 Oversample      ''                         -1     Oversampling ratio for FFT (repeated)
     8 PackFFT         ''                         -1     Pack FFT in multi-tone analysis
     9 MaxIters        10                         -1     Max number of iterations
    10 GuardThresh     ''                         -1     Guard threshold
    11 SamanskiiConstant 2                          -1     Samanskii constant
    12 Restart         No                         -1     Do not use last solution as initial guess
    13 ArcLevelMaxStep 0.0                        -1     Maximum arc-length step for source-level continuation
    14 MaxStepRatio    100                        -1     Ratio of maximum to given number of steps
    15 MaxShrinkage    1.0e-5                     -1     Maximum step shrinkage
    16 OutputAllSolns  ''                         -1     Output spectra at all computed steps when sweeping
    17 ArcMaxStep      0.0                        -1     Maximum arc-length step
    18 ArcMinValue     ''                         -1     Minimum value for parameter during arclength continuation
    19 ArcMaxValue     ''                         -1     Maximum value for parameter during arclength continuation
    20 SS_MixerMode    ''                         -1     Flag to indicate SS mixer mode
    21 SS_UseSweepPlan ''                         -1     Flag to indicate use of SweepPlan
    22 SS_Plan         ''                         -1     Instance/path name for small signal sweep values
    23 SS_Start        1.0GHz                      0     Start frequency
    24 SS_Stop         10.0GHz                     0     Stop frequency
    25 SS_Step         1.0GHz                      0     Step frequency
    26 SS_Center       ''                          0     Center frequency
    27 SS_Span         ''                          0     Span
    28 SS_Lin          ''                         -1     Linear sweep 
    29 SS_Dec          ''                         -1     Number of points per decade
    30 SS_Log          ''                         -1     Log sweep
    31 SS_Reverse      ''                         -1     Reverse sweep
    32 SS_Pt           ''                          0     Single frequency
    33 SS_Sort         'LINEAR START STEP'        -1     Sort frequencies
    34 SS_Freq         ''                          0     Small signal mixer frequency
    35 SS_Thresh       ''                         -1     Small signal spectral threshold
    36 UseAllSS_Freqs  yes                        -1     Solve for all small signal mixer sidebands (requires more memory)
    37 MergeSS_Freqs   ''                         -1     Merge small- and large-signal solutions
    38 InputFreq       1Hz                         0     Input frequency for desired SSB mixing term
    39 NLNoiseMode     ''                         -1     Flag to indicate nonlinear noise mode
    40 NLNoiseUseSweepPlan ''                         -1     Flag to indicate use of SweepPlan
    41 NoiseFreqPlan   ''                         -1     Instance/path name for noise sweep values
    42 NLNoiseStart    1.0GHz                      0     Start frequency
    43 NLNoiseStop     10.0GHz                     0     Stop frequency
    44 NLNoiseStep     1.0GHz                      0     Step frequency
    45 NLNoiseCenter   ''                          0     Center frequency
    46 NLNoiseSpan     ''                          0     Span
    47 NLNoiseLin      ''                         -1     Linear sweep 
    48 NLNoiseDec      ''                         -1     Number of points per decade
    49 NLNoiseLog      ''                         -1     Log sweep
    50 NLNoiseReverse  ''                         -1     Reverse sweep
    51 NLNoisePt       ''                          0     Single frequency
    52 NLNoiseSort     'LINEAR START STEP'        -1     Sort frequencies
    53 FreqForNoise    ''                          0     Single point noise frequency
    54 NoiseInputPort  1                          -1     Input port for noise figure calculation
    55 NoiseOutputPort 2                          -1     Output port for noise figure calculation
    56 PhaseNoise      No                         -1     Specify noise frequency as offset from oscillation frequency
    57 FM_Noise        ''                         -1     Consider AM to FM conversion in oscillator phase noise analysis
    58 NoiseNode       ''                         -1     Nodename to compute noise voltage (repeatable)
    59 SortNoise       NoiseSortOff               -1     Sort Noise Contribution by: Value/1, Name/2  (default: 0/NoOutput)
    60 NoiseThresh     ''                         -1     Noise Contribution Threshold
    61 IncludePortNoise ''                         -1     Include port noise in noise voltage and currents
    62 NoisyTwoPort    ''                         -1     Compute noisy two-port parameters: sopt, rn, & nfmin
    63 BandwidthForNoise 1.0Hz                       0     Bandwidth for spectral noise analysis
    64 OutputBudgetIV  ''                         -1     Output top-level pin currents and voltages
    65 UseKrylov       ''                         -1     Use Krylov solver
    66 UseInitialAWHB  ''                         -1     Use initial AWHB stage before Krylov
    67 AWHB_WindowSize ''                         -1     AWHB window size
    68 GMRES_Restart   ''                         -1     GMRES iterations before auto-restart
    69 KrylovUsePacking ''                         -1     Use Krylov spectral packing
    70 KrylovPackingThresh ''                         -1     Krylov bandwidth threshold
    71 KrylovTightTol  ''                         -1     GMRES tolerance
    72 KrylovLooseTol  ''                         -1     Loose tolerance for Krylov loop
    73 KrylovLooseIters ''                         -1     Min number of iterations to invoke loose tolerance
    74 KrylovMaxIters  ''                         -1     Maximum number of GMRES iterations
    75 OscMode         ''                         -1     Flag to indicate oscillator mode
    76 OscPortName     ''                         -1     Oscillator port used to break feedback loop
    77 IgnoreOscErrors ''                         -1     Continue sweep even after oscillation convergence error
    78 SweepVar        ''                         -1     Name of variable or parameter to be swept
    79 UseSweepPlan    ''                         -1     Flag to indicate use of SweepPlan
    80 SweepPlan       ''                         -1     SweepPlan instance path name for sweep values
    81 Start           1                          -1     Start value
    82 Stop            10                         -1     Stop value
    83 Step            1                          -1     Step value
    84 Center          ''                         -1     Center value 
    85 Span            ''                         -1     Span
    86 Lin             ''                         -1     Linear sweep 
    87 Dec             ''                         -1     Number of points per decade
    88 Log             ''                         -1     Log sweep
    89 Reverse         ''                         -1     Reverse sweep
    90 Pt              ''                         -1     Single point
    91 Sort            'LINEAR START STEP'        -1     Sort frequencies
    92 Other           ''                         -1     Output string to netlist
END_ELEMENT

Hybrid    Hybrid    12
     1 H11             ''                          1     Input impedance, Ohms
     2 H12             ''                         -1     Reverse voltage gain
     3 H21             ''                         -1     Forward current gain
     4 H22             ''                          2     Output conductance
     5 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
     6 ImpMode         ''                         -1     Convolution mode
     7 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
     8 ImpDeltaFreq    ''                          0     Sample spacing in frequency
     9 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    10 ImpWindow       ''                         -1     Smoothing window
    11 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    12 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Hybrid180 Hybrid180  6
     1 Loss            0dB                        13     Loss, in dB
     2 GainBal         0dB                        13     Gain Balance between Output Ports, in dB
     3 PhaseBal        0deg                        7     Phase Balance between Output Ports, in degree
     4 Rref            50ohm                       1     Port Reference Impedance
     5 Temp            ''                         12     Temperature in Degree Celsius
     6 Delay           ''                          6     time delay
END_ELEMENT

Hybrid90  Hybrid90   6
     1 Loss            0dB                        13     Loss, in dB
     2 GainBal         0dB                        13     Gain Balance between Output Ports, in dB
     3 PhaseBal        0deg                        7     Phase Balance between Output Ports, in degree
     4 Rref            50ohm                       1     Port Reference Impedance
     5 Temp            ''                         12     Temperature in Degree Celsius
     6 Delay           ''                          6     time delay
END_ELEMENT

IFINL     IFINL      4
     1 Subst           FSub1                      -1     Substrate instance name
     2 D               20.0mils                    5     Width of gap
     3 L               1000.0mils                  5     Length of finline
     4 Temp            ''                         12     Physical temperature
END_ELEMENT

IFINLT    IFINLT     3
     1 Subst           FSub1                      -1     Substrate instance name
     2 D               20.0mils                    5     Width of gap
     3 Temp            ''                         12     Physical temperature
END_ELEMENT

INDQ      INDQ       5
     1 L               1.0nH                       3     Inductance
     2 Q               50.0                       -1     Quality factor
     3 F               100.0MHz                    0     Reference frequency for q
     4 Mode            loss_freq                  -1     Loss Mode for This Device
     5 Rdc             0.0ohm                      1     Resistance for modes 2 and 3
END_ELEMENT

IP3in     IP3in      1
     1 Function        list(our_ipi=ip3_in(vout,3,{1,0},{2,-1},50)) -1     ip3_in(vout,ss_gain,fund_freq,IM_freq,ref_imped)
END_ELEMENT

IP3out    IP3out     1
     1 Function        list(our_ipo=ip3_out(vout,{1,0},{2,-1},50)) -1     ip3_out(vout,fund_freq,IM_freq,ref_imped)
END_ELEMENT

IPn       IPn        1
     1 Function        list(our_ipn=ipn(Vplus,Vminus,current,{1,0},{2,-1},3)) -1     ipn(positive_voltage,negative_voltage,current,fund_freq,IM_freq,order)
END_ELEMENT

IQ_DemodTuned IQ_DemodTuned  2
     1 Fnom            1GHz                        0     Nominal Input Frequency
     2 Rout            50ohm                       1     Output Resistance
END_ELEMENT

IQ_ModTuned IQ_ModTuned  2
     1 Fnom            1GHz                        0     Nominal Input Frequency
     2 Rout            50ohm                       1     Output Resistance
END_ELEMENT

I_1Tone   I_1Tone    7
     1 I               1mA                        10     Current at center frequency, use polar() for phase
     2 Freq            1GHz                        0     Center frequency
     3 I_USB           ''                         10     Current of upper sideband small signal tone, use polar() for phase
     4 I_LSB           ''                         10     Current of lower sideband small-signal tone, use polar() for phase
     5 Idc             ''                         10     DC current
     6 Iac             1mA                        10     AC current, use polar() for phase
     7 FundIndex       ''                         -1     Fundamental Frequency Index (Can Be Used Instead of Specifying Freq")
END_ELEMENT

I_AC      I_AC       3
     1 Idc             0mA                        10     DC current
     2 Iac             1.0mA                      10     AC current, use polar() for phase
     3 Freq            freq                        0     Frequency
END_ELEMENT

I_DC      I_DC       2
     1 Idc             1.0mA                      10     DC current
     2 Iac             ''                         10     AC current, use polar() for phase
END_ELEMENT

I_Noise   I_Noise    1
     1 I_Noise         1pA                        10     Noise current magnitude
END_ELEMENT

I_NoiseBD I_NoiseBD  7
     1 K               ''                         -1     Multiplicative Constant
     2 Ie              ''                         -1     DC Bias Current Exponent
     3 A0              ''                         -1     Additive Constant in the Denominator
     4 A1              ''                         -1     Multiplication Factor for the Frequency
     5 Fe              ''                         -1     Frequency Exponent
     6 Elem            ''                         -1     ID of an element such as R, FET, BJT
     7 Pin             ''                         -1     Element Pin Number or Name
END_ELEMENT

I_Probe   I_Probe    5
     1 Mode            0                          -1     Mode: 0 => short, >0 => DC block, <0 => DC feed
     2 C               ''                          4     DC block capacitance (transient only)
     3 L               ''                          3     DC feed inductance(transient only)
     4 Gain            ''                         -1     Current gain
     5 wImax           ''                         10     Maximum current (warning)
END_ELEMENT

I_SpectrumDataset I_SpectrumDataset  3
     1 Dataset         ''                         -1     Dataset name
     2 Expression      ''                         -1     Dataset variable or expression
     3 Freq            1GHz                        0     Fundamental frequency
END_ELEMENT

I_nHarm   I_nHarm    5
     1 Freq            1GHz                        0     Fundamental frequency
     2 I               1mA                        10     N-th harmonic amplitude (use Add   for more harmonics), use polar() for phase
     3 Idc             0mA                        10     DC component
     4 Iac             1mA                        10     AC current, use polar() for phase
     5 FundIndex       ''                         -1     Fundamental Frequency Index (Can Be Used Instead of Specifying Freq")
END_ELEMENT

I_nTone   I_nTone    4
     1 Freq            1GHz                        0     N-th frequency tone (use Add   for more tones)
     2 I               1mA                        10     Corresponding N-th tone amplitude, (use Add   for more amplitudes), use polar() for phase
     3 Idc             0mA                        10     DC component
     4 Iac             1mA                        10     AC current, use polar() for phase
END_ELEMENT

Ifc       Ifc        1
     1 Function        list(our_ifc=ifc(I_Probe1.i,{1,0})) -1     ifc(current_probe,desired_harm_freq)
END_ELEMENT

IfcTran   IfcTran    1
     1 Function        'list(our_ifct=ifc_tran(I_Probe1.i,1GHz, 1))' -1     ifc_tran(current_probe,fund_freq,num_of_harm)
END_ELEMENT

InitCond  InitCond   2
     1 V               0V                          9     Initial node voltage for transient simulation
     2 R               ''                          1     Connection resistance
END_ELEMENT

InitCondByName InitCondByName  1
     1 NodeName        list(prm("NodeSetForm",,0V,)) -1     NodeName/Inital voltage/Connection resistance
END_ELEMENT

IntegratorSML IntegratorSML  3
     1 GainAC          1.                         -1     integrator gain
     2 GainDC          0.                         -1     gain of dc constant
     3 Rref            50.ohm                      1     reference resistance for both ports
END_ELEMENT

IsolatorSML IsolatorSML 15
     1 F1              ''                          0     first frequency break point
     2 F2              ''                          0     second frequency break point
     3 F3              ''                          0     third frequency break point
     4 Loss1           0.dB                       13     attenuation in dB for frequencies <=F1
     5 Loss2           0.dB                       13     attenuation in dB for F1<frequency<=F2
     6 Loss3           0.dB                       13     attenuation in dB for F2>frequency<=F3
     7 Loss4           0.dB                       13     attenuation in dB for frequencies >F3
     8 VSWR1           1.                         -1     VSWR at both ports for frequencies <=F1
     9 VSWR2           1.                         -1     VSWR at both ports for F1<frequency<=F2
    10 VSWR3           1.                         -1     VSWR at both ports for F2>frequency<=F3
    11 VSWR4           1.                         -1     VSWR at both ports for frequencies >F3
    12 Isolat          100.dB                     13     isolation in dB
    13 Z1              ''                          1     reference impedance for port1
    14 Z2              ''                          1     reference impedance for port2
    15 Temp            ''                         12     temperature in degrees Celsius
END_ELEMENT

IspecTran IspecTran  1
     1 Function        'list(our_ispect=ispec_tran(I_Probe1.i,1GHz, 8))' -1     ispec_tran(current_probe,fund_freq,num_of_harm)
END_ELEMENT

It        It         1
     1 Function        list(our_it=it(I_Probe1.i,0,10nsec,201)) -1     it(current_probe,tmin,tmax,num_of_pts)
END_ELEMENT

ItDataset ItDataset  9
     1 Dataset         ''                         -1     Dataset name
     2 Expression      ''                         -1     Dataset variable or expression
     3 Freq            0GHz                        0     Carrier frequency
     4 Gain            1.0                        -1     Gain to apply to dataset values; may be complex and time varying
     5 Tmax            ''                          6     Maximum dataset time to use
     6 Toffset         ''                          6     Initial dataset time offset
     7 Tscale          ''                         -1     Time speed-up scaling factor
     8 Idc             0mA                        10     DC offset current
     9 Interpolation   0                          -1     Interpolation method
END_ELEMENT

ItExp     ItExp      6
     1 I_Low           0mA                        10     Initial current
     2 I_High          1mA                        10     Pulse current
     3 Delay1          0nsec                       6     Rise delay time
     4 Tau1            1nsec                       6     Rise time constant
     5 Delay2          1nsec                       6     Fall delay time
     6 Tau2            1nsec                       6     Fall time constant
END_ELEMENT

ItPWL     ItPWL      1
     1 I_Tran          'pwl(time, 0ns,0mA, 10ns,1mA, 20ns,0mA)' -1     pwl(time, time-voltage pairs), or pwlr(time, Ncycles, time-voltage pairs)
END_ELEMENT

ItPulse   ItPulse    8
     1 I_Low           0mA                        10     Initial current
     2 I_High          1mA                        10     Pulse current
     3 Delay           0nsec                       6     Time delay
     4 Edge            linear                     -1     Rising and falling edge type
     5 Rise            1nsec                       6     Rise time
     6 Fall            1nsec                       6     Fall time
     7 Width           3nsec                       6     Pulse width
     8 Period          10nsec                      6     Fall time
END_ELEMENT

ItSFFM    ItSFFM     5
     1 Idc             0mA                        10     Initial current offset
     2 Amplitude       1mA                        10     Amplitude of sinusoidal wave
     3 CarrierFreq     1GHz                        0     Carrier Frequency
     4 ModIndex        0.5                        -1     Modulation Index
     5 SignalFreq      1MHz                        0     Signal Frequency
END_ELEMENT

ItSine    ItSine     6
     1 Idc             0mA                        10     Initial current offset
     2 Amplitude       1mA                        10     Amplitude of sinusoidal wave
     3 Freq            1GHz                        0     Frequency of sinusoidal wave
     4 Delay           0nsec                       6     Time Delay
     5 Damping         0                          -1     Damping factor
     6 Phase           0deg                        7     Phase value
END_ELEMENT

ItStep    ItStep     4
     1 I_Low           0mA                        10     Initial current
     2 I_High          1mA                        10     Pulse current
     3 Delay           0nsec                       6     Time delay
     4 Rise            1nsec                       6     Rise time
END_ELEMENT

ItUserDef ItUserDef  3
     1 I_Tran          damped_sin(time)           -1     Transient current
     2 Idc             ''                         10     DC current
     3 Iac             1mA                        10     AC current
END_ELEMENT

JFET_Model JFET_Model 32
     1 NFET            y_n1                       -1     Model Type - YES or NO
     2 PFET            y_n0                       -1     Model Type - YES or NO
     3 Vto             ''                          9     Pinch-off voltage, V
     4 Beta            ''                         -1     Transconductance parameter, A/(V*m)^2
     5 Lambda          ''                         -1     Channel length modulation parameter, 1/V
     6 Rd              ''                          1     Drain Resistance, Ohm
     7 Rs              ''                          1     Source Resistance, Ohm
     8 Is              ''                         10     Gate Saturation Current, A
     9 Js              ''                         10     Gate Saturation Current, A
    10 Cgs             ''                          4     G-S Zero-bias Junction Cap., F
    11 Cgd             ''                          4     G-D Zero-bias Junction Cap., F
    12 Pb              ''                         -1     Gate junction potential, V
    13 Fc              ''                         -1     Forward-bias Depletion Cap. Coefficient
    14 Tnom            ''                         12     Nominal ambient temperature, Celsius
    15 Kf              ''                         -1     Flicker Noise Coefficient
    16 Af              ''                         -1     Flicker Noise Exponent
    17 Imax            ''                         10     Explosion current, A
    18 N               ''                         -1     Gate P-N Emission Coefficient
    19 Isr             ''                         10     Gate P-N Recombination Current, A
    20 Nr              ''                         -1     Isr Emission Coefficient
    21 Alpha           ''                         -1     Ionization coefficient, 1/V
    22 Vk              ''                          9     Ionization knee voltage, V
    23 M               ''                         -1     Gate P-N grading coefficient
    24 Vtotc           ''                         -1     Vto temperature coefficient, V/Degree C
    25 Betatce         ''                         -1     Beta temperature coefficient, 1/Degree C
    26 Xti             ''                         -1     Temperature Exponent for Saturation Current
    27 Ffe             ''                         -1     Flicker noise frequency exponent
    28 wBvgs           ''                          9     Gate-Source Reverse Breakdown Voltage (warning), V
    29 wBvgd           ''                          9     Gate-Drain Reverse Breakdown Voltage (warning), V
    30 wBvds           ''                          9     Drain-Source Breakdown Voltage (warning), V
    31 wIdsmax         ''                         10     Maximum Drain-Source Current (warning), A
    32 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

JFET_NFET JFET_NFET  5
     1 Model           JFETM1                     -1     Model instance name
     2 Area            ''                         -1     Junction Area Factor
     3 Region          ''                         -1     DC operating region, 0=off, 1=on, 2=rev, 3=ohmic
     4 Temp            ''                         12     Device operating temperature
     5 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

JFET_PFET JFET_PFET  5
     1 Model           JFETM1                     -1     Model instance name
     2 Area            ''                         -1     Junction Area Factor
     3 Region          ''                         -1     DC operating region, 0=off, 1=on, 2=rev, 3=ohmic
     4 Temp            ''                         12     Device operating temperature
     5 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

L         L          7
     1 L               1.0nH                       3     Inductance
     2 R               ''                          1     Series resistance
     3 Temp            ''                         12     Temperature
     4 Tnom            ''                         12     Nominal temperature
     5 TC1             ''                         12     Temperature coefficient; per degree Celsius
     6 TC2             ''                         12     Temperature coefficient; per degree Celsius squared
     7 InitCond        ''                         -1     Initial condition for transient analysis
END_ELEMENT

LEVEL1_Model LEVEL1_Model 46
     1 NMOS            y_n1                       -1     Model Type - YES or NO
     2 PMOS            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          1                          -1     1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
     4 Capmod          1                          -1     0=NO CAP 1=CMEYER/WARD 2=SMOOTH 3=QMEYER
     5 Vto             ''                          9     Zero-Bias Threshold Voltage, V
     6 Kp              ''                         -1     Transconductance parameter, A/V^2
     7 Gamma           ''                         -1     Bulk Threshold parameter, V^(1/2)
     8 Phi             ''                          9     Surface Potential, V
     9 Lambda          ''                         -1     Channel length modulation parameter, 1/V
    10 Rd              ''                          1     Drain Resistance, Ohm
    11 Rs              ''                          1     Source Resistance, Ohm
    12 Cbd             ''                          4     B-D Zero-bias Junction Cap., F
    13 Cbs             ''                          4     B-S Zero-bias Junction Cap., F
    14 Is              ''                         10     Gate Saturation Current, A
    15 Pb              ''                          9     Bulk Junction Potential, V
    16 Cgso            ''                         -1     G-S Overlap Cap., F/m
    17 Cgdo            ''                         -1     G-D Overlap Cap., F/m
    18 Cgbo            ''                         -1     G-B Overlap Cap., F/m
    19 Rsh             ''                         -1     Drain and Source Diffusion Sheet Resistance, Ohm/Sq
    20 Cj              ''                         -1     Zero-bias Bulk Junction Cap., F/m^2
    21 Mj              ''                         -1     Junction  grading coefficient
    22 Cjsw            ''                         -1     Zero-bias Bulk Junction Sidewall Cap., F/m
    23 Mjsw            ''                         -1     Junction Sidewall grading coefficient
    24 Js              ''                         -1     Gate Saturation Current, A/m^2
    25 Tox             ''                          5     Oxide Thickness, m
    26 Nsub            ''                         -1     Substrate Doping, cm^(-3)
    27 Nss             ''                         -1     Surface State Density, cm^(-2)
    28 Tpg             ''                         -1     Type of Gate Material: +1=op -1=same 0=Al
    29 Ld              ''                          5     Lateral Diffusion, m
    30 Uo              ''                         -1     Surface Mobility, cm^2/(V*s)
    31 Kf              ''                         -1     Flicker Noise Coefficient
    32 Af              ''                         -1     Flicker Noise Exponent
    33 Fc              ''                         -1     Forward-bias Depletion Cap. Coefficient
    34 Rg              ''                          1     Gate Resistance, Ohm
    35 Rds             ''                          1     Drain-Source Shunt Resistance, Ohm
    36 Tnom            ''                         12     Nominal ambient temperature, Celsius
    37 N               ''                         -1     Bulk P-N Emission Coefficient
    38 Tt              ''                         -1     Bulk P-N Transit Time
    39 Ffe             ''                         -1     Flicker noise frequency exponent
    40 Imax            ''                         10     Explosion current, A
    41 wVsubfwd        ''                          9     Substrate Junction Forward Bias (warning), V
    42 wBvsub          ''                          9     Substrate Junction Reverse Breakdown Voltage (warning), V
    43 wBvg            ''                          9     Gate Oxide Breakdown Voltage (warning), V
    44 wBvds           ''                          9     Drain-Source Breakdown Voltage (warning), V
    45 wIdsmax         ''                         10     Maximum Drain-Source Current (warning), A
    46 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

LEVEL2_Model LEVEL2_Model 54
     1 NMOS            y_n1                       -1     Model Type - YES or NO
     2 PMOS            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          2                          -1     1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
     4 Capmod          1                          -1     0=NO CAP 1=CMEYER/WARD 2=SMOOTH 3=QMEYER
     5 Vto             ''                          9     Zero-Bias Threshold Voltage, V
     6 Kp              ''                         -1     Transconductance parameter, A/V^2
     7 Gamma           ''                         -1     Bulk Threshold parameter, V^(1/2)
     8 Phi             ''                          9     Surface Potential, V
     9 Lambda          ''                         -1     Channel length modulation parameter, 1/V
    10 Rd              ''                          1     Drain Resistance, Ohm
    11 Rs              ''                          1     Source Resistance, Ohm
    12 Cbd             ''                          4     B-D Zero-bias Junction Cap., F
    13 Cbs             ''                          4     B-S Zero-bias Junction Cap., F
    14 Is              ''                         10     Gate Saturation Current, A
    15 Pb              ''                          9     Bulk Junction Potential, V
    16 Cgso            ''                         -1     G-S Overlap Cap., F/m
    17 Cgdo            ''                         -1     G-D Overlap Cap., F/m
    18 Cgbo            ''                         -1     G-B Overlap Cap., F/m
    19 Rsh             ''                         -1     Drain and Source Diffusion Sheet Resistance, Ohm/Sq
    20 Cj              ''                         -1     Zero-bias Bulk Junction Cap., F/m^2
    21 Mj              ''                         -1     Junction  grading coefficient
    22 Cjsw            ''                         -1     Zero-bias Bulk Junction Sidewall Cap., F/m
    23 Mjsw            ''                         -1     Junction Sidewall grading coefficient
    24 Js              ''                         -1     Gate Saturation Current, A/m^2
    25 Tox             ''                          5     Oxide Thickness, m
    26 Nsub            ''                         -1     Substrate Doping, cm^(-3)
    27 Nss             ''                         -1     Surface State Density, cm^(-2)
    28 Nfs             ''                         -1     Fast Surface State Density, cm^(-2)
    29 Tpg             ''                         -1     Type of Gate Material: +1=op -1=same 0=Al
    30 Xj              ''                          5     Metallurgical Junction Depth, m
    31 Ld              ''                          5     Lateral Diffusion, m
    32 Uo              ''                         -1     Surface Mobility, cm^2/(V*s)
    33 Ucrit           ''                         -1     Critical Field for Mobility Degradation, V/cm
    34 Uexp            ''                         -1     Critical Field Exponent in Mobility Degradation
    35 Vmax            ''                         -1     Maximum Drift Velocity of Carriers, m/s
    36 Neff            ''                         -1     Total Channel Charge Coefficient
    37 Xqc             ''                         -1     Coefficient of Channel Charge Share
    38 Kf              ''                         -1     Flicker Noise Coefficient
    39 Af              ''                         -1     Flicker Noise Exponent
    40 Fc              ''                         -1     Forward-bias Depletion Cap. Coefficient
    41 Delta           ''                         -1     Width Effect on Threshold Voltage
    42 Rg              ''                          1     Gate Resistance, Ohm
    43 Rds             ''                          1     Drain-Source Shunt Resistance, Ohm
    44 Tnom            ''                         12     Nominal ambient temperature, Celsius
    45 N               ''                         -1     Bulk P-N Emission Coefficient
    46 Tt              ''                         -1     Bulk P-N Transit Time
    47 Ffe             ''                         -1     Flicker noise frequency exponent
    48 Imax            ''                         10     Explosion current, A
    49 wVsubfwd        ''                          9     Substrate Junction Forward Bias (warning), V
    50 wBvsub          ''                          9     Substrate Junction Reverse Breakdown Voltage (warning), V
    51 wBvg            ''                          9     Gate Oxide Breakdown Voltage (warning), V
    52 wBvds           ''                          9     Drain-Source Breakdown Voltage (warning), V
    53 wIdsmax         ''                         10     Maximum Drain-Source Current (warning), A
    54 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

LEVEL3_MOD_Model LEVEL3_MOD_Model 59
     1 NMOS            y_n1                       -1     Model Type - YES or NO
     2 PMOS            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          6                          -1     1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
     4 Capmod          1                          -1     0=NO CAP 1=CMEYER/WARD 2=SMOOTH 3=QMEYER
     5 Vto             ''                          9     Zero-Bias Threshold Voltage, V
     6 Kp              ''                         -1     Transconductance Parameter, A/V^2
     7 Gamma           ''                         -1     Bulk Threshold Parameter, V^(1/2)
     8 Gamma2          ''                         -1     Bulk Threshold Parameter Deep in Substrate, V^(1/2)
     9 Zeta            ''                         -1     Mobility Modulation with Substrate Bias Parameter
    10 Phi             ''                          9     Surface Potential, V
    11 Rd              ''                          1     Drain Resistance, Ohm
    12 Rs              ''                          1     Source Resistance, Ohm
    13 Cbd             ''                          4     B-D Zero-bias Junction Cap., F
    14 Cbs             ''                          4     B-S Zero-bias Junction Cap., F
    15 Is              ''                         10     Gate Saturation Current, A
    16 Pb              ''                          9     Bulk Junction Potential, V
    17 Cgso            ''                         -1     G-S Overlap Cap., F/m
    18 Cgdo            ''                         -1     G-D Overlap Cap., F/m
    19 Cgbo            ''                         -1     G-B Overlap Cap., F/m
    20 Rsh             ''                         -1     Drain and Source Diffusion Sheet Resistance, Ohm/Sq
    21 Cj              ''                         -1     Zero-bias Bulk Junction Cap., F/m^2
    22 Mj              ''                         -1     Junction  grading coefficient
    23 Cjsw            ''                         -1     Zero-bias Bulk Junction Sidewall Cap., F/m
    24 Mjsw            ''                         -1     Junction Sidewall grading coefficient
    25 Js              ''                         -1     Gate Saturation Current, A/m^2
    26 Tox             ''                          5     Oxide Thickness, m
    27 Nsub            ''                         -1     Substrate Doping, cm^(-3)
    28 Nss             ''                         -1     Surface State Density, cm^(-2)
    29 Nfs             ''                         -1     Fast Surface State Density, cm^(-2)
    30 Tpg             ''                         -1     Type of Gate Material: +1=op -1=same 0=Al
    31 Xj              ''                          5     Metallurgical Junction Depth, m
    32 Ld              ''                          5     Lateral Diffusion, m
    33 Uo              ''                         -1     Surface Mobility, cm^2/(V*s)
    34 Ucrit           ''                         -1     Critical Field for Mobility Degradation, V/cm
    35 Uexp            ''                         -1     Critical Field Exponent in Mobility Degradation
    36 Vmax            ''                         -1     Maximum Drift Velocity of Carriers, m/s
    37 Xqc             ''                         -1     Coefficient of Channel Charge Share
    38 Kf              ''                         -1     Flicker Noise Coefficient
    39 Af              ''                         -1     Flicker Noise Exponent
    40 Fc              ''                         -1     Forward-bias Depletion Cap. Coefficient
    41 Delta           ''                         -1     Width Effect on Threshold Voltage
    42 Theta           ''                         -1     Mobility Modulation, 1/V
    43 Eta             ''                         -1     Static Feedback
    44 Kappa           ''                         -1     Saturation Field Factor
    45 Kappag          ''                         -1     Field Correction Factor Gate Drive Dependence
    46 Xmu             ''                         -1     Subthreshold Fitting Model Parameter for NMOD
    47 Rg              ''                          1     Gate Resistance, Ohm
    48 Rds             ''                          1     Drain-Source Shunt Resistance, Ohm
    49 Tnom            ''                         12     Nominal ambient temperature, Celsius
    50 N               ''                         -1     Bulk P-N Emission Coefficient
    51 Tt              ''                         -1     Bulk P-N Transit Time
    52 Ffe             ''                         -1     Flicker noise frequency exponent
    53 Imax            ''                         10     Explosion current, A
    54 wVsubfwd        ''                          9     Substrate Junction Forward Bias (warning), V
    55 wBvsub          ''                          9     Substrate Junction Reverse Breakdown Voltage (warning), V
    56 wBvg            ''                          9     Gate Oxide Breakdown Voltage (warning), V
    57 wBvds           ''                          9     Drain-Source Breakdown Voltage (warning), V
    58 wIdsmax         ''                         10     Maximum Drain-Source Current (warning), A
    59 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

LEVEL3_Model LEVEL3_Model 55
     1 NMOS            y_n1                       -1     Model Type - YES or NO
     2 PMOS            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          3                          -1     1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
     4 Capmod          1                          -1     0=NO CAP 1=CMEYER/WARD 2=SMOOTH 3=QMEYER
     5 Vto             ''                          9     Zero-Bias Threshold Voltage, V
     6 Kp              ''                         -1     Transconductance parameter, A/V^2
     7 Gamma           ''                         -1     Bulk Threshold parameter, V^(1/2)
     8 Phi             ''                          9     Surface Potential, V
     9 Rd              ''                          1     Drain Resistance, Ohm
    10 Rs              ''                          1     Source Resistance, Ohm
    11 Cbd             ''                          4     B-D Zero-bias Junction Cap., F
    12 Cbs             ''                          4     B-S Zero-bias Junction Cap., F
    13 Is              ''                         10     Gate Saturation Current, A
    14 Pb              ''                          9     Bulk Junction Potential, V
    15 Cgso            ''                         -1     G-S Overlap Cap., F/m
    16 Cgdo            ''                         -1     G-D Overlap Cap., F/m
    17 Cgbo            ''                         -1     G-B Overlap Cap., F/m
    18 Rsh             ''                         -1     Drain and Source Diffusion Sheet Resistance, Ohm/Sq
    19 Cj              ''                         -1     Zero-bias Bulk Junction Cap., F/m^2
    20 Mj              ''                         -1     Junction  grading coefficient
    21 Cjsw            ''                         -1     Zero-bias Bulk Junction Sidewall Cap., F/m
    22 Mjsw            ''                         -1     Junction Sidewall grading coefficient
    23 Js              ''                         -1     Gate Saturation Current, A/m^2
    24 Tox             ''                          5     Oxide Thickness, m
    25 Nsub            ''                         -1     Substrate Doping, cm^(-3)
    26 Nss             ''                         -1     Surface State Density, cm^(-2)
    27 Nfs             ''                         -1     Fast Surface State Density, cm^(-2)
    28 Tpg             ''                         -1     Type of Gate Material: +1=op -1=same 0=Al
    29 Xj              ''                          5     Metallurgical Junction Depth, m
    30 Ld              ''                          5     Lateral Diffusion, m
    31 Uo              ''                         -1     Surface Mobility, cm^2/(V*s)
    32 Ucrit           ''                         -1     Critical Field for Mobility Degradation, V/cm
    33 Uexp            ''                         -1     Critical Field Exponent in Mobility Degradation
    34 Vmax            ''                         -1     Maximum Drift Velocity of Carriers, m/s
    35 Xqc             ''                         -1     Coefficient of Channel Charge Share
    36 Kf              ''                         -1     Flicker Noise Coefficient
    37 Af              ''                         -1     Flicker Noise Exponent
    38 Fc              ''                         -1     Forward-bias Depletion Cap. Coefficient
    39 Delta           ''                         -1     Width Effect on Threshold Voltage
    40 Theta           ''                         -1     Mobility Modulation, 1/V
    41 Eta             ''                         -1     Static Feedback
    42 Kappa           ''                         -1     Saturation Field Factor
    43 Rg              ''                          1     Gate Resistance, Ohm
    44 Rds             ''                          1     Drain-Source Shunt Resistance, Ohm
    45 Tnom            ''                         12     Nominal ambient temperature, Celsius
    46 N               ''                         -1     Bulk P-N Emission Coefficient
    47 Tt              ''                         -1     Bulk P-N Transit Time
    48 Ffe             ''                         -1     Flicker noise frequency exponent
    49 Imax            ''                         10     Explosion current, A
    50 wVsubfwd        ''                          9     Substrate Junction Forward Bias (warning), V
    51 wBvsub          ''                          9     Substrate Junction Reverse Breakdown Voltage (warning), V
    52 wBvg            ''                          9     Gate Oxide Breakdown Voltage (warning), V
    53 wBvds           ''                          9     Drain-Source Breakdown Voltage (warning), V
    54 wIdsmax         ''                         10     Maximum Drain-Source Current (warning), A
    55 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

LOS_Link  LOS_Link  17
     1 CenterFreq      1GHz                        0     Link Center Frequency
     2 BW              100MHz                      0     Link Bandwidth
     3 TxGain          0dB                        13     Transmitting Antenna Gain, in dB
     4 TxVSWR          1                          -1     Transmitting Antenna VSWR
     5 TxParabolaD     ''                          5     Transmitting Parabolic Antenna Diameter. Overwrite TxGain
     6 TxEfficiency    ''                         -1     Transmitting Parabolic Antenna Efficiency. Overwrite TxGain
     7 RxGain          0dB                        13     Receiving Antenna Gain, in dB
     8 RxVSWR          1                          -1     Receiving Antenna VSWR
     9 RxParabolaD     ''                          5     Receiving Parabolic Antenna Diameter. Overwrite RxGain
    10 RxEfficiency    ''                         -1     Receiving Parabolic Antenna Efficiency. Overwrite RxGain
    11 RxNoiseTemp     150C                       12     Receiving Antenna Noise Temperature, in degree-Kelvin
    12 PathLength      (10km)                     11     Line-Of-Sight Path Length
    13 NotchFreq       ''                          0     Notch Frequency due to Ground Reflection Path Interference
    14 NotchDepth      ''                         13     Notch Depth w.r.t. LOS Signal, in dB
    15 DeltaDelay      ''                          6     Time Delay of Ground Reflection Path w.r.t. LOS Path
    16 Z1              50ohm                       1     Transmitting Antenna Reference Impedance
    17 Z2              50ohm                       1     Transmitting Antenna Reference Impedance
END_ELEMENT

LPF_Bessel LPF_Bessel 11
     1 Fpass           1GHz                        0     Passband Edge Frequency
     2 Apass           3dB                        13     Attenuation at Passband Edge, in dB
     3 GDpass          0.9                        -1     Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
     4 StopType        OPEN                       -2     Input is open or short for stopband
     5 MaxRej          ''                         13     Maximum Rejection Level , in dB
     6 N               0                          -1     Filter Order (if N > 0, it overwrites GDpass)
     7 IL              0dB                        13     Passband Insertion Loss, in dB
     8 Qu              1E308                      -1     Unloaded Quality Factor
     9 Z1              50ohm                       1     Input Port Reference Impedance
    10 Z2              50ohm                       1     Output Port Reference Impedance
    11 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

LPF_Butterworth LPF_Butterworth 12
     1 Fpass           1GHz                        0     Passband Edge Frequency
     2 Apass           3dB                        13     Attenuation at Passband Edge, in dB
     3 Fstop           1.2GHz                      0     Stopband Edge Frequency
     4 Astop           20dB                       13     Attenuation at Stopband Edge, in dB
     5 StopType        OPEN                       -2     Input is open or short for stopband
     6 MaxRej          ''                         13     Maximum Rejection Level , in dB
     7 N               0                          -1     Filter Order (if N > 0, it overwrites Fstop and Astop)
     8 IL              0dB                        13     Passband Insertion Loss, in dB
     9 Qu              1E308                      -1     Unloaded Quality Factor
    10 Z1              50ohm                       1     Input Port Reference Impedance
    11 Z2              50ohm                       1     Output Port Reference Impedance
    12 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

LPF_Chebyshev LPF_Chebyshev 13
     1 Fpass           1GHz                        0     Passband Edge Frequency
     2 Apass           1dB                        13     Attenuation at Passband Edge, in dB
     3 Ripple          1dB                        13     Passband Ripple, in dB
     4 Fstop           1.2GHz                      0     Stopband Edge Frequency
     5 Astop           20dB                       13     Attenuation at Stopband Edge, in dB
     6 StopType        OPEN                       -2     Input is open or short for stopband
     7 MaxRej          ''                         13     Maximum Rejection Level , in dB
     8 N               0                          -1     Filter Order (if N > 0, it overwrites Fstop and Astop)
     9 IL              0dB                        13     Passband Insertion Loss, in dB
    10 Qu              1E308                      -1     Unloaded Quality Factor
    11 Z1              50ohm                       1     Input Port Reference Impedance
    12 Z2              50ohm                       1     Output Port Reference Impedance
    13 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

LPF_Elliptic LPF_Elliptic 12
     1 Fpass           1GHz                        0     Passband Edge Frequency
     2 Ripple          1dB                        13     Passband Ripple, in dB
     3 Fstop           1.2GHz                      0     Stopband Edge Frequency
     4 Astop           20dB                       13     Attenuation at Stopband Edge, in dB
     5 StopType        OPEN                       -2     Input is open or short for stopband
     6 MaxRej          ''                         13     Maximum Rejection Level , in dB
     7 N               0                          -1     Filter Order (if N > 0, it overwrites Fstop and Astop)
     8 IL              0dB                        13     Passband Insertion Loss, in dB
     9 Qu              1E308                      -1     Unloaded Quality Factor
    10 Z1              50ohm                       1     Input Port Reference Impedance
    11 Z2              50ohm                       1     Output Port Reference Impedance
    12 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

LPF_GMSK  LPF_GMSK   5
     1 BT              0.3                        -1     Bandwidth-Time Product of Gaussian Filter
     2 BitRate         270.833KHz                  0     Bit rate defining bandwidth of filter
     3 DelayBits       5                          -1     Number of bits delayed by the filter
     4 Gain            1.0                        -1     Gain Factor
     5 Zout            50ohm                       1     Output Impedance
END_ELEMENT

LPF_Gaussian LPF_Gaussian 11
     1 Fpass           1GHz                        0     Passband Edge Frequency
     2 Apass           3dB                        13     Attenuation at Passband Edge, in dB
     3 GDpass          0.9                        -1     Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
     4 StopType        OPEN                       -2     Input is open or short for stopband
     5 MaxRej          ''                         13     Maximum Rejection Level , in dB
     6 N               0                          -1     Filter Order (if N > 0, it overwrites GDpass)
     7 IL              0dB                        13     Passband Insertion Loss, in dB
     8 Qu              1E308                      -1     Unloaded Quality Factor
     9 Z1              50ohm                       1     Input Port Reference Impedance
    10 Z2              50ohm                       1     Output Port Reference Impedance
    11 Temp            ''                         12     Temperature in Degree Celsius
END_ELEMENT

LPF_PoleZero LPF_PoleZero  7
     1 Poles           'list(-0.7+j*0.7, -0.7-j*0.7)' -1     List of Complex Poles
     2 Zeros           ''                         -1     List of Complex Zeros
     3 Gain            1.0                        -1     Gain Factor
     4 Fpass           1GHz                        0     Passband Edge Frequency
     5 StopType        OPEN                       -2     Input is open or short for stopband
     6 Z1              50ohm                       1     Input Port Reference Impedance
     7 Z2              50ohm                       1     Output Port Reference Impedance
END_ELEMENT

LPF_Polynomial LPF_Polynomial  7
     1 Numerator       1                          -1     List of Numerator Coefficients
     2 Denominator     list(1,1.4,1)              -1     List of Denominator Coefficients
     3 Gain            1.0                        -1     Gain Factor
     4 Fpass           1GHz                        0     Passband Edge Frequency
     5 StopType        OPEN                       -2     Input is open or short for stopband
     6 Z1              50ohm                       1     Input Port Reference Impedance
     7 Z2              50ohm                       1     Output Port Reference Impedance
END_ELEMENT

LPF_RaisedCos LPF_RaisedCos  9
     1 Alpha           0.35                       -1     Rolloff factor defining filters excess bandwidth, 0 <= Alpha <= 1
     2 SymbolRate      24.3KHz                     0     Digital symbol rate defining filters bandwidth
     3 DelaySymbols    5                          -1     Number of symbols delayed by the filter
     4 Exponent        0.5                        -1     Exponent Factor ( 0<= Exponent <= 1 )
     5 DutyCycle       100                        -1     Pulse duty cycle in percent, used for sinc(x) correction
     6 SincE           y_n0                       -2     Yes for applying Exponent Factor on sinc(x) correction
     7 Gain            1.0                        -1     Gain Factor
     8 Zout            50ohm                       1     Output Impedance
     9 WindowType      0                          -1     Window Type, 0=None, 1=Hann, 2=Hamming
END_ELEMENT

LQ_Conn   LQ_Conn    5
     1 L               1.0nH                       3     Inductance
     2 Q               50.0                       -1     Quality factor
     3 F               100.0MHz                    0     Reference frequency for q
     4 Mode            loss_freq                  -1     Loss Mode for This Device
     5 Temp            ''                         12     Temperature
END_ELEMENT

LQ_Pad1   LQ_Pad1    8
     1 L               1.0nH                       3     Inductance
     2 Q               50.0                       -1     Quality factor
     3 F               100.0MHz                    0     Reference frequency for q
     4 Mode            loss_freq                  -1     Loss Mode for This Device
     5 Temp            ''                         12     Temperature
     6 W               25.0mils                    5     W
     7 S               10.0mils                    5     S
     8 L1              50.0mils                    5     L
END_ELEMENT

LQ_Space  LQ_Space   6
     1 L               1.0nH                       3     Inductance
     2 Q               50.0                       -1     Quality factor
     3 F               100.0MHz                    0     Reference frequency for q
     4 Mode            loss_freq                  -1     Loss Mode for This Device
     5 Temp            ''                         12     Temperature
     6 L1              50.0mils                    5     L
END_ELEMENT

LSSP      LSSP      48
     1 MaxOrder        4                          -1     Maximum combined order to be considered
     2 Freq            1.0GHz                      0     Frequency of fundamental
     3 Order           3                          -1     Maximum order of fundamental to be considered
     4 NestLevel       2                          -1     Levels of subcircuits to output
     5 StatusLevel     2                          -1     Degree of annotation
     6 FundOversample  1                          -1     Oversampling ratio for FFT
     7 Oversample      ''                         -1     Oversampling ratio for FFT (repeated)
     8 PackFFT         ''                         -1     Pack FFT in multi-tone analysis
     9 MaxIters        10                         -1     Max number of iterations
    10 GuardThresh     ''                         -1     Guard threshold
    11 SamanskiiConstant 2                          -1     Samanskii constant
    12 Restart         No                         -1     Do not use last solution as initial guess
    13 ArcLevelMaxStep 0.0                        -1     Maximum arc-length step for source-level continuation
    14 MaxStepRatio    100                        -1     Ratio of maximum to given number of steps
    15 MaxShrinkage    1.0e-5                     -1     Maximum step shrinkage
    16 OutputAllSolns  ''                         -1     Output spectra at all computed steps when sweeping
    17 ArcMaxStep      0.0                        -1     Maximum arc-length step
    18 ArcMinValue     ''                         -1     Minimum value for parameter during arclength continuation
    19 ArcMaxValue     ''                         -1     Maximum value for parameter during arclength continuation
    20 UseKrylov       ''                         -1     Use Krylov solver
    21 UseInitialAWHB  ''                         -1     Use initial AWHB stage before Krylov
    22 AWHB_WindowSize ''                         -1     AWHB window size
    23 GMRES_Restart   ''                         -1     GMRES iterations before auto-restart
    24 KrylovUsePacking ''                         -1     Use Krylov spectral packing
    25 KrylovPackingThresh ''                         -1     Krylov bandwidth threshold
    26 KrylovTightTol  ''                         -1     GMRES tolerance
    27 KrylovLooseTol  ''                         -1     Loose tolerance for Krylov loop
    28 KrylovLooseIters ''                         -1     Min number of iterations to invoke loose tolerance
    29 KrylovMaxIters  ''                         -1     Maximum number of GMRES iterations
    30 GMRES_Orthog    ''                         -1     Re-orthogonalize at every GMRES iteration
    31 OutputBudgetIV  ''                         -1     Output top-level pin currents and voltages
    32 CalcS_Params    Yes                        -1     Calculate large-signal S-params
    33 LSSP_FreqAtPort ''                          0     Frequency to calculate at port (repeatable)
    34 SweepVar        ''                         -1     Name of variable or parameter to be swept
    35 UseSweepPlan    ''                         -1     Flag to indicate use of SweepPlan
    36 SweepPlan       ''                         -1     SweepPlan instance path name for sweep values
    37 Start           0                          -1     Start value
    38 Stop            100                        -1     Stop value
    39 Step            1                          -1     Step value
    40 Center          ''                         -1     Center value 
    41 Span            ''                         -1     Span
    42 Lin             ''                         -1     Linear sweep 
    43 Dec             ''                         -1     Number of points per decade
    44 Log             ''                         -1     Log sweep
    45 Reverse         ''                         -1     Reverse sweep
    46 Pt              ''                          0     Single point
    47 Sort            'LINEAR START STEP'        -1     Sort values
    48 Other           ''                         -1     Output string to netlist
END_ELEMENT

L_Conn    L_Conn     1
     1 L               1.0nH                       3     Inductance
END_ELEMENT

L_Pad1    L_Pad1     4
     1 L               1.0nH                       3     Inductance
     2 W               25.0mils                    5     W
     3 S               10.0mils                    5     S
     4 L1              50.0mils                    5     L
END_ELEMENT

L_Space   L_Space    2
     1 L               1.0nH                       3     Inductance
     2 L1              50.0mils                    5     L
END_ELEMENT

L_StabCircle L_StabCircle  1
     1 Function        list(our_l_stabcir=l_stab_circle(S,51)) -1     l_stab_circle(2x2 S_matrix,num_of_pts)
END_ELEMENT

LogACDemod LogACDemod  3
     1 CurrentSlope    1.e-3                      -1     Gradient of transfer characteristic in Amperes/decade
     2 VoltIntercept   1.e-3V                      9     Vin for zero output
     3 Z1              50.ohm                      1     Reference Impedance for Port1
END_ELEMENT

LogDC     LogDC      3
     1 VoltSlope       1.e-3                      -1     Gradient of transfer characteristic in Volts/decade
     2 VoltIntercept   1.e-3V                      9     Vin for zero output
     3 Z1              50.ohm                      1     Reference Impedance for Port1
END_ELEMENT

LogSuccDetect LogSuccDetect  4
     1 NumStages       5                          -1     Number of stages
     2 StageGain       10.dB                      13     Gain per stage in dB
     3 CurrentSlope    1.e-3                      -1     Gradient of transfer characteristic in Amperes/decade
     4 Z1              50.ohm                      1     Reference Impedance for Port1
END_ELEMENT

LogTrue   LogTrue    4
     1 NumStages       5                          -1     Number of stages
     2 StageGain       10.dB                      13     Gain per stage in dB
     3 VoltLimit       1.V                         9     Limiting voltage of each stage
     4 Z1              50.ohm                      1     Reference Impedance for Port1
END_ELEMENT

MACLIN    MACLIN    10
     1 Subst           MSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Width of conductor 1
     3 W2              10.0mils                    5     Width of conductor 2
     4 S               5.0mils                     5     Conductor spacing
     5 L               100.0mils                   5     Conductor length
     6 Temp            ''                         12     Physical temperature
     7 WA              10.0mils                    5     (for Layout option) Width of line that connects to pin 1
     8 WB              10.0mils                    5     (for Layout option) Width of line that connects to pin 2
     9 WC              10.0mils                    5     (for Layout option) Width of line that connects to pin 3
    10 WD              10.0mils                    5     (for Layout option) Width of line that connects to pin 4
END_ELEMENT

MACLIN3   MACLIN3   12
     1 Subst           MSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Width of conductor 1
     3 W2              15.0mils                    5     Width of conductor 2
     4 W3              15.0mils                    5     Width of conductor 3
     5 S1              8.0mils                     5     Spacing between conductors 1 and 2
     6 S2              12.0mils                    5     Spacing between conductors 2 and 3
     7 L               100.0mils                   5     Conductor length
     8 Temp            ''                         12     Physical temperature
     9 WA              10.0mils                    5     (for Layout option) Width of line that connects to pin 1
    10 WB              10.0mils                    5     (for Layout option) Width of line that connects to pin 3
    11 WC              10.0mils                    5     (for Layout option) Width of line that connects to pin 4
    12 WD              10.0mils                    5     (for Layout option) Width of line that connects to pin 6
END_ELEMENT

MBEND     MBEND      5
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor width
     3 Angle           90deg                       7     Angle of bend
     4 M               0.6                        -1     Miter fraction
     5 Temp            ''                         12     Physical temperature
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MBEND2    MBEND2     3
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor width
     3 Temp            ''                         12     Physical temperature
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MBEND3    MBEND3     3
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor width
     3 Temp            ''                         12     Physical temperature
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MBSTUB    MBSTUB     6
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Width of feed line
     3 Ro              60.0mils                    5     Outer radius of circular sector
     4 Angle           60deg                       7     Angle subtended by circular sector
     5 D               3.0mils                     5     Insertion depth of circular sector in feed line
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

MCFIL     MCFIL      7
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line width
     3 S               10.0mils                    5     Spacing between lines
     4 L               100.0mils                   5     Line length
     5 Temp            ''                         12     Physical temperature
     6 W1              20.0mils                    5     (for Layout option) Width of line that connects to pin 1
     7 W2              20.0mils                    5     (for Layout option) Width of line that connects to pin 2
END_ELEMENT

MCLIN     MCLIN      9
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line width
     3 S               10.0mils                    5     Spacing between lines
     4 L               100.0mils                   5     Line length
     5 Temp            ''                         12     Physical temperature
     6 W1              20.0mils                    5     (for Layout option) Width of line that connects to pin 1
     7 W2              20.0mils                    5     (for Layout option) Width of line that connects to pin 2
     8 W3              20.0mils                    5     (for Layout option) Width of line that connects to pin 3
     9 W4              20.0mils                    5     (for Layout option) Width of line that connects to pin 4
END_ELEMENT

MCORN     MCORN      3
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor width
     3 Temp            ''                         12     Physical temperature
     4 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MCROS     MCROS      5
     1 Subst           MSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Conductor width at pin 1
     3 W2              50.0mils                    5     Conductor width at pin 2
     4 W3              25.0mils                    5     Conductor width at pin 3
     5 W4              50.0mils                    5     Conductor width at pin 4
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MCROSO    MCROSO     6
     1 Subst           MSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Conductor width at pin 1
     3 W2              50.0mils                    5     Conductor width at pin 2
     4 W3              25.0mils                    5     Conductor width at pin 3
     5 W4              50.0mils                    5     Conductor width at pin 4
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

MCURVE    MCURVE     5
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor width
     3 Angle           90deg                       7     Angle subtended by the bend
     4 Radius          100.0mils                   5     Radius (measured to strip centerline)
     5 Temp            ''                         12     Physical temperature
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MCURVE2   MCURVE2    6
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor width
     3 Angle           90deg                       7     Angle of bend
     4 Radius          100.0mils                   5     Radius (measured to strip centerline)
     5 Nmode           2                          -1     Number of modes
     6 Temp            ''                         12     Physical temperature
     7 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MEANDER_FINAL MEANDER_FINAL 25
     1 N               0                          -1     Number of points (not including mousepoint)
     2 W               10.0mils                    5     Width of meander line
     3 Subst           MSub1                      -1     Substrate
     4 Layer           smt_cond                   -1     Layer
     5 X0              0mils                       5     XOrigin of (U,V) -- not used in shape directly
     6 Y0              0mils                       5     YOrigin of (U,V) -- not used in shape directly
     7 AbsA            0deg                        7     Angle CCW of positive U axis with positive X axis -- not used in shape directly
     8 A               0deg                        7     Angle CCW between shape and PA's port angle
     9 CType           0                          -1     0=Mitre, 1=Radius, 2=Corner, 3=Free radius 
    10 MP              30                         -1     Mitre percentage
    11 R               5.0mils                     5     Circle endpoint radius
    12 PA              ''                         -2     Name of pin attached to the start of this meander line -- not used in shape directly
    13 PB              ''                         -2     Name of pin attached to the end of this meander line -- not used in shape directly
    14 StripType       MICROSTRIP                 -1     Type; can be MICROSTRIP or STRIPLINE
    15 FixedLength     0mils                       5     Placeholder for returned fixed length generated during shape calc
    16 MovableLength   0mils                       5     Placeholder for returned movable length generated during shape calc
    17 RF_REGION       ''                         -2     Region placeholder
    18 RF_MEANDER_VERSION rfc7                    -2     Version number placeholder
    19 RF_MEANDER_ID   ''                         -2     Meander ID placeholder
    20 'Meander Type'  0                          -1     0=meander line, 1=path, 2=polygon, 3=polyline, 4=circle
    21 npts            0                          -1     Number of points around the periphery
    22 npts_cl         0                          -1     Number of points on the centerline
    23 Clearance       0mils                       5     Placeholder for MEANDER_MOVABLE_CLR
    24 MAngle          -1deg                       7     Region angle when meander is added         
    25 TotalFixedLength     0mils                       5     Placeholder for returned fixed length generated during shape calc
END_ELEMENT

MEANDER_FIXED MEANDER_FIXED 15
     1 N               0                          -1     Number of points (not including mousepoint)
     2 W               10.0mils                    5     Width of meander line
     3 Subst           MSub1                      -1     Substrate
     4 Layer           smt_cond                   -1     Layer
     5 X0              0mils                       5     XOrigin of (U,V) -- not used in shape directly
     6 Y0              0mils                       5     YOrigin of (U,V) -- not used in shape directly
     7 AbsA            0deg                        7     Angle CCW of positive U axis with positive X axis -- not used in shape directly
     8 A               0deg                        7     Angle CCW between shape and PA's port angle
     9 CType           0                          -1     0=mitre, 1=circle, 2=square
    10 MP              30                         -1     Mitre percentage
    11 R               5.0mils                     5     Circle endpoint radius
    12 PA              ''                         -1     Name of pin attached to the start of this meander line -- not used in shape directly
    13 PB              ''                         -1     Name of pin attached to the end of this meander line -- not used in shape directly
    14 StripType       MICROSTRIP                 -1     Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE
    15 FixedLength     0mils                       5     Placeholder for returned fixed length generated during shape calc
    16 TotalFixedLength     0mils                  5     Placeholder for returned fixed length generated during shape calc
END_ELEMENT

MEANDER_MOVABLE MEANDER_MOVABLE 16
     1 N               0                          -1     Number of points (not including mousepoint)
     2 W               10.0mils                    5     Width of meander line
     3 Subst           MSub1                      -1     Substrate
     4 Layer           smt_cond                   -1     Layer
     5 X0              0mils                       5     XOrigin of (U,V) -- not used in shape directly
     6 Y0              0mils                       5     YOrigin of (U,V) -- not used in shape directly
     7 AbsA            0deg                        7     Angle CCW of positive U axis with positive X axis -- not used in shape directly
     8 A               0deg                        7     Angle CCW between shape and PA's port angle
     9 CType           0                          -1     0=mitre, 1=circle, 2=square
    10 MP              30                         -1     Mitre percentage
    11 R               5.0mils                     5     Circle endpoint radius
    12 PA              ''                         -1     Name of pin attached to the start of this meander line -- not used in shape directly
    13 PB              ''                         -1     Name of pin attached to the end of this meander line -- not used in shape directly
    14 StripType       MICROSTRIP                 -1     Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE
    15 MovableLength   0mils                       5     Placeholder for returned movable length generated during shape calc
    16 Clearance       0mils                       5     Placeholder for MEANDER_MOVABLE_CLR
END_ELEMENT

MEANDER_MOVABLE_CLR MEANDER_MOVABLE_CLR 16
     1 N               0                          -1     Number of points (not including mousepoint)
     2 W               10.0mils                    5     Width of meander line
     3 Subst           MSub1                      -1     Substrate
     4 Layer           smt_cond                   -1     Layer
     5 X0              0mils                       5     XOrigin of (U,V) -- not used in shape directly
     6 Y0              0mils                       5     YOrigin of (U,V) -- not used in shape directly
     7 AbsA            0deg                        7     Angle CCW of positive U axis with positive X axis -- not used in shape directly
     8 A               0deg                        7     Angle CCW between shape and PA's port angle
     9 CType           0                          -1     0=mitre, 1=circle, 2=square
    10 MP              30                         -1     Mitre percentage
    11 R               5.0mils                     5     Circle endpoint radius
    12 PA              ''                         -1     Name of pin attached to the start of this meander line -- not used in shape directly
    13 PB              ''                         -1     Name of pin attached to the end of this meander line -- not used in shape directly
    14 StripType       MICROSTRIP                 -1     Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE
    15 MovableLength   0mils                       5     Placeholder for returned movable length generated during shape calc
    16 Clearance       0mils                       5     Placeholder for MEANDER_MOVABLE_CLR
END_ELEMENT

MEXTRAM_Model MEXTRAM_Model 71
     1 NPN             y_n1                       -1     Model Type - YES or NO
     2 PNP             y_n0                       -1     Model Type - YES or NO
     3 Release         503                        -1     Selection of MEXTRAM Release 503, 504, 505
     4 Exmod           yes                        -1     Flag for Extended Modeling of the Reverse Current Gain
     5 Exphi           yes                        -1     Flag for Distributed High Frequency Effects in Transient
     6 Exavl           yes                        -1     Flag of Extended Modeling of Avalanche Currents
     7 Is              ''                         -1     Collector-Emitter Saturation Current, A/m^2
     8 Bf              ''                         -1     Ideal Forward Current Gain
     9 Xibi            ''                         -1     Fraction of Ideal Base Current that belongs to the Sidewall
    10 Ibf             ''                         -1     Saturation Current of the Non-Ideal Forward Base Current, A/m^2
    11 Vlf             ''                          9     Cross-Over Voltage of the Non-Ideal Forward Base Current, V
    12 Ik              ''                         -1     High Injection Knee Current, A/m^2
    13 Bri             ''                         -1     Ideal Reverse Current Gain
    14 Ibr             ''                         -1     Saturation Current of the Non-Ideal Reverse Base Current, A/m^2
    15 Vlr             ''                          9     Cross-Over Voltage of the Non-Ideal Reverse Base Current, V
    16 Xext            ''                         -1     Part that depends on the Base-Collector Voltage Vbc1
    17 Qb0             ''                         -1     Base Charge at Zero Bias
    18 Eta             ''                         -1     Factor of the Built-in Field of the Base
    19 Avl             ''                         -1     Weak Avalanche Parameter
    20 Efi             ''                         -1     Electric Field Intercep
    21 Ihc             ''                         -1     Critial Current for Hot Carriers, A/m^2
    22 Rcc             ''                          1     Constant Part of the Collector Resistance, Ohms/m^2
    23 Rcv             ''                          1     RCV Resistance of the Unmodulated Epilayer, Ohms/m^2
    24 Scrcv           ''                          1     Space Charge Resistance of the Epilayer, Ohms/m^2
    25 Sfh             ''                         -1     Current Spreading Factor Epilayer
    26 Rbc             ''                          1     Constant Part of the Base Resistance, Ohms/m^2
    27 Rbv             ''                          1     Variable Part of the Base Resistance, Ohms/m^2
    28 Re              ''                          1     Emitter Resistance, Ohms/m^2
    29 Taune           ''                          6     Minimum Delay Time of Neutral and Emitter Charge, S
    30 Mtau            ''                         -1     Non-Ideality Factor of the Neutral and Emitter Charge, S
    31 Cje             ''                          4     B-E Zero-bias Junction Cap., F/m^2
    32 Vde             ''                          9     B-E Diffusion Voltage, V
    33 Pe              ''                         -1     B-E Grading Coefficient
    34 Xcje            ''                         -1     Fraction of B-E Capacitance that belongs to the Sidewall
    35 Cjc             ''                          4     B-C Zero-bias Junction Cap., F/m^2
    36 Vdc             ''                          9     B-C Diffusion Voltage, V
    37 Pc              ''                         -1     B-C Grading Coefficient
    38 Xp              ''                         -1     Constant Part of Cjc
    39 Mc              ''                         -1     Collector Current Modulation Coefficient
    40 Xcjc            ''                         -1     Fraction of B-C Capacitance Under the Emitter Area
    41 Tref            ''                         12     Reference Temperature, C
    42 Dta             ''                         12     Difference of the Device Temperature and the Ambient Temperature, C
    43 Vge             ''                          9     Emitter Band-Gap Voltage, eV
    44 Vgb             ''                          9     Base Band-Gap Voltage, eV
    45 Vgc             ''                          9     Collector Band-Gap Voltage, eV
    46 Vgj             ''                          9     Recombination E-B Junction Band-Gap Voltage, eV
    47 Vi              ''                          9     Ionization Voltage Base Dope, V
    48 Na              ''                         -1     Maximum Base Dope Concentration
    49 Er              ''                         -1     Temperature Coefficient of Vlf and Vlr
    50 Ab              ''                         -1     Temperature Coefficient Resistivity Base
    51 Aepi            ''                         -1     Temperature Coefficient Resistivity of the Epilayer
    52 Aex             ''                         -1     Temperature Coefficient Resistivity of the Extrinsic Base
    53 Ac              ''                         -1     Temperature Coefficient Resistivity of the Buried Layer
    54 Kf              ''                         -1     Flicker Noise Coefficient Ideal Base Current
    55 Kfn             ''                         -1     Flicker Noise Coefficient Non-Ideal Base Current
    56 Af              ''                         -1     Flicker Noise Exponent
    57 Iss             ''                         -1     Base-Substrate Saturation Current, A/m^2
    58 Iks             ''                         -1     Knee Substrate Current, A/m^2
    59 Cjs             ''                          4     C-S Zero-bias Junction Cap., F/m^2
    60 Vds             ''                          9     C-S Diffusion Voltage, V
    61 Ps              ''                         -1     C-S Grading Coefficient
    62 Vgs             ''                          9     Substrate Band-Gap Voltage, V
    63 As              ''                         -1     For Closed/Open Buried Layer
    64 wVsubfwd        ''                          9     Substrate Junction Forward Bias (warning), V
    65 wBvsub          ''                          9     Substrate Junction Reverse Breakdown Voltage (warning), V
    66 wBvbe           ''                          9     Base-Emitter Reverse Breakdown Voltage (warning), V
    67 wBvbc           ''                          9     Base-Collector Reverse Breakdown Voltage (warning), V
    68 wVbcfwd         ''                          9     Base-Collector Forward Bias (warning), V
    69 wIbmax          ''                         10     Maximum Base Current (warning), A
    70 wIcmax          ''                         10     Maximum Collector Current (warning), A
    71 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

MGAP      MGAP       4
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor width
     3 S               10.0mils                    5     Length of gap (spacing)
     4 Temp            ''                         12     Physical temperature
     5 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MICAP1    MICAP1     9
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               5.0mils                     5     Finger width
     3 G               5.0mils                     5     Gap between fingers
     4 Ge              5.0mils                     5     Gap at end of fingers
     5 L               50.0mils                    5     Length of overlapped region
     6 Np              3                          -1     Number of finger pairs
     7 Wt              25.0mils                    5     Width of the interconnect
     8 Wf              25.0mils                    5     Width of the feed line
     9 Temp            ''                         12     Physical temperature
END_ELEMENT

MICAP2    MICAP2     8
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               5.0mils                     5     Finger width
     3 G               5.0mils                     5     Gap between fingers
     4 Ge              5.0mils                     5     Gap at end of fingers
     5 L               50.0mils                    5     Length of overlapped region
     6 Np              3                          -1     Number of finger pairs
     7 Wt              25.0mils                    5     Width of the interconnect
     8 Temp            ''                         12     Physical temperature
END_ELEMENT

MICAP3    MICAP3     9
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               5.0mils                     5     Finger width
     3 G               5.0mils                     5     Gap between fingers
     4 Ge              5.0mils                     5     Gap at end of fingers
     5 L               50.0mils                    5     Length of overlapped region
     6 Np              3                          -1     Number of finger pairs
     7 Wt              25.0mils                    5     Width of the interconnect
     8 Wf              25.0mils                    5     Width of the feed line
     9 Temp            ''                         12     Physical temperature
END_ELEMENT

MICAP4    MICAP4     8
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               5.0mils                     5     Finger width
     3 G               5.0mils                     5     Gap between fingers
     4 Ge              5.0mils                     5     Gap at end of fingers
     5 L               50.0mils                    5     Length of overlapped region
     6 Np              3                          -1     Number of finger pairs
     7 Wt              25.0mils                    5     Width of the interconnect
     8 Temp            ''                         12     Physical temperature
END_ELEMENT

ML10CTL_V ML10CTL_V 31
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W[1]            10mils                      5     Width
     4 S[1]            5mils                       5     Width
     5 W[2]            10mils                      5     Width
     6 S[2]            5mils                       5     Width
     7 W[3]            10mils                      5     Width
     8 S[3]            5mils                       5     Width
     9 W[4]            10mils                      5     Width
    10 S[4]            5mils                       5     Width
    11 W[5]            10mils                      5     Width
    12 S[5]            5mils                       5     Width
    13 W[6]            10mils                      5     Width
    14 S[6]            5mils                       5     Width
    15 W[7]            10mils                      5     Width
    16 S[7]            5mils                       5     Width
    17 W[8]            10mils                      5     Width
    18 S[8]            5mils                       5     Width
    19 W[9]            10mils                      5     Width
    20 S[9]            5mils                       5     Width
    21 W[10]           10mils                      5     Width
    22 Layer[1]        1                          -2     Layer 1
    23 Layer[2]        1                          -2     Layer 2
    24 Layer[3]        1                          -2     Layer 3
    25 Layer[4]        1                          -2     Layer 4
    26 Layer[5]        1                          -2     Layer 5
    27 Layer[6]        1                          -2     Layer 6
    28 Layer[7]        1                          -2     Layer 7
    29 Layer[8]        1                          -2     Layer 8
    30 Layer[9]        1                          -2     Layer 9
    31 Layer[10]       1                          -2     Layer 10
END_ELEMENT

ML16CTL_C ML16CTL_C  5
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

ML1CTL_C  ML1CTL_C   4
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W               10mils                      5     Width
     4 Layer           1                          -2     Layer
END_ELEMENT

ML2CTL_C  ML2CTL_C   5
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

ML2CTL_V  ML2CTL_V   7
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W[1]            10mils                      5     Width
     4 S[1]            5mils                       5     Width
     5 W[2]            10mils                      5     Width
     6 Layer[1]        1                          -2     Layer 1
     7 Layer[2]        1                          -2     Layer 2
END_ELEMENT

ML3CTL_C  ML3CTL_C   5
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

ML3CTL_V  ML3CTL_V  10
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W[1]            10mils                      5     Width
     4 S[1]            5mils                       5     Width
     5 W[2]            10mils                      5     Width
     6 S[2]            5mils                       5     Width
     7 W[3]            10mils                      5     Width
     8 Layer[1]        1                          -2     Layer 1
     9 Layer[2]        1                          -2     Layer 2
    10 Layer[3]        1                          -2     Layer 3
END_ELEMENT

ML4CTL_C  ML4CTL_C   5
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

ML4CTL_V  ML4CTL_V  13
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W[1]            10mils                      5     Width
     4 S[1]            5mils                       5     Width
     5 W[2]            10mils                      5     Width
     6 S[2]            5mils                       5     Width
     7 W[3]            10mils                      5     Width
     8 S[3]            5mils                       5     Width
     9 W[4]            10mils                      5     Width
    10 Layer[1]        1                          -2     Layer 1
    11 Layer[2]        1                          -2     Layer 2
    12 Layer[3]        1                          -2     Layer 3
    13 Layer[4]        1                          -2     Layer 4
END_ELEMENT

ML5CTL_C  ML5CTL_C   5
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

ML5CTL_V  ML5CTL_V  16
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W[1]            10mils                      5     Width
     4 S[1]            5mils                       5     Width
     5 W[2]            10mils                      5     Width
     6 S[2]            5mils                       5     Width
     7 W[3]            10mils                      5     Width
     8 S[3]            5mils                       5     Width
     9 W[4]            10mils                      5     Width
    10 S[4]            5mils                       5     Width
    11 W[5]            5mils                       5     Width
    12 Layer[1]        1                          -2     Layer 1
    13 Layer[2]        1                          -2     Layer 2
    14 Layer[3]        1                          -2     Layer 3
    15 Layer[4]        1                          -2     Layer 4
    16 Layer[5]        1                          -2     Layer 5
END_ELEMENT

ML6CTL_C  ML6CTL_C   5
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

ML6CTL_V  ML6CTL_V  19
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W[1]            10mils                      5     Width
     4 S[1]            5mils                       5     Width
     5 W[2]            10mils                      5     Width
     6 S[2]            5mils                       5     Width
     7 W[3]            10mils                      5     Width
     8 S[3]            5mils                       5     Width
     9 W[4]            10mils                      5     Width
    10 S[4]            5mils                       5     Width
    11 W[5]            10mils                      5     Width
    12 S[5]            5mils                       5     Width
    13 W[6]            10mils                      5     Width
    14 Layer[1]        1                          -2     Layer 1
    15 Layer[2]        1                          -2     Layer 2
    16 Layer[3]        1                          -2     Layer 3
    17 Layer[4]        1                          -2     Layer 4
    18 Layer[5]        1                          -2     Layer 5
    19 Layer[6]        1                          -2     Layer 6
END_ELEMENT

ML7CTL_C  ML7CTL_C   5
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

ML7CTL_V  ML7CTL_V  22
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W[1]            10mils                      5     Width
     4 S[1]            5mils                       5     Width
     5 W[2]            10mils                      5     Width
     6 S[2]            10mils                      5     Width
     7 W[3]            10mils                      5     Width
     8 S[3]            5mils                       5     Width
     9 W[4]            10mils                      5     Width
    10 S[4]            5mils                       5     Width
    11 W[5]            10mils                      5     Width
    12 S[5]            5mils                       5     Width
    13 W[6]            10mils                      5     Width
    14 S[6]            5mils                       5     Width
    15 W[7]            10mils                      5     Width
    16 Layer[1]        1                          -2     Layer 1
    17 Layer[2]        1                          -2     Layer 2
    18 Layer[3]        1                          -2     Layer 3
    19 Layer[4]        1                          -2     Layer 4
    20 Layer[5]        1                          -2     Layer 5
    21 Layer[6]        1                          -2     Layer 6
    22 Layer[7]        1                          -2     Layer 7
END_ELEMENT

ML8CTL_C  ML8CTL_C   5
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

ML8CTL_V  ML8CTL_V  25
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W[1]            10mils                      5     Width
     4 S[1]            5mils                       5     Width
     5 W[2]            10mils                      5     Width
     6 S[2]            5mils                       5     Width
     7 W[3]            10mils                      5     Width
     8 S[3]            5mils                       5     Width
     9 W[4]            10mils                      5     Width
    10 S[4]            5mils                       5     Width
    11 W[5]            10mils                      5     Width
    12 S[5]            5mils                       5     Width
    13 W[6]            10mils                      5     Width
    14 S[6]            5mils                       5     Width
    15 W[7]            10mils                      5     Width
    16 S[7]            5mils                       5     Width
    17 W[8]            10mils                      5     Width
    18 Layer[1]        1                          -2     Layer 1
    19 Layer[2]        1                          -2     Layer 2
    20 Layer[3]        1                          -2     Layer 3
    21 Layer[4]        1                          -2     Layer 4
    22 Layer[5]        1                          -2     Layer 5
    23 Layer[6]        1                          -2     Layer 6
    24 Layer[7]        1                          -2     Layer 7
    25 Layer[8]        1                          -2     Layer 8
END_ELEMENT

ML9CTL_V  ML9CTL_V  28
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W[1]            10mils                      5     Width
     4 S[1]            5mils                       5     Width
     5 W[2]            10mils                      5     Width
     6 S[2]            5mils                       5     Width
     7 W[3]            10mils                      5     Width
     8 S[3]            5mils                       5     Width
     9 W[4]            10mils                      5     Width
    10 S[4]            5mils                       5     Width
    11 W[5]            10mils                      5     Width
    12 S[5]            5mils                       5     Width
    13 W[6]            10mils                      5     Width
    14 S[6]            5mils                       5     Width
    15 W[7]            10mils                      5     Width
    16 S[7]            5mils                       5     Width
    17 W[8]            10mils                      5     Width
    18 S[8]            5mils                       5     Width
    19 W[9]            10mils                      5     Width
    20 Layer[1]        1                          -2     Layer 1
    21 Layer[2]        1                          -2     Layer 2
    22 Layer[3]        1                          -2     Layer 3
    23 Layer[4]        1                          -2     Layer 4
    24 Layer[5]        1                          -2     Layer 5
    25 Layer[6]        1                          -2     Layer 6
    26 Layer[7]        1                          -2     Layer 7
    27 Layer[8]        1                          -2     Layer 8
    28 Layer[9]        1                          -2     Layer 9
END_ELEMENT

MLACRNR1  MLACRNR1   4
     1 Subst           Subst1                     -1     Substrate
     2 W1              10mils                      5     Width
     3 W2              10mils                      5     Width
     4 Layer           1                          -2     Layer
END_ELEMENT

MLACRNR16 MLACRNR16  6
     1 Subst           Subst1                     -1     Substrate
     2 W1              10mils                      5     Width
     3 S1              5mils                       5     Width
     4 W2              10mils                      5     Width
     5 S2              15mils                      5     Width
     6 Layer           1                          -2     Layer
END_ELEMENT

MLACRNR2  MLACRNR2   6
     1 Subst           Subst1                     -1     Substrate
     2 W1              10mils                      5     Width
     3 S1              5mils                       5     Width
     4 W2              10mils                      5     Width
     5 S2              15mils                      5     Width
     6 Layer           1                          -2     Layer
END_ELEMENT

MLACRNR3  MLACRNR3   6
     1 Subst           Subst1                     -1     Substrate
     2 W1              10mils                      5     Width
     3 S1              5mils                       5     Width
     4 W2              10mils                      5     Width
     5 S2              15mils                      5     Width
     6 Layer           1                          -2     Layer
END_ELEMENT

MLACRNR4  MLACRNR4   6
     1 Subst           Subst1                     -1     Substrate
     2 W1              10mils                      5     Width
     3 S1              5mils                       5     Width
     4 W2              10mils                      5     Width
     5 S2              15mils                      5     Width
     6 Layer           1                          -2     Layer
END_ELEMENT

MLACRNR5  MLACRNR5   6
     1 Subst           Subst1                     -1     Substrate
     2 W1              10mils                      5     Width
     3 S1              5mils                       5     Width
     4 W2              10mils                      5     Width
     5 S2              15mils                      5     Width
     6 Layer           1                          -2     Layer
END_ELEMENT

MLACRNR6  MLACRNR6   6
     1 Subst           Subst1                     -1     Substrate
     2 W1              10mils                      5     Width
     3 S1              5mils                       5     Width
     4 W2              10mils                      5     Width
     5 S2              15mils                      5     Width
     6 Layer           1                          -2     Layer
END_ELEMENT

MLACRNR7  MLACRNR7   6
     1 Subst           Subst1                     -1     Substrate
     2 W1              10mils                      5     Width
     3 S1              5mils                       5     Width
     4 W2              10mils                      5     Width
     5 S2              15mils                      5     Width
     6 Layer           1                          -2     Layer
END_ELEMENT

MLACRNR8  MLACRNR8   6
     1 Subst           Subst1                     -1     Substrate
     2 W1              10mils                      5     Width
     3 S1              5mils                       5     Width
     4 W2              10mils                      5     Width
     5 S2              15mils                      5     Width
     6 Layer           1                          -2     Layer
END_ELEMENT

MLANG     MLANG      6
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               10.0mils                    5     Conductor width
     3 S               10.0mils                    5     Conductor spacing
     4 L               100.0mils                   5     Conductor length
     5 Temp            ''                         12     Physical temperature
     6 W1              25.0mils                    5     (for Layout option) Width of transmission line that connect to pins 1,2,3,4
END_ELEMENT

MLANG6    MLANG6     6
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               10.0mils                    5     Conductor width
     3 S               10.0mils                    5     Conductor spacing
     4 L               100.0mils                   5     Conductor length
     5 Temp            ''                         12     Physical temperature
     6 W1              25.0mils                    5     (for Layout option) Width of transmission line that connect to pins 1,2,3,4
END_ELEMENT

MLANG8    MLANG8     6
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               10.0mils                    5     Conductor width
     3 S               10.0mils                    5     Conductor spacing
     4 L               100.0mils                   5     Conductor length
     5 Temp            ''                         12     Physical temperature
     6 W1              25.0mils                    5     (for Layout option) Width of transmission line that connect to pins 1,2,3,4
END_ELEMENT

MLCLE     MLCLE      4
     1 Subst           Subst1                     -1     Substrate
     2 DiamClear       15mils                      5     Diameter of Clearance
     3 DiamPad         5mils                       5     Diameter of Pad
     4 Layer           2                          -2     Layer
END_ELEMENT

MLCRNR1   MLCRNR1    4
     1 Subst           Subst1                     -1     Substrate
     2 Angle           90deg                       7     Angle
     3 W               10mils                      5     Width
     4 Layer           1                          -2     Layer
END_ELEMENT

MLCRNR16  MLCRNR16   5
     1 Subst           Subst1                     -1     Substrate
     2 Angle           90deg                       7     Angle
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

MLCRNR2   MLCRNR2    5
     1 Subst           Subst1                     -1     Substrate
     2 Angle           90deg                       7     Angle
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

MLCRNR3   MLCRNR3    5
     1 Subst           Subst1                     -1     Substrate
     2 Angle           90deg                       7     Angle
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

MLCRNR4   MLCRNR4    5
     1 Subst           Subst1                     -1     Substrate
     2 Angle           90deg                       7     Angle
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

MLCRNR5   MLCRNR5    5
     1 Subst           Subst1                     -1     Substrate
     2 Angle           90deg                       7     Angle
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

MLCRNR6   MLCRNR6    5
     1 Subst           Subst1                     -1     Substrate
     2 Angle           90deg                       7     Angle
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

MLCRNR7   MLCRNR7    5
     1 Subst           Subst1                     -1     Substrate
     2 Angle           90deg                       7     Angle
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

MLCRNR8   MLCRNR8    5
     1 Subst           Subst1                     -1     Substrate
     2 Angle           90deg                       7     Angle
     3 W               10mils                      5     Width
     4 S               5mils                       5     Spacing
     5 Layer           1                          -2     Layer
END_ELEMENT

MLCROSSOVER1 MLCROSSOVER1  5
     1 Subst           Subst1                     -1     Substrate
     2 W_Top           10mils                      5     Width
     3 W_Bottom        10mils                      5     Width
     4 LayerTop        1                          -2     Layer
     5 LayerBottom     2                          -1     Layer
END_ELEMENT

MLCROSSOVER2 MLCROSSOVER2  7
     1 Subst           Subst1                     -1     Substrate
     2 W_Top           10mils                      5     Width
     3 W_Bottom        10mils                      5     Width
     4 S_Top           10mils                      5     Width
     5 S_Bottom        10mils                      5     Width
     6 LayerTop        1                          -2     Layer
     7 LayerBottom     2                          -1     Layer
END_ELEMENT

MLCROSSOVER3 MLCROSSOVER3  7
     1 Subst           Subst1                     -1     Substrate
     2 W_Top           10mils                      5     Width
     3 W_Bottom        10mils                      5     Width
     4 S_Top           10mils                      5     Width
     5 S_Bottom        10mils                      5     Width
     6 LayerTop        1                          -2     Layer
     7 LayerBottom     2                          -1     Layer
END_ELEMENT

MLCROSSOVER4 MLCROSSOVER4  7
     1 Subst           Subst1                     -1     Substrate
     2 W_Top           10mils                      5     Width
     3 W_Bottom        10mils                      5     Width
     4 S_Top           10mils                      5     Width
     5 S_Bottom        10mils                      5     Width
     6 LayerTop        1                          -2     Layer
     7 LayerBottom     2                          -1     Layer
END_ELEMENT

MLCROSSOVER5 MLCROSSOVER5  7
     1 Subst           Subst1                     -1     Substrate
     2 W_Top           10mils                      5     Width
     3 W_Bottom        10mils                      5     Width
     4 S_Top           10mils                      5     Width
     5 S_Bottom        10mils                      5     Width
     6 LayerTop        1                          -2     Layer
     7 LayerBottom     2                          -1     Layer
END_ELEMENT

MLCROSSOVER6 MLCROSSOVER6  7
     1 Subst           Subst1                     -1     Substrate
     2 W_Top           10mils                      5     Width
     3 W_Bottom        10mils                      5     Width
     4 S_Top           10mils                      5     Width
     5 S_Bottom        10mils                      5     Width
     6 LayerTop        1                          -2     Layer
     7 LayerBottom     2                          -1     Layer
END_ELEMENT

MLCROSSOVER7 MLCROSSOVER7  7
     1 Subst           Subst1                     -1     Substrate
     2 W_Top           10mils                      5     Width
     3 W_Bottom        10mils                      5     Width
     4 S_Top           10mils                      5     Width
     5 S_Bottom        10mils                      5     Width
     6 LayerTop        1                          -2     Layer
     7 LayerBottom     2                          -1     Layer
END_ELEMENT

MLCROSSOVER8 MLCROSSOVER8  7
     1 Subst           Subst1                     -1     Substrate
     2 W_Top           10mils                      5     Width
     3 W_Bottom        10mils                      5     Width
     4 S_Top           10mils                      5     Width
     5 S_Bottom        10mils                      5     Width
     6 LayerTop        1                          -2     Layer
     7 LayerBottom     2                          -1     Layer
END_ELEMENT

MLEF      MLEF       6
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line width
     3 L               100.0mils                   5     Line length
     4 Wall1           ''                          5     Distance to 1st sidewall
     5 Wall2           ''                          5     Distance to 2nd sidewall
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

MLIN      MLIN       6
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line width
     3 L               100.0mils                   5     Line length
     4 Wall1           ''                          5     Distance to 1st sidewall
     5 Wall2           ''                          5     Distance to 2nd sidewall
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

MLJCROSS  MLJCROSS   6
     1 Subst           Subst1                     -1     Substrate
     2 W1              10mils                      5     Width
     3 W2              10mils                      5     Width
     4 W3              10mils                      5     Width
     5 W4              10mils                      5     Width
     6 Layer           1                          -2     Layer
END_ELEMENT

MLJGAP    MLJGAP     4
     1 Subst           Subst1                     -1     Substrate
     2 G               10mils                      5     Width
     3 W               10mils                      5     Width
     4 Layer           1                          -2     Layer
END_ELEMENT

MLJTEE    MLJTEE     5
     1 Subst           Subst1                     -1     Substrate
     2 W1              10mils                      5     Width
     3 W2              10mils                      5     Width
     4 W3              10mils                      5     Width
     5 Layer           1                          -2     Layer
END_ELEMENT

MLOC      MLOC       6
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line width
     3 L               100.0mils                   5     Line length
     4 Wall1           ''                          5     Distance to 1st sidewall
     5 Wall2           ''                          5     Distance to 2nd sidewall
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

MLOPENSTUB MLOPENSTUB  4
     1 Subst           Subst1                     -1     Substrate
     2 Length          100mils                     5     Length
     3 W               10mils                      5     Width
     4 Layer           1                          -2     Layer
END_ELEMENT

MLRADIAL1 MLRADIAL1  6
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        0mils                       5     VerticalOffset
     4 W_Left          20mils                      5     Width
     5 W_Right         10mils                      5     Width
     6 Layer           1                          -2     Layer
END_ELEMENT

MLRADIAL2 MLRADIAL2  8
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        0mils                       5     VerticalOffset
     4 W_Left          20mils                      5     Width
     5 W_Right         10mils                      5     Width
     6 S_Left          5mils                       5     Width
     7 S_Right         10mils                      5     Width
     8 Layer           1                          -2     Layer
END_ELEMENT

MLRADIAL3 MLRADIAL3  8
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        0mils                       5     VerticalOffset
     4 W_Left          20mils                      5     Width
     5 W_Right         10mils                      5     Width
     6 S_Left          5mils                       5     Width
     7 S_Right         10mils                      5     Width
     8 Layer           1                          -2     Layer
END_ELEMENT

MLRADIAL4 MLRADIAL4  8
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        0mils                       5     VerticalOffset
     4 W_Left          20mils                      5     Width
     5 W_Right         10mils                      5     Width
     6 S_Left          5mils                       5     Width
     7 S_Right         10mils                      5     Width
     8 Layer           1                          -2     Layer
END_ELEMENT

MLRADIAL5 MLRADIAL5  8
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        0mils                       5     VerticalOffset
     4 W_Left          20mils                      5     Width
     5 W_Right         10mils                      5     Width
     6 S_Left          5mils                       5     Width
     7 S_Right         10mils                      5     Width
     8 Layer           1                          -2     Layer
END_ELEMENT

MLSC      MLSC       6
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line width
     3 L               100.0mils                   5     Line length
     4 Wall1           ''                          5     Distance to 1st sidewall
     5 Wall2           ''                          5     Distance to 2nd sidewall
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

MLSLANTED1 MLSLANTED1  5
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        100mils                     5     VerticalOffset
     4 W               10mils                      5     Width
     5 Layer           1                          -2     Layer
END_ELEMENT

MLSLANTED16 MLSLANTED16  6
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        100mils                     5     VerticalOffset
     4 W               10mils                      5     Width
     5 S               2mils                       5     Spacing
     6 Layer           1                          -2     Layer
END_ELEMENT

MLSLANTED2 MLSLANTED2  6
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        100mils                     5     VerticalOffset
     4 W               10mils                      5     Width
     5 S               2mils                       5     Spacing
     6 Layer           1                          -2     Layer
END_ELEMENT

MLSLANTED3 MLSLANTED3  6
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        100mils                     5     VerticalOffset
     4 W               10mils                      5     Width
     5 S               2mils                       5     Spacing
     6 Layer           1                          -2     Layer
END_ELEMENT

MLSLANTED4 MLSLANTED4  6
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        100mils                     5     VerticalOffset
     4 W               10mils                      5     Width
     5 S               2mils                       5     Spacing
     6 Layer           1                          -2     Layer
END_ELEMENT

MLSLANTED5 MLSLANTED5  6
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        100mils                     5     VerticalOffset
     4 W               10mils                      5     Width
     5 S               2mils                       5     Spacing
     6 Layer           1                          -2     Layer
END_ELEMENT

MLSLANTED6 MLSLANTED6  6
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        100mils                     5     VerticalOffset
     4 W               10mils                      5     Width
     5 S               2mils                       5     Spacing
     6 Layer           1                          -2     Layer
END_ELEMENT

MLSLANTED7 MLSLANTED7  6
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        100mils                     5     VerticalOffset
     4 W               10mils                      5     Width
     5 S               2mils                       5     Spacing
     6 Layer           1                          -2     Layer
END_ELEMENT

MLSLANTED8 MLSLANTED8  6
     1 Subst           Subst1                     -1     Substrate
     2 X_Offset        100mils                     5     Horizontal Offset
     3 Y_Offset        100mils                     5     VerticalOffset
     4 W               10mils                      5     Width
     5 S               2mils                       5     Spacing
     6 Layer           1                          -2     Layer
END_ELEMENT

MLSUBSTRATE10 MLSUBSTRATE10 67
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 Er[3]           4.5                        -1     Dielectric Constant
    12 H[3]            10mils                      5     Height of Substrate
    13 TanD[3]         0                          -1     Dielectric Loss Tangent
    14 T[3]            0mils                       5     Thickness
    15 Cond[3]         1.0E+306                   -1     Conductivity
    16 Er[4]           4.5                        -1     Dielectric Constant
    17 H[4]            10mils                      5     Height of Substrate
    18 TanD[4]         0                          -1     Dielectric Loss Tangent
    19 T[4]            0mils                       5     Thickness
    20 Cond[4]         1.0E+306                   -1     Conductivity
    21 Er[5]           4.5                        -1     Dielectric Constant
    22 H[5]            10mils                      5     Height of Substrate
    23 TanD[5]         0                          -1     Dielectric Loss Tangent
    24 T[5]            0mils                       5     Thickness
    25 Cond[5]         1.0E+306                   -1     Conductivity
    26 Er[6]           4.5                        -1     Dielectric Constant
    27 H[6]            10mils                      5     Height of Substrate
    28 TanD[6]         0                          -1     Dielectric Loss Tangent
    29 T[6]            0mils                       5     Thickness
    30 Cond[6]         1.0E+306                   -1     Conductivity
    31 Er[7]           4.5                        -1     Dielectric Constant
    32 H[7]            10mils                      5     Height of Substrate
    33 TanD[7]         0                          -1     Dielectric Loss Tangent
    34 T[7]            0mils                       5     Thickness
    35 Cond[7]         1.0E+306                   -1     Conductivity
    36 Er[8]           4.5                        -1     Dielectric Constant
    37 H[8]            10mils                      5     Height of Substrate
    38 TanD[8]         0                          -1     Dielectric Loss Tangent
    39 T[8]            0mils                       5     Thickness
    40 Cond[8]         1.0E+306                   -1     Conductivity
    41 Er[9]           4.5                        -1     Dielectric Constant
    42 H[9]            10mils                      5     Height of Substrate
    43 TanD[9]         0                          -1     Dielectric Loss Tangent
    44 T[9]            0mils                       5     Thickness
    45 Cond[9]         1.0E+306                   -1     Conductivity
    46 T[10]           0mils                       5     Thickness
    47 Cond[10]        1.0E+306                   -1     Conductivity
    48 LayerType[1]    BLANK                      -2     Metal Definition
    49 LayerType[2]    SIGNAL                     -2     Metal Definition
    50 LayerType[3]    GROUND                     -2     Metal Definition
    51 LayerType[4]    POWER                      -2     Metal Definition
    52 LayerType[5]    POWER                      -2     Metal Definition
    53 LayerType[6]    POWER                      -2     Metal Definition
    54 LayerType[7]    POWER                      -2     Metal Definition
    55 LayerType[8]    POWER                      -2     Metal Definition
    56 LayerType[9]    POWER                      -2     Metal Definition
    57 LayerType[10]   POWER                      -2     Metal Definition
    58 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    59 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    60 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    61 LayerName[4]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    62 LayerName[5]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    63 LayerName[6]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    64 LayerName[7]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    65 LayerName[8]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    66 LayerName[9]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    67 LayerName[10]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLSUBSTRATE12 MLSUBSTRATE12 81
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 Er[3]           4.5                        -1     Dielectric Constant
    12 H[3]            10mils                      5     Height of Substrate
    13 TanD[3]         0                          -1     Dielectric Loss Tangent
    14 T[3]            0mils                       5     Thickness
    15 Cond[3]         1.0E+306                   -1     Conductivity
    16 Er[4]           4.5                        -1     Dielectric Constant
    17 H[4]            10mils                      5     Height of Substrate
    18 TanD[4]         0                          -1     Dielectric Loss Tangent
    19 T[4]            0mils                       5     Thickness
    20 Cond[4]         1.0E+306                   -1     Conductivity
    21 Er[5]           4.5                        -1     Dielectric Constant
    22 H[5]            10mils                      5     Height of Substrate
    23 TanD[5]         0                          -1     Dielectric Loss Tangent
    24 T[5]            0mils                       5     Thickness
    25 Cond[5]         1.0E+306                   -1     Conductivity
    26 Er[6]           4.5                        -1     Dielectric Constant
    27 H[6]            10mils                      5     Height of Substrate
    28 TanD[6]         0                          -1     Dielectric Loss Tangent
    29 T[6]            0mils                       5     Thickness
    30 Cond[6]         1.0E+306                   -1     Conductivity
    31 Er[7]           4.5                        -1     Dielectric Constant
    32 H[7]            10mils                      5     Height of Substrate
    33 TanD[7]         0                          -1     Dielectric Loss Tangent
    34 T[7]            0mils                       5     Thickness
    35 Cond[7]         1.0E+306                   -1     Conductivity
    36 Er[8]           4.5                        -1     Dielectric Constant
    37 H[8]            10mils                      5     Height of Substrate
    38 TanD[8]         0                          -1     Dielectric Loss Tangent
    39 T[8]            0mils                       5     Thickness
    40 Cond[8]         1.0E+306                   -1     Conductivity
    41 Er[9]           4.5                        -1     Dielectric Constant
    42 H[9]            10mils                      5     Height of Substrate
    43 TanD[9]         0                          -1     Dielectric Loss Tangent
    44 T[9]            0mils                       5     Thickness
    45 Cond[9]         1.0E+306                   -1     Conductivity
    46 Er[10]          4.5                        -1     Dielectric Constant
    47 H[10]           10mils                      5     Height of Substrate
    48 TanD[10]        0                          -1     Dielectric Loss Tangent
    49 T[10]           0mils                       5     Thickness
    50 Cond[10]        1.0E+306                   -1     Conductivity
    51 Er[11]          4.5                        -1     Dielectric Constant
    52 H[11]           10mils                      5     Height of Substrate
    53 TanD[11]        0                          -1     Dielectric Loss Tangent
    54 T[11]           0mils                       5     Thickness
    55 Cond[11]        1.0E+306                   -1     Conductivity
    56 T[12]           0mils                       5     Thickness
    57 Cond[12]        1.0E+306                   -1     Conductivity
    58 LayerType[1]    BLANK                      -2     Metal Definition
    59 LayerType[2]    SIGNAL                     -2     Metal Definition
    60 LayerType[3]    GROUND                     -2     Metal Definition
    61 LayerType[4]    POWER                      -2     Metal Definition
    62 LayerType[5]    POWER                      -2     Metal Definition
    63 LayerType[6]    POWER                      -2     Metal Definition
    64 LayerType[7]    POWER                      -2     Metal Definition
    65 LayerType[8]    POWER                      -2     Metal Definition
    66 LayerType[9]    POWER                      -2     Metal Definition
    67 LayerType[10]   POWER                      -2     Metal Definition
    68 LayerType[11]   POWER                      -2     Metal Definition
    69 LayerType[12]   POWER                      -2     Metal Definition
    70 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    71 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    72 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    73 LayerName[4]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    74 LayerName[5]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    75 LayerName[6]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    76 LayerName[7]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    77 LayerName[8]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    78 LayerName[9]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    79 LayerName[10]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    80 LayerName[11]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    81 LayerName[12]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLSUBSTRATE14 MLSUBSTRATE14 95
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 Er[3]           4.5                        -1     Dielectric Constant
    12 H[3]            10mils                      5     Height of Substrate
    13 TanD[3]         0                          -1     Dielectric Loss Tangent
    14 T[3]            0mils                       5     Thickness
    15 Cond[3]         1.0E+306                   -1     Conductivity
    16 Er[4]           4.5                        -1     Dielectric Constant
    17 H[4]            10mils                      5     Height of Substrate
    18 TanD[4]         0                          -1     Dielectric Loss Tangent
    19 T[4]            0mils                       5     Thickness
    20 Cond[4]         1.0E+306                   -1     Conductivity
    21 Er[5]           4.5                        -1     Dielectric Constant
    22 H[5]            10mils                      5     Height of Substrate
    23 TanD[5]         0                          -1     Dielectric Loss Tangent
    24 T[5]            0mils                       5     Thickness
    25 Cond[5]         1.0E+306                   -1     Conductivity
    26 Er[6]           4.5                        -1     Dielectric Constant
    27 H[6]            10mils                      5     Height of Substrate
    28 TanD[6]         0                          -1     Dielectric Loss Tangent
    29 T[6]            0mils                       5     Thickness
    30 Cond[6]         1.0E+306                   -1     Conductivity
    31 Er[7]           4.5                        -1     Dielectric Constant
    32 H[7]            10mils                      5     Height of Substrate
    33 TanD[7]         0                          -1     Dielectric Loss Tangent
    34 T[7]            0mils                       5     Thickness
    35 Cond[7]         1.0E+306                   -1     Conductivity
    36 Er[8]           4.5                        -1     Dielectric Constant
    37 H[8]            10mils                      5     Height of Substrate
    38 TanD[8]         0                          -1     Dielectric Loss Tangent
    39 T[8]            0mils                       5     Thickness
    40 Cond[8]         1.0E+306                   -1     Conductivity
    41 Er[9]           4.5                        -1     Dielectric Constant
    42 H[9]            10mils                      5     Height of Substrate
    43 TanD[9]         0                          -1     Dielectric Loss Tangent
    44 T[9]            0mils                       5     Thickness
    45 Cond[9]         1.0E+306                   -1     Conductivity
    46 Er[10]          4.5                        -1     Dielectric Constant
    47 H[10]           10mils                      5     Height of Substrate
    48 TanD[10]        0                          -1     Dielectric Loss Tangent
    49 T[10]           0mils                       5     Thickness
    50 Cond[10]        1.0E+306                   -1     Conductivity
    51 Er[11]          4.5                        -1     Dielectric Constant
    52 H[11]           10mils                      5     Height of Substrate
    53 TanD[11]        0                          -1     Dielectric Loss Tangent
    54 T[11]           0mils                       5     Thickness
    55 Cond[11]        1.0E+306                   -1     Conductivity
    56 Er[12]          4.5                        -1     Dielectric Constant
    57 H[12]           10mils                      5     Height of Substrate
    58 TanD[12]        0                          -1     Dielectric Loss Tangent
    59 T[12]           0mils                       5     Thickness
    60 Cond[12]        1.0E+306                   -1     Conductivity
    61 Er[13]          4.5                        -1     Dielectric Constant
    62 H[13]           10mils                      5     Height of Substrate
    63 TanD[13]        0                          -1     Dielectric Loss Tangent
    64 T[13]           0mils                       5     Thickness
    65 Cond[13]        1.0E+306                   -1     Conductivity
    66 T[14]           0mils                       5     Thickness
    67 Cond[14]        1.0E+306                   -2     Conductivity
    68 LayerType[1]    BLANK                      -2     Metal Definition
    69 LayerType[2]    SIGNAL                     -2     Metal Definition
    70 LayerType[3]    GROUND                     -2     Metal Definition
    71 LayerType[4]    POWER                      -2     Metal Definition
    72 LayerType[5]    POWER                      -2     Metal Definition
    73 LayerType[6]    POWER                      -2     Metal Definition
    74 LayerType[7]    POWER                      -2     Metal Definition
    75 LayerType[8]    POWER                      -2     Metal Definition
    76 LayerType[9]    POWER                      -2     Metal Definition
    77 LayerType[10]   POWER                      -2     Metal Definition
    78 LayerType[11]   POWER                      -2     Metal Definition
    79 LayerType[12]   POWER                      -2     Metal Definition
    80 LayerType[13]   POWER                      -2     Metal Definition
    81 LayerType[14]   POWER                      -2     Metal Definition
    82 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    83 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    84 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    85 LayerName[4]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    86 LayerName[5]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    87 LayerName[6]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    88 LayerName[7]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    89 LayerName[8]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    90 LayerName[9]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    91 LayerName[10]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    92 LayerName[11]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    93 LayerName[12]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    94 LayerName[13]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    95 LayerName[14]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLSUBSTRATE16 MLSUBSTRATE16 109
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 Er[3]           4.5                        -1     Dielectric Constant
    12 H[3]            10mils                      5     Height of Substrate
    13 TanD[3]         0                          -1     Dielectric Loss Tangent
    14 T[3]            0mils                       5     Thickness
    15 Cond[3]         1.0E+306                   -1     Conductivity
    16 Er[4]           4.5                        -1     Dielectric Constant
    17 H[4]            10mils                      5     Height of Substrate
    18 TanD[4]         0                          -1     Dielectric Loss Tangent
    19 T[4]            0mils                       5     Thickness
    20 Cond[4]         1.0E+306                   -1     Conductivity
    21 Er[5]           4.5                        -1     Dielectric Constant
    22 H[5]            10mils                      5     Height of Substrate
    23 TanD[5]         0                          -1     Dielectric Loss Tangent
    24 T[5]            0mils                       5     Thickness
    25 Cond[5]         1.0E+306                   -1     Conductivity
    26 Er[6]           4.5                        -1     Dielectric Constant
    27 H[6]            10mils                      5     Height of Substrate
    28 TanD[6]         0                          -1     Dielectric Loss Tangent
    29 T[6]            0mils                       5     Thickness
    30 Cond[6]         1.0E+306                   -1     Conductivity
    31 Er[7]           4.5                        -1     Dielectric Constant
    32 H[7]            10mils                      5     Height of Substrate
    33 TanD[7]         0                          -1     Dielectric Loss Tangent
    34 T[7]            0mils                       5     Thickness
    35 Cond[7]         1.0E+306                   -1     Conductivity
    36 Er[8]           4.5                        -1     Dielectric Constant
    37 H[8]            10mils                      5     Height of Substrate
    38 TanD[8]         0                          -1     Dielectric Loss Tangent
    39 T[8]            0mils                       5     Thickness
    40 Cond[8]         1.0E+306                   -1     Conductivity
    41 Er[9]           4.5                        -1     Dielectric Constant
    42 H[9]            10mils                      5     Height of Substrate
    43 TanD[9]         0                          -1     Dielectric Loss Tangent
    44 T[9]            0mils                       5     Thickness
    45 Cond[9]         1.0E+306                   -1     Conductivity
    46 Er[10]          4.5                        -1     Dielectric Constant
    47 H[10]           10mils                      5     Height of Substrate
    48 TanD[10]        0                          -1     Dielectric Loss Tangent
    49 T[10]           0mils                       5     Thickness
    50 Cond[10]        1.0E+306                   -1     Conductivity
    51 Er[11]          4.5                        -1     Dielectric Constant
    52 H[11]           10mils                      5     Height of Substrate
    53 TanD[11]        0                          -1     Dielectric Loss Tangent
    54 T[11]           0mils                       5     Thickness
    55 Cond[11]        1.0E+306                   -1     Conductivity
    56 Er[12]          4.5                        -1     Dielectric Constant
    57 H[12]           10mils                      5     Height of Substrate
    58 TanD[12]        0                          -1     Dielectric Loss Tangent
    59 T[12]           0mils                       5     Thickness
    60 Cond[12]        1.0E+306                   -1     Conductivity
    61 Er[13]          4.5                        -1     Dielectric Constant
    62 H[13]           10mils                      5     Height of Substrate
    63 TanD[13]        0                          -1     Dielectric Loss Tangent
    64 T[13]           0mils                       5     Thickness
    65 Cond[13]        1.0E+306                   -1     Conductivity
    66 Er[14]          4.5                        -1     Dielectric Constant
    67 H[14]           10mils                      5     Height of Substrate
    68 TanD[14]        0                          -1     Dielectric Loss Tangent
    69 T[14]           0mils                       5     Thickness
    70 Cond[14]        1.0E+306                   -1     Conductivity
    71 Er[15]          4.5                        -1     Dielectric Constant
    72 H[15]           10mils                      5     Height of Substrate
    73 TanD[15]        0                          -1     Dielectric Loss Tangent
    74 T[15]           0mils                       5     Thickness
    75 Cond[15]        1.0E+306                   -1     Conductivity
    76 T[16]           0mils                       5     Thickness
    77 Cond[16]        1.0E+306                   -1     Conductivity
    78 LayerType[1]    BLANK                      -2     Metal Definition
    79 LayerType[2]    SIGNAL                     -2     Metal Definition
    80 LayerType[3]    GROUND                     -2     Metal Definition
    81 LayerType[4]    POWER                      -2     Metal Definition
    82 LayerType[5]    POWER                      -2     Metal Definition
    83 LayerType[6]    POWER                      -2     Metal Definition
    84 LayerType[7]    POWER                      -2     Metal Definition
    85 LayerType[8]    POWER                      -2     Metal Definition
    86 LayerType[9]    POWER                      -2     Metal Definition
    87 LayerType[10]   POWER                      -2     Metal Definition
    88 LayerType[11]   POWER                      -2     Metal Definition
    89 LayerType[12]   POWER                      -2     Metal Definition
    90 LayerType[13]   POWER                      -2     Metal Definition
    91 LayerType[14]   POWER                      -2     Metal Definition
    92 LayerType[15]   POWER                      -2     Metal Definition
    93 LayerType[16]   POWER                      -2     Metal Definition
    94 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    95 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    96 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    97 LayerName[4]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    98 LayerName[5]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    99 LayerName[6]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   100 LayerName[7]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   101 LayerName[8]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   102 LayerName[9]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   103 LayerName[10]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   104 LayerName[11]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   105 LayerName[12]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   106 LayerName[13]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   107 LayerName[14]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   108 LayerName[15]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   109 LayerName[16]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT


MLSUBSTRATE32 MLSUBSTRATE32 109
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 Er[3]           4.5                        -1     Dielectric Constant
    12 H[3]            10mils                      5     Height of Substrate
    13 TanD[3]         0                          -1     Dielectric Loss Tangent
    14 T[3]            0mils                       5     Thickness
    15 Cond[3]         1.0E+306                   -1     Conductivity
    16 Er[4]           4.5                        -1     Dielectric Constant
    17 H[4]            10mils                      5     Height of Substrate
    18 TanD[4]         0                          -1     Dielectric Loss Tangent
    19 T[4]            0mils                       5     Thickness
    20 Cond[4]         1.0E+306                   -1     Conductivity
    21 Er[5]           4.5                        -1     Dielectric Constant
    22 H[5]            10mils                      5     Height of Substrate
    23 TanD[5]         0                          -1     Dielectric Loss Tangent
    24 T[5]            0mils                       5     Thickness
    25 Cond[5]         1.0E+306                   -1     Conductivity
    26 Er[6]           4.5                        -1     Dielectric Constant
    27 H[6]            10mils                      5     Height of Substrate
    28 TanD[6]         0                          -1     Dielectric Loss Tangent
    29 T[6]            0mils                       5     Thickness
    30 Cond[6]         1.0E+306                   -1     Conductivity
    31 Er[7]           4.5                        -1     Dielectric Constant
    32 H[7]            10mils                      5     Height of Substrate
    33 TanD[7]         0                          -1     Dielectric Loss Tangent
    34 T[7]            0mils                       5     Thickness
    35 Cond[7]         1.0E+306                   -1     Conductivity
    36 Er[8]           4.5                        -1     Dielectric Constant
    37 H[8]            10mils                      5     Height of Substrate
    38 TanD[8]         0                          -1     Dielectric Loss Tangent
    39 T[8]            0mils                       5     Thickness
    40 Cond[8]         1.0E+306                   -1     Conductivity
    41 Er[9]           4.5                        -1     Dielectric Constant
    42 H[9]            10mils                      5     Height of Substrate
    43 TanD[9]         0                          -1     Dielectric Loss Tangent
    44 T[9]            0mils                       5     Thickness
    45 Cond[9]         1.0E+306                   -1     Conductivity
    46 Er[10]          4.5                        -1     Dielectric Constant
    47 H[10]           10mils                      5     Height of Substrate
    48 TanD[10]        0                          -1     Dielectric Loss Tangent
    49 T[10]           0mils                       5     Thickness
    50 Cond[10]        1.0E+306                   -1     Conductivity
    51 Er[11]          4.5                        -1     Dielectric Constant
    52 H[11]           10mils                      5     Height of Substrate
    53 TanD[11]        0                          -1     Dielectric Loss Tangent
    54 T[11]           0mils                       5     Thickness
    55 Cond[11]        1.0E+306                   -1     Conductivity
    56 Er[12]          4.5                        -1     Dielectric Constant
    57 H[12]           10mils                      5     Height of Substrate
    58 TanD[12]        0                          -1     Dielectric Loss Tangent
    59 T[12]           0mils                       5     Thickness
    60 Cond[12]        1.0E+306                   -1     Conductivity
    61 Er[13]          4.5                        -1     Dielectric Constant
    62 H[13]           10mils                      5     Height of Substrate
    63 TanD[13]        0                          -1     Dielectric Loss Tangent
    64 T[13]           0mils                       5     Thickness
    65 Cond[13]        1.0E+306                   -1     Conductivity
    66 Er[14]          4.5                        -1     Dielectric Constant
    67 H[14]           10mils                      5     Height of Substrate
    68 TanD[14]        0                          -1     Dielectric Loss Tangent
    69 T[14]           0mils                       5     Thickness
    70 Cond[14]        1.0E+306                   -1     Conductivity
    71 Er[15]          4.5                        -1     Dielectric Constant
    72 H[15]           10mils                      5     Height of Substrate
    73 TanD[15]        0                          -1     Dielectric Loss Tangent
    74 T[15]           0mils                       5     Thickness
    75 Cond[15]        1.0E+306                   -1     Conductivity
    76 T[16]           0mils                       5     Thickness
    77 Cond[16]        1.0E+306                   -1     Conductivity
    78 LayerType[1]    BLANK                      -2     Metal Definition
    79 LayerType[2]    SIGNAL                     -2     Metal Definition
    80 LayerType[3]    GROUND                     -2     Metal Definition
    81 LayerType[4]    POWER                      -2     Metal Definition
    82 LayerType[5]    POWER                      -2     Metal Definition
    83 LayerType[6]    POWER                      -2     Metal Definition
    84 LayerType[7]    POWER                      -2     Metal Definition
    85 LayerType[8]    POWER                      -2     Metal Definition
    86 LayerType[9]    POWER                      -2     Metal Definition
    87 LayerType[10]   POWER                      -2     Metal Definition
    88 LayerType[11]   POWER                      -2     Metal Definition
    89 LayerType[12]   POWER                      -2     Metal Definition
    90 LayerType[13]   POWER                      -2     Metal Definition
    91 LayerType[14]   POWER                      -2     Metal Definition
    92 LayerType[15]   POWER                      -2     Metal Definition
    93 LayerType[16]   POWER                      -2     Metal Definition
    94 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    95 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    96 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    97 LayerName[4]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    98 LayerName[5]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    99 LayerName[6]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   100 LayerName[7]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   101 LayerName[8]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   102 LayerName[9]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   103 LayerName[10]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   104 LayerName[11]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   105 LayerName[12]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   106 LayerName[13]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   107 LayerName[14]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   108 LayerName[15]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   109 LayerName[16]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLSUBSTRATE40 MLSUBSTRATE40 109
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 Er[3]           4.5                        -1     Dielectric Constant
    12 H[3]            10mils                      5     Height of Substrate
    13 TanD[3]         0                          -1     Dielectric Loss Tangent
    14 T[3]            0mils                       5     Thickness
    15 Cond[3]         1.0E+306                   -1     Conductivity
    16 Er[4]           4.5                        -1     Dielectric Constant
    17 H[4]            10mils                      5     Height of Substrate
    18 TanD[4]         0                          -1     Dielectric Loss Tangent
    19 T[4]            0mils                       5     Thickness
    20 Cond[4]         1.0E+306                   -1     Conductivity
    21 Er[5]           4.5                        -1     Dielectric Constant
    22 H[5]            10mils                      5     Height of Substrate
    23 TanD[5]         0                          -1     Dielectric Loss Tangent
    24 T[5]            0mils                       5     Thickness
    25 Cond[5]         1.0E+306                   -1     Conductivity
    26 Er[6]           4.5                        -1     Dielectric Constant
    27 H[6]            10mils                      5     Height of Substrate
    28 TanD[6]         0                          -1     Dielectric Loss Tangent
    29 T[6]            0mils                       5     Thickness
    30 Cond[6]         1.0E+306                   -1     Conductivity
    31 Er[7]           4.5                        -1     Dielectric Constant
    32 H[7]            10mils                      5     Height of Substrate
    33 TanD[7]         0                          -1     Dielectric Loss Tangent
    34 T[7]            0mils                       5     Thickness
    35 Cond[7]         1.0E+306                   -1     Conductivity
    36 Er[8]           4.5                        -1     Dielectric Constant
    37 H[8]            10mils                      5     Height of Substrate
    38 TanD[8]         0                          -1     Dielectric Loss Tangent
    39 T[8]            0mils                       5     Thickness
    40 Cond[8]         1.0E+306                   -1     Conductivity
    41 Er[9]           4.5                        -1     Dielectric Constant
    42 H[9]            10mils                      5     Height of Substrate
    43 TanD[9]         0                          -1     Dielectric Loss Tangent
    44 T[9]            0mils                       5     Thickness
    45 Cond[9]         1.0E+306                   -1     Conductivity
    46 Er[10]          4.5                        -1     Dielectric Constant
    47 H[10]           10mils                      5     Height of Substrate
    48 TanD[10]        0                          -1     Dielectric Loss Tangent
    49 T[10]           0mils                       5     Thickness
    50 Cond[10]        1.0E+306                   -1     Conductivity
    51 Er[11]          4.5                        -1     Dielectric Constant
    52 H[11]           10mils                      5     Height of Substrate
    53 TanD[11]        0                          -1     Dielectric Loss Tangent
    54 T[11]           0mils                       5     Thickness
    55 Cond[11]        1.0E+306                   -1     Conductivity
    56 Er[12]          4.5                        -1     Dielectric Constant
    57 H[12]           10mils                      5     Height of Substrate
    58 TanD[12]        0                          -1     Dielectric Loss Tangent
    59 T[12]           0mils                       5     Thickness
    60 Cond[12]        1.0E+306                   -1     Conductivity
    61 Er[13]          4.5                        -1     Dielectric Constant
    62 H[13]           10mils                      5     Height of Substrate
    63 TanD[13]        0                          -1     Dielectric Loss Tangent
    64 T[13]           0mils                       5     Thickness
    65 Cond[13]        1.0E+306                   -1     Conductivity
    66 Er[14]          4.5                        -1     Dielectric Constant
    67 H[14]           10mils                      5     Height of Substrate
    68 TanD[14]        0                          -1     Dielectric Loss Tangent
    69 T[14]           0mils                       5     Thickness
    70 Cond[14]        1.0E+306                   -1     Conductivity
    71 Er[15]          4.5                        -1     Dielectric Constant
    72 H[15]           10mils                      5     Height of Substrate
    73 TanD[15]        0                          -1     Dielectric Loss Tangent
    74 T[15]           0mils                       5     Thickness
    75 Cond[15]        1.0E+306                   -1     Conductivity
    76 T[16]           0mils                       5     Thickness
    77 Cond[16]        1.0E+306                   -1     Conductivity
    78 LayerType[1]    BLANK                      -2     Metal Definition
    79 LayerType[2]    SIGNAL                     -2     Metal Definition
    80 LayerType[3]    GROUND                     -2     Metal Definition
    81 LayerType[4]    POWER                      -2     Metal Definition
    82 LayerType[5]    POWER                      -2     Metal Definition
    83 LayerType[6]    POWER                      -2     Metal Definition
    84 LayerType[7]    POWER                      -2     Metal Definition
    85 LayerType[8]    POWER                      -2     Metal Definition
    86 LayerType[9]    POWER                      -2     Metal Definition
    87 LayerType[10]   POWER                      -2     Metal Definition
    88 LayerType[11]   POWER                      -2     Metal Definition
    89 LayerType[12]   POWER                      -2     Metal Definition
    90 LayerType[13]   POWER                      -2     Metal Definition
    91 LayerType[14]   POWER                      -2     Metal Definition
    92 LayerType[15]   POWER                      -2     Metal Definition
    93 LayerType[16]   POWER                      -2     Metal Definition
    94 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    95 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    96 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    97 LayerName[4]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    98 LayerName[5]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    99 LayerName[6]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   100 LayerName[7]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   101 LayerName[8]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   102 LayerName[9]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   103 LayerName[10]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   104 LayerName[11]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   105 LayerName[12]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   106 LayerName[13]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   107 LayerName[14]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   108 LayerName[15]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
   109 LayerName[16]   smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLSUBSTRATE2 MLSUBSTRATE2 11
     1 Er              4.5                        -1     Dielectric Constant
     2 H               10mils                      5     Height of Substrate
     3 TanD            0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 T[2]            0mils                       5     Thickness
     7 Cond[2]         1.0E+306                   -1     Conductivity
     8 LayerType[1]    SIGNAL                     -2     Metal Definition
     9 LayerType[2]    GROUND                     -2     Metal Definition
    10 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    11 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLSUBSTRATE3 MLSUBSTRATE3 18
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 T[3]            0mils                       5     Thickness
    12 Cond[3]         1.0E+306                   -1     Conductivity
    13 LayerType[1]    GROUND                     -2     Metal Definition
    14 LayerType[2]    SIGNAL                     -2     Metal Definition
    15 LayerType[3]    GROUND                     -2     Metal Definition
    16 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    17 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    18 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLSUBSTRATE4 MLSUBSTRATE4 25
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 Er[3]           4.5                        -1     Dielectric Constant
    12 H[3]            10mils                      5     Height of Substrate
    13 TanD[3]         0                          -1     Dielectric Loss Tangent
    14 T[3]            0mils                       5     Thickness
    15 Cond[3]         1.0E+306                   -1     Conductivity
    16 T[4]            0mils                       5     Thickness
    17 Cond[4]         1.0E+306                   -1     Conductivity
    18 LayerType[1]    BLANK                      -2     Metal Definition
    19 LayerType[2]    SIGNAL                     -2     Metal Definition
    20 LayerType[3]    GROUND                     -2     Metal Definition
    21 LayerType[4]    POWER                      -2     Metal Definition
    22 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    23 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    24 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    25 LayerName[4]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLSUBSTRATE5 MLSUBSTRATE5 32
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 Er[3]           4.5                        -1     Dielectric Constant
    12 H[3]            10mils                      5     Height of Substrate
    13 TanD[3]         0                          -1     Dielectric Loss Tangent
    14 T[3]            0mils                       5     Thickness
    15 Cond[3]         1.0E+306                   -1     Conductivity
    16 Er[4]           4.5                        -1     Dielectric Constant
    17 H[4]            10mils                      5     Height of Substrate
    18 TanD[4]         0                          -1     Dielectric Loss Tangent
    19 T[4]            0mils                       5     Thickness
    20 Cond[4]         1.0E+306                   -1     Conductivity
    21 T[5]            0mils                       5     Thickness
    22 Cond[5]         1.0E+306                   -1     Conductivity
    23 LayerType[1]    BLANK                      -2     Metal Definition
    24 LayerType[2]    SIGNAL                     -2     Metal Definition
    25 LayerType[3]    GROUND                     -2     Metal Definition
    26 LayerType[4]    POWER                      -2     Metal Definition
    27 LayerType[5]    POWER                      -2     Metal Definition
    28 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    29 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    30 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    31 LayerName[4]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    32 LayerName[5]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLSUBSTRATE6 MLSUBSTRATE6 39
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 Er[3]           4.5                        -1     Dielectric Constant
    12 H[3]            10mils                      5     Height of Substrate
    13 TanD[3]         0                          -1     Dielectric Loss Tangent
    14 T[3]            0mils                       5     Thickness
    15 Cond[3]         1.0E+306                   -1     Conductivity
    16 Er[4]           4.5                        -1     Dielectric Constant
    17 H[4]            10mils                      5     Height of Substrate
    18 TanD[4]         0                          -1     Dielectric Loss Tangent
    19 T[4]            0mils                       5     Thickness
    20 Cond[4]         1.0E+306                   -1     Conductivity
    21 Er[5]           4.5                        -1     Dielectric Constant
    22 H[5]            10mils                      5     Height of Substrate
    23 TanD[5]         0                          -1     Dielectric Loss Tangent
    24 T[5]            0mils                       5     Thickness
    25 Cond[5]         1.0E+306                   -1     Conductivity
    26 T[6]            0mils                       5     Thickness
    27 Cond[6]         1.0E+306                   -1     Conductivity
    28 LayerType[1]    BLANK                      -2     Metal Definition
    29 LayerType[2]    SIGNAL                     -2     Metal Definition
    30 LayerType[3]    GROUND                     -2     Metal Definition
    31 LayerType[4]    POWER                      -2     Metal Definition
    32 LayerType[5]    POWER                      -2     Metal Definition
    33 LayerType[6]    POWER                      -2     Metal Definition
    34 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    35 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    36 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    37 LayerName[4]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    38 LayerName[5]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    39 LayerName[6]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLSUBSTRATE7 MLSUBSTRATE7 46
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 Er[3]           4.5                        -1     Dielectric Constant
    12 H[3]            10mils                      5     Height of Substrate
    13 TanD[3]         0                          -1     Dielectric Loss Tangent
    14 T[3]            0mils                       5     Thickness
    15 Cond[3]         1.0E+306                   -1     Conductivity
    16 Er[4]           4.5                        -1     Dielectric Constant
    17 H[4]            10mils                      5     Height of Substrate
    18 TanD[4]         0                          -1     Dielectric Loss Tangent
    19 T[4]            0mils                       5     Thickness
    20 Cond[4]         1.0E+306                   -1     Conductivity
    21 Er[5]           4.5                        -1     Dielectric Constant
    22 H[5]            10mils                      5     Height of Substrate
    23 TanD[5]         0                          -1     Dielectric Loss Tangent
    24 T[5]            0mils                       5     Thickness
    25 Cond[5]         1.0E+306                   -1     Conductivity
    26 Er[6]           4.5                        -1     Dielectric Constant
    27 H[6]            10mils                      5     Height of Substrate
    28 TanD[6]         0                          -1     Dielectric Loss Tangent
    29 T[6]            0mils                       5     Thickness
    30 Cond[6]         1.0E+306                   -1     Conductivity
    31 T[7]            0mils                       5     Thickness
    32 Cond[7]         1.0E+306                   -1     Conductivity
    33 LayerType[1]    BLANK                      -2     Metal Definition
    34 LayerType[2]    SIGNAL                     -2     Metal Definition
    35 LayerType[3]    GROUND                     -2     Metal Definition
    36 LayerType[4]    POWER                      -2     Metal Definition
    37 LayerType[5]    POWER                      -2     Metal Definition
    38 LayerType[6]    POWER                      -2     Metal Definition
    39 LayerType[7]    POWER                      -2     Metal Definition
    40 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    41 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    42 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    43 LayerName[4]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    44 LayerName[5]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    45 LayerName[6]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    46 LayerName[7]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLSUBSTRATE8 MLSUBSTRATE8 53
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 Er[3]           4.5                        -1     Dielectric Constant
    12 H[3]            10mils                      5     Height of Substrate
    13 TanD[3]         0                          -1     Dielectric Loss Tangent
    14 T[3]            0mils                       5     Thickness
    15 Cond[3]         1.0E+306                   -1     Conductivity
    16 Er[4]           4.5                        -1     Dielectric Constant
    17 H[4]            10mils                      5     Height of Substrate
    18 TanD[4]         0                          -1     Dielectric Loss Tangent
    19 T[4]            0mils                       5     Thickness
    20 Cond[4]         1.0E+306                   -1     Conductivity
    21 Er[5]           4.5                        -1     Dielectric Constant
    22 H[5]            10mils                      5     Height of Substrate
    23 TanD[5]         0                          -1     Dielectric Loss Tangent
    24 T[5]            0mils                       5     Thickness
    25 Cond[5]         1.0E+306                   -1     Conductivity
    26 Er[6]           4.5                        -1     Dielectric Constant
    27 H[6]            10mils                      5     Height of Substrate
    28 TanD[6]         0                          -1     Dielectric Loss Tangent
    29 T[6]            0mils                       5     Thickness
    30 Cond[6]         1.0E+306                   -1     Conductivity
    31 Er[7]           4.5                        -1     Dielectric Constant
    32 H[7]            10mils                      5     Height of Substrate
    33 TanD[7]         0                          -1     Dielectric Loss Tangent
    34 T[7]            0mils                       5     Thickness
    35 Cond[7]         1.0E+306                   -1     Conductivity
    36 T[8]            0mils                       5     Thickness
    37 Cond[8]         1.0E+306                   -1     Conductivity
    38 LayerType[1]    BLANK                      -2     Metal Definition
    39 LayerType[2]    SIGNAL                     -2     Metal Definition
    40 LayerType[3]    GROUND                     -2     Metal Definition
    41 LayerType[4]    POWER                      -2     Metal Definition
    42 LayerType[5]    POWER                      -2     Metal Definition
    43 LayerType[6]    POWER                      -2     Metal Definition
    44 LayerType[7]    POWER                      -2     Metal Definition
    45 LayerType[8]    POWER                      -2     Metal Definition
    46 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    47 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    48 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    49 LayerName[4]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    50 LayerName[5]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    51 LayerName[6]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    52 LayerName[7]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    53 LayerName[8]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLSUBSTRATE9 MLSUBSTRATE9 60
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+306                   -1     Conductivity
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+306                   -1     Conductivity
    11 Er[3]           4.5                        -1     Dielectric Constant
    12 H[3]            10mils                      5     Height of Substrate
    13 TanD[3]         0                          -1     Dielectric Loss Tangent
    14 T[3]            0mils                       5     Thickness
    15 Cond[3]         1.0E+306                   -1     Conductivity
    16 Er[4]           4.5                        -1     Dielectric Constant
    17 H[4]            10mils                      5     Height of Substrate
    18 TanD[4]         0                          -1     Dielectric Loss Tangent
    19 T[4]            0mils                       5     Thickness
    20 Cond[4]         1.0E+306                   -1     Conductivity
    21 Er[5]           4.5                        -1     Dielectric Constant
    22 H[5]            10mils                      5     Height of Substrate
    23 TanD[5]         0                          -1     Dielectric Loss Tangent
    24 T[5]            0mils                       5     Thickness
    25 Cond[5]         1.0E+306                   -1     Conductivity
    26 Er[6]           4.5                        -1     Dielectric Constant
    27 H[6]            10mils                      5     Height of Substrate
    28 TanD[6]         0                          -1     Dielectric Loss Tangent
    29 T[6]            0mils                       5     Thickness
    30 Cond[6]         1.0E+306                   -1     Conductivity
    31 Er[7]           4.5                        -1     Dielectric Constant
    32 H[7]            10mils                      5     Height of Substrate
    33 TanD[7]         0                          -1     Dielectric Loss Tangent
    34 T[7]            0mils                       5     Thickness
    35 Cond[7]         1.0E+306                   -1     Conductivity
    36 Er[8]           4.5                        -1     Dielectric Constant
    37 H[8]            10mils                      5     Height of Substrate
    38 TanD[8]         0                          -1     Dielectric Loss Tangent
    39 T[8]            0mils                       5     Thickness
    40 Cond[8]         1.0E+306                   -1     Conductivity
    41 T[9]            0mils                       5     Thickness
    42 Cond[9]         1.0E+306                   -1     Conductivity
    43 LayerType[1]    BLANK                      -2     Metal Definition
    44 LayerType[2]    SIGNAL                     -2     Metal Definition
    45 LayerType[3]    GROUND                     -2     Metal Definition
    46 LayerType[4]    POWER                      -2     Metal Definition
    47 LayerType[5]    POWER                      -2     Metal Definition
    48 LayerType[6]    POWER                      -2     Metal Definition
    49 LayerType[7]    POWER                      -2     Metal Definition
    50 LayerType[8]    POWER                      -2     Metal Definition
    51 LayerType[9]    POWER                      -2     Metal Definition
    52 LayerName[1]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    53 LayerName[2]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    54 LayerName[3]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    55 LayerName[4]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    56 LayerName[5]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    57 LayerName[6]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    58 LayerName[7]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    59 LayerName[8]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
    60 LayerName[9]    smt_cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

MLVIAHOLE MLVIAHOLE  6
     1 Subst           Subst1                     -1     Substrate
     2 DiamVia         5mils                       5     Diameter of Via
     3 T               0mils                       5     Plating Thickness
     4 Cond[1]         1.0E+306                   -1     Conductivity
     5 Layer1          1                          -2     Layer
     6 Layer2          2                          -2     Layer
END_ELEMENT

MLVIAPAD  MLVIAPAD   5
     1 Subst           Subst1                     -1     Substrate
     2 DiamVia         5mils                       5     Diameter of Via
     3 DiamPad         15mils                      5     Diameter of Pad
     4 Layer           1                          -2     Layer
     5 Angle           180deg                      7     For Layout Only: angle from input pin to output pin
END_ELEMENT

MM9_NMOS  MM9_NMOS  10
     1 Model           MOSFETM1                   -1     Model instance name
     2 Length          ''                          5     Channel Length, m
     3 Width           ''                          5     Channel Width, m
     4 Ab              ''                         -1     Diffusion Area, m^2
     5 Ls              ''                          5     Length of sidewall not under gate, m
     6 Lg              ''                          5     Length of sidewall under gate, m
     7 Region          ''                         -1     DC operating region, 0=off, 1=on, 2=rev, 3=sat
     8 Temp            ''                         12     Device operating temperature
     9 Mult            ''                         -1     Number of Devices in Parallel
    10 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

MOSFET_NMOS MOSFET_NMOS 13
     1 Model           MOSFETM1                   -1     Model instance name
     2 Length          ''                          5     Channel Length, m
     3 Width           ''                          5     Channel Width, m
     4 Ad              ''                         -1     Drain Area, m^2
     5 As              ''                         -1     Source Area, m^2
     6 Pd              ''                          5     Drain Perimeter, m
     7 Ps              ''                          5     Source Perimeter, m
     8 Nrd             ''                         -1     Drain Squares
     9 Nrs             ''                         -1     Source Squares
    10 Mult            ''                         -1     Number of Devices in Parallel
    11 Region          ''                         -1     DC operating region, 0=off, 1=on, 2=rev, 3=sat
    12 Temp            ''                         12     Device operating temperature
    13 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

MOSFET_PMOS MOSFET_PMOS 13
     1 Model           MOSFETM1                   -1     Model instance name
     2 Length          ''                          5     Channel Length, m
     3 Width           ''                          5     Channel Width, m
     4 Ad              ''                         -1     Drain Area, m^2
     5 As              ''                         -1     Source Area, m^2
     6 Pd              ''                          5     Drain Perimeter, m
     7 Ps              ''                          5     Source Perimeter, m
     8 Nrd             ''                         -1     Drain Squares
     9 Nrs             ''                         -1     Source Squares
    10 Mult            ''                         -1     Number of Devices in Parallel
    11 Region          ''                         -1     DC operating region, 0=off, 1=on, 2=rev, 3=sat
    12 Temp            ''                         12     Device operating temperature
    13 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

MOS_Model9_Process MOS_Model9_Process 96
     1 NMOS            y_n1                       -1     Model Type - YES or NO
     2 PMOS            y_n0                       -1     Model Type - YES or NO
     3 Type            2                          -1     Type of model: 1:SINGLE_DEVICE 2:PROCESS_BASED
     4 Ler             ''                          5     Effective Channel Length of the Reference Transistor, m
     5 Wer             ''                          5     Effective Channel Width of the Reference Transistor, m
     6 Lvar            ''                          5     Difference between the Actual and the Programmed Poly-Silicon Gate Length, m
     7 Lap             ''                          5     Effective Channel Length Reduction per Side, m
     8 Wvar            ''                          5     Difference between the Actual and the Programmed Field-Oxide Opening
     9 Wot             ''                          5     Effective Channel Width Reduction per Side, m
    10 Tr              ''                         12     Temperature for the Reference Transistor, Celsius
    11 Vtor            ''                          9     Threshold Voltage at Zero Back-Bias, V
    12 Stvto           ''                         -1     Coefficient of the Temperature Dependence of VTO, V/K
    13 Slvto           ''                         -1     Coefficient of the Length Dependence of VTO, V*m
    14 Sl2vto          ''                         -1     Second Coefficient of the Length Dependence of VTO, V*m^2
    15 Swvto           ''                         -1     Coefficient of the Width Dependence of VTO, V*m
    16 Kor             ''                         -1     Low Back-Bias Body Factor, V^(1/2)
    17 Slko            ''                         -1     Coefficient of the Length Dependence of KO, m*V^(1/2)
    18 Swko            ''                         -1     Coefficient of the Width Dependence of KO, m*V^(1/2)
    19 Kr              ''                         -1     High Back-Bias Body Factor, V^(1/2)
    20 Slk             ''                         -1     Coefficient of the Length Dependence of K, m*V^(1/2)
    21 Swk             ''                         -1     Coefficient of the Width Dependence of K, m*V^(1/2)
    22 Phibr           ''                          9     Surface Potential at Strong Inversion, V
    23 Vsbxr           ''                          9     Transition Voltage for the Dual-K-Factor Model, V
    24 Slvsbx          ''                         -1     Coefficient of the Length Dependence of VSBX, V*m
    25 Swvsbx          ''                         -1     Coefficient of the Width Dependence of VSBX, V*m
    26 Betsq           ''                         -1     Gain Factor, A/V^2
    27 Etabet          ''                         -1     Exponent of the Temperature Dependence of BET
    28 The1r           ''                         -1     Coefficient of the Mobility Reduction due to the Gate-Induced Field, 1/V
    29 Stthe1r         ''                         -1     Coefficient of the Temperature Dependence of THE1, 1/V/K
    30 Slthe1r         ''                         -1     Coefficient of the Length Dependence of THE1, m/V
    31 Stlthe1         ''                         -1     Coefficient of the Temperature Dependence of the Length Dependence of THE1, m/V/K
    32 Swthe1          ''                         -1     Coefficient of the Width Dependence of THE1, m/V
    33 The2r           ''                         -1     Coefficient of the Mobility Reduction due to the Back-Bias, V^(-1/2)
    34 Stthe2r         ''                         -1     Coefficient of the Temperature Dependence of THE2, V^(-1/2)/K
    35 Slthe2r         ''                         -1     Coefficient of the Length Dependence of THE2, m/V^(1/2)
    36 Stlthe2         ''                         -1     Coefficient of the Temperature Dependence of the Length Dependence of THE2, m/V^(1/2)/K
    37 Swthe2          ''                         -1     Coefficient of the Width Dependence of THE2, m/V^(1/2)
    38 The3r           ''                         -1     Coefficient of the Mobility Reduction due to the Lateral Field, 1/V
    39 Stthe3r         ''                         -1     Coefficient of the Temperature Dependence of THE3, 1/V/K
    40 Slthe3r         ''                         -1     Coefficient of the Length Dependence of THE3, m/V
    41 Stlthe3         ''                         -1     Coefficient of the Temperature Dependence of the Length Dependence of THE3, m/V/K
    42 Swthe3          ''                         -1     Coefficient of the Width Dependence of THE3, m/V
    43 Gam1r           ''                          9     Coefficient for the Drain Induced Threshold Shift, V
    44 Slgam1          ''                         -1     Coefficient of the Length Dependence of GAM1, V*m
    45 Swgam1          ''                         -1     Coefficient of the Width Dependence of GAM1, V*m
    46 Etadsr          ''                         -1     Exponent of the Vds Dependence of GAM1
    47 Alpr            ''                         -1     Factor of the Channel-Length Modulation
    48 Etaalp          ''                         -1     Exponent of the Length Dependence of ALP
    49 Slalp           ''                          5     Coefficient of the Length Dependence of ALP, m
    50 Swalp           ''                          5     Coefficient of the Width Dependence of ALP, m
    51 Vpr             ''                          9     Characteristic Voltage of Channel Length Modulation, V
    52 Gamoor          ''                         -1     Coefficient of the Drain-Induced Threshold Shift
    53 Slgamoo         ''                          5     Coefficient of the Length Dependence of GAMOO, m
    54 Etagamr         ''                         -1     Exponent of the Back-Bias Dependence of GAMO
    55 Mor             ''                         -1     Factor of the Subthreshold Slope
    56 Stmo            ''                         -1     Coefficient of the Temperature Dependence of MO, 1/K
    57 Slmo            ''                         -1     Coefficient of the Length Dependence of MO, m^(1/2)
    58 Etamr           ''                         -1     Exponent of the Back-Bias Dependence of M
    59 Zet1r           ''                         -1     Weak Inversion Correction Factor
    60 Etazet          ''                         -1     Exponent of the Length Dependence of ZET
    61 Slzet1          ''                          5     Coefficient of the Length Dependence of ZET
    62 Vsbtr           ''                          9     Limiting Voltage of the VSB Dependence of M and GAMO, V
    63 Slvsbt          ''                         -1     Coefficient of the Length Dependence of VSBT, m*V
    64 A1r             ''                         -1     Factor of the Weak-Avalanche Current
    65 Sta1            ''                         -1     Coefficient of the Temperature Dependence of A1, 1/K
    66 Sla1            ''                          5     Coefficient of the Length Dependence of A1, m
    67 Swa1            ''                          5     Coefficient of the Width Dependence of A1, m
    68 A2r             ''                          9     Exponent of the Weak-Avalanche Current, V
    69 Sla2            ''                         -1     Coefficient of the Length Dependence of A2, m*V
    70 Swa2            ''                         -1     Coefficient of the Width Dependence of A2, m*V
    71 A3r             ''                         -1     Factor of Vds above which Weak-Avalanche Occurs
    72 Sla3            ''                          5     Coefficient of the Length Dependence of A3, m
    73 Swa3            ''                          5     Coefficient of the Width Dependence of A3, m
    74 Tox             ''                          5     Thickness of the Oxide Layer, m
    75 Col             ''                         -1     Gate Overlap Capacitance per Unit Channel Width, F/m
    76 Ntr             ''                         -1     Coefficient of the Thermal Noise
    77 Nfr             ''                         -1     Coefficient of the Flicker Noise
    78 Vr              ''                          9     Reference Voltage, V
    79 Jsgbr           ''                         -1     Bottom Saturation Current Density due to Electron-Hole generation, A/m^2
    80 Jsdbr           ''                         -1     Bottom Saturation Current Density due to Diffusion from Back Contact, A/m^2
    81 Jsgsr           ''                         -1     Sidewall Saturation Current Density due to Electron-Hole generation, A/m
    82 Jsdsr           ''                         -1     Sidewall Saturation Current Density due to Diffusion from Back Contact, A/m
    83 Jsggr           ''                         -1     Gate-Edge Saturation Current Density due to Electron-Hole generation, A/m
    84 Jsdgr           ''                         -1     Gate-Edge Saturation Current Density due to Diffusion from Back Contact, A/m
    85 Cjbr            ''                         -1     Bottom Junction Capacitance, F/m^2
    86 Cjsr            ''                         -1     Sidewall Junction Capacitance, F/m
    87 Cjgr            ''                         -1     Gate-Edge Junction Capacitance, F/m
    88 Vdbr            ''                          9     Diffusion Voltage of the Bottom Junction, V
    89 Vdsr            ''                          9     Diffusion Voltage of the Sidewall Junction, V
    90 Vdgr            ''                          9     Diffusion Voltage of the Gate-Edge Junction, V
    91 Pb              ''                         -1     Bottom Junction Grading Coefficient
    92 Ps              ''                         -1     Sidewall Junction Grading Coefficient
    93 Pg              ''                         -1     Gate-Edge Junction Grading Coefficient
    94 Nb              ''                         -1     Emission Coefficient of the Bottom Forward Current
    95 Ns              ''                         -1     Emission Coefficient of the Sidewall Forward Current
    96 Ng              ''                         -1     Emission Coefficient of the Gate-Edge Forward Current
END_ELEMENT

MOS_Model9_Single MOS_Model9_Single 54
     1 NMOS            y_n1                       -1     Model Type - YES or NO
     2 PMOS            y_n0                       -1     Model Type - YES or NO
     3 Type            1                          -1     Type of model: 1:SINGLE_DEVICE 2:PROCESS_BASED
     4 Vto             ''                          9     Threshold Voltage at Zero Back-Bias, V
     5 Ko              ''                         -1     Low Back-Bias Body Factor, V^(1/2)
     6 K               ''                         -1     High Back-Bias Body Factor, V^(1/2)
     7 Phib            ''                          9     Surface Potential at Strong Inversion, V
     8 Vsbx            ''                          9     Transition Voltage for the Dual-K-Factor Model, V
     9 Bet             ''                         -1     Gain Factor, A/V^2
    10 The1            ''                         -1     Coefficient of the Mobility Reduction due to the Gate-Induced Field, 1/V
    11 The2            ''                         -1     Coefficient of the Mobility Reduction due to the Back-Bias, V^(-1/2)
    12 The3            ''                         -1     Coefficient of the Mobility Reduction due to the Lateral Field, 1/V
    13 Gam1            ''                          9     Coefficient for the Drain Induced Threshold Shift, V
    14 Etads           ''                         -1     Exponent of the Vds Dependence of GAM1
    15 Alp             ''                         -1     Factor of the Channel-Length Modulation
    16 Vp              ''                          9     Characteristic Voltage of Channel Length Modulation, V
    17 Gamoo           ''                         -1     Coefficient of the Drain-Induced Threshold Shift
    18 Etagam          ''                         -1     Exponent of the Back-Bias Dependence of GAMO
    19 Mo              ''                         -1     Factor of the Subthreshold Slope
    20 Etam            ''                         -1     Exponent of the Back-Bias Dependence of M
    21 Zet1            ''                         -1     Weak Inversion Correction Factor
    22 Vsbt            ''                          9     Limiting Voltage of the VSB Dependence of M and GAMO, V
    23 A1              ''                         -1     Factor of the Weak-Avalanche Current
    24 A2              ''                          9     Exponent of the Weak-Avalanche Current, V
    25 A3              ''                         -1     Factor of Vds above which Weak-Avalanche Occurs
    26 Cox             ''                          4     Gate to Channel Capacitance, F
    27 Cgdo            ''                          4     Gate-Drain Overlap Capacitance, F
    28 Cgso            ''                          4     Gate-Source Overlap Capacitance, F
    29 Nt              ''                         -1     Coefficient of the Thermal Noise
    30 Nf              ''                         -1     Coefficient of the Flicker Noise
    31 Isgb            ''                         -1     Bottom Saturation Current Density due to Electron-Hole generation, A
    32 Isdb            ''                         10     Bottom Saturation Current Density due to Diffusion from Back Contact, A
    33 Isgs            ''                         10     Sidewall Saturation Current Density due to Electron-Hole generation, A
    34 Isds            ''                         10     Sidewall Saturation Current Density due to Diffusion from Back Contact, A
    35 Isgg            ''                         10     Gate-Edge Saturation Current Density due to Electron-Hole Generation, A
    36 Isdg            ''                         10     Gate-Edge Saturation Current Density due to Diffusion from Back Contact, A
    37 Cjb             ''                          4     Bottom Junction Capacitance, F
    38 Cjs             ''                          4     Sidewall Junction Capacitance, F
    39 Cjg             ''                          4     Gate-Edge Junction Capacitance, F
    40 Vdb             ''                          9     Diffusion Voltage of the Bottom Junction, V
    41 Vds             ''                          9     Diffusion Voltage of the Sidewall Junction, V
    42 Vdg             ''                          9     Diffusion Voltage of the Gate-Edge Junction, V
    43 Pb              ''                         -1     Bottom Junction Grading Coefficient
    44 Ps              ''                         -1     Sidewall Junction Grading Coefficient
    45 Pg              ''                         -1     Gate-Edge Junction Grading Coefficient
    46 Nb              ''                         -1     Emission Coefficient of the Bottom Forward Current
    47 Ns              ''                         -1     Emission Coefficient of the Sidewall Forward Current
    48 Ng              ''                         -1     Emission Coefficient of the Gate-Edge Forward Current
    49 wVsubfwd        ''                          9     Substrate Junction Forward Bias (warning), V
    50 wBvsub          ''                          9     Substrate Junction Reverse Breakdown Voltage (warning), V
    51 wBvg            ''                          9     Gate Oxide Breakdown Voltage (warning), V
    52 wBvds           ''                          9     Drain-Source Breakdown Voltage (warning), V
    53 wIdsmax         ''                         10     Maximum Drain-Source Current (warning), A
    54 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

MRIND     MRIND      9
     1 Subst           MSub1                      -1     Substrate instance name
     2 N               3.0                        -1     Number of turns
     3 L1              30.0mils                    5     Length of second outermost segment
     4 L2              20.0mils                    5     Length of outermost segment
     5 W               1.0mils                     5     Conductor width
     6 S               1.0mils                     5     Conductor spacing
     7 Temp            ''                         12     Physical temperature
     8 W1              1.0mils                     5     (for Layout option) Width of line that connects to pin 1
     9 WB              1.0mils                     5     (for Layout option) Width of line that connects to pin 2
END_ELEMENT

MRINDELA  MRINDELA  18
     1 Subst           MSub1                      -1     Substrate instance name
     2 Ns              7                          -1     Number of segments
     3 L1              11.4mils                    5     Length of first segment
     4 L2              9.4mils                     5     Length of second segment
     5 L3              7.4mils                     5     Length of third segment
     6 Ln              0mils                       5     Length of last segment
     7 W               0.45mils                    5     Conductor width
     8 S               0.35mils                    5     Conductor spacing
     9 Hi              12.5mils                    5     Elevation of inductor above substrate
    10 Ti              0.118mils                   5     Thickness of conductors
    11 Ri              1.0                        -1     Resistivity (normalized to gold) of conductors
    12 Sx              0mils                       5     Spacing limit between support post
    13 Cc              2.0                        -1     Coeff. for capacitance of corner support posts
    14 Cs              1.0                        -1     Coeff. for capacitance of support posts along segment
    15 Wu              0.4mils                     5     Width of underpass strip conductor
    16 Au              0.0deg                      7     Angle of departure from innermost segment
    17 UE              4.0mils                     5     Extension of bridge beyond inductor
    18 Temp            ''                         12     Physical temperature
END_ELEMENT

MRINDNBR  MRINDNBR   9
     1 Subst           MSub1                      -1     Substrate instance name
     2 Ns              7                          -1     Number of segments
     3 L1              15.0mils                    5     Length of first segment
     4 L2              10.0mils                    5     Length of second segment
     5 L3              8.0mils                     5     Length of third segment
     6 Ln              0mils                       5     Length of last segment
     7 W               1.0mils                     5     Conductor width
     8 S               1.0mils                     5     Conductor spacing
     9 Temp            ''                         12     Physical temperature
END_ELEMENT

MRINDWBR  MRINDWBR  14
     1 Subst           MSub1                      -1     Substrate instance name
     2 Ns              7                          -1     Number of segments
     3 L1              11.4mils                    5     Length of first segment
     4 L2              9.4mils                     5     Length of second segment
     5 L3              7.4mils                     5     Length of third segment
     6 Ln              0mils                       5     Length of last segment
     7 W               0.45mils                    5     Conductor width
     8 S               0.35mils                    5     Conductor spacing
     9 Dw              0.4mils                     5     Diameter of bridge round wire
    10 Rb              0.1                        -1     Resistivity (normalized to gold) of bridge wire
    11 Hw              15.0mils                    5     Height of wire bridge above the inductor
    12 Aw              0.0deg                      7     Angle of departure from innermost segment
    13 WE              4.0mils                     5     Extension of bridge beyond inductor
    14 Temp            ''                         12     Physical temperature
END_ELEMENT

MRSTUB    MRSTUB     5
     1 Subst           MSub1                      -1     Substrate instance name
     2 Wi              25.0mils                    5     Width of input line
     3 L               100.0mils                   5     Length of stub
     4 Angle           70deg                       7     Angle subtended by stub
     5 Temp            ''                         12     Physical temperature
END_ELEMENT

MSIND     MSIND      8
     1 Subst           MSub1                      -1     Substrate instance name
     2 N               2.0                        -1     Number of turns
     3 Ri              50.0mils                    5     Inner radius
     4 W               10.0mils                    5     Conductor width
     5 S               10.0mils                    5     Conductor spacing
     6 Temp            ''                         12     Physical temperature
     7 W1              10.0mils                    5     (for Layout option) Width of strip ending at pin 1
     8 W2              10.0mils                    5     (for Layout option) Width of strip ending at pin 2
END_ELEMENT

MSLIT     MSLIT      5
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Width
     3 D               15.0mils                    5     Depth of slit
     4 L               10.0mils                    5     Length of slit
     5 Temp            ''                         12     Physical temperature
END_ELEMENT

MSOP      MSOP       8
     1 Subst           MSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Width of input line
     3 D1              5.0mils                     5     Distance Between Centerlines of Input Line and Stub Pair
     4 W2              10.0mils                    5     Width of output line
     5 D2              5.0mils                     5     Distance Between centerlines of output line and Stub Pair
     6 Ws              10.0mils                    5     Width of the stubs
     7 Ls              30.0mils                    5     Combined length of the stubs
     8 Temp            ''                         12     Physical temperature
END_ELEMENT

MSTEP     MSTEP      4
     1 Subst           MSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Conductor width at pin 1
     3 W2              50.0mils                    5     Conductor width at pin 2
     4 Temp            ''                         12     Physical temperature
     5 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MSUB      MSUB      14
     1 H               10.0mils                    5     Substrate thickness
     2 Er              9.6                        -1     Relative dielectric constant
     3 Mur             1                          -1     Relative permeability
     4 Cond            1.0E+306                   -1     Conductor conductivity
     5 Hu              1.0E+30m                    5     Cover height
     6 T               0m                          5     Conductor thickness
     7 TanD            0                          -1     Dielectric loss tangent
     8 Rough           0m                          5     Conductor surface roughness
     9 Cond1           cond                       -1     (for Layout option) Layer to which cond is mapped
    10 Cond2           cond2                      -1     (for Layout option) Layer to which cond2 is mapped
    11 Diel1           diel                       -1     (for Layout option) Layer to which diel is mapped
    12 Diel2           diel2                      -1     (for Layout option) Layer to which diel2 is mapped
    13 Hole            hole                       -1     (for Layout option) Layer to which hole is mapped
    14 Res             resi                       -1     (for Layout option) Layer to which resi is mapped
END_ELEMENT

MTAPER    MTAPER     5
     1 Subst           MSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Line width at pin 1
     3 W2              20.0mils                    5     Line width at pin 2
     4 L               100.0mils                   5     Line length
     5 Temp            ''                         12     Physical temperature
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MTEE      MTEE       5
     1 Subst           MSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Conductor width at pin 1
     3 W2              25.0mils                    5     Conductor width at pin 2
     4 W3              50.0mils                    5     Conductor width at pin 3
     5 Temp            ''                         12     Physical temperature
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MTEEO     MTEEO      5
     1 Subst           MSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Conductor width at pin 1
     3 W2              25.0mils                    5     Conductor width at pin 2
     4 W3              50.0mils                    5     Conductor width at pin 3
     5 Temp            ''                         12     Physical temperature
END_ELEMENT

MTFC      MTFC      13
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               50.0mils                    5     Dielectric width common to both metal plates
     3 L               50.0mils                    5     Dielectric length common to both metal plates
     4 CPUA            300.0pF                     4     Capacitance per unit area, (pF/mm^2)
     5 T               0.2mils                     5     Thickness of capacitor dielectric
     6 RsT             0.0ohm                      1     Sheet resistance of top metal plate
     7 RsB             0.0ohm                      1     Sheet resistance of bottom metal plate
     8 TT              0mils                       5     Thickness of top metal plate
     9 TB              0mils                       5     Thickness of bottom metal plate
    10 COB             0mils                       5     Bottom conductor overlap
    11 Temp            ''                         12     Physical temperature
    12 COT             0mils                       5     (for Layout option) Top conductor overlap
    13 DO              0mils                       5     (for Layout option) Dielectric overlap
END_ELEMENT

MUC10     MUC10     65
     1 L1              0.5nH                       3     Self Inductance of Coil 1
     2 R1              0.1ohm                      1     Resistance of Coil 1
     3 L2              1.0nH                       3     Self Inductance of Coil 2
     4 R2              0.2ohm                      1     Resistance of Coil 2
     5 L3              1.5nH                       3     Self Inductance of Coil 3
     6 R3              0.3ohm                      1     Resistance of Coil 3
     7 L4              2.0nH                       3     Self Inductance of Coil 4
     8 R4              0.4ohm                      1     Resistance of Coil 4
     9 L5              2.5nH                       3     Self Inductance of Coil 5
    10 R5              0.5ohm                      1     Resistance of Coil 5
    11 L6              3.0nH                       3     Self Inductance of Coil 6
    12 R6              0.6ohm                      1     Resistance of Coil 6
    13 L7              3.5nH                       3     Self Inductance of Coil 7
    14 R7              0.7ohm                      1     Resistance of Coil 7
    15 L8              4.0nH                       3     Self Inductance of Coil 8
    16 R8              0.8ohm                      1     Resistance of Coil 8
    17 L9              4.5nH                       3     Self Inductance of Coil 9
    18 R9              0.9ohm                      1     Resistance of Coil 9
    19 L10             5.0nH                       3     Self Inductance of Coil 10
    20 R10             1.0ohm                      1     Resistance of Coil 10
    21 K12             0.1                        -1     Coupling coefficient - coils 1 and 2
    22 K13             -0.1                       -1     Coupling coefficient - coils 1 and 3
    23 K14             0.2                        -1     Coupling coefficient - coils 1 and 4
    24 K15             -0.2                       -1     Coupling coefficient - coils 1 and 5
    25 K16             0.3                        -1     Coupling coefficient - coils 1 and 6
    26 K17             -0.3                       -1     Coupling coefficient - coils 1 and 7
    27 K18             0.4                        -1     Coupling coefficient - coils 1 and 8
    28 K19             -0.4                       -1     Coupling coefficient - coils 1 and 9
    29 K110            0.5                        -1     Coupling coefficient - coils 1 and 10
    30 K23             -0.5                       -1     Coupling coefficient - coils 2 and 3
    31 K24             0.6                        -1     Coupling coefficient - coils 2 and 4
    32 K25             -0.6                       -1     Coupling coefficient - coils 2 and 5
    33 K26             0.7                        -1     Coupling coefficient - coils 2 and 6
    34 K27             -0.7                       -1     Coupling coefficient - coils 2 and 7
    35 K28             0.8                        -1     Coupling coefficient - coils 2 and 8
    36 K29             -0.8                       -1     Coupling coefficient - coils 2 and 9
    37 K210            0.9                        -1     Coupling coefficient - coils 2 and 10
    38 K34             -0.9                       -1     Coupling coefficient - coils 3 and 4
    39 K35             0.91                       -1     Coupling coefficient - coils 3 and 5
    40 K36             -0.91                      -1     Coupling coefficient - coils 3 and 6
    41 K37             0.92                       -1     Coupling coefficient - coils 3 and 7
    42 K38             -0.92                      -1     Coupling coefficient - coils 3 and 8
    43 K39             0.93                       -1     Coupling coefficient - coils 3 and 9
    44 K310            -0.93                      -1     Coupling coefficient - coils 3 and 10
    45 K45             0.94                       -1     Coupling coefficient - coils 4 and 5
    46 K46             -0.94                      -1     Coupling coefficient - coils 4 and 6
    47 K47             0.95                       -1     Coupling coefficient - coils 4 and 7
    48 K48             -0.95                      -1     Coupling coefficient - coils 4 and 8
    49 K49             0.96                       -1     Coupling coefficient - coils 4 and 9
    50 K410            -0.96                      -1     Coupling coefficient - coils 4 and 10
    51 K56             0.97                       -1     Coupling coefficient - coils 5 and 6
    52 K57             -0.97                      -1     Coupling coefficient - coils 5 and 7
    53 K58             0.98                       -1     Coupling coefficient - coils 5 and 8
    54 K59             -0.98                      -1     Coupling coefficient - coils 5 and 9
    55 K510            0.99                       -1     Coupling coefficient - coils 5 and 10
    56 K67             -0.99                      -1     Coupling coefficient - coils 6 and 7
    57 K68             0.991                      -1     Coupling coefficient - coils 6 and 8
    58 K69             -0.991                     -1     Coupling coefficient - coils 6 and 9
    59 K610            0.992                      -1     Coupling coefficient - coils 6 and 10
    60 K78             -0.992                     -1     Coupling coefficient - coils 7 and 8
    61 K79             0.993                      -1     Coupling coefficient - coils 7 and 9
    62 K710            -0.993                     -1     Coupling coefficient - coils 7 and 10
    63 K89             0.994                      -1     Coupling coefficient - coils 8 and 9
    64 K810            -0.994                     -1     Coupling coefficient - coils 8 and 10
    65 K910            0.995                      -1     Coupling coefficient - coils 9 and 10
END_ELEMENT

MUC2      MUC2       5
     1 L1              0.5nH                       3     Self Inductance of Coil 1
     2 R1              0.1ohm                      1     Resistance of Coil 1
     3 L2              1.0nH                       3     Self Inductance of Coil 2
     4 R2              0.2ohm                      1     Resistance of Coil 2
     5 K12             0.1                        -1     Coupling coefficient - coils 1 and 2
END_ELEMENT

MUC3      MUC3       9
     1 L1              0.5nH                       3     Self Inductance of Coil 1
     2 R1              0.1ohm                      1     Resistance of Coil 1
     3 L2              1.0nH                       3     Self Inductance of Coil 2
     4 R2              0.2ohm                      1     Resistance of Coil 2
     5 L3              1.5nH                       3     Self Inductance of Coil 3
     6 R3              0.3ohm                      1     Resistance of Coil 3
     7 K12             0.1                        -1     Coupling coefficient - coils 1 and 2
     8 K13             -0.1                       -1     Coupling coefficient - coils 1 and 3
     9 K23             0.2                        -1     Coupling coefficient - coils 2 and 3
END_ELEMENT

MUC4      MUC4      14
     1 L1              0.5nH                       3     Self Inductance of Coil 1
     2 R1              0.1ohm                      1     Resistance of Coil 1
     3 L2              1.5nH                       3     Self Inductance of Coil 2
     4 R2              0.2ohm                      1     Resistance of Coil 2
     5 L3              2.0nH                       3     Self Inductance of Coil 3
     6 R3              0.3ohm                      1     Resistance of Coil 3
     7 L4              2.5nH                       3     Self Inductance of Coil 4
     8 R4              0.4ohm                      1     Resistance of Coil 4
     9 K12             0.1                        -1     Coupling coefficient - coils 1 and 2
    10 K13             -0.1                       -1     Coupling coefficient - coils 1 and 3
    11 K14             0.2                        -1     Coupling coefficient - coils 1 and 4
    12 K23             -0.2                       -1     Coupling coefficient - coils 2 and 3
    13 K24             0.3                        -1     Coupling coefficient - coils 2 and 4
    14 K34             -0.3                       -1     Coupling coefficient - coils 3 and 4
END_ELEMENT

MUC5      MUC5      20
     1 L1              0.5nH                       3     Self Inductance of Coil 1
     2 R1              0.1ohm                      1     Resistance of Coil 1
     3 L2              1.5nH                       3     Self Inductance of Coil 2
     4 R2              0.2ohm                      1     Resistance of Coil 2
     5 L3              2.0nH                       3     Self Inductance of Coil 3
     6 R3              0.3ohm                      1     Resistance of Coil 3
     7 L4              3.0nH                       3     Self Inductance of Coil 4
     8 R4              0.5ohm                      1     Resistance of Coil 4
     9 L5              2.5nH                       3     Self Inductance of Coil 5
    10 R5              0.4ohm                      1     Resistance of Coil 5
    11 K12             0.1                        -1     Coupling coefficient - coils 1 and 2
    12 K13             -0.1                       -1     Coupling coefficient - coils 1 and 3
    13 K14             0.2                        -1     Coupling coefficient - coils 1 and 4
    14 K15             -0.2                       -1     Coupling coefficient - coils 1 and 5
    15 K23             0.3                        -1     Coupling coefficient - coils 2 and 3
    16 K24             -0.3                       -1     Coupling coefficient - coils 2 and 4
    17 K25             0.4                        -1     Coupling coefficient - coils 2 and 5
    18 K34             -0.4                       -1     Coupling coefficient - coils 3 and 4
    19 K35             0.5                        -1     Coupling coefficient - coils 3 and 5
    20 K45             -0.5                       -1     Coupling coefficient - coils 4 and 5
END_ELEMENT

MUC6      MUC6      27
     1 L1              0.5nH                       3     Self Inductance of Coil 1
     2 R1              0.1ohm                      1     Resistance of Coil 1
     3 L2              1.0nH                       3     Self Inductance of Coil 2
     4 R2              0.2ohm                      1     Resistance of Coil 2
     5 L3              1.5nH                       3     Self Inductance of Coil 3
     6 R3              0.3ohm                      1     Resistance of Coil 3
     7 L4              2.0nH                       3     Self Inductance of Coil 4
     8 R4              0.4ohm                      1     Resistance of Coil 4
     9 L5              2.5nH                       3     Self Inductance of Coil 5
    10 R5              0.5ohm                      1     Resistance of Coil 5
    11 L6              3.0nH                       3     Self Inductance of Coil 6
    12 R6              0.6ohm                      1     Resistance of Coil 6
    13 K12             0.1                        -1     Coupling coefficient - coils 1 and 2
    14 K13             -0.1                       -1     Coupling coefficient - coils 1 and 3
    15 K14             0.2                        -1     Coupling coefficient - coils 1 and 4
    16 K15             -0.2                       -1     Coupling coefficient - coils 1 and 5
    17 K16             0.3                        -1     Coupling coefficient - coils 1 and 6
    18 K23             -0.3                       -1     Coupling coefficient - coils 2 and 3
    19 K24             0.4                        -1     Coupling coefficient - coils 2 and 4
    20 K25             -0.4                       -1     Coupling coefficient - coils 2 and 5
    21 K26             0.5                        -1     Coupling coefficient - coils 2 and 6
    22 K34             -0.5                       -1     Coupling coefficient - coils 3 and 4
    23 K35             0.6                        -1     Coupling coefficient - coils 3 and 5
    24 K36             -0.6                       -1     Coupling coefficient - coils 3 and 6
    25 K45             0.7                        -1     Coupling coefficient - coils 4 and 5
    26 K46             -0.7                       -1     Coupling coefficient - coils 4 and 6
    27 K56             0.8                        -1     Coupling coefficient - coils 5 and 6
END_ELEMENT

MUC7      MUC7      35
     1 L1              0.5nH                       3     Self Inductance of Coil 1
     2 R1              0.1ohm                      1     Resistance of Coil 1
     3 L2              1.0nH                       3     Self Inductance of Coil 2
     4 R2              0.2ohm                      1     Resistance of Coil 2
     5 L3              1.5nH                       3     Self Inductance of Coil 3
     6 R3              0.3ohm                      1     Resistance of Coil 3
     7 L4              2.0nH                       3     Self Inductance of Coil 4
     8 R4              0.4ohm                      1     Resistance of Coil 4
     9 L5              2.5nH                       3     Self Inductance of Coil 5
    10 R5              0.5ohm                      1     Resistance of Coil 5
    11 L6              3.0nH                       3     Self Inductance of Coil 6
    12 R6              0.6ohm                      1     Resistance of Coil 6
    13 L7              3.5nH                       3     Self Inductance of Coil 7
    14 R7              0.7ohm                      1     Resistance of Coil 7
    15 K12             0.1                        -1     Coupling coefficient - coils 1 and 2
    16 K13             -0.1                       -1     Coupling coefficient - coils 1 and 3
    17 K14             0.2                        -1     Coupling coefficient - coils 1 and 4
    18 K15             -0.2                       -1     Coupling coefficient - coils 1 and 5
    19 K16             0.3                        -1     Coupling coefficient - coils 1 and 6
    20 K17             -0.3                       -1     Coupling coefficient - coils 1 and 7
    21 K23             0.4                        -1     Coupling coefficient - coils 2 and 3
    22 K24             -0.4                       -1     Coupling coefficient - coils 2 and 4
    23 K25             0.5                        -1     Coupling coefficient - coils 2 and 5
    24 K26             -0.5                       -1     Coupling coefficient - coils 2 and 6
    25 K27             0.6                        -1     Coupling coefficient - coils 2 and 7
    26 K34             -0.6                       -1     Coupling coefficient - coils 3 and 4
    27 K35             0.7                        -1     Coupling coefficient - coils 3 and 5
    28 K36             -0.7                       -1     Coupling coefficient - coils 3 and 6
    29 K37             0.8                        -1     Coupling coefficient - coils 3 and 7
    30 K45             -0.8                       -1     Coupling coefficient - coils 4 and 5
    31 K46             0.9                        -1     Coupling coefficient - coils 4 and 6
    32 K47             -0.9                       -1     Coupling coefficient - coils 4 and 7
    33 K56             0.91                       -1     Coupling coefficient - coils 5 and 6
    34 K57             -0.91                      -1     Coupling coefficient - coils 5 and 7
    35 K67             0.92                       -1     Coupling coefficient - coils 6 and 7
END_ELEMENT

MUC8      MUC8      44
     1 L1              0.5nH                       3     Self Inductance of Coil 1
     2 R1              0.1ohm                      1     Resistance of Coil 1
     3 L2              1.0nH                       3     Self Inductance of Coil 2
     4 R2              0.2ohm                      1     Resistance of Coil 2
     5 L3              1.5nH                       3     Self Inductance of Coil 3
     6 R3              0.3ohm                      1     Resistance of Coil 3
     7 L4              2.0nH                       3     Self Inductance of Coil 4
     8 R4              0.4ohm                      1     Resistance of Coil 4
     9 L5              2.5nH                       3     Self Inductance of Coil 5
    10 R5              0.5ohm                      1     Resistance of Coil 5
    11 L6              3.0nH                       3     Self Inductance of Coil 6
    12 R6              0.6ohm                      1     Resistance of Coil 6
    13 L7              3.5nH                       3     Self Inductance of Coil 7
    14 R7              0.7ohm                      1     Resistance of Coil 7
    15 L8              4.0nH                       3     Self Inductance of Coil 8
    16 R8              0.8ohm                      1     Resistance of Coil 8
    17 K12             0.1                        -1     Coupling coefficient - coils 1 and 2
    18 K13             -0.1                       -1     Coupling coefficient - coils 1 and 3
    19 K14             0.2                        -1     Coupling coefficient - coils 1 and 4
    20 K15             -0.2                       -1     Coupling coefficient - coils 1 and 5
    21 K16             0.3                        -1     Coupling coefficient - coils 1 and 6
    22 K17             -0.3                       -1     Coupling coefficient - coils 1 and 7
    23 K18             0.4                        -1     Coupling coefficient - coils 1 and 8
    24 K23             -0.4                       -1     Coupling coefficient - coils 2 and 3
    25 K24             0.5                        -1     Coupling coefficient - coils 2 and 4
    26 K25             -0.5                       -1     Coupling coefficient - coils 2 and 5
    27 K26             0.6                        -1     Coupling coefficient - coils 2 and 6
    28 K27             -0.6                       -1     Coupling coefficient - coils 2 and 7
    29 K28             0.7                        -1     Coupling coefficient - coils 2 and 8
    30 K34             -0.7                       -1     Coupling coefficient - coils 3 and 4
    31 K35             0.8                        -1     Coupling coefficient - coils 3 and 5
    32 K36             -0.8                       -1     Coupling coefficient - coils 3 and 6
    33 K37             0.9                        -1     Coupling coefficient - coils 3 and 7
    34 K38             -0.9                       -1     Coupling coefficient - coils 3 and 8
    35 K45             0.91                       -1     Coupling coefficient - coils 4 and 5
    36 K46             -0.91                      -1     Coupling coefficient - coils 4 and 6
    37 K47             0.92                       -1     Coupling coefficient - coils 4 and 7
    38 K48             -0.92                      -1     Coupling coefficient - coils 4 and 8
    39 K56             0.93                       -1     Coupling coefficient - coils 5 and 6
    40 K57             -0.93                      -1     Coupling coefficient - coils 5 and 7
    41 K58             0.94                       -1     Coupling coefficient - coils 5 and 8
    42 K67             -0.94                      -1     Coupling coefficient - coils 6 and 7
    43 K68             0.95                       -1     Coupling coefficient - coils 6 and 8
    44 K78             -0.95                      -1     Coupling coefficient - coils 7 and 8
END_ELEMENT

MUC9      MUC9      54
     1 L1              0.5nH                       3     Self Inductance of Coil 1
     2 R1              0.1ohm                      1     Resistance of Coil 1
     3 L2              1.0nH                       3     Self Inductance of Coil 2
     4 R2              0.2ohm                      1     Resistance of Coil 2
     5 L3              1.5nH                       3     Self Inductance of Coil 3
     6 R3              0.3ohm                      1     Resistance of Coil 3
     7 L4              2.0nH                       3     Self Inductance of Coil 4
     8 R4              0.4ohm                      1     Resistance of Coil 4
     9 L5              2.5nH                       3     Self Inductance of Coil 5
    10 R5              0.5ohm                      1     Resistance of Coil 5
    11 L6              3.0nH                       3     Self Inductance of Coil 6
    12 R6              0.6ohm                      1     Resistance of Coil 6
    13 L7              3.5nH                       3     Self Inductance of Coil 7
    14 R7              0.7ohm                      1     Resistance of Coil 7
    15 L8              4.0nH                       3     Self Inductance of Coil 8
    16 R8              0.8ohm                      1     Resistance of Coil 8
    17 L9              4.5nH                       3     Self Inductance of Coil 9
    18 R9              0.9ohm                      1     Resistance of Coil 9
    19 K12             0.1                        -1     Coupling coefficient - coils 1 and 2
    20 K13             -0.1                       -1     Coupling coefficient - coils 1 and 3
    21 K14             0.2                        -1     Coupling coefficient - coils 1 and 4
    22 K15             -0.2                       -1     Coupling coefficient - coils 1 and 5
    23 K16             0.3                        -1     Coupling coefficient - coils 1 and 6
    24 K17             -0.3                       -1     Coupling coefficient - coils 1 and 7
    25 K18             0.4                        -1     Coupling coefficient - coils 1 and 8
    26 K19             -0.4                       -1     Coupling coefficient - coils 1 and 9
    27 K23             0.5                        -1     Coupling coefficient - coils 2 and 3
    28 K24             -0.5                       -1     Coupling coefficient - coils 2 and 4
    29 K25             0.6                        -1     Coupling coefficient - coils 2 and 5
    30 K26             -0.6                       -1     Coupling coefficient - coils 2 and 6
    31 K27             0.7                        -1     Coupling coefficient - coils 2 and 7
    32 K28             -0.7                       -1     Coupling coefficient - coils 2 and 8
    33 K29             0.8                        -1     Coupling coefficient - coils 2 and 9
    34 K34             -0.8                       -1     Coupling coefficient - coils 3 and 4
    35 K35             0.9                        -1     Coupling coefficient - coils 3 and 5
    36 K36             -0.9                       -1     Coupling coefficient - coils 3 and 6
    37 K37             0.91                       -1     Coupling coefficient - coils 3 and 7
    38 K38             -0.91                      -1     Coupling coefficient - coils 3 and 8
    39 K39             0.92                       -1     Coupling coefficient - coils 3 and 9
    40 K45             -0.92                      -1     Coupling coefficient - coils 4 and 5
    41 K46             0.93                       -1     Coupling coefficient - coils 4 and 6
    42 K47             -0.93                      -1     Coupling coefficient - coils 4 and 7
    43 K48             0.94                       -1     Coupling coefficient - coils 4 and 8
    44 K49             -0.94                      -1     Coupling coefficient - coils 4 and 9
    45 K56             0.95                       -1     Coupling coefficient - coils 5 and 6
    46 K57             -0.95                      -1     Coupling coefficient - coils 5 and 7
    47 K58             0.96                       -1     Coupling coefficient - coils 5 and 8
    48 K59             -0.96                      -1     Coupling coefficient - coils 5 and 9
    49 K67             0.97                       -1     Coupling coefficient - coils 6 and 7
    50 K68             -0.97                      -1     Coupling coefficient - coils 6 and 8
    51 K69             0.98                       -1     Coupling coefficient - coils 6 and 9
    52 K78             -0.98                      -1     Coupling coefficient - coils 7 and 8
    53 K79             0.99                       -1     Coupling coefficient - coils 7 and 9
    54 K89             -0.99                      -1     Coupling coefficient - coils 8 and 9
END_ELEMENT

Map1Circle Map1Circle  1
     1 Function        list(our_map1cir=map1_circle(S,51)) -1     map1_circle(2x2 S_matrix,num_of_pts)
END_ELEMENT

Map2Circle Map2Circle  1
     1 Function        list(our_map2cir=map2_circle(S,51)) -1     map2_circle(2x2 S_matrix,num_of_pts)
END_ELEMENT

Materka_Model Materka_Model 44
     1 NFET            y_n1                       -1     Model Type - YES or NO
     2 PFET            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          4                          -1     1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
     4 Idss            ''                         10     Model 4: Idss value, A
     5 Vto             ''                          9     Value of V1 below which Ids = Ids(V1=VTO,Vds), V
     6 Alpha           ''                          9     Saturation voltage, V 
     7 Beta2           ''                         -2     Coefficient for pinch-off change with respect to VDS, 1/V
     8 Tau             ''                          6     Transit time under gate, S
     9 Lambda          ''                         -1     Channel length modulation parameter, 1/V
    10 Rin             ''                          1     Channel resistance, Ohm
    11 Fc              ''                         -1     Coefficient for forward-bias depletion cap.
    12 Gscap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    13 Cgs             ''                          4     Zero-bias G-S junction cap., F
    14 Gdcap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    15 Cgd             ''                          4     Zero-bias G-D junction cap., F
    16 Rd              ''                          1     Drain ohmic resistance, Ohm
    17 Rg              ''                          1     Gate resistance, Ohm
    18 Rs              ''                          1     Source ohmic resistance, Ohm
    19 Ld              ''                          3     Drain inductance, H
    20 Lg              ''                          3     Gate inductance, H
    21 Ls              ''                          3     Source inductance, H
    22 Gsfwd           ''                         -1     0=none 1=linear 2=diode
    23 Gsrev           ''                         -1     0=none 1=linear 2=diode
    24 Gdfwd           ''                         -1     0=none 1=linear 2=diode
    25 Gdrev           ''                         -1     0=none 1=linear 2=diode
    26 Vbi             ''                          9     Built-in gate potential, V
    27 Vjr             ''                          9     Breakdown junction potential, V
    28 Is              ''                         10     Gate junction saturation current, A
    29 Ir              ''                         10     Gate rev saturation current, A
    30 Imax            ''                         10     Explosion current, A
    31 N               ''                         -1     Gate Junction emission coefficient
    32 Vbr             ''                          9     Gate junction reverse bias breakdown voltage (0. Means Infinity), V
    33 Fnc             ''                          0     Flicker noise corner frequency
    34 R               ''                         -1     Gate noise coefficient
    35 P               ''                         -1     Drain noise coefficient
    36 C               ''                         -1     Gate-drain noise correlation coefficient.
    37 Taumdl          y_n0                       -1     Use 2nd order Bessel polynomial to model tau effect in transient
    38 Tnom            ''                         12     Nominal ambient temperature, Celsius
    39 wVgfwd          ''                          9     Gate junction forward bias (warning), V
    40 wBvgs           ''                          9     Gate-source reverse breakdown voltage (warning), V
    41 wBvgd           ''                          9     Gate-drain reverse breakdown voltage (warning), V
    42 wBvds           ''                          9     Drain-source breakdown voltage (warning), V
    43 wIdsmax         ''                         10     Maximum drain-source current (warning), A
    44 wPmax           ''                          8     Maximum power dissipation (warning), W
END_ELEMENT

MaxGain   MaxGain    1
     1 Function        list(our_maxg=max_gain(S)) -1     max_gain(2x2 S_matrix)
END_ELEMENT

MeasEqn   MeasEqn    1
     1 Meas            list(your_measurement_equation_here) -1     simulation measurement
END_ELEMENT

Mesfet_Form Mesfet_Form 81
     1 NFET            0                          -1     Model Type - YES or NO, (default: YES)
     2 PFET            0                          -1     Model Type - YES or NO, (default: NO )
     3 Idsmod          0                          -1     1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
     4 Vto             ''                          9     Value of V1 below which Ids = Ids(V1=VTO,Vds), V, (default: -2.0)
     5 Beta            ''                         -2     Coefficient for pinch-off change with respect to VDS, 1/V, (default: 1.0e-4)
     6 Lambda          ''                         -1     Channel length modulation parameter, 1/V, (default: 0.0)
     7 Alpha           ''                         -1     Hyperbolic tangent function parameter, 1/V, (default: 2.0)
     8 Gamma           ''                         -1     Current saturation parameter, 1/V, (default: 2.0)
     9 A0              ''                         -1     Cubic polynomial IDS Equation Coefficient, A, (default: 0)
    10 A1              ''                         -1     Cubic polynomial IDS Equation Coefficient, A/V, (default: 0)
    11 A2              ''                         -1     Cubic polynomial IDS Equation Coefficient, A/V^2, (default: 0)
    12 A3              ''                         -1     Cubic polynomial IDS Equation Coefficient, A/V^3, (default: 0)
    13 Beta2           ''                         -2     Coefficient for pinch-off change with respect to VDS, 1/V, (default: 0)
    14 Rds0            ''                          1     DC conductance at Vgs=0, (default: 0)
    15 Vds0            ''                          9     Output voltage at which A0, A1, A2, A3 were evaluated, V, (default: 0)
    16 Vdsdc           ''                          9     Vds at `rds0 meaured bias, (default: 0)
    17 B               ''                         -1     Doping tail extending parameter, (default: 0.3)
    18 Vdss            ''                          9     Model 5: Drain current saturation voltage, V, (default: 1.0)
    19 Idss            ''                         10     Saturation drain current, A, (default: 0)
    20 Ta              ''                         -2     Model 5: a coef, (default: -0.2)
    21 Tb              ''                         -2     Model 5: b coef, (default: 0.6)
    22 Tm              ''                         -2     Model 5: m coef, (default: 3.0)
    23 Tau             ''                          6     Transit time under gate, S, (default: 0.0)
    24 A5              ''                         -1     Time delay proportionality constant for Vds, (default: fixed at 0.0 )
    25 Vcf             ''                         -1     Ids control voltage = vcf(freq) * Vg(s,d)c, (default: Defaults to complex(1.0, 0.0) )
    26 Tnom            ''                         12     Nominal ambient temperature, Celsius, (default: 25)
    27 Idstc           ''                         -1     Ids temperature coefficient, (default: 0.0)
    28 Q               ''                         -1     Power law exponent, dimensionless, (default: 2.0)
    29 Tqdelta         ''                         -1     drain current thermal factor, (default: 0.0)
    30 Tqgamma         ''                         -1     pinch-off change with vds, (default: 0.0)
    31 Betatce         ''                         -1     BETA Exponential Temperature Coefficient, %/Degree C, (default: 0.0)
    32 Vtotc           ''                         -1     VTO Temperature Coefficient, V/Degree C, (default: 0.0)
    33 Gamds           ''                         -1     describes effective pinch-off combined with Vds, (default: -0.01)
    34 Ucrit           ''                         -1     Parameter for critical field for mobility degradation, (default: 0.0)
    35 Vgexp           ''                         -1     Exponential parameter, (default: 2)
    36 Rin             ''                          1     Channel resistance, Ohm, (default: 0.0)
    37 Rgs             ''                          1     G-S resistance, Ohm, (default: 0.0)
    38 Rgd             ''                          1     Gate Drain resistance, Ohm, (default: 0.0)
    39 Rf              ''                          1     G-S effective forward-bias resistance (0. means infinity), Ohm, (default: 0.0)
    40 Vgr             ''                         -1     Vg(s,d)c includes voltage across Rg(s,d), (default: NO)
    41 Fc              ''                         -1     Coefficient for forward-bias depletion cap., (default: 0.5)
    42 Delta           ''                         -1     Output feedback coefficient, 1/W, (default: 0.2)
    43 Gscap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap, (default: LINEAR_CAP)
    44 Cgs             ''                          4     Zero-bias G-S junction cap., F, (default: 0.0)
    45 Gdcap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap, (default: LINEAR_CAP)
    46 Cgd             ''                          4     Zero-bias G-D junction cap., F, (default: 0.0)
    47 Bgf             ''                         -1     Backgate voltage = bgf(freq) * Vds, (default: defaulted to complex zero )
    48 Tqm             ''                         -1     Temperature coefficient for triquint junction capacitance, (default: 0.2)
    49 Vmax            ''                          9     Maximum junction voltage before capacitance limiting, (default: 0.5)
    50 Rg              ''                          1     Gate resistance, Ohm, (default: fixed at zero )
    51 Rd              ''                          1     Drain ohmic resistance, Ohm, (default: fixed at zero )
    52 Rs              ''                          1     Source ohmic resistance, Ohm, (default: fixed at zero )
    53 Lg              ''                          3     Gate inductance, H, (default: fixed at 0.0 )
    54 Ld              ''                          3     Drain inductance, H, (default: fixed at 0.0 )
    55 Ls              ''                          3     Source inductance, H, (default: fixed at 0.0 )
    56 Cds             ''                          4     Drain-source cap., F, (default: 0.0)
    57 Crf             ''                          4     Used with RDS to model freq. dependent output conductance, F, (default: 0.0)
    58 Rc              ''                          1     Used with CRF to model freq. dependent output conductance (0. means infinity), Ohm, (default: 0.0)
    59 Trg1            ''                         -1     Linear temperature coefficient for RG 1/degC, (default: 0.0	)
    60 Trd1            ''                         -1     Linear temperature coefficient for RD 1/degC, (default: 0.0	)
    61 Trs1            ''                         -1     Linear temperature coefficient for RS 1/degC, (default: 0.0	)
    62 Gsfwd           ''                         -1     0=none 1=linear 2=diode, (default: linear)
    63 Gsrev           ''                         -1     0=none 1=linear 2=diode, (default: none)
    64 Gdfwd           ''                         -1     0=none 1=linear 2=diode, (default: none)
    65 Gdrev           ''                         -1     0=none 1=linear 2=diode, (default: linear)
    66 R1              ''                          1     Approximate breakdown resistance (0. means infinity), Ohm, (default: 0.0)
    67 R2              ''                          1     Resistance relating breakdown voltage to channel currents, Ohm, (default: fixed at 0.0  (infinity) )
    68 Vbi             ''                          9     Built-in gate potential, V, (default: 0.85)
    69 Vbr             ''                          9     Gate junction reverse bias breakdown voltage (0. Means Infinity), V, (default: 1e100)
    70 Vjr             ''                          9     Breakdown junction potential, (default: 0.025)
    71 Is              ''                         10     Gate junction saturation current, A, (default: 1.0e-14)
    72 Ir              ''                         10     Gate rev saturation current, A, (default: 1.0e-14)
    73 Imax            ''                         10     Explosion current, A, (default: 1.6)
    74 Xti             ''                         -1     Saturation Current Temperature Exponent, (default: 3.0)
    75 Eg              ''                         -1     Energy Gap for Temperature Effect on IS, (default: 1.11)
    76 N               ''                         -1     Gate Junction emission coefficient, (default: 1)
    77 Fnc             ''                          0     Flicker noise corner frequency, Hertz (default: 0.0)
    78 R               ''                         -1     Gate noise coefficient, (default: 0.5	)
    79 P               ''                         -1     Drain noise coefficient, (default: 1.0)
    80 C               ''                         -1     Gate-drain noise correlation coefficient., (default: 0.9)
    81 AllParams       ''                         -1     Data Access Component (DAC) Based Parameters
END_ELEMENT

Mixer     Mixer     27
     1 SideBand        UPPER                      -1     Produce UPPER, LOWER, or BOTH Sidebands at Output Port
     2 ImageRej        ''                         13     Image Rejection in dB at Output Port
     3 LO_Rej1         ''                         13     LO to Input Port Rejection in dB
     4 LO_Rej2         ''                         13     LO to Output Port Rejection in dB
     5 RF_Rej          ''                         13     Input to Output Port Rejection in dB
     6 ConvGain        dbpolar(0,0)               -1     Conversion Gain, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
     7 S11             polar(0,0)                 -1     Forward Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
     8 S22             0+j*0                      -1     Reverse Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
     9 S33             0.                         -1     LO Port Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
    10 PminLO          ''                         -1     Minimum LO Power in dBm before Starvation
    11 NF              ''                         13     Noise Figure in dB
    12 NFmin           ''                         13     Minimum Noise Figure at Sopt in dB
    13 Sopt            ''                         -1     Optimum Source Reflection for Minimum Noise Figure, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
    14 Rn              ''                          1     Equivalent Noise Resistance
    15 Z1              ''                          1     Reference Impedance for Port1
    16 Z2              ''                          1     Reference Impedance for Port2
    17 Z3              ''                          1     Reference Impedance for Port3
    18 GainCompType    LIST                       -1     Gain Compression Type, parameters from following LIST or in FILE
    19 GainCompFreq    ''                          0     Frequency at which Gain Compression is specified
    20 ReferToInput    OUTPUT                     -1     Power Levels refer to INPUT or OUTPUT
    21 SOI             ''                         -1     Second Order Intercept in dBm
    22 TOI             ''                         -1     Third Order Intercept in dBm
    23 Psat            ''                         -1     Power Saturation Point in dBm
    24 GainCompSat     ''                         13     Gain Compression at PSat in dB
    25 GainCompPower   ''                         -1     Power Level in dBm at Gain Compression Specified by GainComp
    26 GainComp        1.dB                       13     Gain Compression in dB at GainCompPower
    27 GainCompFile    ''                         -2     Filename for Gain Compression Data
END_ELEMENT

MixerIMT  MixerIMT  15
     1 SS_SideBand     UPPER                      -1     Produce UPPER or LOWER Sideband at Output Port For Linear Analysis
     2 ConvGain        dbpolar(0,0)               -1     Conversion Gain, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
     3 S11             polar(0,0)                 -1     Forward Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
     4 S22             0+j*0                      -1     Reverse Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
     5 S33             0.                         -1     LO Port Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
     6 NF              ''                         13     Noise Figure in dB
     7 NFmin           ''                         13     Minimum Noise Figure at Sopt in dB
     8 Sopt            ''                         -1     Optimum Source Reflection for Minimum Noise Figure, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
     9 Rn              ''                          1     Equivalent Noise Resistance
    10 R1              50.ohm                      1     Reference Resistance for Port1
    11 R2              50.ohm                      1     Reference Resistance for Port2
    12 R3              50.ohm                      1     Reference Resistance for Port3
    13 InThresh        ''                          9     Voltage Threshold for Input RF
    14 LoThresh        ''                          9     Voltage Threshold for Input LO
    15 IMT_File        ''                         -2     Filename Containing the Intermodulation Table
END_ELEMENT

Modified_Materka_Model Modified_Materka_Model 49
     1 NFET            y_n1                       -1     Model Type - YES or NO
     2 PFET            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          8                          -1     1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
     4 Idss            ''                         10     Model 4: Idss value, A
     5 Vto             ''                          9     Value of V1 below which Ids = Ids(V1=VTO,Vds), V
     6 Beta2           ''                         -2     Coefficient for pinch-off change with respect to VDS, 1/V
     7 Ee              ''                         -2     Exponent defining dependence of saturation current
     8 Ke              ''                          9     Parameter describing dependence on gate voltage, V
     9 Kg              ''                          9     Dependence on vgs of drain slope in linear region, V
    10 Sl              ''                         -2     Linear region slope of vgs=0 drain characteristic
    11 Ss              ''                         -2     Saturation region drain slope characteristic at vgs=0
    12 Tau             ''                          6     Transit time under gate, S
    13 Rgs             ''                          1     Channel resistance, Ohm
    14 Rgd             ''                          1     Gate Drain resistance, Ohm
    15 Fc              ''                         -1     Coefficient for forward-bias depletion cap.
    16 Gscap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    17 Cgs             ''                          4     Zero-bias G-S junction cap., F
    18 Gdcap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    19 Cgd             ''                          4     Zero-bias G-D junction cap., F
    20 Rd              ''                          1     Drain ohmic resistance, Ohm
    21 Rg              ''                          1     Gate resistance, Ohm
    22 Rs              ''                          1     Source ohmic resistance, Ohm
    23 Ld              ''                          3     Drain inductance, H
    24 Lg              ''                          3     Gate inductance, H
    25 Ls              ''                          3     Source inductance, H
    26 Cds             ''                          4     Drain-source cap., F
    27 Gsfwd           ''                         -1     0=none 1=linear 2=diode
    28 Gsrev           ''                         -1     0=none 1=linear 2=diode
    29 Gdfwd           ''                         -1     0=none 1=linear 2=diode
    30 Gdrev           ''                         -1     0=none 1=linear 2=diode
    31 Vbi             ''                          9     Built-in gate potential, V
    32 Vjr             ''                          9     Breakdown junction potential, V
    33 Is              ''                         10     Gate junction saturation current, A
    34 Ir              ''                         10     Gate rev saturation current, A
    35 Imax            ''                         10     Explosion current, A
    36 N               ''                         -1     Gate Junction emission coefficient
    37 Fnc             ''                          0     Flicker noise corner frequency
    38 Lambda          ''                         -1     Channel length modulation parameter, 1/V
    39 Vbr             ''                          9     Gate junction reverse bias breakdown voltage (0. Means Infinity), V
    40 R               ''                         -1     Gate noise coefficient
    41 P               ''                         -1     Drain noise coefficient
    42 C               ''                         -1     Gate-drain noise correlation coefficient.
    43 Taumdl          y_n0                       -1     Use 2nd order Bessel polynomial to model tau effect in transient
    44 wVgfwd          ''                          9     Gate junction forward bias (warning), V
    45 wBvgs           ''                          9     Gate-source reverse breakdown voltage (warning), V
    46 wBvgd           ''                          9     Gate-drain reverse breakdown voltage (warning), V
    47 wBvds           ''                          9     Drain-source breakdown voltage (warning), V
    48 wIdsmax         ''                         10     Maximum drain-source current (warning), A
    49 wPmax           ''                          8     Maximum power dissipation (warning), W
END_ELEMENT

Mu        Mu         1
     1 Function        list(our_mu=mu(S))         -1     mu(2x2 S_matrix)
END_ELEMENT

MuPrime   MuPrime    1
     1 Function        list(our_mup=mu_prime(S))  -1     mu_prime(2x2 S_matrix)
END_ELEMENT

Mutual    Mutual     4
     1 K               0.5                        -1     Mutual inductor coupling coefficient; -1.0<= k <=1.0
     2 M               ''                          3     Mutual inductance
     3 Inductor1       ''                         -2     ID of Inductor one name
     4 Inductor2       ''                         -2     ID of Inductor two name
END_ELEMENT

N_StateDemod N_StateDemod  2
     1 Fnom            1GHz                        0     Nominal Input Frequency
     2 StateArray      list(1+j,-1+j,-1-j,1-j)    -1     Complex Array of State Values
END_ELEMENT

N_StateMod N_StateMod  4
     1 MaxStates       4                          -1     Maximum Number of Input States
     2 StateArray      list(1+j,-1+j,-1-j,1-j)    -1     Complex Array of State Values
     3 Fnom            1GHz                        0     Nominal Input Frequency
     4 Rout            50ohm                       1     Output Resistance
END_ELEMENT

NodeSet   NodeSet    2
     1 V               0V                          9     Initial node voltage
     2 R               ''                          1     Connection resistance
END_ELEMENT

NodeSetByName NodeSetByName  1
     1 NodeName        list(prm("NodeSetForm",,0V,)) -1     NodeName/Inital voltage/Connection resistance
END_ELEMENT

NoiseCorr NoiseCorr  3
     1 CorrCoeff       0.5                        -1     Correlation Coefficient
     2 Source1         ''                         -1     Source 1 name
     3 Source2         ''                         -1     Source 2 name
END_ELEMENT

Noisy2Port Noisy2Port  3
     1 NFmin           1dB                        13     Minimum noise figure
     2 Rn              50ohm                       1     Noise resistance
     3 Sopt            0.0                        -1     Optimum match for minimum noise figure
END_ELEMENT

NonlinC   NonlinC    1
     1 Coeff           list(1,1)                  -1     List of coefficients that describe a polynomial
END_ELEMENT

NonlinCCCS NonlinCCCS  1
     1 Coeff           list(1,1)                  -1     List of coefficients that describe a polynomial
END_ELEMENT

NonlinCCVS NonlinCCVS  1
     1 Coeff           list(1,1)                  -1     List of coefficients that describe a polynomial
END_ELEMENT

NonlinL   NonlinL    1
     1 Coeff           list(1,1)                  -1     List of coefficients that describe a polynomial
END_ELEMENT

NonlinVCCS NonlinVCCS  1
     1 Coeff           list(1,1)                  -1     List of coefficients that describe a polynomial
END_ELEMENT

NonlinVCVS NonlinVCVS  1
     1 Coeff           list(1,1)                  -1     List of coefficients that describe a polynomial
END_ELEMENT

NsCircle  NsCircle   1
     1 Function        list(our_nscir=ns_circle(nf1,NFmin,Sopt,Rn,51)) -1     ns_circle(2x2 S_matrix,num_of_pts)
END_ELEMENT

NsPwrInt  NsPwrInt   1
     1 Function        list(our_nsint=ns_pwr_int(S21,nf1,1GHz)) -1     ns_pwr_int(complex_transmission_coeff,noise_figure,res_BW)
END_ELEMENT

NsPwrRefBW NsPwrRefBW  1
     1 Function        list(our_nsbw=ns_pwr_ref_bw(S21,nf1,1GHz)) -1     ns_pwr_ref_bw(complex_transmission_coeff,noise_figure,res_BW)
END_ELEMENT

OpAmp     OpAmp     21
     1 Gain            100.dB                     13     Open loop DC power gain of amplifier in dB
     2 CMR             ''                         13     Common mode rejection ratio in dB
     3 Rout            100.ohm                     1     Output resistance
     4 RDiff           1.Mohm                      1     Differential input resistance
     5 CDiff           0.F                         4     Differential input capacitance
     6 RCom            1.Mohm                      1     common mode input resistance
     7 CCom            0.F                         4     Common mode input capacitance
     8 SlewRate        1.e+6                      -1     Signal slew rate in Volts/sec
     9 IOS             0.A                        10     Input offset current
    10 VOS             0.V                         9     Input offset voltage
    11 BW              1.MHz                       0     Unity gain bandwidth
    12 Pole1           ''                          0     Dominant pole frequency(overides BW)
    13 Pole2           ''                          0     Additional higher order pole frequency
    14 Pole3           ''                          0     Additional higher order pole frequency
    15 Pole4           ''                          0     Additional higher order pole frequency
    16 Pole5           ''                          0     Additional higher order pole frequency
    17 Zero1           ''                          0     Feedforward zero frequency
    18 Inoise          0.                         -1     Input spectral noise current in Amperes/sqrt(Hz)
    19 Vnoise          0.                         -1     Input spectral noise voltage in Volts/sqrt(Hz)
    20 VEE             -15.V                       9     Negative supply voltage
    21 VCC             15.V                        9     Positive supply voltage
END_ELEMENT

OpAmpIdeal OpAmpIdeal  7
     1 Gain            1.                         -1     Magnitude of Open Loop DC Voltage Gain, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
     2 Z1              ''                          1     Input Impedance, Inverting Terminal
     3 Z2              ''                          1     Input Impedance, non-inverting Terminal
     4 Z3              ''                          1     Output Impedance
     5 Z4              ''                          1     Leakage Impedance, Inverting to Non-Inverting Terminal
     6 Freq3db         ''                          0     Frequency at Which Gain Magnitude is Down by 3dB
     7 Delay           0.sec                       6     Time Delay Associated with Gain
END_ELEMENT

Optim     Optim     12
     1 OptimType       random                     -1     Type of minimization method to use: gucker, hp_vmo, sga_sp...
     2 ErrorForm       L2                         -1     Error function formulation: L1, L2, mm, neg_L2...
     3 MaxIters        ''                         -1     Maximum number of iterations/trials for the gradient/random optimizers respectively
     4 P               ''                         -1     Order of optimization norm
     5 DesiredError    ''                         -1     Maximum acceptable error function
     6 StatusLevel     ''                         -1     Degree of annotation
     7 SetBestValues   No                         -1     Keep best values for parent optimization.
     8 Seed            ''                         -1     Seed for random optimizer
     9 SaveSolns       No                         -1     Flag to send analysis solutions to dataset
    10 SaveOptimVars   No                         -1     Send opt var values to dataset
    11 SaveGoals       No                         -1     Send optgoal values to dataset
    12 GoalName        ''                         -1     Name of goal(s) to use in optimization (repeatable)
END_ELEMENT

Options   Options   25
     1 Temp            25C                        12     Temperature
     2 TopologyCheck   yes                        -2     Check circuit topology for degeneracies
     3 ForceS_Params   yes                        -2     Force S-parameter calculations where ever possible
     4 MaxSpectralSize 512                        -1     Maximum spectral array manager allocation size
     5 MaxDeltaV       ''                          9     Maximum voltage step in DC analysis
     6 DC_ConvMode     ''                         -1     Convergence mode for DC analysis
     7 V_RelTol        1e-6                       -1     Relative voltage convergence criterion
     8 V_AbsTol        ''                          9     Absolute voltage convergence criterion
     9 I_RelTol        1e-6                       -1     Relative current convergence criterion
    10 I_AbsTol        ''                         10     Absolute current convergence criterion
    11 FreqRelTol      ''                         -1     Relative frequency convergence criterion
    12 FreqAbsTol      ''                          0     Absolute frequency convergence criterion
    13 GiveAllWarnings yes                        -2     Give all warning messages
    14 MaxWarnings     10                         -1     Maximum number of warning messages
    15 IgnoreShorts    ''                         -2     Silently ignore shorted device
    16 SaveBranchCurrents no                         -2     Send all branch currents to raw-file
    17 OutputInternalNodes no                         -2     Output internal node voltages
    18 PivotRelThresh  ''                         -1     Relative pivot threshold
    19 PivotAbsThresh  ''                         -1     Absolute pivot threshold
    20 Vmin            ''                          9     Minimum voltage present in circuit
    21 Vmax            ''                          9     Maximum voltage present in circuit
    22 MinEpsilon      ''                         -1     Minimum epsilon in finite difference calculations
    23 ForceM_Params   yes                        -2     Use M-parameter (RLCG) calculations wherever possible
    24 TimeStep        ''                          6     Timestep value for steady-state analyses
    25 Other           ''                         -1     Output string to netlist
END_ELEMENT

OscPort   OscPort    6
     1 V               ''                          9     Initial guess at fundamental voltage
     2 Z               1.1ohm                      1     Initial value for Z0
     3 NumOctaves      2                          -1     Number of octaves to search
     4 Steps           10                         -1     Number of steps per search octave
     5 FundIndex       1                          -1     Fundamental number for oscillator
     6 MaxLoopGainStep ''                         -1     Maximum arc length continuation step size during loop-gain search
END_ELEMENT

OscTest   OscTest    5
     1 Port_Number     1                          -1     Number of Port
     2 Z               1.1ohm                      1     Initial value for Z0
     3 Start           1.0GHz                      0     Start frequency
     4 Stop            10.0GHz                     0     Stop frequency
     5 Points          101                        -1     Number of frequency Points
END_ELEMENT

P2D       P2D       61
     1 MaxOrder        4                          -1     Maximum combined order to be considered
     2 Freq            ''                          0     Frequency of fundamental
     3 Order           3                          -1     Maximum order of fundamental to be considered
     4 NestLevel       2                          -1     Levels of subcircuits to output
     5 StatusLevel     2                          -1     Degree of annotation
     6 FundOversample  1                          -1     Oversampling ratio for FFT
     7 Oversample      ''                         -1     Oversampling ratio for FFT 
     8 PackFFT         ''                         -1     Pack FFT in multi-tone analysis
     9 MaxIters        10                         -1     Max number of iterations
    10 GuardThresh     ''                         -1     Guard threshold
    11 SamanskiiConstant 2                          -1     Samanskii constant
    12 Restart         No                         -1     Do not use last solution as initial guess
    13 ArcLevelMaxStep 0.0                        -1     Maximum arc-length step for source-level continuation
    14 MaxStepRatio    100                        -1     Ratio of maximum to given number of steps
    15 MaxShrinkage    1.0e-5                     -1     Maximum step shrinkage
    16 OutputAllSolns  ''                         -1     Output spectra at all computed steps when sweeping
    17 ArcMaxStep      0.0                        -1     Maximum arc-length step
    18 ArcMinValue     ''                         -1     Minimum value for parameter during arclength continuation
    19 ArcMaxValue     ''                         -1     Maximum value for parameter during arclength continuation
    20 UseKrylov       ''                         -1     Use Krylov solver
    21 UseInitialAWHB  ''                         -1     Use initial AWHB stage before Krylov
    22 AWHB_WindowSize ''                         -1     AWHB window size
    23 GMRES_Restart   ''                         -1     GMRES iterations before auto-restart
    24 KrylovUsePacking ''                         -1     Use Krylov spectral packing
    25 KrylovPackingThresh ''                         -1     Krylov bandwidth threshold
    26 KrylovTightTol  ''                         -1     GMRES tolerance
    27 KrylovLooseTol  ''                         -1     Loose tolerance for Krylov loop
    28 KrylovLooseIters ''                         -1     Min number of iterations to invoke loose tolerance
    29 KrylovMaxIters  ''                         -1     Maximum number of GMRES iterations
    30 GMRES_Orthog    ''                         -1     Re-orthogonalize at every GMRES iteration
    31 CalcS_Params    Yes                        -1     Calculate large-signal S-params
    32 P2D_FileName    default.p2d                -1     Name for P2D file
    33 SweepVar        P2D_Freq                   -1     Name of variable or parameter to be swept
    34 UseSweepPlan    ''                         -1     Flag to indicate use of Frequency SweepPlan
    35 LSSP_FreqPlan   ''                         -1     Instance/path name for frequency sweep values for P2D files
    36 Freq_Start      1.0GHz                      0     Start frequency
    37 Freq_Stop       10.0GHz                     0     Stop frequency
    38 Freq_Step       1.0GHz                      0     Step frequency
    39 Freq_Center     ''                          0     Center frequency
    40 Freq_Span       ''                          0     Span
    41 Freq_Lin        ''                         -1     Linear sweep 
    42 Freq_Dec        ''                         -1     Number of points per decade
    43 Freq_Log        ''                         -1     Log sweep
    44 Freq_Reverse    ''                         -1     Reverse sweep
    45 Freq_Pt         ''                          0     Frequency value if its not being swept
    46 Freq_Sort       'LINEAR START STEP'        -1     Sort frequencies
    47 Power_SweepVar  power                      -1     Name of variable or parameter to be swept
    48 Power_UseSweepPlan ''                         -1     Flag to indicate use of power SweepPlan
    49 LSSP_PowerPlan  ''                         -1     Instance/path name for power sweep values for P2D files
    50 Power_Start     -20                        -1     Start value for power in dBm
    51 Power_Stop      0                          -1     Stop value for power in dBm
    52 Power_Step      1                          -1     Step value for power in dBm
    53 Power_Center    ''                         -1     Center value for power in dBm
    54 Power_Span      ''                          8     Span for power
    55 Power_Lin       ''                         -1     Linear sweep for power 
    56 Power_Dec       ''                         -1     Number of points per decade for power
    57 Power_Log       ''                         -1     Log sweep for power
    58 Power_Reverse   ''                         -1     Reverse sweep for power
    59 Power_Pt        ''                          0     Single point for power
    60 Power_Sort      'LINEAR START STEP'        -1     Sort power
    61 Other           ''                         -1     Output string to netlist
END_ELEMENT

PAE       PAE        1
     1 Function        list(our_pae=pae(vout,0,vin,0,vdc,0,I_Probe1.i,I_Probe2.i,I_Probe3.i,{1},{1})) -1     pae(vPlusOut,vMinusOut,vPlusIn,vMinusIn,vPlusDC,vMinusDC,currentOut,currentIn,currentDC,outFreq,inFreq)
END_ELEMENT

PCBEND    PCBEND     6
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W               25.0mils                    5     Conductor width
     3 CLayer          1                          -1     Conductor layer number
     4 Angle           90deg                       7     Angle of bend
     5 M               0.6                        -1     Miter fraction
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

PCCORN    PCCORN     4
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W               10.0mils                    5     Conductor width
     3 CLayer          1                          -1     Conductor layer number
     4 Temp            ''                         12     Physical temperature
END_ELEMENT

PCCROS    PCCROS     7
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              10.0mils                    5     Width at pin 1
     3 W2              10.0mils                    5     Width at pin 2
     4 W3              10.0mils                    5     Width at pin 3
     5 W4              10.0mils                    5     Width at pin 4
     6 CLayer          1                          -1     Conductor layer number
     7 Temp            ''                         12     Physical temperature
END_ELEMENT

PCCURVE   PCCURVE    6
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W               25.0mils                    5     Conductor width
     3 CLayer          1                          -1     Conductor layer number
     4 Angle           -90deg                      7     Angle subtended by the bend
     5 Radius          100.0mils                   5     Radius (measured to center of conductor)
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

PCILC     PCILC      9
     1 Subst           PCSub1                     -1     Substrate instance name
     2 D               10.0mils                    5     Diameter of via hole
     3 CLayer1         1                          -1     Conductor layer number at pin 1
     4 CLayer2         2                          -1     Conductor layer number at pin 2
     5 Temp            ''                         12     Physical temperature
     6 Ang             90deg                       7     (for Layout option) Angle of orientation at pin 2
     7 W1              10.0mils                    5     (for Layout option) Width of square pad or diameter of circular pad on layer CLayer1
     8 W2              10.0mils                    5     (for Layout option) Width of square pad or diameter of circular pad on layer CLayer2
     9 Type            pcilc_square               -1     (for Layout option) Type of Via pad, square or circular
END_ELEMENT

PCLIN1    PCLIN1     6
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W               10.0mils                    5     Width of line
     3 S1              100.0mils                   5     Distance from line to left wall
     4 CLayer1         1                          -1     Conductor layer number
     5 L               25.0mils                    5     Length of line
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

PCLIN10   PCLIN10   33
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              10.0mils                    5     Width of line #1
     3 S1              100.0mils                   5     Distance from line #1 to left wall
     4 CLayer1         1                          -1     Conductor layer number - line #1
     5 W2              10.0mils                    5     Width of line #2
     6 S2              115.0mils                   5     Distance from line #2 to left wall
     7 CLayer2         1                          -1     Conductor layer number - line #2
     8 W3              10.0mils                    5     Width of line #3
     9 S3              130.0mils                   5     Distance from line #3 to left wall
    10 CLayer3         1                          -1     Conductor layer number - line #3
    11 W4              10.0mils                    5     Width of line #4
    12 S4              145.0mils                   5     Distance from line #4 to left wall
    13 CLayer4         1                          -1     Conductor layer number - line #4
    14 W5              10.0mils                    5     Width of line #5
    15 S5              160.0mils                   5     Distance from line #5 to left wall
    16 CLayer5         1                          -1     Conductor layer number - line #5
    17 W6              10.0mils                    5     Width of line #6
    18 S6              175.0mils                   5     Distance from line #6 to left wall
    19 CLayer6         1                          -1     Conductor layer number - line #6
    20 W7              10.0mils                    5     Width of line #7
    21 S7              190.0mils                   5     Distance from line #7 to left wall
    22 CLayer7         1                          -1     Conductor layer number - line #7
    23 W8              10.0mils                    5     Width of line #8
    24 S8              205.0mils                   5     Distance from line #8 to left wall
    25 CLayer8         1                          -1     Conductor layer number - line #8
    26 W9              10.0mils                    5     Width of line #9
    27 S9              220.0mils                   5     Distance from line #9 to left wall
    28 CLayer9         1                          -1     Conductor layer number - line #9
    29 W10             10.0mils                    5     Width of line #10
    30 S10             235.0mils                   5     Distance from line #10 to left wall
    31 CLayer10        1                          -1     Conductor layer number - line #10
    32 L               25.0mils                    5     Length of the lines
    33 Temp            ''                         12     Physical temperature
END_ELEMENT

PCLIN2    PCLIN2     9
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              10.0mils                    5     Width of line #1
     3 S1              100.0mils                   5     Distance from line #1 to left wall
     4 CLayer1         1                          -1     Conductor layer number - line #1
     5 W2              10.0mils                    5     Width of line #2
     6 S2              115.0mils                   5     Distance from line #2 to left wall
     7 CLayer2         1                          -1     Conductor layer number - line #2
     8 L               25.0mils                    5     Length of the lines
     9 Temp            ''                         12     Physical temperature
END_ELEMENT

PCLIN3    PCLIN3    12
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              10.0mils                    5     Width of line #1
     3 S1              100.0mils                   5     Distance from line #1 to left wall
     4 CLayer1         1                          -1     Conductor layer number - line #1
     5 W2              10.0mils                    5     Width of line #2
     6 S2              115.0mils                   5     Distance from line #2 to left wall
     7 CLayer2         1                          -1     Conductor layer number - line #2
     8 W3              10.0mils                    5     Width of line #3
     9 S3              130.0mils                   5     Distance from line #3 to left wall
    10 CLayer3         1                          -1     Conductor layer number - line #3
    11 L               25.0mils                    5     Length of the lines
    12 Temp            ''                         12     Physical temperature
END_ELEMENT

PCLIN4    PCLIN4    15
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              10.0mils                    5     Width of line #1
     3 S1              100.0mils                   5     Distance from line #1 to left wall
     4 CLayer1         1                          -1     Conductor layer number - line #1
     5 W2              10.0mils                    5     Width of line #2
     6 S2              115.0mils                   5     Distance from line #2 to left wall
     7 CLayer2         1                          -1     Conductor layer number - line #2
     8 W3              10.0mils                    5     Width of line #3
     9 S3              130.0mils                   5     Distance from line #3 to left wall
    10 CLayer3         1                          -1     Conductor layer number - line #3
    11 W4              10.0mils                    5     Width of line #4
    12 S4              145.0mils                   5     Distance from line #4 to left wall
    13 CLayer4         1                          -1     Conductor layer number - line #4
    14 L               25.0mils                    5     Length of the lines
    15 Temp            ''                         12     Physical temperature
END_ELEMENT

PCLIN5    PCLIN5    18
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              10.0mils                    5     Width of line #1
     3 S1              100.0mils                   5     Distance from line #1 to left wall
     4 CLayer1         1                          -1     Conductor layer number - line #1
     5 W2              10.0mils                    5     Width of line #2
     6 S2              115.0mils                   5     Distance from line #2 to left wall
     7 CLayer2         1                          -1     Conductor layer number - line #2
     8 W3              10.0mils                    5     Width of line #3
     9 S3              130.0mils                   5     Distance from line #3 to left wall
    10 CLayer3         1                          -1     Conductor layer number - line #3
    11 W4              10.0mils                    5     Width of line #4
    12 S4              145.0mils                   5     Distance from line #4 to left wall
    13 CLayer4         1                          -1     Conductor layer number - line #4
    14 W5              10.0mils                    5     Width of line #5
    15 S5              160.0mils                   5     Distance from line #5 to left wall
    16 CLayer5         1                          -1     Conductor layer number - line #5
    17 L               25.0mils                    5     Length of the lines
    18 Temp            ''                         12     Physical temperature
END_ELEMENT

PCLIN6    PCLIN6    21
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              10.0mils                    5     Width of line #1
     3 S1              100.0mils                   5     Distance from line #1 to left wall
     4 CLayer1         1                          -1     Conductor layer number - line #1
     5 W2              10.0mils                    5     Width of line #2
     6 S2              115.0mils                   5     Distance from line #2 to left wall
     7 CLayer2         1                          -1     Conductor layer number - line #2
     8 W3              10.0mils                    5     Width of line #3
     9 S3              130.0mils                   5     Distance from line #3 to left wall
    10 CLayer3         1                          -1     Conductor layer number - line #3
    11 W4              10.0mils                    5     Width of line #4
    12 S4              145.0mils                   5     Distance from line #4 to left wall
    13 CLayer4         1                          -1     Conductor layer number - line #4
    14 W5              10.0mils                    5     Width of line #5
    15 S5              160.0mils                   5     Distance from line #5 to left wall
    16 CLayer5         1                          -1     Conductor layer number - line #5
    17 W6              10.0mils                    5     Width of line #6
    18 S6              175.0mils                   5     Distance from line #6 to left wall
    19 CLayer6         1                          -1     Conductor layer number - line #6
    20 L               25.0mils                    5     Length of the lines
    21 Temp            ''                         12     Physical temperature
END_ELEMENT

PCLIN7    PCLIN7    24
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              10.0mils                    5     Width of line #1
     3 S1              100.0mils                   5     Distance from line #1 to left wall
     4 CLayer1         1                          -1     Conductor layer number - line #1
     5 W2              10.0mils                    5     Width of line #2
     6 S2              115.0mils                   5     Distance from line #2 to left wall
     7 CLayer2         1                          -1     Conductor layer number - line #2
     8 W3              10.0mils                    5     Width of line #3
     9 S3              130.0mils                   5     Distance from line #3 to left wall
    10 CLayer3         1                          -1     Conductor layer number - line #3
    11 W4              10.0mils                    5     Width of line #4
    12 S4              145.0mils                   5     Distance from line #4 to left wall
    13 CLayer4         1                          -1     Conductor layer number - line #4
    14 W5              10.0mils                    5     Width of line #5
    15 S5              160.0mils                   5     Distance from line #5 to left wall
    16 CLayer5         1                          -1     Conductor layer number - line #5
    17 W6              10.0mils                    5     Width of line #6
    18 S6              175.0mils                   5     Distance from line #6 to left wall
    19 CLayer6         1                          -1     Conductor layer number - line #6
    20 W7              10.0mils                    5     Width of line #7
    21 S7              190.0mils                   5     Distance from line #7 to left wall
    22 CLayer7         1                          -1     Conductor layer number - line #7
    23 L               25.0mils                    5     Length of the lines
    24 Temp            ''                         12     Physical temperature
END_ELEMENT

PCLIN8    PCLIN8    27
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              10.0mils                    5     Width of line #1
     3 S1              100.0mils                   5     Distance from line #1 to left wall
     4 CLayer1         1                          -1     Conductor layer number - line #1
     5 W2              10.0mils                    5     Width of line #2
     6 S2              115.0mils                   5     Distance from line #2 to left wall
     7 CLayer2         1                          -1     Conductor layer number - line #2
     8 W3              10.0mils                    5     Width of line #3
     9 S3              130.0mils                   5     Distance from line #3 to left wall
    10 CLayer3         1                          -1     Conductor layer number - line #3
    11 W4              10.0mils                    5     Width of line #4
    12 S4              145.0mils                   5     Distance from line #4 to left wall
    13 CLayer4         1                          -1     Conductor layer number - line #4
    14 W5              10.0mils                    5     Width of line #5
    15 S5              160.0mils                   5     Distance from line #5 to left wall
    16 CLayer5         1                          -1     Conductor layer number - line #5
    17 W6              10.0mils                    5     Width of line #6
    18 S6              175.0mils                   5     Distance from line #6 to left wall
    19 CLayer6         1                          -1     Conductor layer number - line #6
    20 W7              10.0mils                    5     Width of line #7
    21 S7              190.0mils                   5     Distance from line #7 to left wall
    22 CLayer7         1                          -1     Conductor layer number - line #7
    23 W8              10.0mils                    5     Width of line #8
    24 S8              205.0mils                   5     Distance from line #8 to left wall
    25 CLayer8         1                          -1     Conductor layer number - line #8
    26 L               25.0mils                    5     Length of the lines
    27 Temp            ''                         12     Physical temperature
END_ELEMENT

PCLIN9    PCLIN9    30
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              10.0mils                    5     Width of line #1
     3 S1              100.0mils                   5     Distance from line #1 to left wall
     4 CLayer1         1                          -1     Conductor layer number - line #1
     5 W2              10.0mils                    5     Width of line #2
     6 S2              115.0mils                   5     Distance from line #2 to left wall
     7 CLayer2         1                          -1     Conductor layer number - line #2
     8 W3              10.0mils                    5     Width of line #3
     9 S3              130.0mils                   5     Distance from line #3 to left wall
    10 CLayer3         1                          -1     Conductor layer number - line #3
    11 W4              10.0mils                    5     Width of line #4
    12 S4              145.0mils                   5     Distance from line #4 to left wall
    13 CLayer4         1                          -1     Conductor layer number - line #4
    14 W5              10.0mils                    5     Width of line #5
    15 S5              160.0mils                   5     Distance from line #5 to left wall
    16 CLayer5         1                          -1     Conductor layer number - line #5
    17 W6              10.0mils                    5     Width of line #6
    18 S6              175.0mils                   5     Distance from line #6 to left wall
    19 CLayer6         1                          -1     Conductor layer number - line #6
    20 W7              10.0mils                    5     Width of line #7
    21 S7              190.0mils                   5     Distance from line #7 to left wall
    22 CLayer7         1                          -1     Conductor layer number - line #7
    23 W8              10.0mils                    5     Width of line #8
    24 S8              205.0mils                   5     Distance from line #8 to left wall
    25 CLayer8         1                          -1     Conductor layer number - line #8
    26 W9              10.0mils                    5     Width of line #9
    27 S9              220.0mils                   5     Distance from line #9 to left wall
    28 CLayer9         1                          -1     Conductor layer number - line #9
    29 L               25.0mils                    5     Length of the lines
    30 Temp            ''                         12     Physical temperature
END_ELEMENT

PCSTEP    PCSTEP     5
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              25.0mils                    5     Conductor width at pin 1
     3 W2              15.0mils                    5     Conductor width at pin 2
     4 CLayer          1                          -1     Conductor layer number
     5 Temp            ''                         12     Physical temperature
END_ELEMENT

PCSUB1    PCSUB1     8
     1 H[1]            25.0mils                    5     Thickness of dielectric layer #1
     2 Er              10.0                       -1     Dielectric constant
     3 Cond            1.0E+306                   -1     Conductor conductivity
     4 Hu              100.0mils                   5     Upper ground plane spacing
     5 Hl              100.0mils                   5     Lower ground plane spacing
     6 T               1.0mils                     5     Metal thickness
     7 W               500.0mils                   5     Distance between sidewalls
     8 Sigma           0                          -1     Dielectric conductivity
END_ELEMENT

PCSUB2    PCSUB2     9
     1 H[1]            25.0mils                    5     Thickness of dielectric layer #1
     2 H[2]            25.0mils                    5     Thickness of dielectric layer #2
     3 Er              10.0                       -1     Dielectric constant
     4 Cond            1.0E+306                   -1     Conductor conductivity
     5 Hu              100.0mils                   5     Upper ground plane spacing
     6 Hl              100.0mils                   5     Lower ground plane spacing
     7 T               1.0mils                     5     Metal thickness
     8 W               500.0mils                   5     Distance between sidewalls
     9 Sigma           0                          -1     Dielectric conductivity
END_ELEMENT

PCSUB3    PCSUB3    10
     1 H[1]            25.0mils                    5     Thickness of dielectric layer #1
     2 H[2]            25.0mils                    5     Thickness of dielectric layer #2
     3 H[3]            25.0mils                    5     Thickness of dielectric layer #3
     4 Er              10.0                       -1     Dielectric constant
     5 Cond            1.0E+306                   -1     Conductor conductivity
     6 Hu              100.0mils                   5     Upper ground plane spacing
     7 Hl              100.0mils                   5     Lower ground plane spacing
     8 T               1.0mils                     5     Metal thickness
     9 W               500.0mils                   5     Distance between sidewalls
    10 Sigma           0                          -1     Dielectric conductivity
END_ELEMENT

PCSUB4    PCSUB4    11
     1 H[1]            25.0mils                    5     Thickness of dielectric layer #1
     2 H[2]            25.0mils                    5     Thickness of dielectric layer #2
     3 H[3]            25.0mils                    5     Thickness of dielectric layer #3
     4 H[4]            25.0mils                    5     Thickness of dielectric layer #4
     5 Er              10.0                       -1     Dielectric constant
     6 Cond            1.0E+306                   -1     Conductor conductivity
     7 Hu              100.0mils                   5     Upper ground plane spacing
     8 Hl              100.0mils                   5     Lower ground plane spacing
     9 T               1.0mils                     5     Metal thickness
    10 W               500.0mils                   5     Distance between sidewalls
    11 Sigma           0                          -1     Dielectric conductivity
END_ELEMENT

PCSUB5    PCSUB5    12
     1 H[1]            25.0mils                    5     Thickness of dielectric layer #1
     2 H[2]            25.0mils                    5     Thickness of dielectric layer #2
     3 H[3]            25.0mils                    5     Thickness of dielectric layer #3
     4 H[4]            25.0mils                    5     Thickness of dielectric layer #4
     5 H[5]            25.0mils                    5     Thickness of dielectric layer #5
     6 Er              10.0                       -1     Dielectric constant
     7 Cond            1.0E+306                   -1     Conductor conductivity
     8 Hu              100.0mils                   5     Upper ground plane spacing
     9 Hl              100.0mils                   5     Lower ground plane spacing
    10 T               1.0mils                     5     Metal thickness
    11 W               500.0mils                   5     Distance between sidewalls
    12 Sigma           0                          -1     Dielectric conductivity
END_ELEMENT

PCSUB6    PCSUB6    13
     1 H[1]            25.0mils                    5     Thickness of dielectric layer #1
     2 H[2]            25.0mils                    5     Thickness of dielectric layer #2
     3 H[3]            25.0mils                    5     Thickness of dielectric layer #3
     4 H[4]            25.0mils                    5     Thickness of dielectric layer #4
     5 H[5]            25.0mils                    5     Thickness of dielectric layer #5
     6 H[6]            25.0mils                    5     Thickness of dielectric layer #6
     7 Er              10.0                       -1     Dielectric constant
     8 Cond            1.0E+306                   -1     Conductor conductivity
     9 Hu              100.0mils                   5     Upper ground plane spacing
    10 Hl              100.0mils                   5     Lower ground plane spacing
    11 T               1.0mils                     5     Metal thickness
    12 W               500.0mils                   5     Distance between sidewalls
    13 Sigma           0                          -1     Dielectric conductivity
END_ELEMENT

PCSUB7    PCSUB7    14
     1 H[1]            25.0mils                    5     Thickness of dielectric layer #1
     2 H[2]            25.0mils                    5     Thickness of dielectric layer #2
     3 H[3]            25.0mils                    5     Thickness of dielectric layer #3
     4 H[4]            25.0mils                    5     Thickness of dielectric layer #4
     5 H[5]            25.0mils                    5     Thickness of dielectric layer #5
     6 H[6]            25.0mils                    5     Thickness of dielectric layer #6
     7 H[7]            25.0mils                    5     Thickness of dielectric layer #7
     8 Er              10.0                       -1     Dielectric constant
     9 Cond            1.0E+306                   -1     Conductor conductivity
    10 Hu              100.0mils                   5     Upper ground plane spacing
    11 Hl              100.0mils                   5     Lower ground plane spacing
    12 T               1.0mils                     5     Metal thickness
    13 W               500.0mils                   5     Distance between sidewalls
    14 Sigma           0                          -1     Dielectric conductivity
END_ELEMENT

PCTAPER   PCTAPER    6
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              25.0mils                    5     Conductor width at pin 1
     3 W2              15.0mils                    5     Conductor width at pin 2
     4 L               100.0mils                   5     Length of the line
     5 CLayer          1                          -1     Conductor layer number
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

PCTEE     PCTEE      6
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W1              10.0mils                    5     Width at pin 1
     3 W2              10.0mils                    5     Width at pin 2
     4 W3              10.0mils                    5     Width at pin 3
     5 CLayer          1                          -1     Conductor layer number
     6 Temp            ''                         12     Physical temperature
END_ELEMENT

PCTRACE   PCTRACE    5
     1 Subst           PCSub1                     -1     Substrate instance name
     2 W               10.0mils                    5     Width of the line
     3 CLayer          1                          -1     Conductor layer number
     4 L               25.0mils                    5     Length of the line
     5 Temp            ''                         12     Physical temperature
END_ELEMENT

PI4DQPSK_ModTuned PI4DQPSK_ModTuned  4
     1 Fnom            1GHz                        0     Nominal Input Frequency
     2 Rout            50ohm                       1     Output Resistance
     3 SymbolRate      24.3KHz                     0     Output Symbol Rate (1/2 Input Bit Rate)
     4 Delay           50nsec                      6     Sampling Delay
END_ELEMENT

PIN       PIN        6
     1 Cj              0.1nF                       4     Junction Capacitance
     2 Rj              0.01ohm                     1     Junction resistance
     3 Rs              0.01ohm                     1     Diode series resistance
     4 Ls              1.0nH                       3     Bond wire inductance
     5 Cb              0.1nF                       4     By-pass Capacitance
     6 Cg              0.1nF                       4     Capacitance of gap which diode is connected
END_ELEMENT

PIN2      PIN2       5
     1 Cj              0.1nF                       4     Junction Capacitance
     2 Rj              0.01ohm                     1     Junction resistance
     3 Rs              0.01ohm                     1     Diode series resistance
     4 Ls              1.0nH                       3     Diode series inductance
     5 Cp              0.1nF                       4     Package Capacitance
END_ELEMENT

PLC       PLC        2
     1 L               1.0nH                       3     Inductance
     2 C               1.0pF                       4     Capacitance
END_ELEMENT

PLCQ      PLCQ       9
     1 L               120.0nH                     3     Inductance
     2 Ql              50.0                       -1     Quality factor of L
     3 Fl              100.0MHz                    0     Frequency at which ql is given
     4 ModL            loss_freq                  -1     Loss Mode for inductor of ql
     5 C               21.0pF                      4     Capacitance
     6 Qc              100.0                      -1     Quality factor of C
     7 Fc              100.0MHz                    0     Frequency at which qc is given
     8 ModC            loss_freq                  -1     Loss Mode for capacitor of qc
     9 Rdc             0.0ohm                      1     Resistance for modes 2 and 3
END_ELEMENT

PM_DemodTuned PM_DemodTuned  3
     1 Sensitivity     10deg                       7     Demodulation Sensitivity, in Degree/Volt
     2 Fnom            1GHz                        0     Nominal Input Frequency
     3 Rout            50ohm                       1     Output Resistance
END_ELEMENT

PM_ModTuned PM_ModTuned  3
     1 Sensitivity     10deg                       7     Modulation Sensitivity, Degree/Volt
     2 Fnom            1GHz                        0     Nominal Input Frequency
     3 Rout            50ohm                       1     Output Resistance
END_ELEMENT

PM_UnwrapDemodTuned PM_UnwrapDemodTuned  3
     1 Sensitivity     10deg                       7     Demodulation Sensitivity, in Degree/Volt
     2 Fnom            1GHz                        0     Nominal Input Frequency
     3 MaxAngle        360deg                      7     Unwrapped Phase Angle Range (+/- MaxAngle)
END_ELEMENT

PRC       PRC        2
     1 R               1.0Mohm                     1     Parallel resistance
     2 C               1.0pF                       4     Capacitance
END_ELEMENT

PRL       PRL        2
     1 R               1.0Mohm                     1     Parallel resistance
     2 L               1.0nH                       3     Inductance
END_ELEMENT

PRLC      PRLC       3
     1 R               1.0Mohm                     1     Parallel resistance
     2 L               1.0nH                       3     Inductance
     3 C               1.0pF                       4     Capacitance
END_ELEMENT

P_1Tone   P_1Tone   11
     1 Num             1                          -1     Port number
     2 Z               50ohm                       1     Source impedance, use 1+j*0 for complex
     3 P               (dbmtow(0))                 8     Power at center frequency, use polar() for phase
     4 Freq            1GHz                        0     Center frequency
     5 P_USB           ''                          8     Power of upper sideband small signal tone, use polar() for phase
     6 P_LSB           ''                          8     Power of lower sideband small-signal tone, use polar() for phase
     7 Mod             ''                         -1     Modulation function
     8 Noise           y_n1                       -1     Enable/disable port thermal noise
     9 Pac             (dbmtow(0))                 8     AC power, use polar() for phase
    10 FundIndex       ''                         -1     Fundamental Frequency Index (Can Be Used Instead of Specifying Freq")
    11 Vdc             ''                          9     Open circuit DC voltage
END_ELEMENT

P_AC      P_AC       6
     1 Num             1                          -1     Port number
     2 Z               50ohm                       1     Reference impedance, use 1+j*0 for complex
     3 Pac             (dbmtow(0))                 8     AC power, use polar() for phase
     4 Freq            freq                        0     Frequency
     5 Noise           y_n1                       -1     Enable/disable port thermal noise
     6 Vdc             ''                          9     Open circuit DC voltage
END_ELEMENT

P_SpectrumDataset P_SpectrumDataset  5
     1 Num             1                          -1     Port number
     2 Z               50ohm                       1     Source impedance, use 1+j*0 for complex
     3 Freq            1GHz                        0     Fundamental frequency
     4 Dataset         ''                         -1     Dataset name
     5 Expression      ''                         -1     Dataset variable or expression
END_ELEMENT

P_nHarm   P_nHarm    8
     1 Num             1                          -1     Port number
     2 Z               50ohm                       1     Source impedance, use 1+j*0 for complex
     3 Freq            1GHz                        0     Fundamental frequency
     4 P               0W                           8     N-th harmonic power level (use Add   for more harmonics), , use polar() for phase
     5 Noise           y_n1                       -1     Enable/disable port thermal noise
     6 Pac             (dbmtow(0))                 8     AC power, use polar() for phase
     7 FundIndex       ''                         -1     Fundamental Frequency Index (Can Be Used Instead of Specifying Freq")
     8 Vdc             ''                          9     Open circuit DC voltage
END_ELEMENT

P_nTone   P_nTone    7
     1 Num             1                          -1     Port number
     2 Z               50ohm                       1     Source impedance, use 1+j*0 for complex
     3 Freq            1GHz                        0     N-th frequency tone (use Add   for more tones)
     4 P               (dbmtow(0))                 8     Corresponding N-th tone power level, (use Add   for more power levels), use polar() for phase
     5 Noise           y_n1                       -1     Enable/disable port thermal noise
     6 Pac             (dbmtow(0))                 8     AC power, use polar() for phase
     7 Vdc             ''                          9     Open circuit DC voltage
END_ELEMENT

Pad       Pad        4
     1 NetType         Pi                         -1     Pi or Tee Network
     2 Loss            0.dB                       13     attenuation in dB
     3 R1              50.ohm                      1     reference resistance for port1
     4 R2              50.ohm                      1     reference resistance for port2
END_ELEMENT

ParallelSerial ParallelSerial  5
     1 OutputRate      50KHz                       0     Serial Output Data Clock Rate
     2 LSB_First       y_n1                       -1     Serial Data Is Output with Least Significant Bit First
     3 Delay           0.0nsec                     6     Initial Synchronization Delay
     4 InputBits       4                          -1     Number of Bits in Input Word
     5 IntegerIn       y_n1                       -1     Yes if input data is scaled as integers instead of from -1 to 1
END_ELEMENT

ParamSweep ParamSweep 17
     1 UseSweepPlan    ''                         -1     Flag to indicate use of SweepPlan
     2 SweepPlan       ''                         -1     SWEEP plan instance/path name to append to sweep
     3 SweepVar        ''                         -1     Name of variable or parameter to be swept
     4 SimInstanceName list(,,,,,)                -1     Analysis instance/path name to control (repeatable)
     5 StatusLevel     2                          -1     Degree of annotation
     6 RestoreNomValues ''                         -1     Restores nominal values if controlling optimization
     7 Start           1                          -1     Start value
     8 Stop            10                         -1     Stop value
     9 Step            1                          -1     Step value
    10 Center          ''                         -1     Center value 
    11 Span            ''                         -1     Span
    12 Lin             ''                         -1     Linear sweep 
    13 Dec             ''                         -1     Number of points per decade
    14 Log             ''                         -1     Log sweep
    15 Reverse         ''                         -1     Reverse sweep
    16 Pt              ''                          0     Frequency value if its not being swept
    17 Sort            'LINEAR START STEP'        -1     Single point
END_ELEMENT

Pfc       Pfc        1
     1 Function        list(our_pfc=pfc(vout,0,I_Probe1.i,{1,0})) -1     pfc(positive_voltage,negative_voltage,current_probe,desired_harm_freq)
END_ELEMENT

PfcTran   PfcTran    1
     1 Function        'list(our_pfct=pfc_tran(vout, 0,I_Probe1.i,1GHz,1))' -1     pfc_tran(positive_voltage,negative_voltage,current_probe,fund_freq,num_of_harm)
END_ELEMENT

PhaseComp PhaseComp  1
     1 Function        list(our_pcomp=phase_comp(S21[::,0])) -1     phase_comp(complex_transmission_coeff)
END_ELEMENT

PhaseFreqDet PhaseFreqDet  2
     1 Vhigh           5V                          9     High-state Output Voltage
     2 Vlow            0V                          9     Low-state Output Voltage
END_ELEMENT

PhaseFreqDetTuned PhaseFreqDetTuned  4
     1 Sensitivity     0.1                        -1     Detector Sensitivity, (mA/degree)
     2 MaxAngle        360deg                      7     Maximum Unwrapped Phase Angle (+/- MaxAngle)
     3 Vlimit          20V                         9     Maximum Output Voltage Compliance (+/- Vlimit)
     4 Fnom            100KHz                      0     Nominal input frequency for VCO and REF inputs
END_ELEMENT

PhaseNoiseMod PhaseNoiseMod  5
     1 Fnom            1GHz                        0     Nominal Input Frequency
     2 Rout            50ohm                       1     Output Resistance)
     3 Fcorner         1MHz                        0     Corner Frequency for 1/f Noise Performance
     4 NF              3dB                        13     Broad Band Noise Figure
     5 QL              500                        -1     Loaded Q of Resonator
END_ELEMENT

PhaseShiftSML PhaseShiftSML  5
     1 Phase           90.deg                      7     phase shift
     2 PhaseSlope      0.                         -1     per frequency octave
     3 FreqStart       ''                          0     frequency where slope begins
     4 RTConj          y_n0                       -1     reverse transmission conjugate, Yes to apply
     5 ZRef            50.ohm                      1     reference impedance for all ports
END_ELEMENT

PinDiode  PinDiode   5
     1 Model           NLPINM1                    -1     Model instance name
     2 Area            ''                         -1     Junction Area
     3 Region          ''                         -1     DC operating region, 0=off, 1=on
     4 Temp            ''                         12     Device operating temperature
     5 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

PinDiodeModel PinDiodeModel 18
     1 Is              ''                         10     Saturation Current, A
     2 Vi              ''                          9     I-Region Forward Bias Voltage Drop, V
     3 Un              ''                         -1     Electron Mobility, cm^2/(V*s)
     4 Wi              ''                         -1     I-Region Width, m
     5 Rr              ''                          1     I-Region Reverse Bias Resistance, Ohm
     6 Cmin            ''                          4     P-I-N Punchthrough Capacitance, F
     7 Tau             ''                          6     Ambipolar Lifetime within I-Region, s
     8 Rs              ''                          1     Ohmic Resistance, Ohm
     9 Cjo             ''                          4     Zero-Bias Junction Capacitance, F
    10 Vj              ''                          9     Junction Potential, V
    11 M               ''                         -1     Grading coefficient
    12 Fc              ''                         -1     Forward-bias Depletion Cap. Coefficient
    13 Imax            ''                         -1     Explosion current, A/m^2
    14 Kf              ''                         -1     Flicker Noise Coefficient
    15 Af              ''                         -1     Flicker Noise Exponent
    16 Ffe             ''                         -1     Flicker noise frequency exponent
    17 wBv             ''                          9     Diode Reverse Breakdown Voltage (warning), V
    18 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

Pspec     Pspec      1
     1 Function        list(our_pspec=pspec(vout,0,I_Probe1.i)) -1     pspec(positive_voltage,negative_voltage,current_probe)
END_ELEMENT

PspecTran PspecTran  1
     1 Function        'list(our_pspect=psepc_tran(vout, 0,I_Probe1.i,1GHz,8))' -1     pspec_tran(positive_voltage,negative_voltage,current_probe,fund_freq,num_of_harm)
END_ELEMENT

Pt        Pt         1
     1 Function        list(our_pt=pt(vout,0,I_Probe1.i)) -1     pt(positive_voltage,negative_voltage,current_probe)
END_ELEMENT

PtRF_CDMA PtRF_CDMA  5
     1 F0              894MHz                      0     Carrier Frequency
     2 Power           (dbmtow(0))                 8     Output Power at RF Output
     3 Z               50ohm                       1     Output Impedance of RF Output, use 1+j*0 for complex
     4 LinMod          1.0                        -1     Additional Linear Modulation
     5 Toffset         0sec                        6     Time Offset into Data Array
END_ELEMENT

PtRF_GSM  PtRF_GSM   5
     1 F0              1GHz                        0     Carrier Frequency
     2 Power           (dbmtow(0))                 8     Output Power at RF Output
     3 Rout            50ohm                       1     Output Resistance of RF Output
     4 DataRate        270.833KHz                  0     Digital Modulation Data Rate
     5 InitBits        001101010010               -1     Initial State of PRBS Data Generator
END_ELEMENT

PtRF_NADC PtRF_NADC  5
     1 F0              870.03MHz                   0     Carrier Frequency
     2 Power           (dbmtow(0))                 8     RF Output Power
     3 Z               50ohm                       1     Output Impedance of RF Output, use 1+j*0 for complex
     4 LinMod          1.0                        -1     Additional Linear Modulation
     5 Toffset         0sec                        6     Time Offset into Data Array
END_ELEMENT

PtRF_PHS  PtRF_PHS   5
     1 F0              1895MHz                     0     Carrier Frequency
     2 Power           (dbmtow(0))                 8     Output Power at RF Output
     3 Z               50ohm                       1     Output Impedance of RF Output, use 1+j*0 for complex
     4 LinMod          1.0                        -1     Additional Linear Modulation
     5 Toffset         0sec                        6     Time Offset into Data Array
END_ELEMENT

PtRF_Pulse PtRF_Pulse 15
     1 Num             1                          -1     Port number
     2 Z               50ohm                       1     Source impedance, use 1+j*0 for complex
     3 P               (dbmtow(0))                 8     Carrier power during pulse
     4 Freq            1GHz                        0     RF carrier frequency
     5 OffRatio        0                          -1     Linear amplitude ratio of OFF to ON portions of pulse
     6 Delay           0nsec                       6     Time delay before first pulse
     7 Rise            1nsec                       6     Rise time of pulse
     8 Fall            1nsec                       6     Fall time of pulse
     9 Width           3nsec                       6     Width of constant portion of pulse
    10 Period          100nsec                     6     Pulse repetition period
    11 Chirp           0Hz                         0     Linear frequency modulation during pulse
    12 Phase0          0deg                        7     Initial phase of pulse carrier
    13 Noise           y_n1                       -1     Enable/disable port thermal noise
    14 Pac             (dbmtow(0))                 8     AC power, use 1+j*0 for complex
    15 Vdc             ''                          9     Open circuit DC voltage
END_ELEMENT

PtRF_Step PtRF_Step  9
     1 Num             1                          -1     Port number
     2 Z               50ohm                       1     Source impedance, use 1+j*0 for complex
     3 P               (dbmtow(0))                 8     Steady state power
     4 Freq            1GHz                        0     RF Frequency
     5 Delay           0nsec                       6     Time delay before step
     6 Rise            0nsec                       6     Rise time of step
     7 Noise           y_n1                       -1     Enable/disable port thermal noise
     8 Pac             (dbmtow(0))                 8     AC power, use polar() for phase
     9 Vdc             ''                          9     Open circuit DC voltage
END_ELEMENT

PwrGain   PwrGain    1
     1 Function        list(our_pgain=pwr_gain(S21)) -1     pwr_gain(complex_transmission_coeff)
END_ELEMENT

PwrSplit2 PwrSplit2  8
     1 S21             1.                         -1     Transmission Coefficient, Port1 to Port2, Complex Number: 1+j*0, polar(), dbpolar()
     2 S31             1.                         -1     Transmission Coefficient, Port1 to Port3, Complex Number: 1+j*0, polar(), dbpolar()
     3 S11             0.                         -1     Port1 Reflection Coefficient, Complex Number: 1+j*0, polar(), dbpolar()
     4 S22             0.                         -1     Port2 Reflection Coefficient, Complex Number: 1+j*0, polar(), dbpolar()
     5 Isolation       100.dB                     13     Isolation Between Port2 and Port3 in dB
     6 ZRef            50.ohm                      1     Reference Impedance for All Ports
     7 Temp            ''                         12     Temperature in Degrees Celsius
     8 Delay           ''                          6     Time Delay
END_ELEMENT

PwrSplit3 PwrSplit3  6
     1 S21             1.                         -1     Transmission Coefficient, Port1 to Port2, Complex Number: 1+j*0, polar(), dbpolar()
     2 S31             1.                         -1     Transmission Coefficient, Port1 to Port3, Complex Number: 1+j*0, polar(), dbpolar()
     3 S41             1.                         -1     Transmission Coefficient, Port1 to Port4, Complex Number: 1+j*0, polar(), dbpolar()
     4 ZRef            50.ohm                      1     Reference Impedance for All Ports
     5 Temp            ''                         12     Temperature in Degrees Celsius
     6 Delay           ''                          6     Time Delay
END_ELEMENT

QPSK_ModTuned QPSK_ModTuned  6
     1 Fnom            1GHz                        0     Nominal Input Frequency
     2 Rout            50ohm                       1     Output Resistance
     3 State1          exp(-j*3*pi/4)             -2     Complex Modulation Coordinates of State 1
     4 State2          exp(-j*5*pi/4)             -2     Complex Modulation Coordinates of State 2
     5 State3          exp(-j*pi)                 -2     Complex Modulation Coordinates of State 3
     6 State4          exp(-j*7*pi/4)             -2     Complex Modulation Coordinates of State 4
END_ELEMENT

QuantizerSML QuantizerSML  4
     1 Vmin            -1.0V                       9     Minimum Baseband Input Voltage
     2 Vmax            1.0V                        9     Maximum Baseband Input Voltage
     3 N               32                         -1     Number of Quantized Output Levels
     4 OutState        1                          -1     =1 for outputing integers representing quantization levels, =0 for outputing quantized input
END_ELEMENT

R         R          8
     1 R               50ohm                       1     Resistance
     2 Temp            ''                         12     Temperature
     3 Tnom            ''                         12     Nominal temperature
     4 TC1             ''                         12     Temperature coefficient; per degree Celsius
     5 TC2             ''                         12     Temperature coefficient; per degree Celsius squared
     6 Noise           Yes                        -1     Resistor thermal noise option: YES=enable; NO=disable
     7 wPmax           ''                          8     Maximum power dissipation (warning)
     8 wImax           ''                         10     Maximum current (warning)
END_ELEMENT

RCLIN     RCLIN      4
     1 R               50.0ohm                     1     Series Resistance per meter
     2 C               0.01pF                      4     Shunt Capacitance per meter
     3 L               1000.0mils                  5     Length
     4 Temp            ''                         12     Physical temperature
END_ELEMENT

RIBBON    RIBBON     9
     1 W               25.0mils                    5     Conductor width
     2 L               100.0mils                   5     Conductor length
     3 Rho             1.0                        -1     Metal resistivity (relative to gold)
     4 Temp            ''                         12     Physical temperature
     5 AF              0.5                        -1     (for Layout option) Arc factor;ratio of distance between two pins to wire length
     6 CO              5.0mils                     5     (for Layout option) Conductor offset; distance from edge of conductor
     7 A1              30.0deg                     7     (for Layout option) Angle of departure from first pin
     8 A2              30.0deg                     7     (for Layout option) Angle between direction of first and second pins
     9 BondLayer       smt_bond                   -1     (for Layout option) Layer on which the ribbon is drawn
END_ELEMENT

RIND      RIND       9
     1 N               3.0                        -1     Number of turns
     2 L1              30.0mils                    5     Length of Second Outermost Segment
     3 L2              20.0mils                    5     Length of Outermost Segment
     4 W               1.0mils                     5     Conductor Width
     5 S               1.0mils                     5     Conductor Spacing
     6 T               0.2mils                     5     Conductor Thickness
     7 Rho             1.0                        -1     Conductor Resistivity (Relative to copper)
     8 FR              10.0MHz                     0     Resonant frequency
     9 Temp            ''                         12     Physical temperature
END_ELEMENT

RWG       RWG       10
     1 A               900.0mils                   5     Inside Width of Enclosure
     2 B               400.0mils                   5     Inside Height of Enclosure
     3 L               10000.0mils                 5     Waveguide Length
     4 Er              1.0                        -1     Relative dielectric constant
     5 Rho             1.0                        -1     Metal Resistivity (Relative to Copper)
     6 TanD            0                          -1     Dielectric loss tangent
     7 Mur             1                          -1     Relative permeability
     8 TanM            0                          -1     Permeability
     9 Sigma           0                          -1     Dielectric conductivity
    10 Temp            ''                         12     Physical temperature
END_ELEMENT

RWGINDF   RWGINDF   10
     1 A               900.0mils                   5     Inside Width of Enclosure
     2 B               400.0mils                   5     Inside Height of Enclosure
     3 L               10000.0mils                 5     Length of the Fin
     4 Er              1.0                        -1     Relative dielectric constant
     5 Rho             1.0                        -1     Metal Resistivity (Relative to Copper)
     6 TanD            0                          -1     Dielectric loss tangent
     7 Mur             1                          -1     Relative permeability
     8 TanM            0                          -1     Permeability
     9 Sigma           0                          -1     Dielectric conductivity
    10 Temp            ''                         12     Physical temperature
END_ELEMENT

RWGT      RWGT       9
     1 A               900.0mils                   5     Inside Width of Enclosure
     2 B               400.0mils                   5     Inside Height of Enclosure
     3 Er              1.0                        -1     Relative dielectric constant
     4 Rho             1.0                        -1     Metal Resistivity (Relative to Copper)
     5 TanD            0                          -1     Dielectric loss tangent
     6 Mur             1                          -1     Relative permeability
     7 TanM            0                          -1     Permeability
     8 Sigma           0                          -1     Dielectric conductivity
     9 Temp            ''                         12     Physical temperature
END_ELEMENT

R_Conn    R_Conn     1
     1 R               50ohm                       1     Resistance
END_ELEMENT

R_Model   R_Model   11
     1 R               50ohm                       1     Resistance
     2 Rsh             ''                          1     Sheet Resistance
     3 Length          ''                          5     Length
     4 Width           ''                          5     Width
     5 Narrow          ''                          5     Length and width narrowing due to etching
     6 Tnom            ''                         12     Nominal temperature
     7 TC1             ''                         12     Temperature coefficient; per degree Celsius
     8 TC2             ''                         12     Temperature coefficient; per degree Celsius squared
     9 wPmax           ''                          8     Maximum power dissipation (warning)
    10 wImax           ''                         10     Maximum current (warning)
    11 AllParams       ''                         -1     Data Access Component (DAC) Based Parameters
END_ELEMENT

R_Pad1    R_Pad1     4
     1 R               50ohm                       1     Resistance
     2 W               25.0mils                    5     W
     3 S               10.0mils                    5     S
     4 L1              50.0mils                    5     L
END_ELEMENT

R_Space   R_Space    2
     1 R               50ohm                       1     Resistance
     2 L1              50.0mils                    5     L
END_ELEMENT

ResetSwitch ResetSwitch  0
END_ELEMENT

S1P       S1P        5
     1 File            ''                         -1     File Name
     2 Type            Type1                      -1     File Type
     3 InterpMode      Mode0                      -1     Interpolation Mode
     4 InterpDom       ID0                        -1     Interpolation Domain
     5 Temp            ''                         12     Temperature
END_ELEMENT

S1P_Eqn   S1P_Eqn   14
     1 S[1,1]          ''                         -1     S-parameter
     2 Z[1]            ''                          1     Port 1 impedance
     3 NFmin           ''                         13     Minimum noise figure in dB
     4 Rn              ''                          1     Noise resistance
     5 Sopt            ''                         -1     Optimum noise match S-Parameter
     6 Temp            ''                         12     Device noise temperature
     7 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
     8 ImpMode         ''                         -1     Convolution mode
     9 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    10 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    11 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    12 ImpWindow       ''                         -1     Smoothing window
    13 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    14 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

S2P       S2P        5
     1 File            ''                         -1     File Name
     2 Type            Type1                      -1     File Type
     3 InterpMode      Mode0                      -1     Interpolation Mode
     4 InterpDom       ID0                        -1     Interpolation Domain
     5 Temp            ''                         12     Temperature
END_ELEMENT

S2P_Eqn   S2P_Eqn   19
     1 S[1,1]          ''                         -1     S-parameter
     2 S[1,2]          ''                         -1     S-parameter
     3 S[2,1]          ''                         -1     S-parameter
     4 S[2,2]          ''                         -1     S-parameter
     5 Z[1]            ''                          1     Port 1 impedance
     6 Z[2]            ''                          1     Port 2 impedance
     7 Recip           No                         -1     Port is reciprocal
     8 NFmin           ''                         13     Minimum noise figure in dB
     9 Rn              ''                          1     Noise resistance
    10 Sopt            ''                         -1     Optimum noise match S-Parameter
    11 Temp            ''                         12     Device noise temperature
    12 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    13 ImpMode         ''                         -1     Convolution mode
    14 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    15 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    16 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    17 ImpWindow       ''                         -1     Smoothing window
    18 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    19 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

S3P       S3P        5
     1 File            ''                         -1     File Name
     2 Type            Type1                      -1     File Type
     3 InterpMode      Mode0                      -1     Interpolation Mode
     4 InterpDom       ID0                        -1     Interpolation Domain
     5 Temp            ''                         12     Temperature
END_ELEMENT

S3P_Eqn   S3P_Eqn   25
     1 S[1,1]          ''                         -1     S-parameter
     2 S[1,2]          ''                         -1     S-parameter
     3 S[1,3]          ''                         -1     S-parameter
     4 S[2,1]          ''                         -1     S-parameter
     5 S[2,2]          ''                         -1     S-parameter
     6 S[2,3]          ''                         -1     S-parameter
     7 S[3,1]          ''                         -1     S-parameter
     8 S[3,2]          ''                         -1     S-parameter
     9 S[3,3]          ''                         -1     S-parameter
    10 Z[1]            ''                          1     Port 1 impedance
    11 Z[2]            ''                          1     Port 2 impedance
    12 Z[3]            ''                          1     Port 3 impedance
    13 Recip           No                         -1     Port is reciprocal
    14 NFmin           ''                         13     Minimum noise figure in dB
    15 Rn              ''                          1     Noise resistance
    16 Sopt            ''                         -1     Optimum noise match S-Parameter
    17 Temp            ''                         12     Device noise temperature
    18 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    19 ImpMode         ''                         -1     Convolution mode
    20 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    21 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    22 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    23 ImpWindow       ''                         -1     Smoothing window
    24 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    25 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

S4P       S4P        5
     1 File            ''                         -1     File Name
     2 Type            Type1                      -1     File Type
     3 InterpMode      Mode0                      -1     Interpolation Mode
     4 InterpDom       ID0                        -1     Interpolation Domain
     5 Temp            ''                         12     Temperature
END_ELEMENT

S4P_Eqn   S4P_Eqn   33
     1 S[1,1]          ''                         -1     S-parameter
     2 S[1,2]          ''                         -1     S-parameter
     3 S[1,3]          ''                         -1     S-parameter
     4 S[1,4]          ''                         -1     S-parameter
     5 S[2,1]          ''                         -1     S-parameter
     6 S[2,2]          ''                         -1     S-parameter
     7 S[2,3]          ''                         -1     S-parameter
     8 S[2,4]          ''                         -1     S-parameter
     9 S[3,1]          ''                         -1     S-parameter
    10 S[3,2]          ''                         -1     S-parameter
    11 S[3,3]          ''                         -1     S-parameter
    12 S[3,4]          ''                         -1     S-parameter
    13 S[4,1]          ''                         -1     S-parameter
    14 S[4,2]          ''                         -1     S-parameter
    15 S[4,3]          ''                         -1     S-parameter
    16 S[4,4]          ''                         -1     S-parameter
    17 Z[1]            ''                          1     Port 1 impedance
    18 Z[2]            ''                          1     Port 2 impedance
    19 Z[3]            ''                          1     Port 3 impedance
    20 Z[4]            ''                          1     Port 4 impedance
    21 Recip           No                         -1     Port is reciprocal
    22 NFmin           ''                         13     Minimum noise figure in dB
    23 Rn              ''                          1     Noise resistance
    24 Sopt            ''                         -1     Optimum noise match S-Parameter
    25 Temp            ''                         12     Device noise temperature
    26 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    27 ImpMode         ''                         -1     Convolution mode
    28 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    29 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    30 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    31 ImpWindow       ''                         -1     Smoothing window
    32 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    33 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

S5P       S5P        5
     1 File            ''                         -1     File Name
     2 Type            Type1                      -1     File Type
     3 InterpMode      Mode0                      -1     Interpolation Mode
     4 InterpDom       ID0                        -1     Interpolation Domain
     5 Temp            ''                         12     Temperature
END_ELEMENT

S5P_Eqn   S5P_Eqn   43
     1 S[1,1]          ''                         -1     S-parameter
     2 S[1,2]          ''                         -1     S-parameter
     3 S[1,3]          ''                         -1     S-parameter
     4 S[1,4]          ''                         -1     S-parameter
     5 S[1,5]          ''                         -1     S-parameter
     6 S[2,1]          ''                         -1     S-parameter
     7 S[2,2]          ''                         -1     S-parameter
     8 S[2,3]          ''                         -1     S-parameter
     9 S[2,4]          ''                         -1     S-parameter
    10 S[2,5]          ''                         -1     S-parameter
    11 S[3,1]          ''                         -1     S-parameter
    12 S[3,2]          ''                         -1     S-parameter
    13 S[3,3]          ''                         -1     S-parameter
    14 S[3,4]          ''                         -1     S-parameter
    15 S[3,5]          ''                         -1     S-parameter
    16 S[4,1]          ''                         -1     S-parameter
    17 S[4,2]          ''                         -1     S-parameter
    18 S[4,3]          ''                         -1     S-parameter
    19 S[4,4]          ''                         -1     S-parameter
    20 S[4,5]          ''                         -1     S-parameter
    21 S[5,1]          ''                         -1     S-parameter
    22 S[5,2]          ''                         -1     S-parameter
    23 S[5,3]          ''                         -1     S-parameter
    24 S[5,4]          ''                         -1     S-parameter
    25 S[5,5]          ''                         -1     S-parameter
    26 Z[1]            ''                          1     Port 1 impedance
    27 Z[2]            ''                          1     Port 2 impedance
    28 Z[3]            ''                          1     Port 3 impedance
    29 Z[4]            ''                          1     Port 4 impedance
    30 Z[5]            ''                          1     Port 5 impedance
    31 Recip           No                         -1     Port is reciprocal
    32 NFmin           ''                         13     Minimum noise figure in dB
    33 Rn              ''                          1     Noise resistance
    34 Sopt            ''                         -1     Optimum noise match S-Parameter
    35 Temp            ''                         12     Device noise temperature
    36 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    37 ImpMode         ''                         -1     Convolution mode
    38 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    39 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    40 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    41 ImpWindow       ''                         -1     Smoothing window
    42 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    43 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

S6P       S6P        5
     1 File            ''                         -1     File Name
     2 Type            Type1                      -1     File Type
     3 InterpMode      Mode0                      -1     Interpolation Mode
     4 InterpDom       ID0                        -1     Interpolation Domain
     5 Temp            ''                         12     Temperature
END_ELEMENT

S6P_Eqn   S6P_Eqn   55
     1 S[1,1]          ''                         -1     S-parameter
     2 S[1,2]          ''                         -1     S-parameter
     3 S[1,3]          ''                         -1     S-parameter
     4 S[1,4]          ''                         -1     S-parameter
     5 S[1,5]          ''                         -1     S-parameter
     6 S[1,6]          ''                         -1     S-parameter
     7 S[2,1]          ''                         -1     S-parameter
     8 S[2,2]          ''                         -1     S-parameter
     9 S[2,3]          ''                         -1     S-parameter
    10 S[2,4]          ''                         -1     S-parameter
    11 S[2,5]          ''                         -1     S-parameter
    12 S[2,6]          ''                         -1     S-parameter
    13 S[3,1]          ''                         -1     S-parameter
    14 S[3,2]          ''                         -1     S-parameter
    15 S[3,3]          ''                         -1     S-parameter
    16 S[3,4]          ''                         -1     S-parameter
    17 S[3,5]          ''                         -1     S-parameter
    18 S[3,6]          ''                         -1     S-parameter
    19 S[4,1]          ''                         -1     S-parameter
    20 S[4,2]          ''                         -1     S-parameter
    21 S[4,3]          ''                         -1     S-parameter
    22 S[4,4]          ''                         -1     S-parameter
    23 S[4,5]          ''                         -1     S-parameter
    24 S[4,6]          ''                         -1     S-parameter
    25 S[5,1]          ''                         -1     S-parameter
    26 S[5,2]          ''                         -1     S-parameter
    27 S[5,3]          ''                         -1     S-parameter
    28 S[5,4]          ''                         -1     S-parameter
    29 S[5,5]          ''                         -1     S-parameter
    30 S[5,6]          ''                         -1     S-parameter
    31 S[6,1]          ''                         -1     S-parameter
    32 S[6,2]          ''                         -1     S-parameter
    33 S[6,3]          ''                         -1     S-parameter
    34 S[6,4]          ''                         -1     S-parameter
    35 S[6,5]          ''                         -1     S-parameter
    36 S[6,6]          ''                         -1     S-parameter
    37 Z[1]            ''                          1     Port 1 impedance
    38 Z[2]            ''                          1     Port 2 impedance
    39 Z[3]            ''                          1     Port 3 impedance
    40 Z[4]            ''                          1     Port 4 impedance
    41 Z[5]            ''                          1     Port 5 impedance
    42 Z[6]            ''                          1     Port 6 impedance
    43 Recip           No                         -1     Port is reciprocal
    44 NFmin           ''                         13     Minimum noise figure in dB
    45 Rn              ''                          1     Noise resistance
    46 Sopt            ''                         -1     Optimum noise match S-Parameter
    47 Temp            ''                         12     Device noise temperature
    48 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    49 ImpMode         ''                         -1     Convolution mode
    50 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    51 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    52 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    53 ImpWindow       ''                         -1     Smoothing window
    54 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    55 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

S7P       S7P        5
     1 File            ''                         -1     File Name
     2 Type            Type1                      -1     File Type
     3 InterpMode      Mode0                      -1     Interpolation Mode
     4 InterpDom       ID0                        -1     Interpolation Domain
     5 Temp            ''                         12     Temperature
END_ELEMENT

S8P       S8P        5
     1 File            ''                         -1     File Name
     2 Type            Type1                      -1     File Type
     3 InterpMode      Mode0                      -1     Interpolation Mode
     4 InterpDom       ID0                        -1     Interpolation Domain
     5 Temp            ''                         12     Temperature
END_ELEMENT

S9P       S9P        5
     1 File            ''                         -1     File Name
     2 Type            Type1                      -1     File Type
     3 InterpMode      Mode0                      -1     Interpolation Mode
     4 InterpDom       ID0                        -1     Interpolation Domain
     5 Temp            ''                         12     Temperature
END_ELEMENT

SAGELIN   SAGELIN    2
     1 L               18.5mils                    5     Physical length of transmission line
     2 BW_Code         bwcode0                    -1     Code for bandwidth selection
END_ELEMENT

SAGEPAC   SAGEPAC    2
     1 L               18.5mils                    5     Physical length of transmission line
     2 BW_Code         bwcode0                    -1     Code for bandwidth selection
END_ELEMENT

SBCLIN    SBCLIN    10
     1 Subst           SSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line Width
     3 S               10.0mils                    5     Spacing Between Lines
     4 L               100.0mils                   5     Line Length
     5 Temp            ''                         12     Physical temperature
     6 W1              5.0mils                     5     (for Layout option) Width of line that connects to pin 1
     7 W2              5.0mils                     5     (for Layout option) Width of line that connects to pin 2
     8 W3              5.0mils                     5     (for Layout option) Width of line that connects to pin 3
     9 W4              5.0mils                     5     (for Layout option) Width of line that connects to pin 4
    10 P1Layer         smt_cond1                  -1     (for Layout option ) layer associated with pin 1 conductor
END_ELEMENT

SBEND     SBEND      5
     1 Subst           SSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor Width
     3 Angle           90deg                       7     Angle of Bend
     4 Temp            ''                         12     Physical temperature
     5 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

SBEND2    SBEND2     6
     1 Subst           SSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor Width
     3 Angle           90deg                       7     Angle of Bend
     4 M               0.6                        15     Miter Fraction
     5 Temp            ''                         12     Physical temperature
     6 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

SCLIN     SCLIN     10
     1 Subst           SSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line Width
     3 S               10.0mils                    5     Spacing Between Lines
     4 L               100.0mils                   5     Line Length
     5 Temp            ''                         12     Physical temperature
     6 W1              5.0mils                     5     (for Layout option) Width of line that connects to pin 1
     7 W2              5.0mils                     5     (for Layout option) Width of line that connects to pin 2
     8 W3              5.0mils                     5     (for Layout option) Width of line that connects to pin 3
     9 W4              5.0mils                     5     (for Layout option) Width of line that connects to pin 4
    10 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
END_ELEMENT

SCROS     SCROS      7
     1 Subst           SSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Conductor Width at Pin 1
     3 W2              50.0mils                    5     Conductor Width at Pin 2
     4 W3              25.0mils                    5     Conductor Width at Pin 3
     5 W4              50.0mils                    5     Conductor Width at Pin 4
     6 Temp            ''                         12     Physical temperature
     7 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
     8 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

SCURVE    SCURVE     6
     1 Subst           SSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor Width
     3 Angle           -90deg                      7     Angle Subtended by the Bend
     4 Radius          100.0mils                   5     Radius (Measured to Strip Centerline)
     5 Temp            ''                         12     Physical temperature
     6 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
     7 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

SDD10P    SDD10P     2
     1 SDD             list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0),prm("SddExplicit",7,0,(_v7)/50.0),prm("SddExplicit",8,0,(_v8)/50.0),prm("SddExplicit",9,0,(_v9)/50.0),prm("SddExplicit",10,0,(_v10)/50.0)) -2     SDD parameters
     2 C               ''                         -2     Controlling current name (repeatable)
END_ELEMENT

SDD1P     SDD1P      2
     1 SDD             list(prm("SddExplicit",1,0,(_v1)/50.0)) -2     SDD parameters
     2 C               ''                         -2     Controlling current name (repeatable)
END_ELEMENT

SDD2P     SDD2P      2
     1 SDD             list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0)) -2     SDD parameters
     2 C               ''                         -2     Controlling current name (repeatable)
END_ELEMENT

SDD3P     SDD3P      2
     1 SDD             list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0)) -2     SDD parameters
     2 C               ''                         -2     Controlling current name (repeatable)
END_ELEMENT

SDD4P     SDD4P      2
     1 SDD             list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0)) -2     SDD parameters
     2 C               ''                         -2     Controlling current name (repeatable)
END_ELEMENT

SDD5P     SDD5P      2
     1 SDD             list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0)) -2     SDD parameters
     2 C               ''                         -2     Controlling current name (repeatable)
END_ELEMENT

SDD6P     SDD6P      2
     1 SDD             list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0)) -2     SDD parameters
     2 C               ''                         -2     Controlling current name (repeatable)
END_ELEMENT

SDD7P     SDD7P      2
     1 SDD             list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0),prm("SddExplicit",7,0,(_v7)/50.0)) -2     SDD parameters
     2 C               ''                         -2     Controlling current name (repeatable)
END_ELEMENT

SDD8P     SDD8P      2
     1 SDD             list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0),prm("SddExplicit",7,0,(_v7)/50.0),prm("SddExplicit",8,0,(_v8)/50.0)) -2     SDD parameters
     2 C               ''                         -2     Controlling current name (repeatable)
END_ELEMENT

SDD9P     SDD9P      2
     1 SDD             list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0),prm("SddExplicit",7,0,(_v7)/50.0),prm("SddExplicit",8,0,(_v8)/50.0),prm("SddExplicit",9,0,(_v9)/50.0)) -2     SDD parameters
     2 C               ''                         -2     Controlling current name (repeatable)
END_ELEMENT

SFDR      SFDR       1
     1 Function        list(our_sfdr=sfdr(vout,3,nf2,1GHz,{1,0},{2,-1},50)) -1     sfdr(vout,ss_gain,noise_fig,noise_BW,fund_freq,IM_freq,ref_imped)
END_ELEMENT

SLC       SLC        2
     1 L               1.0nH                       3     Inductance
     2 C               1.0pF                       4     Capacitance
END_ELEMENT

SLCQ      SLCQ       9
     1 L               120.0nH                     3     Inductance
     2 Ql              50.0                       -1     Quality factor of L
     3 Fl              100.0MHz                    0     Frequency at which ql is given
     4 ModL            loss_freq                  -1     Loss Mode for inductor ql
     5 C               21.0pF                      4     Capacitance
     6 Qc              100.0                      -1     Quality factor of C
     7 Fc              100.0MHz                    0     Frequency at which qc is given
     8 ModC            loss_freq                  -1     Loss Mode for capacitor of qc
     9 Rdc             0.0ohm                      1     Resistance for modes 2 and 3
END_ELEMENT

SLEF      SLEF       5
     1 Subst           SSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line Width
     3 L               100.0mils                   5     Line Length
     4 Temp            ''                         12     Physical temperature
     5 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
END_ELEMENT

SLIN      SLIN       5
     1 Subst           SSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line Width
     3 L               100.0mils                   5     Line Length
     4 Temp            ''                         12     Physical temperature
     5 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
END_ELEMENT

SLINO     SLINO      6
     1 Subst           SSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line Width
     3 S               31.25mils                   5     Middle Dielectric Layer Thickness
     4 L               100.0mils                   5     Line Length
     5 Temp            ''                         12     Physical temperature
     6 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
END_ELEMENT

SLOC      SLOC       5
     1 Subst           SSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line Width
     3 L               100.0mils                   5     Line Length
     4 Temp            ''                         12     Physical temperature
     5 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
END_ELEMENT

SLSC      SLSC       5
     1 Subst           SSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Line Width
     3 L               100.0mils                   5     Line Length
     4 Temp            ''                         12     Physical temperature
     5 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
END_ELEMENT

SMITER    SMITER     4
     1 Subst           SSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor Width
     3 Temp            ''                         12     Physical temperature
     4 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
END_ELEMENT

SMT_Pad   SMT_Pad    6
     1 W               10.0mils                    5     Width of the pad
     2 L               25.0mils                    5     Length of the pad
     3 PadLayer        smt_bond                   -1     Layer of the pad
     4 SMO             5.0mils                     5     Solder mask overlap
     5 SM_Layer        smt_solder_mask            -1     Solder mask layer
     6 PO              0m                          5     Pad offset from connection pin
END_ELEMENT

SNR       SNR        1
     1 Function        list(our_snr=snr(vout,vout.noise,1GHz,{1,0})) -1     snr(vout,noise_out,noise_BW,fund_freq)
END_ELEMENT

SOCLIN    SOCLIN    11
     1 Subst           SSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor Width
     3 WO              15.0mils                    5     Conductor Offset
     4 S               31.25mils                   5     Conductor Spacing
     5 L               100.0mils                   5     Conductor Length
     6 Temp            ''                         12     Physical temperature
     7 W1              5.0mils                     5     (for Layout option) Offset from pin 1 to conductor centerline
     8 W2              5.0mils                     5     (for Layout option) Offset from pin 2 to conductor centerline
     9 W3              5.0mils                     5     (for Layout option) Offset from pin 3 to conductor centerline
    10 W4              5.0mils                     5     (for Layout option) Offset from pin 4 to conductor centerline
    11 P1Layer         smt_cond1                  -1     (for Layout option ) layer associated with pin 1 conductor
END_ELEMENT

SPDT_Dynamic SPDT_Dynamic  2
     1 Ron             0ohm                        1     On-State Resistance of Switch
     2 Roff            1Gohm                       1     Off-State Resistance of Switch
END_ELEMENT

SPDT_Static SPDT_Static 12
     1 State           1                          -1     state of switch, 0(off), 1(on)
     2 F1              ''                          0     first frequency break point
     3 F2              ''                          0     second frequency break point
     4 F3              ''                          0     third frequency break point
     5 Loss1           0.dB                       13     attenuation in dB for frequencies <=F1
     6 Loss2           0.dB                       13     attenuation in dB for F1<frequency<=F2
     7 Loss3           0.dB                       13     attenuation in dB for F2>frequency<=F3
     8 VSWR1           1.                         -1     VSWR at both ports for frequencies <=F1
     9 VSWR2           1.                         -1     VSWR at both ports for F1<frequency<=F2
    10 VSWR3           1.                         -1     VSWR at both ports for F2>frequency<=F3
    11 Isolat          100dB                      13     isolation in dB
    12 ZRef            50ohm                       1     reference impedance for all ports
END_ELEMENT

SRC       SRC        2
     1 R               1.0Mohm                     1     Series resistance
     2 C               1.0pF                       4     Capacitance
END_ELEMENT

SRL       SRL        2
     1 R               1.0mohm                     1     Series resistance
     2 L               1.0nH                       3     Inductance
END_ELEMENT

SRLC      SRLC       3
     1 R               1.0mohm                     1     Series resistance
     2 L               1.0nH                       3     Inductance
     3 C               1.0pF                       4     Capacitance
END_ELEMENT

SSCLIN    SSCLIN     9
     1 Subst           SSSub1                     -1     Substrate instance name
     2 W               25.0mils                    5     Line Width
     3 S               10.0mils                    5     Spacing Between Lines
     4 L               100.0mils                   5     Line Length
     5 Temp            ''                         12     Physical temperature
     6 W1              5.0mils                     5     (for Layout option) Width of line that connects to pin 1
     7 W2              5.0mils                     5     (for Layout option) Width of line that connects to pin 2
     8 W3              5.0mils                     5     (for Layout option) Width of line that connects to pin 3
     9 W4              5.0mils                     5     (for Layout option) Width of line that connects to pin 4
END_ELEMENT

SSLIN     SSLIN      4
     1 Subst           SSSub1                     -1     Substrate instance name
     2 W               25.0mils                    5     Line Width
     3 L               100.0mils                   5     Line Length
     4 Temp            ''                         12     Physical temperature
END_ELEMENT

SSSUB     SSSUB     10
     1 H               25.0mils                    5     Substrate thickness
     2 Er              10.0                       -1     Relative dielectric constant
     3 Mur             1                          -1     Relative permeability
     4 Cond            1.0E+306                   -1     Conductor conductivity
     5 Hu              100.0mils                   5     Cover height
     6 Hl              100.0mils                   5     Lower Ground Plane Spacing
     7 T               0m                          5     Conductor thickness
     8 TanD            0                          -1     Dielectric loss tangent
     9 Rough           0m                          5     Conductor surface roughness
    10 Cond1           cond                   -1     (for Layout option) Layer to which cond is mapped
END_ELEMENT

SSTEP     SSTEP      5
     1 Subst           SSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Conductor Width at Pin 1
     3 W2              50.0mils                    5     Conductor Width at Pin 2
     4 Temp            ''                         12     Physical temperature
     5 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

SSUB      SSUB       8
     1 Er              2.5                        -1     Relative dielectric constant
     2 Mur             1                          -1     Relative permeability
     3 B               62.5mils                    5     Ground Plane Spacing
     4 T               0m                          5     Conductor thickness
     5 Cond            1.0E+306                   -1     Conductor conductivity
     6 TanD            0                          -1     Dielectric loss tangent
     7 Cond1           cond                   -1     (for Layout option) Layer to which cond is mapped
     8 Cond2           cond2                  -1     (for Layout option) Layer to which cond2 is mapped
END_ELEMENT

SSUBO     SSUBO      9
     1 Er              2.5                        -1     Relative dielectric constant
     2 Mur             1                          -1     Relative permeability
     3 S               31.25mils                   5     Inter-layer spacing
     4 B               62.5mils                    5     Ground Plane Spacing
     5 T               0m                          5     Conductor thickness
     6 Cond            1.0E+306                   -1     Conductor conductivity
     7 TanD            0                          -1     Dielectric loss tangent
     8 Cond1           cond                   -1     (for Layout option) Layer to which cond is mapped
     9 Cond2           cond2                  -1     (for Layout option) Layer to which cond2 is mapped
END_ELEMENT

STEE      STEE       6
     1 Subst           SSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Conductor Width at Pin 1
     3 W2              50.0mils                    5     Conductor Width at Pin 2
     4 W3              25.0mils                    5     Conductor Width at Pin 3
     5 Temp            ''                         12     Physical temperature
     6 Layer           smt_cond1                  -1     (for Layout option ) conductor layer number
END_ELEMENT

S_Param   S_Param   30
     1 SweepVar        freq                       -1     Name of variable or parameter to be swept
     2 UseSweepPlan    ''                         -1     Flag to indicate use of SweepPlan
     3 SweepPlan       ''                         -1     SweepPlan instance path name for sweep values
     4 Start           1.0GHz                      0     Start frequency
     5 Stop            10.0GHz                     0     Stop frequency
     6 Step            1.0GHz                      0     Step frequency
     7 Center          ''                          0     Center frequency
     8 Span            ''                          0     Span
     9 Lin             ''                         -1     Linear sweep 
    10 Dec             ''                         -1     Number of points per decade
    11 Log             ''                         -1     Log sweep
    12 Reverse         ''                         -1     Reverse sweep
    13 Pt              ''                          0     Frequency value if its not being swept
    14 Sort            'LINEAR START STEP'        -1     Sort frequencies
    15 CalcS           yes                        -1     Calculate S-parameters
    16 CalcY           no                         -1     Calculate Y- parameters
    17 CalcZ           no                         -1     Calculate Z-parameters
    18 CalcGroupDelay  ''                         -1     Calculate group delays
    19 GroupDelayAperture 1e-4                       -1     Frequency aperture used to calculate group delay
    20 FreqConversion  No                         -1     Enable AC frequency conversion
    21 FreqConversionPort 1                          -1     S-parameter frequency conversion input port
    22 UseFiniteDiff   ''                         -1     Use finite differences for sensitivities
    23 NestLevel       2                          -1     Levels of subcircuits to output
    24 StatusLevel     2                          -1     Degree of annotation
    25 CalcNoise       no                         -1     Calculate noise parameters
    26 SortNoise       NoiseSortOff               -1     Sort Noise Contribution by: Value/1, Name/2  (default: 0/NoOutput)
    27 NoiseThresh     ''                         -1     Noise Contribution Threshold
    28 BandwidthForNoise 1.0Hz                       0     Bandwidth for noise analysis
    29 Freq            ''                          0     Frequency if not being swept
    30 Other           ''                         -1     Output string to netlist
END_ELEMENT

S_StabCircle S_StabCircle  1
     1 Function        list(our_s_stabcir=s_stab_circle(S,51)) -1     s_stab_circle(2x2 S_matrix,num_of_pts)
END_ELEMENT

SampleHoldSML SampleHoldSML  1
     1 Fnom            0Hz                         0     Nominal Input and Output Frequency
END_ELEMENT

Sampler   Sampler    4
     1 Ton             1nsec                       6     ON-State pulse width, switch in low impedance state
     2 Ron             1ohm                        1     ON-State resistance, switch in low impedance state
     3 S11             0                          -1     Input reflection coefficient
     4 Z0              50ohm                       1     Input port characteristic impedance
END_ELEMENT

SerialParallel SerialParallel  5
     1 InputRate       50KHz                       0     Serial Input Data Clock Rate
     2 LSB_First       y_n1                       -1     Serial Data Arrives with Least Significant Bit First
     3 Delay           0.0nsec                     6     Initial Synchronization Delay
     4 OutputBits      4                          -1     Number of Bits in Output Word
     5 IntegerOut      y_n1                       -1     Scale output data as integers instead of from -1 to 1
END_ELEMENT

Short     Short      5
     1 Mode            0                          -1     Mode: 0 => short, >0 => DC block, <0 => DC feed
     2 C               ''                          4     DC block capacitance (transient only)
     3 L               ''                          3     DC feed inductance(transient only)
     4 Gain            ''                         -1     Current gain
     5 wImax           ''                         10     Maximum current (warning)
END_ELEMENT

SmGamma1  SmGamma1   1
     1 Function        list(our_smg1=sm_gamma1(S)) -1     sm_gamma1(2x2 S_matrix)
END_ELEMENT

SmGamma2  SmGamma2   1
     1 Function        list(our_smg2=sm_gamma2(S)) -1     sm_gamma2(2x2 S_matrix)
END_ELEMENT

SmY1      SmY1       1
     1 Function        list(our_smy1=sm_y1(S,PortZ1)) -1     sm_y1(2x2 S_matrix, input_port_imped)
END_ELEMENT

SmY2      SmY2       1
     1 Function        list(our_smy2=sm_y2(S,PortZ2)) -1     sm_y2(2x2 S_matrix, output_port_imped)
END_ELEMENT

SmZ1      SmZ1       1
     1 Function        list(our_smz1=sm_z1(S,PortZ1)) -1     sm_z1(2x2 S_matrix, input_port_imped)
END_ELEMENT

SmZ2      SmZ2       1
     1 Function        list(our_smz2=sm_z2(S,PortZ2)) -1     sm_z2(2x2 S_matrix, output_port_imped)
END_ELEMENT

StabFact  StabFact   1
     1 Function        list(our_k=stab_fact(S))   -1     stab_fact(2x2 S_matrix)
END_ELEMENT

StabMeas  StabMeas   1
     1 Function        list(our_b=stab_meas(S))   -1     stab_meas(2x2 S_matrix)
END_ELEMENT

Statz_Model Statz_Model 57
     1 NFET            y_n1                       -1     Model Type - YES or NO
     2 PFET            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          3                          -1     1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
     4 Vto             ''                          9     Threshold voltage, V
     5 Beta            ''                         -1     Transconductance parameter, A/V^2
     6 Lambda          ''                         -1     Channel length modulation parameter, 1/V
     7 Alpha           ''                         -1     Current saturation parameter, 1/V
     8 B               ''                         -1     Doping tail extending parameter
     9 Tnom            ''                         12     Nominal ambient temperature, Celsius
    10 Idstc           ''                         -1     Ids temperature coefficient
    11 Vbi             ''                          9     Built-in gate potential, V
    12 Tau             ''                          6     Transit time under gate, S
    13 Betatce         ''                         -1     BETA Exponential Temperature Coefficient, %/Degree C
    14 Delta1          ''                          9     Capacitance saturation transition voltage parameter, V
    15 Delta2          ''                          9     Capacitance threshold transition voltage parameter, V
    16 Gscap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    17 Cgs             ''                          4     Zero-bias G-S junction Cap., F
    18 Gdcap           ''                          4     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    19 Cgd             ''                          4     Zero-bias G-D junction Cap., F
    20 Rgd             ''                          1     Gate Drain resistance, Ohm
    21 Tqm             ''                         -1     Temperature coefficient for triquint junction capacitance
    22 Vmax            ''                          9     Maximum junction voltage before capacitance limiting
    23 Fc              ''                         -1     Coefficient for forward-bias depletion cap.
    24 Rd              ''                          1     Drain ohmic resistance, Ohm
    25 Rg              ''                          1     Gate resistance, Ohm
    26 Rs              ''                          1     Source ohmic resistance, Ohm
    27 Ld              ''                          3     Drain inductance, H
    28 Lg              ''                          3     Gate inductance, H
    29 Ls              ''                          3     Source inductance, H
    30 Cds             ''                          4     Drain-source Cap., F
    31 Crf             ''                          4     Used with RC to model freq. dependent output conductance, F
    32 Rc              ''                          1     Used with CRF to model freq. dependent output conductance (0. means infinity), Ohm
    33 Gsfwd           ''                         -1     0=none 1=linear 2=diode
    34 Gsrev           ''                         -1     0=none 1=linear 2=diode
    35 Gdfwd           ''                         -1     0=none 1=linear 2=diode
    36 Gdrev           ''                         -1     0=none 1=linear 2=diode
    37 Vjr             ''                          9     Breakdown junction potential
    38 Is              ''                         10     Gate junction saturation current, A
    39 Ir              ''                         10     Gate rev saturation current, A
    40 Imax            ''                         10     Explosion current, A
    41 Xti             ''                         -1     Saturation Current Temperature Exponent
    42 N               ''                         -1     Gate junction emission coefficient
    43 Eg              ''                         -1     Energy Gap for Temperature Effect on IS
    44 Vbr             ''                          9     Gate junction reverse bias breakdown voltage (0. means infinity), V
    45 Vtotc           ''                         -1     VTO Temperature Coefficient, V/Degree C
    46 Rin             ''                          1     Channel resistance, Ohm
    47 Taumdl          y_n0                       -1     Use 2nd order Bessel polynomial to model tau effect in transient
    48 Fnc             ''                          0     Flicker noise corner frequency
    49 R               ''                         -1     Gate noise coefficient
    50 C               ''                         -1     Gate-drain noise correlation coefficient.
    51 P               ''                         -1     Drain noise coefficient
    52 wVgfwd          ''                          9     Gate junction forward bias (warning), V
    53 wBvgs           ''                          9     Gate-source reverse breakdown voltage (warning), V
    54 wBvgd           ''                          9     Gate-drain reverse breakdown voltage (warning), V
    55 wBvds           ''                          9     Drain-source breakdown voltage (warning), V
    56 wIdsmax         ''                         10     Maximum drain-source current (warning), A
    57 wPmax           ''                          8     Maximum power dissipation (warning), W
END_ELEMENT

SweepPlan SweepPlan  4
     1 SweepPlanParm   list(prm("LinearStart",1.0,10.0,1.0,)) -1     Sweep Plan Parameters
     2 UseSweepPlan    ''                         -1     Flag to indicate use of SweepPlan
     3 SweepPlan       ''                         -1     SWEEP plan instance/path name to append to sweep
     4 Sort            'LINEAR START STEP'        -1     Single point
END_ELEMENT

SwitchV   SwitchV    5
     1 Model           SWITCHVM1                  -1     Model instance name
     2 R1              1.0ohm                      1     Resistance at voltage 1
     3 V1              0.0V                        9     Voltage 1
     4 R2              1.0Mohm                     1     Resistance at voltage 2
     5 V2              1.0V                        9     Voltage 2
END_ELEMENT

SwitchV_Model SwitchV_Model  4
     1 R1              1.0ohm                      1     Resistance at voltage 1
     2 V1              0.0V                        9     Voltage 1
     3 R2              1.0Mohm                     1     Resistance at voltage 2
     4 V2              1.0V                        9     Voltage 2
END_ELEMENT

TAPIND1   TAPIND1    7
     1 N1              5.0                        -1     Number of turns between pins 1 and 3
     2 N2              10.0                       -1     Number of turns between pins 2 and 3
     3 D               210.0mils                   5     Diameter of  coil
     4 L               400.0mils                   5     Length of coil
     5 WD              32.0mils                    5     Wire diameter
     6 Rho             1.0                        -1     Metal Resistivity (Relative to copper)
     7 Temp            ''                         12     Physical temperature
END_ELEMENT

TAPIND2   TAPIND2    7
     1 N1              5.0                        -1     Number of turns between pins 1 and 3
     2 N2              10.0                       -1     Number of turns between pins 2 and 3
     3 D               210.0mils                   5     Diameter of  coil
     4 L               400.0mils                   5     Length of coil
     5 AWG             20                         -1     Wire gauge
     6 Rho             1.0                        -1     Metal Resistivity (Relative to copper)
     7 Temp            ''                         12     Physical temperature
END_ELEMENT

TEST_MEANDER_FINAL TEST_MEANDER_FINAL 16
     1 N               0                          -1     Number of points (not including mousepoint)
     2 W               10.0mils                    5     Width of meander line
     3 Subst           MSub1                      -1     Substrate
     4 Layer           smt_cond                   -1     Layer
     5 X0              0mils                       5     XOrigin of (U,V) -- not used in shape directly
     6 Y0              0mils                       5     YOrigin of (U,V) -- not used in shape directly
     7 AbsA            0deg                        7     Angle CCW of positive U axis with positive X axis -- not used in shape directly
     8 A               0deg                        7     Angle CCW between shape and PA's port angle
     9 CType           0                          -1     0=mitre, 1=circle, 2=square
    10 MP              30                         -1     Mitre percentage
    11 R               5.0mils                     5     Circle endpoint radius
    12 PA              ''                         -1     Name of pin attached to the start of this meander line -- not used in shape directly
    13 PB              ''                         -1     Name of pin attached to the end of this meander line -- not used in shape directly
    14 StripType       MICROSTRIP                 -1     Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE
    15 FixedLength     0mils                       5     Placeholder for returned fixed length generated during shape calc
    16 MovableLength   0mils                       5     Placeholder for returned movable length generated during shape calc
END_ELEMENT

TEST_MEANDER_FIXED TEST_MEANDER_FIXED 15
     1 N               0                          -1     Number of points (not including mousepoint)
     2 W               10.0mils                    5     Width of meander line
     3 Subst           MSub1                      -1     Substrate
     4 Layer           smt_cond                   -1     Layer
     5 X0              0mils                       5     XOrigin of (U,V) -- not used in shape directly
     6 Y0              0mils                       5     YOrigin of (U,V) -- not used in shape directly
     7 AbsA            0deg                        7     Angle CCW of positive U axis with positive X axis -- not used in shape directly
     8 A               0deg                        7     Angle CCW between shape and PA's port angle
     9 CType           0                          -1     0=mitre, 1=circle, 2=square
    10 MP              50                         -1     Mitre percentage
    11 R               5.0mils                     5     Circle endpoint radius
    12 PA              ''                         -1     Name of pin attached to the start of this meander line -- not used in shape directly
    13 PB              ''                         -1     Name of pin attached to the end of this meander line -- not used in shape directly
    14 StripType       MICROSTRIP                 -1     Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE
    15 FixedLength     0mils                       5     Placeholder for returned fixed length generated during shape calc
END_ELEMENT

TEST_MEANDER_MOVABLE TEST_MEANDER_MOVABLE 15
     1 N               0                          -1     Number of points (not including mousepoint)
     2 W               10.0mils                    5     Width of meander line
     3 Subst           MSub1                      -1     Substrate
     4 Layer           smt_cond                   -1     Layer
     5 X0              0mils                       5     XOrigin of (U,V) -- not used in shape directly
     6 Y0              0mils                       5     YOrigin of (U,V) -- not used in shape directly
     7 AbsA            0deg                        7     Angle CCW of positive U axis with positive X axis -- not used in shape directly
     8 A               0deg                        7     Angle CCW between shape and PA's port angle
     9 CType           0                          -1     0=mitre, 1=circle, 2=square
    10 MP              50                         -1     Mitre percentage
    11 R               5.0mils                     5     Circle endpoint radius
    12 PA              ''                         -1     Name of pin attached to the start of this meander line -- not used in shape directly
    13 PB              ''                         -1     Name of pin attached to the end of this meander line -- not used in shape directly
    14 StripType       MICROSTRIP                 -1     Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE
    15 MovableLength   0mils                       5     Placeholder for returned movable length generated during shape calc
END_ELEMENT

TF        TF         1
     1 T               1.00                       -1     turn
END_ELEMENT

TF3       TF3        2
     1 T1              1.00                       -1     turn 1
     2 T2              1.00                       -1     turn 2
END_ELEMENT

TFC       TFC       11
     1 W               25.0mils                    5     Conductor width
     2 L               10.0mils                    5     Conductor length
     3 T               0.2mils                     5     Dielectric thickness
     4 Er              5.33                       -1     Dielectric constant
     5 Rho             1.0                        -1     Metal resistivity (relative to gold)
     6 TanD            0                          -1     Dielectric loss tangent
     7 Temp            ''                         12     Physical temperature
     8 CO              5.0mils                     5     (for Layout option) Conductor overlap
     9 DO              5.0mils                     5     (for Layout option) Dielectric overlap
    10 DielLayer       smt_diel                   -1     (for Layout option) Layer on which the dielectric is drawn
    11 Cond2Layer      smt_cond2                  -1     (for Layout option) Layer on which the airbridge is drawn
END_ELEMENT

TFR       TFR        7
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               25.0mils                    5     Conductor width
     3 L               10.0mils                    5     Conductor length
     4 Rs              50.0ohm                     1     Sheet resistivity
     5 Freq            0Hz                         0     Frequency for scaling sheet resistivity
     6 Temp            ''                         12     Physical temperature
     7 CO              5.0mils                     5     (for Layout option) Conductor offset; distance from edge of conductor
END_ELEMENT

TLIN      TLIN       3
     1 Z               50.0ohm                     1     Characteristic Impedance
     2 E               90deg                       7     Electrical Length
     3 F               1GHz                        0     Reference Frequency for Electrical Length
END_ELEMENT

TLIN4     TLIN4      3
     1 Z               50.0ohm                     1     Characteristic Impedance
     2 E               90deg                       7     Electrical Length
     3 F               1GHz                        0     Reference Frequency for Electrical Length
END_ELEMENT

TLINP     TLINP     10
     1 Z               50.0ohm                     1     Characteristic Impedance
     2 L               1000.0mils                  5     Length
     3 K               2.1                        -1     Effective Dielectric Constant
     4 A               0.0001                     -1     Attenuation (dB / meter)
     5 F               1GHz                        0     Frequency for Scaling Attenuation
     6 TanD            0.002                      -1     Dielectric loss tangent
     7 Mur             1                          -1     Relative permeability
     8 TanM            0                          -1     Permeability
     9 Sigma           0                          -1     Dielectric conductivity
    10 Temp            ''                         12     Physical temperature
END_ELEMENT

TLINP4    TLINP4    10
     1 Z               50.0ohm                     1     Characteristic Impedance
     2 L               1000.0mils                  5     Length
     3 K               2.1                        -1     Effective Dielectric Constant
     4 A               0.0001                     -1     Attenuation (dB / meter)
     5 F               1GHz                        0     Frequency for Scaling Attenuation
     6 TanD            0.002                      -1     Dielectric loss tangent
     7 Mur             1                          -1     Relative permeability
     8 TanM            0                          -1     Permeability
     9 Sigma           0                          -1     Dielectric conductivity
    10 Temp            ''                         12     Physical temperature
END_ELEMENT

TLOC      TLOC       3
     1 Z               50.0ohm                     1     Characteristic Impedance
     2 E               90deg                       7     Electrical Length
     3 F               1GHz                        0     Reference Frequency for Electrical Length
END_ELEMENT

TLPOC     TLPOC     10
     1 Z               50.0ohm                     1     Characteristic Impedance
     2 L               1000.0mils                  5     Length
     3 K               2.1                        -1     Effective Dielectric Constant
     4 A               0.0001                     -1     Attenuation (dB / meter)
     5 F               1GHz                        0     Frequency for Scaling Attenuation
     6 TanD            0.002                      -1     Dielectric loss tangent
     7 Mur             1                          -1     Relative permeability
     8 TanM            0                          -1     Permeability
     9 Sigma           0                          -1     Dielectric conductivity
    10 Temp            ''                         12     Physical temperature
END_ELEMENT

TLPSC     TLPSC     10
     1 Z               50.0ohm                     1     Characteristic Impedance
     2 L               1000.0mils                  5     Length
     3 K               2.1                        -1     Effective Dielectric Constant
     4 A               0.0001                     -1     Attenuation (dB / meter)
     5 F               1GHz                        0     Frequency for Scaling Attenuation
     6 TanD            0.002                      -1     Dielectric loss tangent
     7 Mur             1                          -1     Relative permeability
     8 TanM            0                          -1     Permeability
     9 Sigma           0                          -1     Dielectric conductivity
    10 Temp            ''                         12     Physical temperature
END_ELEMENT

TLSC      TLSC       3
     1 Z               50.0ohm                     1     Characteristic Impedance
     2 E               90deg                       7     Electrical Length
     3 F               1GHz                        0     Reference Frequency for Electrical Length
END_ELEMENT

TOM_Model TOM_Model 50
     1 Idsmod          7                          -1     1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
     2 Vto             ''                          9     Threshold voltage, V
     3 Alpha           ''                         -1     Saturation voltage coefficient, 1/V
     4 Beta            ''                         -1     Transconductance coefficient, A/V^Q
     5 Tqdelta         ''                         -1     Output feedback coefficient, 1/W
     6 Tqgamma         ''                         -1     DC drain pull coefficient, dimensionless
     7 Tnom            ''                         12     Nominal ambient temperature, Celsius
     8 Q               ''                         -1     Power law exponent, dimensionless
     9 Tau             ''                          6     Conduction current delay time, S
    10 Vtotc           ''                         -1     VTO Temperature Coefficient, V/Degree C
    11 Betatce         ''                         -1     BETA Exponential Temperature Coefficient, %/Degree C
    12 Cgs             ''                          4     Zero-bias gate-source capacitance, F
    13 Cgd             ''                          4     Zero-bias gate-drain capacitance, F
    14 Vbi             ''                          9     Gate diode built-in potential, V
    15 Tqm             ''                         -1     Temperature coefficient for triquint junction capacitance
    16 Vmax            ''                          9     Maximum junction voltage before capacitance limiting
    17 Fc              ''                         -1     Depletion capacitance coefficient, dimensionless
    18 Delta1          ''                          9     Capacitance saturation transition voltage parameter, V
    19 Delta2          ''                          9     Capacitance threshold transition voltage parameter, V
    20 M               ''                         -1     Grading Coefficient
    21 Is              ''                         10     Gate diode saturation current, A
    22 N               ''                         -1     Gate diode emission coefficient, dimensionless
    23 Eg              ''                         -1     Energy Gap for Temperature Effect on IS
    24 Xti             ''                         -1     Saturation Current Temperature Exponent
    25 Vbr             ''                          9     Gate diode breakdown voltage (0. means infinity), V
    26 Rg              ''                          1     Gate ohmic resistance, Ohms
    27 Rd              ''                          1     Drain contact resistance, Ohms
    28 Rs              ''                          1     Source contact resistance, Ohms
    29 Trg1            ''                         -1     Linear temperature coefficient for RG 1/degC
    30 Trd1            ''                         -1     Linear temperature coefficient for RD 1/degC
    31 Trs1            ''                         -1     Linear temperature coefficient for RS 1/degC
    32 Cds             ''                          4     Drain source capacitance, F
    33 Rgmet           ''                          1     Gate metal resistance, Ohms
    34 Vtosc           ''                          9     Threshold voltage scaling coefficient, V
    35 Ris             ''                          1     Source end channel resistance, Ohms
    36 Rid             ''                          1     Drain end channel resistance, Ohms
    37 Rdb             ''                          1     Dispersion source output impedence (0. means infinity), Ohms
    38 Cbs             ''                          4     Dispersion source capacitance, F
    39 Fnc             ''                          0     Flicker noise corner frequency
    40 R               ''                         -1     Gate noise coefficient
    41 P               ''                         -1     Drain noise coefficient
    42 Taumdl          y_n0                       -1     Use 2nd order Bessel polynomial to model tau effect in transient
    43 Ugw             ''                          5     Unit gate width of device(default: 1um)
    44 Ngf             ''                         -1     Number of device gate fingers(default: 1)
    45 wVgfwd          ''                          9     Gate junction forward bias (warning), V
    46 wBvgs           ''                          9     Gate-source reverse breakdown voltage (warning), V
    47 wBvgd           ''                          9     Gate-drain reverse breakdown voltage (warning), V
    48 wBvds           ''                          9     Drain-source breakdown voltage (warning), V
    49 wIdsmax         ''                         10     Maximum drain-source current (warning), A
    50 wPmax           ''                          8     Maximum power dissipation (warning), W
END_ELEMENT

Tajima_Model Tajima_Model 44
     1 NFET            y_n1                       -1     Model Type - YES or NO
     2 PFET            y_n0                       -1     Model Type - YES or NO
     3 Idsmod          5                          -1     1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
     4 Vdss            ''                          9     Model 5: Drain current saturation voltage, V
     5 Vto             ''                          9     Value of V1 below which Ids = Ids(V1=VTO,Vds), V
     6 Beta2           ''                         -2     Pinch-off change with Vds, 1/V
     7 Ta              ''                         -2     Model 5: a coef
     8 Tb              ''                         -2     Model 5: b coef
     9 Tm              ''                         -2     Model 5: m coef
    10 Idss            ''                         10     Model 4: Idss value, A
    11 Rin             ''                          1     Channel resistance, Ohm
    12 Fc              ''                         -1     Coefficient for forward-bias depletion cap.
    13 Gscap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    14 Cgs             ''                          4     Zero-bias G-S junction cap., F
    15 Gdcap           ''                         -1     0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
    16 Cgd             ''                          4     Zero-bias G-D junction cap., F
    17 Rd              ''                          1     Drain ohmic resistance, Ohm
    18 Rg              ''                          1     Gate resistance, Ohm
    19 Rs              ''                          1     Source ohmic resistance, Ohm
    20 Ld              ''                          3     Drain inductance, H
    21 Lg              ''                          3     Gate inductance, H
    22 Ls              ''                          3     Source inductance, H
    23 Cds             ''                          4     Drain-source cap., F
    24 Crf             ''                          4     Used with RDS to model freq. dependent output conductance, F
    25 Rc              ''                          1     Additional output resistance for RF operation (0. means infinity), Ohm
    26 Gsfwd           ''                         -1     0=none 1=linear 2=diode
    27 Gsrev           ''                         -1     0=none 1=linear 2=diode
    28 Gdfwd           ''                         -1     0=none 1=linear 2=diode
    29 Gdrev           ''                         -1     0=none 1=linear 2=diode
    30 Vbi             ''                          9     Built-in gate potential, V
    31 Is              ''                         10     Gate junction saturation current, A
    32 Imax            ''                         10     Explosion current, A
    33 N               ''                         -1     Gate Junction emission coefficient
    34 Fnc             ''                          0     Flicker noise corner frequency
    35 R               ''                         -1     Gate noise coefficient
    36 P               ''                         -1     Drain noise coefficient
    37 C               ''                         -1     Gate-drain noise correlation coefficient.
    38 Tnom            ''                         12     Nominal ambient temperature, Celsius
    39 wVgfwd          ''                          9     Gate junction forward bias (warning), V
    40 wBvgs           ''                          9     Gate-source reverse breakdown voltage (warning), V
    41 wBvgd           ''                          9     Gate-drain reverse breakdown voltage (warning), V
    42 wBvds           ''                          9     Drain-source breakdown voltage (warning), V
    43 wIdsmax         ''                         10     Maximum drain-source current (warning), A
    44 wPmax           ''                          8     Maximum power dissipation (warning), W
END_ELEMENT

Term      Term       4
     1 Num             1                          -1     Port number
     2 Z               50ohm                       1     Reference impedance, use 1+j*0 for complex
     3 Noise           y_n1                       -1     Enable/disable port thermal noise
     4 Vdc             ''                          9     Open circuit DC voltage
END_ELEMENT

TimeDelay TimeDelay  3
     1 Delay           1.sec                       6     Time Delay
     2 RTConj          y_n0                       -1     Reverse Transmission Conjugate, Yes to apply
     3 ZRef            50.ohm                      1     Reference Impedance for All Ports
END_ELEMENT

TimeDelta TimeDelta  5
     1 Direction1      1                          -1     Direction One
     2 Direction2      1                          -1     Direction Two
     3 Thresh1         0V                          9     Thresh One
     4 Thresh2         0V                          9     Thresh Two
     5 Scale           1e+6                       -1     Scale Factor
END_ELEMENT

TimeFrq   TimeFrq    3
     1 Direction       1                          -1     Direction One
     2 Thresh          0V                          9     Thresh One
     3 Scale           1e+6                       -1     Scale Factor
END_ELEMENT

TimePeriod TimePeriod  3
     1 Direction       1                          -1     Direction One
     2 Thresh          0V                          9     Thresh One
     3 Scale           1e+6                       -1     Scale Factor
END_ELEMENT

TimeStamp TimeStamp  3
     1 Direction       1                          -1     Direction One
     2 Thresh          0V                          9     Thresh One
     3 Scale           1e+6                       -1     Scale Factor
END_ELEMENT

Tran      Tran      35
     1 StartTime       0.0nsec                     6     Initial time in this analysis
     2 StopTime        100.0nsec                   6     Final time in this analysis
     3 MaxTimeStep     1.0nsec                     6     Maximum time-step for integration
     4 MinTimeStep     ''                          6     Minimum time-step for integration
     5 LimitStepForTL  YES                        -1     Limit timestep to half of minimum transmission line delay.
     6 TimeStepControl TimeStepTruncError         -1     Timestep method
     7 TruncTol        7.0                        -1     Local truncation error overestimation factor
     8 ChargeTol       1.0e-14                    -1     Accuracy for charges in lte
     9 IntegMethod     IntegTrapezoidal           -1     Use Gear integration instead of trapezoidal
    10 MaxGearOrder    6                          -1     Maximum order for Gear integration
    11 Mu              0.5                        -1     Coefficient for mixing trapezoidal and backward Euler
    12 Freq            ''                          0     Frequency of fundamentals(repeatable)
    13 ImpApprox       NO                         -1     Use Approximate models
    14 ShortTL_Delay   1.0psec                     6     Approximate short transmission lines.
    15 ImpMaxFreq      ''                          0     Maximum frequency for device evaluation.
    16 ImpDeltaFreq    ''                          0     Sample spacing in frequency.
    17 ImpMaxPts       4096                       -1     Maximum allowed points in impulse response.
    18 ImpRelTrunc     1.0e-4                     -1     Relative impulse Response truncation factor.
    19 ImpAbsTrunc     1.0e-7                     -1     Absolute impulse Response truncation factor.
    20 ImpInterpOrder  ImpInterpOrder1            -1     Interpolation order during the convolution.
    21 ImpMode         CModeDiscrete              -1     Convolution mode.
    22 ImpWindow       WindowTypeHanning          -1     Smoothing Window.
    23 ImpNoncausalLength 32                         -1     Non-causal function impulse response order.
    24 UseInitCond     NO                         -1     Use user specified initial condition.
    25 LoadGminDC      NO                         -1     Connect every node to ground with a big resistor at initial dc analysis
    26 CheckKCL        YES                        -1     Perform KCL check for convergence.
    27 CheckOnlyDeltaV YES                        -1     Check only delta voltage for convergence.
    28 OverloadAlert   NO                         -1     Check for strange behavior at every timestep.
    29 DeviceBypass    NO                         -1     Skip device evaluation if voltage changes are small between iterations
    30 MaxIters        10                         -1     Maximum number of iterations per time-step.
    31 MaxItersDC      200                        -1     Maximum number of iterations at initial dc analysis before source stepping.
    32 DevOpPtLevel    DeviceOpNone               -1     Level of devices DC Operating Point Data to ouput
    33 StatusLevel     2                          -1     Degree of annotation
    34 NestLevel       2                          -1     Levels of subcircuits to output
    35 Other           ''                         -1     Output string to netlist
END_ELEMENT

Transformer Transformer  2
     1 N               1                          -1     turns ratio
     2 ZRef            50.ohm                      1     reference impedance for all ports
END_ELEMENT

TransformerG TransformerG  2
     1 N               1                          -1     turns ratio
     2 ZRef            50.ohm                      1     reference impedance for all ports
END_ELEMENT

TwoPort   TwoPort    7
     1 S21             1                          -1     Forward Transmission Coefficient, Complex Number: 1+j*0, polar(), dbpolar()
     2 S12             1                          -1     Reverse Transmission Coefficient, Complex Number: 1+j*0, polar(), dbpolar()
     3 S11             0                          -1     Port1 Reflection Coefficient, Complex Number: 1+j*0, polar(), dbpolar()
     4 S22             0                          -1     Port2 Reflection Coefficient, Complex Number: 1+j*0, polar(), dbpolar()
     5 ZRef            50ohm                       1     Reference Impedance for All Ports
     6 Temp            ''                         12     Temperature in degrees Celsius
     7 Delay           ''                          6     Time Delay
END_ELEMENT

UFINL     UFINL      4
     1 Subst           FSub1                      -1     Substrate instance name
     2 D               20.0mils                    5     Width of gap
     3 L               1000.0mils                  5     Length of finline
     4 Temp            ''                         12     Physical temperature
END_ELEMENT

UFINLT    UFINLT     3
     1 Subst           FSub1                      -1     Substrate instance name
     2 D               20.0mils                    5     Width of gap
     3 Temp            ''                         12     Physical temperature
END_ELEMENT

#VAR       VAR        1
#     1 Variable_Value  list(prm("VarFormStdForm",X,1.0)) -1     Variable equation
#END_ELEMENT

VBIC_Model VBIC_Model 96
     1 NPN             y_n1                       -1     Model Type - YES or NO
     2 PNP             y_n0                       -1     Model Type - YES or NO
     3 Tnom            ''                         12     Nominal ambient temperature, Celsius
     4 Rcx             ''                          1     Extrinsic Collector Resistance, Ohm
     5 Rci             ''                          1     Intrinsic Collector Resistance, Ohm
     6 Vo              ''                          9     Epi drift saturation voltage, V
     7 Gamm            ''                         -1     Epi doping parameter
     8 Hrcf            ''                         -1     High current RC factor
     9 Rbx             ''                          1     Extrinsic Base Resistance, Ohm
    10 Rbi             ''                          1     Intrinsic Base Resistance, Ohm
    11 Re              ''                          1     Emitter Resistance, Ohm
    12 Rs              ''                          1     Substrate Resistance, Ohm
    13 Rbp             ''                          1     Parasitic Base Resistance, Ohm
    14 Is              ''                         10     Transport Saturation Current, A
    15 Nf              ''                         -1     Forward Emission Coefficient
    16 Nr              ''                         -1     Reverse Emission Coefficient
    17 Fc              ''                         -1     Forward-bias Junction Cap. Threshold
    18 Cbeo            ''                          4     B-E Small Signal Cap., F
    19 Cje             ''                          4     B-E Zero-bias Junction Cap., F
    20 Pe              ''                         -1     B-E Grading Coefficient
    21 Me              ''                         -1     B-E Junction Exponent
    22 Aje             ''                         -1     B-E Capacitance Smoothing factor
    23 Cbco            ''                          4     B-C Small Signal Cap., F
    24 Cjc             ''                          4     B-C Zero-bias Junction Cap., F
    25 Qco             ''                         -1     Collector Charge at Zero-bias, C
    26 Cjep            ''                          4     B-E Zero-bias Extrinsic Cap., F
    27 Pc              ''                         -1     B-C Grading Coefficient
    28 Mc              ''                         -1     B-C Junction Exponent
    29 Ajc             ''                         -1     B-C Capacitance Smoothing factor
    30 Cjcp            ''                          4     B-C Zero-bias Extrinsic Cap., F
    31 Ps              ''                         -1     C-S Grading Coefficient
    32 Ms              ''                         -1     C-S Junction Exponent
    33 Ajs             ''                         -1     C-S Capacitance Smoothing factor
    34 Ibei            ''                         10     Ideal B-E Saturation Current
    35 Wbe             ''                         -1     Portion of Ibei from Vbei
    36 Nei             ''                         -1     Ideal B-E Emission Coefficient
    37 Iben            ''                         10     Non-ideal B-E Saturation Current
    38 Nen             ''                         -1     Non-ideal B-E Emission Coefficient
    39 Ibci            ''                         10     Ideal B-C Saturation Current
    40 Nci             ''                         -1     Ideal B-C Emission Coefficient
    41 Ibcn            ''                         10     Non-ideal B-C Saturation Current
    42 Ncn             ''                         -1     Non-ideal B-C Emission Coefficient
    43 Isp             ''                         10     Parasitic Transport Saturation Current
    44 Wsp             ''                         -1     Portion of Iccp from Vbep
    45 Nfp             ''                         -1     Parasitic Forward Emission Coefficient
    46 Ibeip           ''                         10     Ideal Parasitic B-E Saturation Current
    47 Ibenp           ''                         10     Non-ideal Parasitic B-E Saturation Current
    48 Ibcip           ''                         10     Ideal Parasitic B-C Saturation Current
    49 Ncip            ''                         -1     Ideal Parasitic B-C Emission Coefficient
    50 Ibcnp           ''                         10     Non-ideal Parasitic B-C Saturation Current
    51 Avc1            ''                         -1     B-C Weak Avalanche Parameter 1
    52 Avc2            ''                         -1     B-C Weak Avalanche Parameter 2
    53 Ncnp            ''                         -1     Non-ideal Parasitic B-C Emission Coefficient
    54 Vef             ''                          9     Forward Early Voltage (0. Means Infinity), V
    55 Ver             ''                          9     Reverse Early Voltage (0. Means Infinity), V
    56 Ikf             ''                         10     Forward Knee Current, A
    57 Ikr             ''                         10     Reverse Knee Current, A
    58 Ikp             ''                         10     Parasitic Knee Current, A
    59 Tf              ''                          6     Ideal Forward Transit Time, S
    60 Qtf             ''                         -1     Variation of TF with Base-Width Modulation
    61 Xtf             ''                         -1     Coefficient of Bias Dependence for TF
    62 Vtf             ''                         -1     Coefficient of Vbc Dependence for TF
    63 Itf             ''                         -1     Coefficient of Icc Dependence for TF
    64 Tr              ''                          6     Ideal Reverse Transit Time, S
    65 Td              ''                          6     Forward Excess-Phase Delay Time, S
    66 Kfn             ''                         -1     Flicker Noise Coefficient
    67 Afn             ''                         -1     Flicker Noise Exponent
    68 Bfn             ''                         -1     Flicker Noise Frequency Exponent
    69 Xre             ''                         -1     Temperature Exponent of Emitter Resistance
    70 Xrb             ''                         -1     Temperature Exponent of Base Resistance
    71 Xrc             ''                         -1     Temperature Exponent of Collector Resistance
    72 Xrs             ''                         -1     Temperature Exponent of Substrate Resistance
    73 Xvo             ''                         -1     Temperature Exponent of VO
    74 Ea              ''                         -1     Activation Energy for IS, eV
    75 Eaie            ''                         -1     Activation Energy for IBEI, eV
    76 Eaic            ''                         -1     Activation Energy for IBCI/IBEIP, eV
    77 Eais            ''                         -1     Activation Energy for IBCIP, eV
    78 Eane            ''                         -1     Activation Energy for IBEN, eV
    79 Eanc            ''                         -1     Activation Energy for IBCN/IBENP, eV
    80 Eans            ''                         -1     Activation Energy for IBCNP, eV
    81 Xis             ''                         -1     Temperature Exponent of IS
    82 Xii             ''                         -1     Temperature Exponent of IBEI/IBCI/IBEIP/IBCIP
    83 Xin             ''                         -1     Temperature Exponent of IBEN/IBCN/IBENP/IBCNP
    84 Tnf             ''                         -1     Temperature Coefficient of NF
    85 Tavc            ''                         -1     Temperature Coefficient of TAVC
    86 Rth             ''                          1     Thermal Resistance, Ohm
    87 Cth             ''                          4     Thermal Capacitance, F
    88 Imax            ''                         10     Explosion current, A
    89 wVsubfwd        ''                          9     Substrate Junction Forward Bias (warning), V
    90 wBvsub          ''                          9     Substrate Junction Reverse Breakdown Voltage (warning), V
    91 wBvbe           ''                          9     Base-Emitter Reverse Breakdown Voltage (warning), V
    92 wBvbc           ''                          9     Base-Collector Reverse Breakdown Voltage (warning), V
    93 wVbcfwd         ''                          9     Base-Collector Forward Bias (warning), V
    94 wIbmax          ''                         10     Maximum Base Current (warning), A
    95 wIcmax          ''                         10     Maximum Collector Current (warning), A
    96 wPmax           ''                          8     Maximum Power Dissipation (warning), W
END_ELEMENT

VBIC_NPN  VBIC_NPN   5
     1 Model           VBICM1                     -1     Model instance name
     2 Scale           ''                         -1     Scaling Factor
     3 Region          ''                         -1     DC operating region, 0=off, 1=on, 2=rev, 3=sat
     4 Temp            ''                         12     Device operating temperature
     5 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

VBIC_PNP  VBIC_PNP   5
     1 Model           VBICM1                     -1     Model instance name
     2 Scale           ''                         -1     Scaling Factor
     3 Region          ''                         -1     DC operating region, 0=off, 1=on, 2=rev, 3=sat
     4 Temp            ''                         12     Device operating temperature
     5 Mode            simtype_nonlin             -1     Simulation Mode for This Device
END_ELEMENT

VCCS      VCCS       5
     1 G               1S                          2     Complex transconductance, e.g. polar(1 S, 45), or P(j*omega)/Q(j*omega)
     2 T               1.0nsec                     6     Time delay
     3 R1              1e100ohm                    1     Input Resistance
     4 R2              1e100ohm                    1     Output Resistance
     5 F               0.0GHz                      0     Frequency at which G magnitude is down 3 dB
END_ELEMENT

VCCS_Z    VCCS_Z     4
     1 Gain            1                          -1     Constant gain term
     2 Num             1                          -1     Numerator coefficients of transfer function
     3 Den             list(1,sqrt(2),1)          -1     Denominator coefficients of transfer function
     4 TimeStep        timestep                    6     Sampling time period
END_ELEMENT

VCO       VCO        6
     1 Kv              1.0KHz                      0     Frequency Tuning Sensitivity (Hz/Volt)
     2 Freq            1GHz                        0     Fundamental Frequency
     3 P               (-j*dbmtow(0))              8     Power into Rout Load at Fundamental Frequency, complex value
     4 Rout            50ohm                       1     Output Resistance
     5 Delay           timestep                    6     Transit Time Delay Added to Input Tuning Voltage
     6 Harmonics       'list(-0.01, 0.002)'       -1     Ratio of Harmonic Voltage to Fundamental Voltage, complex value
END_ELEMENT

VCO_DivideByN VCO_DivideByN  6
     1 VCO_Freq        '(10MHz * _v1)'             0     Frequency Deviation from F0, (function of _v1)
     2 F0              1GHz                        0     VCO Center Frequency
     3 N               10                         -1     Nominal Divide Number (with dN = 0)
     4 Rout            50ohm                       1     Output Resistance of VCO
     5 Power           (dbmtow(0))                 8     Output Power into Rout Load
     6 Delay           50nsec                      6     Transit Time Delay Added to Input Tuning Voltage
END_ELEMENT

VCVS      VCVS       5
     1 G               1                          -1     Complex voltage gain, e.g. polar(10, 45), or P(j*omega)/Q(j*omega)
     2 T               1.0nsec                     6     Time delay
     3 R1              1e100ohm                    1     Input Resistance
     4 R2              0ohm                        1     Output Resistance
     5 F               0.0GHz                      0     Frequency at which G magnitude is down 3 dB
END_ELEMENT

VCVS_Z    VCVS_Z     4
     1 Gain            1                          -1     Constant gain term
     2 Num             1                          -1     Numerator coefficients of transfer function
     3 Den             list(1,sqrt(2),1)          -1     Denominator coefficients of transfer function
     4 TimeStep        timestep                    6     Sampling time period
END_ELEMENT

VIA       VIA        8
     1 D1              15.0mils                    5     Diameter at pin n1
     2 D2              10.0mils                    5     Diameter at pin n2
     3 H               25.0mils                    5     Substrate thickness
     4 T               0.15mils                    5     Conductor thickness
     5 W               10.0mils                    5     (for Layout option) Width of conductor attached to via hole
     6 Cond1Layer      cond                   -1     (for Layout option) Layer on which the bottom transitional metal is drawn
     7 HoleLayer       hole                   -1     (for Layout option) Layer on which the via-hole is drawn
     8 Cond2Layer      cond2                  -1     (for Layout option) Layer on which the top transitional metal is drawn
END_ELEMENT

VIA2      VIA2       9
     1 D               15.0mils                    5     Hole diameter
     2 H               25.0mils                    5            Substrate thickness
     3 T               0.15mils                    5     Metal thickness
     4 Rho             1.0                        -1     Metal resistivity (relative to gold)
     5 W               25.0mils                    5     Width of the via pad (assumed square)
     6 Temp            ''                         12     Physical temperature
     7 Cond1Layer      cond                   -1     (for Layout option) Layer on which the bottom transitional metal is drawn
     8 HoleLayer       hole                   -1     (for Layout option) Layer on which the via-hole is drawn
     9 Cond2Layer      cond2                  -1     (for Layout option) Layer on which the top transitional metal is drawn
END_ELEMENT

VIAGND      VIAGND   10
     1 Subst           MSub1                      -1     Substrate instance name
     2 D               15.0mils                    5     Hole diameter
     3 T               0.15mils                    5     Metal thickness
     4 Rho             1.0                        -1     Metal resistivity (relative to gold)
     5 W               25.0mils                    5     Width of the via pad (assumed square)
     6 Temp            ''                         12     Physical temperature
     7 Cond1Layer      cond                       -1     (for Layout option) Layer on which the bottom transitional metal is drawn
     8 HoleLayer       hole                       -1     (for Layout option) Layer on which the via-hole is drawn
     9 PO              0m                          5     Pad offset from connection pin
    10 Pad             ''                         -1     Pad Shape
END_ELEMENT

VIAHS     VIAHS      12
     1 D               15.0mils                    5     Diameter of via hole
     2 ViaType         Blind                      -1     Type of Via Drill Hole (Blind or ThruHole)
     3 H               25.0mils                    5     Substrate thickness
     4 T               0.15mils                    5     Conductor thickness
     5 Dpad1           25.0mils                    5     (for Layout option) Width of via pad at pin 1
     6 Dpad2           20.0mils                    5     (for Layout option) Width of via pad at pin 2
     7 Angle           90.0deg                     7     (for Layout option) Angle betwen via pads
     8 Cond1Layer      cond                   -1     (for Layout option) Layer on which the pad at pin 1 is drawn
     9 HoleLayer       hole                   -1     (for Layout option) Layer on which the via hole is drawn
    10 Cond2Layer      cond2                  -1     (for Layout option) Layer on which the pad at pin 2 is drawn
    11 StartLayer      cond                   -1     (for Layout option) Start Layer for a Blind Via
    12 StopLayer       cond2                  -1     (for Layout option) Stop Layer for a Blind Via
END_ELEMENT

VIASC     VIASC      12
     1 D               15.0mils                    5     Diameter of via hole
     2 ViaType         Blind                      -1     Type of Via Drill Hole (Blind or ThruHole)
     3 H               25.0mils                    5     Substrate thickness
     4 T               0.15mils                    5     Conductor thickness
     5 Dpad1           25.0mils                    5     (for Layout option) Diameter of via pad at pin 1
     6 Dpad2           20.0mils                    5     (for Layout option) Diameter of via pad at pin 2
     7 Angle           90.0deg                     7     (for Layout option) Angle betwen via pads
     8 Cond1Layer      cond                   -1     (for Layout option) Layer on which the pad at pin 1 is drawn
     9 HoleLayer       hole                   -1     (for Layout option) Layer on which the via hole is drawn
    10 Cond2Layer      cond2                  -1     (for Layout option) Layer on which the pad at pin 2 is drawn
    11 StartLayer      cond                   -1     (for Layout option) Start Layer for a Blind Via
    12 StopLayer       cond2                  -1     (for Layout option) Stop Layer for a Blind Via
END_ELEMENT

VIAFC     VIAFC      12
     1 D               15.0mils                    5     Diameter of via hole
     2 ViaType         Blind                      -1     Type of Via Drill Hole (Blind or ThruHole)
     3 H               25.0mils                    5     Substrate thickness
     4 T               0.15mils                    5     Conductor thickness
     5 Dpad1           25.0mils                    5     (for Layout option) Diameter of via pad at pin 1
     6 Dpad2           20.0mils                    5     (for Layout option) Diameter of via pad at pin 2
     7 Angle           0.0deg                      7     (for Layout option) Angle betwen via pads
     8 Cond1Layer      cond                   -1     (for Layout option) Layer on which the pad at pin 1 is drawn
     9 HoleLayer       hole                   -1     (for Layout option) Layer on which the via hole is drawn
    10 Cond2Layer      cond2                  -1     (for Layout option) Layer on which the pad at pin 2 is drawn
    11 StartLayer      cond                   -1     (for Layout option) Start Layer for a Blind Via
    12 StopLayer       cond2                  -1     (for Layout option) Stop Layer for a Blind Via
END_ELEMENT

VIAQC     VIAQC      14
     1 D               15.0mils                    5     Diameter of via hole
     2 ViaType         Blind                      -1     Type of Via Drill Hole (Blind or ThruHole)
     3 H               25.0mils                    5     Substrate thickness
     4 T               0.15mils                    5     Conductor thickness
     5 Dpad1           25.0mils                    5     (for Layout option) Diameter of via pad at pin 1
     6 Dpad2           20.0mils                    5     (for Layout option) Diameter of via pad at pin 2
     7 Angle           90.0deg                     7     (for Layout option) Angle betwen via pads
     8 W1              15.0mils                    5     (for Layout option) Width of transmission line connected to pin 1
     9 W2              15.0mils                    5     (for Layout option) Width of transmission line connected to pin 2
    10 Cond1Layer      cond                   -1     (for Layout option) Layer on which the pad at pin 1 is drawn
    11 HoleLayer       hole                   -1     (for Layout option) Layer on which the via hole is drawn
    12 Cond2Layer      cond2                  -1     (for Layout option) Layer on which the pad at pin 2 is drawn
    13 StartLayer      cond                   -1     (for Layout option) Start Layer for a Blind Via
    14 StopLayer       cond2                  -1     (for Layout option) Stop Layer for a Blind Via
END_ELEMENT

VIASTD     VIASTD      16
     1 D               15.0mils                    5     Diameter of via hole
     2 ViaType         Blind                      -1     Type of Via Drill Hole (Blind or ThruHole)
     3 H               25.0mils                    5     Substrate thickness
     4 T               0.15mils                    5     Conductor thickness
     5 Dpad1           25.0mils                    5     (for Layout option) Diameter of via pad at pin 1
     6 Dpad2           20.0mils                    5     (for Layout option) Diameter of via pad at pin 2
     7 Angle           90.0deg                     7     (for Layout option) Angle betwen via pads
     8 W1              15.0mils                    5     (for Layout option) Width of transmission line connected to pin 1
     9 W2              15.0mils                    5     (for Layout option) Width of transmission line connected to pin 2
    10 L1              30.0mils                    5     (For Layout option) Length of tear drop of pad at pin 1
    11 L2              30.0mils                    5     (For Layout option) Length of tear drop of pad at pin 2
    12 Cond1Layer      cond                   -1     (for Layout option) Layer on which the pad at pin 1 is drawn
    13 HoleLayer       hole                   -1     (for Layout option) Layer on which the via hole is drawn
    14 Cond2Layer      cond2                  -1     (for Layout option) Layer on which the pad at pin 2 is drawn
    15 StartLayer      cond                   -1     (for Layout option) Start Layer for a Blind Via
    16 StopLayer       cond2                  -1     (for Layout option) Stop Layer for a Blind Via
END_ELEMENT

VIATTD     VIATTD      16
     1 D               15.0mils                    5     Diameter of via hole 
     2 ViaType         Blind                      -1     Type of Via Drill Hole (Blind or ThruHole)
     3 H               25.0mils                    5     Substrate thickness
     4 T               0.15mils                    5     Conductor thickness
     5 Dpad1           25.0mils                    5     (for Layout option) Diameter of via pad at pin 1
     6 Dpad2           20.0mils                    5     (for Layout option) Diameter of via pad at pin 2
     7 Angle           90.0deg                     7     (for Layout option) Angle betwen via pads
     8 W1              15.0mils                    5     (for Layout option) Width of transmission line connected to pin 1
     9 W2              15.0mils                    5     (for Layout option) Width of transmission line connected to pin 2
    10 L1              30.0mils                    5     (For Layout option) Length of tear drop of pad at pin 1
    11 L2              30.0mils                    5     (For Layout option) Length of tear drop of pad at pin 2
    12 Cond1Layer      cond                   -1     (for Layout option) Layer on which the pad at pin 1 is drawn
    13 HoleLayer       hole                   -1     (for Layout option) Layer on which the hole is drawn
    14 Cond2Layer      cond2                  -1     (for Layout option) Layer on which the pad at pin 2 is drawn
    15 StartLayer      cond                   -1     (for Layout option) Start Layer for a Blind Via
    16 StopLayer       cond2                  -1     (for Layout option) Stop Layer for a Blind Via
END_ELEMENT

VMult     VMult      3
     1 R1              50.ohm                      1     Reference Resistance for Port1
     2 R2              50.ohm                      1     Reference Resistance for Port2
     3 R3              50.ohm                      1     Reference Resistance for Port3
END_ELEMENT

VSWR      VSWR       1
     1 Function        list(our_vswr=vswr(S11))   -1     vswr(reflection_coeff)
END_ELEMENT

VSum      VSum       0
END_ELEMENT

V_1Tone   V_1Tone    8
     1 V               1V                          9     Voltage at center frequency, use polar() for phase
     2 Freq            1GHz                        0     Center frequency
     3 V_USB           ''                          9     Voltager of upper sideband small signal tone, use polar() for phase
     4 V_LSB           ''                          9     Voltage of lower sideband small-signal tone, use polar() for phase
     5 Vdc             ''                          9     DC voltage
     6 Vac             1V                          9     AC voltage, use polar() for phase
     7 SaveCurrent     y_n1                       -1     Flag to save branch current
     8 FundIndex       ''                         -1     Fundamental Frequency Index (Can Be Used Instead of Specifying Freq")
END_ELEMENT

V_AC      V_AC       4
     1 Vdc             0.0V                        9     DC voltage
     2 Vac             1.0V                        9     AC voltage, use polar() for phase
     3 Freq            freq                        0     Frequency
     4 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

V_DC      V_DC       3
     1 Vdc             1.0V                        9     DC voltage
     2 Vac             ''                          9     AC voltage, use polar() for phase
     3 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

V_Noise   V_Noise    2
     1 V_Noise         1uV                         9     Noise voltage amplitude
     2 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

V_NoiseBD V_NoiseBD  7
     1 K               ''                         -1     Multiplicative Constant
     2 Ie              ''                         -1     DC Bias Current Exponent
     3 A0              ''                         -1     Additive Constant in the Denominator
     4 A1              ''                         -1     Multiplication Factor for the Frequency
     5 Fe              ''                         -1     Frequency Exponent
     6 Elem            ''                         -1     ID of an element such as R, FET, BJT
     7 Pin             ''                         -1     Element Pin Number or Name
END_ELEMENT

V_SpectrumDataset V_SpectrumDataset  4
     1 Dataset         ''                         -1     Dataset name
     2 Expression      ''                         -1     Dataset variable or expression
     3 Freq            1GHz                        0     Fundamental frequency
     4 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

V_nHarm   V_nHarm    6
     1 Freq            1GHz                        0     Fundamental frequency
     2 V               1V                          9     N-th harmonic amplitude (use Add   for more harmonics), use polar() for phase
     3 Vdc             0V                          9     DC Voltage
     4 Vac             1V                          9     AC voltage, use polar() for phase
     5 SaveCurrent     y_n1                       -1     Flag to save branch current
     6 FundIndex       ''                         -1     Fundamental Frequency Index (Can Be Used Instead of Specifying Freq")
END_ELEMENT

V_nTone   V_nTone    5
     1 Freq            1GHz                        0     N-th frequency tone (use Add   for more tones)
     2 V               1V                          9     Corresponding N-th tone amplitude, (use Add   for more amplitudes), use polar() for phase
     3 Vdc             0V                          9     DC Voltage
     4 Vac             1V                          9     AC voltage, use polar() for phase
     5 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

Vcor      Vcor       1
     1 Function        list(our_vcor=vcor(icor,PortZ)) -1     vcor(current_correlation, port_imped)
END_ELEMENT

Vf_Pulse  Vf_Pulse  10
     1 Vpeak           1V                          9     Peak amplitude
     2 Vdc             0V                          9     DC offset
     3 Freq            1GHz                        0     Frequency
     4 Width           0.3nsec                     6     Pulse width
     5 Rise            0.1nsec                     6     Rise time
     6 Fall            0.1nsec                     6     Fall time
     7 Delay           0nsec                       6     Time delay
     8 Weight          y_n0                       -1     Gibbs Phenomenon
     9 Harmonics       16                         -1     Number of harmonics
    10 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

Vf_Sawtooth Vf_Sawtooth  7
     1 Vpeak           1V                          9     Peak amplitude
     2 Vdc             0V                          9     DC component
     3 Freq            1GHz                        0     Frequency
     4 Delay           0nsec                       6     Time delay
     5 Weight          y_n0                       -1     Gibbs Phenomenon
     6 Harmonics       16                         -1     Number of harmonics
     7 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

Vf_Square Vf_Square  9
     1 Vpeak           1V                          9     Peak amplitude
     2 Vdc             0V                          9     DC component
     3 Freq            1GHz                        0     Frequency
     4 Rise            0.1nsec                     6     Rise time
     5 Fall            0.1nsec                     6     Fall time
     6 Delay           0nsec                       6     Time delay
     7 Weight          y_n0                       -1     Gibbs Phenomenon
     8 Harmonics       16                         -1     Number of harmonics
     9 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

Vf_Triangle Vf_Triangle  6
     1 Vpeak           1V                          9     Peak amplitude
     2 Vdc             0V                          9     DC component
     3 Freq            1GHz                        0     Frequency
     4 Delay           0nsec                       6     Time delay
     5 Harmonics       16                         -1     Number of harmonics
     6 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

Vfc       Vfc        1
     1 Function        list(our_vfc=vfc(vout,0,{1,0})) -1     vfc(positive_voltage,negative_voltage,desired_harm_freq)
END_ELEMENT

VfcTran   VfcTran    1
     1 Function        list(our_vfct=vfc_tran(vout,0,1GHz,1)) -1     vfc_tran(positive_voltage,negative_voltage,fund_freq,num_of_harm)
END_ELEMENT

VoltGain  VoltGain   1
     1 Function        list(our_vgain=volt_gain(S21,PortZ1,PortZ2)) -1     volt_gain(complex_transmission_coeff, input_port_imped, output_port_imped)
END_ELEMENT

Vspec     Vspec      1
     1 Function        'list(our_vspec=vout - 0)' -1     positive_voltage  - negative_voltage
END_ELEMENT

VspecTran VspecTran  1
     1 Function        list(our_vspect=vspec_tran(vout,0,1GHz,8)) -1     vspec_tran(positive_voltage,negative_voltage,fund_freq,num_of_harm)
END_ELEMENT

Vt        Vt         1
     1 Function        list(our_vt=vt(vout,0,0,10nsec,201)) -1     vt(positive_voltage,negative_voltage,tmin,tmax,num_of_pts)
END_ELEMENT

VtBitSeq  VtBitSeq   8
     1 Vlow            0V                          9     Miminium voltage level
     2 Vhigh           5V                          9     Maximum voltage level
     3 Rate            50MHz                       0     Bit Rate
     4 Rise            1nsec                       6     Rise time of pulse
     5 Fall            1nsec                       6     Fall time of pulse
     6 BitSeq          101010                     -1     Bit squence
     7 BW              ''                          0     Bandwidth
     8 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

VtDataset VtDataset 10
     1 Dataset         ''                         -1     Dataset name
     2 Expression      ''                         -1     Dataset variable or expression
     3 Freq            0GHz                        0     Carrier frequency
     4 Gain            1.0                        -1     Gain to apply to dataset values; may be complex and time varying
     5 Tmax            ''                          6     Maximum dataset time to use
     6 Toffset         ''                          6     Initial dataset time offset
     7 Tscale          ''                         -1     Time speed-up scaling factor
     8 Vdc             0V                          9     DC offset voltage
     9 Interpolation   0                          -1     Interpolation method
    10 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

VtExp     VtExp      7
     1 Vlow            0V                          9     Initial voltage
     2 Vhigh           1V                          9     Pulse voltage
     3 Delay1          0nsec                       6     Rise delay time
     4 Tau1            1nsec                       6     Rise time constant
     5 Delay2          1nsec                       6     Fall delay time
     6 Tau2            1nsec                       6     Fall time constant
     7 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

VtImpulseDT VtImpulseDT  5
     1 Vlow            0V                          9     Miminium voltage level
     2 Vhigh           1V                          9     Maximum voltage level
     3 Period          100nsec                     6     Time between repetitive impulses
     4 Delay           0nsec                       6     Time delay before first impulse
     5 Rout            1ohm                        1     Output resistance
END_ELEMENT

VtLFSR_DT VtLFSR_DT  7
     1 Vlow            0V                          9     Miminium voltage level
     2 Vhigh           1V                          9     Maximum voltage level
     3 Rate            24.3KHz                     0     Bit Rate
     4 Delay           0nsec                       6     Initial time delay to first transition
     5 Taps            bin("10000000000000100")   -1     Bits used to generate feedback
     6 Seed            bin("10101010101010101")   -1     Initial value loaded into the shift register
     7 Rout            1ohm                        1     Output resistance
END_ELEMENT

VtOneShot VtOneShot  3
     1 Delay           (timestep)                  6     Time delay from trigger until pulse starts
     2 Width           (5*timestep)                6     Pulse width
     3 Vhigh           5V                          9     Pulse voltage
END_ELEMENT

VtPWL     VtPWL      2
     1 V_Tran          '(pwl(time, 0ns,0V, 10ns,1V, 20ns,0V))'  9     pwl(time, time-voltage pairs), or pwlr(time, Ncycles, time-voltage pairs)
     2 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

VtPulse   VtPulse    9
     1 Vlow            0V                          9     Initial voltage
     2 Vhigh           1V                          9     Pulse voltage
     3 Delay           0nsec                       6     Time delay
     4 Edge            linear                     -1     Rising and falling edge type
     5 Rise            1nsec                       6     Rise time
     6 Fall            1nsec                       6     Fall time
     7 Width           3nsec                       6     Pulse width
     8 Period          10nsec                      6     Fall time
     9 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

VtPulseDT VtPulseDT  6
     1 Vlow            0V                          9     Initial voltage
     2 Vhigh           1V                          9     Pulse voltage
     3 Delay           0nsec                       6     Time delay
     4 Width           3nsec                       6     Pulse width
     5 Period          10nsec                      6     Fall time
     6 Rout            1ohm                        1     Output resistance
END_ELEMENT

VtRF_Pulse VtRF_Pulse 13
     1 Freq            1GHz                        0     RF carrier frequency
     2 Vpeak           (dbmtov(0,50))              9     Voltage envelope of pulse
     3 OffRatio        0                          -1     Linear amplitude ratio of OFF to ON portions of pulse
     4 Delay           0nsec                       6     Time delay before first pulse
     5 Rise            1nsec                       6     Rise time of pulse
     6 Fall            1nsec                       6     Fall time of pulse
     7 Width           3nsec                       6     Width of constant portion of pulse
     8 Period          100nsec                     6     Pulse repetition period
     9 Chirp           0Hz                         0     Linear frequency modulation during pulse
    10 Phase0          0deg                        7     Initial phase of pulse carrier
    11 Vdc             ''                          9     DC voltage
    12 Vac             1V                          9     AC voltage
    13 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

VtRF_Step VtRF_Step  7
     1 Freq            1GHz                        0     RF Frequency
     2 V               (polar(1,90))               9     Voltage envelope of step
     3 Delay           0nsec                       6     Time delay before step
     4 Rise            0nsec                       6     Rise time of step
     5 Vdc             ''                          9     DC voltage
     6 Vac             1V                          9     AC voltage
     7 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

VtRetrig  VtRetrig   3
     1 V               (step(1us-(time-_tt(1))))   9     User-defined waveform equation
     2 Rout            1ohm                        1     Output resistance
     3 Thresh          0.5V                        9     Trigger threshold on rising edge
END_ELEMENT

VtSFFM    VtSFFM     6
     1 Vdc             0V                          9     Initial voltage offset
     2 Amplitude       1V                          9     Amplitude of signal
     3 CarrierFreq     1GHz                        0     Carrier Frequency
     4 ModIndex        0.5                        -1     Modulation Index
     5 SignalFreq      1MHz                        0     Signal Frequency
     6 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

VtSine    VtSine     7
     1 Vdc             0V                          9     Initial voltage offset
     2 Amplitude       1V                          9     Amplitude of sinusoidal wave
     3 Freq            1GHz                        0     Frequency of sinusoidal wave
     4 Delay           0nsec                       6     Time Delay
     5 Damping         0                          -1     Damping factor
     6 Phase           0deg                        7     Phase value
     7 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

VtStep    VtStep     5
     1 Vlow            0V                          9     Initial voltage
     2 Vhigh           1V                          9     Pulse voltage
     3 Delay           0nsec                       6     Time delay
     4 Rise            1nsec                       6     Rise time
     5 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

VtTran    VtTran     1
     1 Function        list(our_vtt=vt_tran(vout,0)) -1     vt_tran(positive_voltage,negative_voltage)
END_ELEMENT

VtUserDef VtUserDef  4
     1 V_Tran          damped_sin(time)           -1     Transient voltage
     2 Vdc             ''                          9     DC voltage
     3 Vac             1V                          9     AC voltage
     4 SaveCurrent     y_n1                       -1     Flag to save branch current
END_ELEMENT

WIRE      WIRE       9
     1 D               1.0mils                     5     Wire diameter
     2 L               50.0mils                    5     Wire length
     3 Rho             1.0                        -1     Metal resistivity (relative to gold)
     4 Temp            ''                         12     Physical temperature
     5 AF              0.5                        -1     (for Layout option) Arc factor;ratio of distance between two pins to wire length
     6 CO              5.0mils                     5     (for Layout option) Conductor offset; distance from edge of conductor
     7 A1              30.0deg                     7     (for Layout option) Angle of departure from first pin
     8 A2              30.0deg                     7     (for Layout option) Angle between direction of first and second pins
     9 BondLayer       smt_bond                   -1     (for Layout option) Layer on which the ribbon is drawn
END_ELEMENT

WaveformStats WaveformStats  0
END_ELEMENT

X9TO1COR  X9TO1COR  12
     1 Z               50.0ohm                     1     Characteristic impedance of transmission line
     2 Len             10.0mils                    5     Physical length of transmission line
     3 K               2.0                        -1     Effective dielectric constant for transmission lines
     4 A               0.0                        -1     Attenuation (dB / unit length)
     5 F               1.0GHz                      0     Frequency for scaling attenuation
     6 N               1.0                        -1     Number of turns
     7 AL              1.0nH                       3     Inductance index
     8 TanD            0                          -1     Dielectric loss tangent
     9 Mur             1                          -1     Relative permeability
    10 TanM            0                          -1     Permeability
    11 Sigma           0                          -1     Dielectric conductivity
    12 Temp            ''                         12     Physical temperature
END_ELEMENT

X9TO1SLV  X9TO1SLV  12
     1 Z               50.0ohm                     1     Characteristic impedance of transmission line
     2 Len             10.0mils                    5     Physical length of transmission line
     3 K               2.0                        -1     Effective dielectric constant for transmission lines
     4 A               0.0                        -1     Attenuation (dB / unit length)
     5 F               1.0GHz                      0     Frequency for scaling attenuation
     6 Mu              1.0                        -1     Relative permeability of surrounding sleeve
     7 L               1.0nH                       3     Inductance index (per unit length) without ferrite sleeves
     8 TanD            0                          -1     Dielectric loss tangent
     9 Mur             1                          -1     Relative permeability
    10 TanM            0                          -1     Permeability
    11 Sigma           0                          -1     Dielectric conductivity
    12 Temp            ''                         12     Physical temperature
END_ELEMENT

X9TO4COR  X9TO4COR  12
     1 Z               50.0ohm                     1     Characteristic impedance of transmission line
     2 Len             10.0mils                    5     Physical length of transmission line
     3 K               2.0                        -1     Effective dielectric constant for transmission lines
     4 A               0.0                        -1     Attenuation (dB / unit length)
     5 F               1.0GHz                      0     Frequency for scaling attenuation
     6 N               1.0                        -1     Number of turns
     7 AL              1.0nH                       3     Inductance index
     8 TanD            0                          -1     Dielectric loss tangent
     9 Mur             1                          -1     Relative permeability
    10 TanM            0                          -1     Permeability
    11 Sigma           0                          -1     Dielectric conductivity
    12 Temp            ''                         12     Physical temperature
END_ELEMENT

X9TO4SLV  X9TO4SLV  12
     1 Z               50.0ohm                     1     Characteristic impedance of transmission line
     2 Len             10.0mils                    5     Physical length of transmission line
     3 K               2.0                        -1     Effective dielectric constant for transmission lines
     4 A               0.0                        -1     Attenuation (dB / unit length)
     5 F               1.0GHz                      0     Frequency for scaling attenuation
     6 Mu              1.0                        -1     Relative permeability of surrounding sleeve
     7 L               1.0nH                       3     Inductance index (per unit length) without ferrite sleeves
     8 TanD            0                          -1     Dielectric loss tangent
     9 Mur             1                          -1     Relative permeability
    10 TanM            0                          -1     Permeability
    11 Sigma           0                          -1     Dielectric conductivity
    12 Temp            ''                         12     Physical temperature
END_ELEMENT

XDB       XDB       65
     1 MaxOrder        4                          -1     Maximum combined order to be considered
     2 Freq            1.0GHz                      0     Frequency of fundamental
     3 Order           3                          -1     Maximum order of fundamental to be considered
     4 NestLevel       2                          -1     Levels of subcircuits to output
     5 StatusLevel     2                          -1     Degree of annotation
     6 FundOversample  1                          -1     Oversampling ratio for FFT
     7 Oversample      ''                         -1     Oversampling ratio for FFT (repeated)
     8 PackFFT         ''                         -1     Pack FFT in multi-tone analysis
     9 MaxIters        10                         -1     Max number of iterations
    10 GuardThresh     ''                         -1     Guard threshold
    11 SamanskiiConstant 2                          -1     Samanskii constant
    12 Restart         no                         -1     Do not use last solution as initial guess
    13 ArcLevelMaxStep 0.0                        -1     Maximum arc-length step for source-level continuation
    14 MaxStepRatio    100                        -1     Ratio of maximum to given number of steps
    15 MaxShrinkage    1.0e-5                     -1     Maximum step shrinkage
    16 OutputAllSolns  ''                         -1     Output spectra at all computed steps when sweeping
    17 ArcMaxStep      0.0                        -1     Maximum arc-length step
    18 ArcMinValue     ''                         -1     Minimum value for parameter during arclength continuation
    19 ArcMaxValue     ''                         -1     Maximum value for parameter during arclength continuation
    20 SS_Thresh       ''                         -1     Small signal spectral threshold
    21 UseAllSS_Freqs  ''                         -1     Solve for all small signal mixer sidebands (requires more memory)
    22 InputFreq       ''                         -1     Input frequency for desired SSB mixing term
    23 NLNoiseMode     ''                         -1     Flag to indicate nonlinear noise mode
    24 NLNoiseUseSweepPlan ''                         -1     Flag to indicate use of SweepPlan
    25 NoiseFreqPlan   ''                         -1     Instance/path name for noise sweep values
    26 NLNoiseStart    1.0GHz                      0     start frequency
    27 NLNoiseStop     10.0GHz                     0     stop frequency
    28 NLNoiseStep     1.0GHz                      0     step frequency
    29 NLNoiseCenter   ''                          0     center frequency
    30 NLNoiseSpan     ''                          0     span
    31 NLNoiseLin      ''                         -1     linear sweep 
    32 NLNoiseDec      ''                         -1     number of points per decade
    33 NLNoiseLog      ''                         -1     log sweep
    34 NLNoiseReverse  ''                         -1     reverse sweep
    35 NLNoisePt       ''                         -1     single frequency
    36 NLNoiseSort     'LINEAR START STEP'        -1     sort frequencies
    37 FreqForNoise    ''                          0     Noise frequency for spectral noise analysis
    38 NoiseNode       ''                         -1     Nodename to compute noise voltage (repeatable)
    39 SortNoise       NoiseSortOff               -1     Sort Noise Contribution by: Value/1, Name/2  (default: 0/NoOutput)
    40 NoiseThresh     ''                         -1     Noise Contribution Threshold
    41 IncludePortNoise ''                         -1     Include port noise in noise voltage and currents
    42 NoisyTwoPort    ''                         -1     Compute noisy two-port parameters: sopt, rn, & nfmin
    43 BandwidthForNoise ''                          0     Bandwidth for spectral noise analysis
    44 UseKrylov       ''                         -1     Use Krylov solver
    45 UseInitialAWHB  ''                         -1     Use initial AWHB stage before Krylov
    46 AWHB_WindowSize ''                         -1     AWHB window size
    47 GMRES_Restart   ''                         -1     GMRES iterations before auto-restart
    48 KrylovUsePacking ''                         -1     Use Krylov spectral packing
    49 KrylovPackingThresh ''                         -1     Krylov bandwidth threshold
    50 KrylovTightTol  ''                         -1     GMRES tolerance
    51 KrylovLooseTol  ''                         -1     Loose tolerance for Krylov loop
    52 KrylovLooseIters ''                         -1     Min number of iterations to invoke loose tolerance
    53 KrylovMaxIters  ''                         -1     Maximum number of GMRES iterations
    54 GMRES_Orthog    ''                         -1     Re-orthogonalize at every GMRES iteration
    55 GC_XdB          1                          -1     Specifies dB of compression to solve for
    56 GC_InputPort    1                          -1     Input port for XdBgc analysis
    57 GC_OutputPort   2                          -1     Output port for XdBgc analysis
    58 GC_InputFreq    1.0GHz                      0     Driving frequency at input port for XdBgc analysis
    59 GC_OutputFreq   1.0GHz                      0     Driving frequency at output port for XdBgc analysis
    60 GC_InputPowerTol 1e-3                       -1     Input power tolerance for XdBgc analysis
    61 GC_OutputPowerTol 1e-3                       -1     Output power tolerance for XdBgc analysis
    62 GC_MaxInputPower 100                        -1     Max input power (in dBm) for XdBgc analysis
    63 DoGainComp      Yes                        -1     Do gain compression flag
    64 OutputBudgetIV  ''                         -1     Output top-level pin currents and voltages
    65 Other           ''                         -1     Output string to netlist
END_ELEMENT

XFERP     XFERP      9
     1 N               1.0                        -1     Turns Ratio, N1/N2
     2 Lp              200.0nH                     3     Magnetizing Inductance
     3 Rc              1000.0ohm                   1     Core Loss Resistance
     4 K               0.9                        -1     Coefficient of Coupling
     5 R1              5.0ohm                      1     Primary Loss Resistance
     6 R2              5.0ohm                      1     Secondary Loss Resistance
     7 C1              25.0uF                      4     Primary Capacitance
     8 C2              25.0uF                      4     Secondary Capacitance
     9 C               0.1uF                       4     Interwinding Capacitance
END_ELEMENT

XFERRUTH  XFERRUTH   5
     1 N               1.0                        -1     Turns Ratio, N1/N2
     2 AL              1.0nH                       3     Inductance index
     3 Z               50.0ohm                     1     Characteristic Impedance of Transmission Line
     4 E               10.0mils                    5     Electrical Length of Transmission Line
     5 F               1.0MHz                      0     Reference Frequency for Electrical Length
END_ELEMENT

XFERTAP   XFERTAP    4
     1 N12             1.414                      -1     Turns Ratio, N1/N2
     2 N13             1.414                      -1     Turns Ratio, N1/N3
     3 L1              400.0nH                     3     Primary Winding Inductance
     4 K               0.9                        -1     Coupling Coefficient
END_ELEMENT

XFERTL1   XFERTL1   13
     1 Z               50.0ohm                     1     Characteristic impedance of transmission line
     2 Len             12.0mils                    5     Physical length of transmission line
     3 K               2.0                        -1     Effective dielectric constant of transmission line
     4 A               0.0                        -1     Attenuation of transmission line, dB per unit length
     5 F               1.0GHz                      0     Frequency for scaling attenuation
     6 N               5.0                        -1     Number of turns
     7 AL              960.0nH                     3     Inductance index
     8 Order           1                          -1     Number of transmission lines
     9 TanD            0                          -1     Dielectric loss tangent
    10 Mur             1                          -1     Relative permeability
    11 TanM            0                          -1     Permeability
    12 Sigma           0                          -1     Dielectric conductivity
    13 Temp            ''                         12     Physical temperature
END_ELEMENT

XFERTL2   XFERTL2   13
     1 Z               50.0ohm                     1     Characteristic impedance of transmission line
     2 Len             12.0mils                    5     Physical length of transmission line
     3 K               2.0                        -1     Effective dielectric constant of transmission line
     4 A               0.0                        -1     Attenuation of transmission line, dB per unit length
     5 F               1.0GHz                      0     Frequency for scaling attenuation
     6 Mu              100.0                      -1     Relative permeability of surrounding sleeve
     7 L               20.0nH                      3     Inductance (per unit length) of the line without the sleeve
     8 Order           1                          -1     Number of transmission lines
     9 TanD            0                          -1     Dielectric loss tangent
    10 Mur             1                          -1     Relative permeability
    11 TanM            0                          -1     Permeability
    12 Sigma           0                          -1     Dielectric conductivity
    13 Temp            ''                         12     Physical temperature
END_ELEMENT

XTAL1     XTAL1      5
     1 C               9.1189fF                    4     Motional capacitance
     2 L               10.0mH                      3     Motional inductance
     3 R               15.9ohm                     1     Motional resistance
     4 Cp              0.4537pF                    4     Static capacitance
     5 OT              i3                         -1     Overtone number
END_ELEMENT

XTAL2     XTAL2      5
     1 C               9.1189fF                    4     Motional capacitance
     2 F               50.0MHz                     0     Resonant frequency
     3 Q               65862.0                    -1     Unloaded Q
     4 Cp              0.4537pF                    4     Static capacitance
     5 OT              i3                         -1     Overtone number
END_ELEMENT

Y1P_Eqn   Y1P_Eqn    9
     1 Y[1,1]          ''                         -1     Y-parameter
     2 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
     3 ImpMode         ''                         -1     Convolution mode
     4 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
     5 ImpDeltaFreq    ''                          0     Sample spacing in frequency
     6 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
     7 ImpWindow       ''                         -1     Smoothing window
     8 ImpRelTol       ''                         -1     Relative impulse response truncation factor
     9 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Y2P_Eqn   Y2P_Eqn   13
     1 Y[1,1]          ''                         -1     Y-parameter
     2 Y[1,2]          ''                         -1     Y-parameter
     3 Y[2,1]          ''                         -1     Y-parameter
     4 Y[2,2]          ''                         -1     Y-parameter
     5 Recip           No                         -1     Port is reciprocal
     6 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
     7 ImpMode         ''                         -1     Convolution mode
     8 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
     9 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    10 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    11 ImpWindow       ''                         -1     Smoothing window
    12 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    13 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Y3P_Eqn   Y3P_Eqn   18
     1 Y[1,1]          ''                         -1     Y-parameter
     2 Y[1,2]          ''                         -1     Y-parameter
     3 Y[1,3]          ''                         -1     Y-parameter
     4 Y[2,1]          ''                         -1     Y-parameter
     5 Y[2,2]          ''                         -1     Y-parameter
     6 Y[2,3]          ''                         -1     Y-parameter
     7 Y[3,1]          ''                         -1     Y-parameter
     8 Y[3,2]          ''                         -1     Y-parameter
     9 Y[3,3]          ''                         -1     Y-parameter
    10 Recip           No                         -1     Port is reciprocal
    11 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    12 ImpMode         ''                         -1     Convolution mode
    13 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    14 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    15 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    16 ImpWindow       ''                         -1     Smoothing window
    17 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    18 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Y4P_Eqn   Y4P_Eqn   25
     1 Y[1,1]          ''                         -1     Y-parameter
     2 Y[1,2]          ''                         -1     Y-parameter
     3 Y[1,3]          ''                         -1     Y-parameter
     4 Y[1,4]          ''                         -1     Y-parameter
     5 Y[2,1]          ''                         -1     Y-parameter
     6 Y[2,2]          ''                         -1     Y-parameter
     7 Y[2,3]          ''                         -1     Y-parameter
     8 Y[2,4]          ''                         -1     Y-parameter
     9 Y[3,1]          ''                         -1     Y-parameter
    10 Y[3,2]          ''                         -1     Y-parameter
    11 Y[3,3]          ''                         -1     Y-parameter
    12 Y[3,4]          ''                         -1     Y-parameter
    13 Y[4,1]          ''                         -1     Y-parameter
    14 Y[4,2]          ''                         -1     Y-parameter
    15 Y[4,3]          ''                         -1     Y-parameter
    16 Y[4,4]          ''                         -1     Y-parameter
    17 Recip           No                         -1     Port is reciprocal
    18 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    19 ImpMode         ''                         -1     Convolution mode
    20 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    21 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    22 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    23 ImpWindow       ''                         -1     Smoothing window
    24 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    25 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Y5P_Eqn   Y5P_Eqn   34
     1 Y[1,1]          ''                         -1     Y-parameter
     2 Y[1,2]          ''                         -1     Y-parameter
     3 Y[1,3]          ''                         -1     Y-parameter
     4 Y[1,4]          ''                         -1     Y-parameter
     5 Y[1,5]          ''                         -1     Y-parameter
     6 Y[2,1]          ''                         -1     Y-parameter
     7 Y[2,2]          ''                         -1     Y-parameter
     8 Y[2,3]          ''                         -1     Y-parameter
     9 Y[2,4]          ''                         -1     Y-parameter
    10 Y[2,5]          ''                         -1     Y-parameter
    11 Y[3,1]          ''                         -1     Y-parameter
    12 Y[3,2]          ''                         -1     Y-parameter
    13 Y[3,3]          ''                         -1     Y-parameter
    14 Y[3,4]          ''                         -1     Y-parameter
    15 Y[3,5]          ''                         -1     Y-parameter
    16 Y[4,1]          ''                         -1     Y-parameter
    17 Y[4,2]          ''                         -1     Y-parameter
    18 Y[4,3]          ''                         -1     Y-parameter
    19 Y[4,4]          ''                         -1     Y-parameter
    20 Y[4,5]          ''                         -1     Y-parameter
    21 Y[5,1]          ''                         -1     Y-parameter
    22 Y[5,2]          ''                         -1     Y-parameter
    23 Y[5,3]          ''                         -1     Y-parameter
    24 Y[5,4]          ''                         -1     Y-parameter
    25 Y[5,5]          ''                         -1     Y-parameter
    26 Recip           No                         -1     Port is reciprocal
    27 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    28 ImpMode         ''                         -1     Convolution mode
    29 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    30 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    31 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    32 ImpWindow       ''                         -1     Smoothing window
    33 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    34 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Y6P_Eqn   Y6P_Eqn   45
     1 Y[1,1]          ''                         -1     Y-parameter
     2 Y[1,2]          ''                         -1     Y-parameter
     3 Y[1,3]          ''                         -1     Y-parameter
     4 Y[1,4]          ''                         -1     Y-parameter
     5 Y[1,5]          ''                         -1     Y-parameter
     6 Y[1,6]          ''                         -1     Y-parameter
     7 Y[2,1]          ''                         -1     Y-parameter
     8 Y[2,2]          ''                         -1     Y-parameter
     9 Y[2,3]          ''                         -1     Y-parameter
    10 Y[2,4]          ''                         -1     Y-parameter
    11 Y[2,5]          ''                         -1     Y-parameter
    12 Y[2,6]          ''                         -1     Y-parameter
    13 Y[3,1]          ''                         -1     Y-parameter
    14 Y[3,2]          ''                         -1     Y-parameter
    15 Y[3,3]          ''                         -1     Y-parameter
    16 Y[3,4]          ''                         -1     Y-parameter
    17 Y[3,5]          ''                         -1     Y-parameter
    18 Y[3,6]          ''                         -1     Y-parameter
    19 Y[4,1]          ''                         -1     Y-parameter
    20 Y[4,2]          ''                         -1     Y-parameter
    21 Y[4,3]          ''                         -1     Y-parameter
    22 Y[4,4]          ''                         -1     Y-parameter
    23 Y[4,5]          ''                         -1     Y-parameter
    24 Y[4,6]          ''                         -1     Y-parameter
    25 Y[5,1]          ''                         -1     Y-parameter
    26 Y[5,2]          ''                         -1     Y-parameter
    27 Y[5,3]          ''                         -1     Y-parameter
    28 Y[5,4]          ''                         -1     Y-parameter
    29 Y[5,5]          ''                         -1     Y-parameter
    30 Y[5,6]          ''                         -1     Y-parameter
    31 Y[6,1]          ''                         -1     Y-parameter
    32 Y[6,2]          ''                         -1     Y-parameter
    33 Y[6,3]          ''                         -1     Y-parameter
    34 Y[6,4]          ''                         -1     Y-parameter
    35 Y[6,5]          ''                         -1     Y-parameter
    36 Y[6,6]          ''                         -1     Y-parameter
    37 Recip           No                         -1     Port is reciprocal
    38 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    39 ImpMode         ''                         -1     Convolution mode
    40 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    41 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    42 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    43 ImpWindow       ''                         -1     Smoothing window
    44 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    45 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Yield     Yield     13
     1 SimInstanceName ''                         -1     Simulation component name
     2 NumIters        250                        -1     Number of Yield Optimization iterations
     3 MaxTrials       1000                       -1     Maximum number of Monte Carlo trials
     4 PPT_Mode        none                       -1     Post production tuning mode
     5 ShadowModelType none                       -1     Type of shadow model to use: none, mfp, or hpsm
     6 Seed            ''                         -1     Seed for random number generator
     7 SaveSolns       Yes                        -1     Flag to send analysis solutions to dataset
     8 SaveRandVars    No                         -1     Send random variables to dataset
     9 SaveSpecs       No                         -1     Send yieldspec values to dataset
    10 YieldSpecName   ''                         -1     Name of yield_spec to use for yield estimate (repeatable)
    11 StatusLevel     2                          -1     Degree of annotation
    12 Enable          Yes                        -1     Flag to enable controllor
    13 RestoreNomValues ''                         -1     Restores nominal values if controlling optimization
END_ELEMENT

YieldOptim YieldOptim 12
     1 SimInstanceName ''                         -1     Simulation component name
     2 NumIters        ''                         -1     Number of Yield Optimization iterations
     3 MaxTrials       ''                         -1     Maximum number of Monte Carlo trials
     4 PPT_Mode        none                       -1     Post production tuning mode
     5 ShadowModelType none                       -1     Type of shadow model to use: none, mfp, or hpsm
     6 Seed            ''                         -1     Seed for random number generator
     7 SaveSolns       No                         -1     Flag to send analysis solutions to dataset
     8 SaveRandVars    No                         -1     Send random variables to dataset
     9 SaveSpecs       No                         -1     Send yieldspec values to dataset
    10 YieldSpecName   ''                         -1     Name of yield_spec to use for yield estimate (repeatable)
    11 StatusLevel     ''                         -1     Degree of annotation
    12 RestoreNomValues ''                         -1     Restores nominal values if controlling optimization
END_ELEMENT

YieldSpec YieldSpec  9
     1 Expr            ''                         -1     Specification expression name
     2 SimInstanceName ''                         -1     Simulation component name
     3 Min             ''                         -1     Minimum acceptable spec value
     4 Max             ''                         -1     Maximum acceptable spec value
     5 Weight          ''                         -1     Weighting used in error function calculation
     6 Save            ''                         -1     Send spec value to dataset
     7 RangeVar        ''                         -1     Name of range variable
     8 RangeMin        ''                         -1     Minimum acceptable value for range variable
     9 RangeMax        ''                         -1     Maximum acceptable value for range variable
END_ELEMENT

Yin       Yin        1
     1 Function        list(our_yin=yin(S11,PortZ1)) -1     yin(reflection_coeff, input_port_imped)
END_ELEMENT

Yopt      Yopt       1
     1 Function        list(our_yopt=yopt(Sopt,PortZ1)) -1     yopt(gamma_opt, port_imped)
END_ELEMENT

Z1P_Eqn   Z1P_Eqn   10
     1 Z[1,1]          ''                         -1     Z-parameter
     2 C[1]            ''                         10     Port 1 controlling current
     3 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
     4 ImpMode         ''                         -1     Convolution mode
     5 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
     6 ImpDeltaFreq    ''                          0     Sample spacing in frequency
     7 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
     8 ImpWindow       ''                         -1     Smoothing window
     9 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    10 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Z2P_Eqn   Z2P_Eqn   15
     1 Z[1,1]          ''                         -1     Z-parameter
     2 Z[1,2]          ''                         -1     Z-parameter
     3 Z[2,1]          ''                         -1     Z-parameter
     4 Z[2,2]          ''                         -1     Z-parameter
     5 C[1]            ''                         10     Port 1 controlling current
     6 C[2]            ''                         10     Port 2 controlling current
     7 Recip           No                         -1     Port is reciprocal
     8 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
     9 ImpMode         ''                         -1     Convolution mode
    10 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    11 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    12 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    13 ImpWindow       ''                         -1     Smoothing window
    14 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    15 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Z3P_Eqn   Z3P_Eqn   21
     1 Z[1,1]          ''                         -1     Z-parameter
     2 Z[1,2]          ''                         -1     Z-parameter
     3 Z[1,3]          ''                         -1     Z-parameter
     4 Z[2,1]          ''                         -1     Z-parameter
     5 Z[2,2]          ''                         -1     Z-parameter
     6 Z[2,3]          ''                         -1     Z-parameter
     7 Z[3,1]          ''                         -1     Z-parameter
     8 Z[3,2]          ''                         -1     Z-parameter
     9 Z[3,3]          ''                         -1     Z-parameter
    10 C[1]            ''                         10     Port 1 controlling current
    11 C[2]            ''                         10     Port 2 controlling current
    12 C[3]            ''                         10     Port 3 controlling current
    13 Recip           No                         -1     Port is reciprocal
    14 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    15 ImpMode         ''                         -1     Convolution mode
    16 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    17 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    18 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    19 ImpWindow       ''                         -1     Smoothing window
    20 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    21 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Z4P_Eqn   Z4P_Eqn   29
     1 Z[1,1]          ''                         -1     Z-parameter
     2 Z[1,2]          ''                         -1     Z-parameter
     3 Z[1,3]          ''                         -1     Z-parameter
     4 Z[1,4]          ''                         -1     Z-parameter
     5 Z[2,1]          ''                         -1     Z-parameter
     6 Z[2,2]          ''                         -1     Z-parameter
     7 Z[2,3]          ''                         -1     Z-parameter
     8 Z[2,4]          ''                         -1     Z-parameter
     9 Z[3,1]          ''                         -1     Z-parameter
    10 Z[3,2]          ''                         -1     Z-parameter
    11 Z[3,3]          ''                         -1     Z-parameter
    12 Z[3,4]          ''                         -1     Z-parameter
    13 Z[4,1]          ''                         -1     Z-parameter
    14 Z[4,2]          ''                         -1     Z-parameter
    15 Z[4,3]          ''                         -1     Z-parameter
    16 Z[4,4]          ''                         -1     Z-parameter
    17 C[1]            ''                         10     Port 1 controlling current
    18 C[2]            ''                         10     Port 2 controlling current
    19 C[3]            ''                         10     Port 3 controlling current
    20 C[4]            ''                         10     Port 4 controlling current
    21 Recip           No                         -1     Port is reciprocal
    22 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    23 ImpMode         ''                         -1     Convolution mode
    24 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    25 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    26 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    27 ImpWindow       ''                         -1     Smoothing window
    28 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    29 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Z5P_Eqn   Z5P_Eqn   39
     1 Z[1,1]          ''                         -1     Z-parameter
     2 Z[1,2]          ''                         -1     Z-parameter
     3 Z[1,3]          ''                         -1     Z-parameter
     4 Z[1,4]          ''                         -1     Z-parameter
     5 Z[1,5]          ''                         -1     Z-parameter
     6 Z[2,1]          ''                         -1     Z-parameter
     7 Z[2,2]          ''                         -1     Z-parameter
     8 Z[2,3]          ''                         -1     Z-parameter
     9 Z[2,4]          ''                         -1     Z-parameter
    10 Z[2,5]          ''                         -1     Z-parameter
    11 Z[3,1]          ''                         -1     Z-parameter
    12 Z[3,2]          ''                         -1     Z-parameter
    13 Z[3,3]          ''                         -1     Z-parameter
    14 Z[3,4]          ''                         -1     Z-parameter
    15 Z[3,5]          ''                         -1     Z-parameter
    16 Z[4,1]          ''                         -1     Z-parameter
    17 Z[4,2]          ''                         -1     Z-parameter
    18 Z[4,3]          ''                         -1     Z-parameter
    19 Z[4,4]          ''                         -1     Z-parameter
    20 Z[4,5]          ''                         -1     Z-parameter
    21 Z[5,1]          ''                         -1     Z-parameter
    22 Z[5,2]          ''                         -1     Z-parameter
    23 Z[5,3]          ''                         -1     Z-parameter
    24 Z[5,4]          ''                         -1     Z-parameter
    25 Z[5,5]          ''                         -1     Z-parameter
    26 C[1]            ''                         10     Port 1 controlling current
    27 C[2]            ''                         10     Port 2 controlling current
    28 C[3]            ''                         10     Port 3 controlling current
    29 C[4]            ''                         10     Port 4 controlling current
    30 C[5]            ''                         10     Port 5 controlling current
    31 Recip           No                         -1     Port is reciprocal
    32 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    33 ImpMode         ''                         -1     Convolution mode
    34 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    35 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    36 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    37 ImpWindow       ''                         -1     Smoothing window
    38 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    39 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Z6P_Eqn   Z6P_Eqn   51
     1 Z[1,1]          ''                         -1     Z-parameter
     2 Z[1,2]          ''                         -1     Z-parameter
     3 Z[1,3]          ''                         -1     Z-parameter
     4 Z[1,4]          ''                         -1     Z-parameter
     5 Z[1,5]          ''                         -1     Z-parameter
     6 Z[1,6]          ''                         -1     Z-parameter
     7 Z[2,1]          ''                         -1     Z-parameter
     8 Z[2,2]          ''                         -1     Z-parameter
     9 Z[2,3]          ''                         -1     Z-parameter
    10 Z[2,4]          ''                         -1     Z-parameter
    11 Z[2,5]          ''                         -1     Z-parameter
    12 Z[2,6]          ''                         -1     Z-parameter
    13 Z[3,1]          ''                         -1     Z-parameter
    14 Z[3,2]          ''                         -1     Z-parameter
    15 Z[3,3]          ''                         -1     Z-parameter
    16 Z[3,4]          ''                         -1     Z-parameter
    17 Z[3,5]          ''                         -1     Z-parameter
    18 Z[3,6]          ''                         -1     Z-parameter
    19 Z[4,1]          ''                         -1     Z-parameter
    20 Z[4,2]          ''                         -1     Z-parameter
    21 Z[4,3]          ''                         -1     Z-parameter
    22 Z[4,4]          ''                         -1     Z-parameter
    23 Z[4,5]          ''                         -1     Z-parameter
    24 Z[4,6]          ''                         -1     Z-parameter
    25 Z[5,1]          ''                         -1     Z-parameter
    26 Z[5,2]          ''                         -1     Z-parameter
    27 Z[5,3]          ''                         -1     Z-parameter
    28 Z[5,4]          ''                         -1     Z-parameter
    29 Z[5,5]          ''                         -1     Z-parameter
    30 Z[5,6]          ''                         -1     Z-parameter
    31 Z[6,1]          ''                         -1     Z-parameter
    32 Z[6,2]          ''                         -1     Z-parameter
    33 Z[6,3]          ''                         -1     Z-parameter
    34 Z[6,4]          ''                         -1     Z-parameter
    35 Z[6,5]          ''                         -1     Z-parameter
    36 Z[6,6]          ''                         -1     Z-parameter
    37 C[1]            ''                         10     Port 1 controlling current
    38 C[2]            ''                         10     Port 2 controlling current
    39 C[3]            ''                         10     Port 3 controlling current
    40 C[4]            ''                         10     Port 4 controlling current
    41 C[5]            ''                         10     Port 5 controlling current
    42 C[6]            ''                         10     Port 6 controlling current
    43 Recip           No                         -1     Port is reciprocal
    44 ImpNoncausalLength ''                         -1     Non-causal function impulse response order
    45 ImpMode         ''                         -1     Convolution mode
    46 ImpMaxFreq      ''                          0     Maximum Frequency to which device is evaluated
    47 ImpDeltaFreq    ''                          0     Sample spacing in frequency
    48 ImpMaxOrder     ''                         -1     Maximum allowed impulse response order
    49 ImpWindow       ''                         -1     Smoothing window
    50 ImpRelTol       ''                         -1     Relative impulse response truncation factor
    51 ImpAbsTol       ''                         -1     Absolute impulse response truncation factor
END_ELEMENT

Zin       Zin        1
     1 Function        list(our_zin=zin(S11,PortZ1)) -1     zin(reflection_coeff, input_port_imped)
END_ELEMENT

Zopt      Zopt       1
     1 Function        list(our_zopt=zopt(Sopt,PortZ1)) -1     zopt(gamma_opt, port_imped)
END_ELEMENT

BURIEDR      BURIEDR       12
     1 L               10.0mils                   5     Resistor Length
     2 W               3.0mils                    5     Resistor Width
     3 VALUE           50ohm                      1     Resistance Value
     4 MT              10                        -1     Maximum Tolerance (%)
     5 PD              100                       -1     Power Dissipation (mW)
     6 Layer           SIGNAL_2                  -1     Resistor Conductor Layer
     7 Shape           Bar                       -1     Resistor Shape
     8 SpecType        Electric                  -1     Electric|Physical Resistor Input Specification
     9 TL              0.2mils                    5     Resistor Termination Length
    10 OW              0.2mils                    5     Resistor Overlap Width
    11 PL              1mils                      5     Rectangular Pad Length
    12 PW              1mils                      5     Rectangular Pad Width
END_ELEMENT

THIN_BR      THIN_BR       15
     1 VALUE           50ohm                      1     Resistance Value
     2 Layer           SIGNAL_2                  -1     Resistor Conductor Layer
     3 Material        Ohmega            	 -1     Thin Film Material
     4 RW              3.0mils                    5     Resistor Width
     5 RL              10.0mils                   5     Resistor Length
     6 MT              10                        -1     Maximum Tolerance (%)
     7 PD              0.100W                     8     Power Dissipation
     8 SpecType        Electric                  -1     Electric|Physical Resistor Input Specification
     9 TL              0.2mils                    5     Resistor Termination Length
    10 OW              0.2mils                    5     Resistor Overlap Width
    11 PL              1mils                      5     Rectangular Pad Length
    12 PW              1mils                      5     Rectangular Pad Width
    13 PE              0.2mils                    5     Pad Extend
    14 PO              0.2mils                    5     Pad Overlap
    15 TF              1                         -1     Laser Trimming Factor
END_ELEMENT

THICK_BR      THICK_BR       16
     1 VALUE           50ohm                      1     Resistance Value
     2 Layer           SIGNAL_3                  -1     Resistor Conductor Layer
     3 Material        msf_436_62-404            -1     Thick Film Material
     4 RW              3.0mils                    5     Resistor Width
     5 RL              10.0mils                   5     Resistor Length
     6 MT              10                        -1     Maximum Tolerance (%)
     7 PD              0.100W                     8     Power Dissipation
     8 VT              200V                       9     Voltage Rating

     9 SpecType        Electric                  -1     Electric|Physical Resistor Input Specification
    10 DX              0.0mils                    5     Resistor Mask Delta X
    11 DY              0.0mils                    5     Resistor Mask Delta Y
    12 PL              1mils                      5     Rectangular Pad Length
    13 PW              1mils                      5     Rectangular Pad Width
    14 PE              0.2mils                    5     Pad Extend
    15 PO              0.2mils                    5     Pad Overlap
    16 TF              1                         -1     Laser Trimming Factor
END_ELEMENT

EMBD_CAP    EMBD_CAP    21
    1 VALUE     50pF         4   Capacitance Value
    2 Layer     SIGNAL_3    -1  Capacitor Conductor Layer
    3 Material  Example     -1  Capacitor Material
    4 DL        20mils       5  Dielectric Length
    5 DW        20mils       5  Dielectric Width
    6 G         10mils       5  Gap between plate1 and pad2
    7 MT        10          -1  Maximum Tolerance (%)
    8 PD        0.100W       8  Power Dissipation
    9 VT        200V         9  Voltage Rating
   10 CR        0.1A        10  Current Rating
   11 N         1           -1  Capacitance Stackup
    

   12 SpecType  Electric    -1  Electric|Physical Resistor Input Specification
   13 PL        6mils        5  Rectangular Pad Length
   14 PW        25mils       5  Rectangular Pad Width
   15 DE        2mils        5  Dielectric Extent
   16 DO        2mils        5  Dielectric Overlap
   17 DX        5mils        5  Dielectric shift along X-axis
   18 P1E       2mils        5  Plate1 Extend
   19 P1O       2mils        5  Plate1 Overlap
   20 P2E       2mils        5  Plate2 Extend
   21 P2O       2mils        5  Plate2 Overlap
END_ELEMENT


EMBD_IDCAP    EMBD_IDCAP   19
    1 VALUE     50pF         4   Capacitance Value
    2 Layer     SIGNAL_3    -1  Capacitor Conductor Layer
    3 Material  Example     -1  Capacitor Material
    4 E1        10          -1  Dielectric constant of substrate layer
    5 E2        15          -1  Dielectric constant of superstrate layer
    6 E3        10          -1  Dielectric constant of cover layer 

    7 SpecType  Electric    -1  Electric|Physical Resistor Input Specification
    8 W         5.0mils      5  Finger width
    9 G         5.0mils      5  Gap between fingers
   10 Ge        5.0mils      5  Gap at end of fingers
   11 L         50.0mils     5  Length of overlapped region
   12 Np        3           -1  Number of fingers
   13 Wt        25.0mils     5  Width of the interconnect
   14 Wf        25.0mils     5  Width of the feed line
   15 OH        0mils        5  Overhang
   16 T1        0.1mils      5  Thickness of substrate layer
   17 T2        0.01mils     5  Thickness of superstrate layer
   18 T3        0.1mils      5  Thickness of cover layer
   19 T4        0.005mils    5  Conductor Thickness
END_ELEMENT

MTEE_ADS      MTEE_ADS       5
     1 Subst           MSub1                      -1     Substrate instance name
     2 W1              25.0mils                    5     Conductor width at pin 1
     3 W2              25.0mils                    5     Conductor width at pin 2
     4 W3              50.0mils                    5     Conductor width at pin 3
     5 Temp            ''                         12     Physical temperature
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MSABND_MDS    MSABND_MDS      4
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               10.0mils                    5     Conductor width
     3 Angle           45deg                       7     Angle of bend
     4 M               0.5                        -1     Miter fraction
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MSOBND_MDS    MSOBND_MDS     2
     1 Subst           MSub1                      -1     Substrate instance name
     2 W               10.0mils                    5     Conductor width
     6 AutomaticWidth  'Disabled'                 -1
END_ELEMENT

MRINDELM      MRINDELM  12
     1 Subst           MSub1                      -1     Substrate instance name
     2 Ns              7                          -1     Number of segments
     3 L1              11.4mils                    5     Length of first segment
     4 L2              9.4mils                     5     Length of second segment
     5 L3              7.4mils                     5     Length of third segment
     6 Ln              0mils                       5     Length of last segment
     7 W               0.45mils                    5     Conductor width
     8 S               0.35mils                    5     Conductor spacing
     9 Wu              0.45mils                    5     Width of underpass strip conductor
    10 Au              0.0deg                      7     Angle of departure from innermost segment
    11 UE              4.0mils                     5     Extension of bridge beyond inductor
    12 Temp            ''                         12     Physical temperature
END_ELEMENT

MRINDSBR      MRINDSBR  18
     1 Subst           MSub1                      -1     Substrate instance name
     2 Ns              7                          -1     Number of segments
     3 L1              11.4mils                    5     Length of first segment
     4 L2              9.4mils                     5     Length of second segment
     5 L3              7.4mils                     5     Length of third segment
     6 Ln              0mils                       5     Length of last segment
     7 W               0.45mils                    5     Conductor width
     8 S               0.35mils                    5     Conductor spacing
     9 Wb              0.45mils                    5     Width of underpass strip conductor
    10 Ab              0.0deg                      7     Angle of departure from innermost segment
    11 Be              4.0mils                     5     Extension of bridge beyond inductor
    12 Temp            ''                         12     Physical temperature
END_ELEMENT

MSSPLC_MDS   MSSPLC_MDS      5
     1 Subst           MSub1                      -1     Substrate instance name
     2 N               2.0                        -1     Number of turns
     3 OD              62.0mils                    5     Overall dimension
     4 W               4.0mils                     5     Conductor width
     5 S               2.0mils                     5     Conductor spacing
END_ELEMENT

MSSPLS_MDS   MSSPLS_MDS      5
     1 Subst           MSub1                      -1     Substrate instance name
     2 N               2.0                        -1     Number of turns
     3 OD              62.0mils                    5     Overall dimension
     4 W               4.0mils                     5     Conductor width
     5 S               2.0mils                     5     Conductor spacing
END_ELEMENT

MSSPLR_MDS   MSSPLR_MDS      5
     1 Subst           MSub1                      -1     Substrate instance name
     2 N               3.0                        -1     Number of turns
     3 Ro              62.0mils                    5     Inner radius
     4 W               4.0mils                     5     Conductor width
     5 S               2.0mils                     5     Conductor spacing
END_ELEMENT


MSUBST3 MSUBST3 13
     1 Er[1]           4.5                        -1     Dielectric Constant
     2 H[1]            10mils                      5     Height of Substrate
     3 TanD[1]         0                          -1     Dielectric Loss Tangent
     4 T[1]            0mils                       5     Thickness
     5 Cond[1]         1.0E+50                    -1     Conductor conductivity in Siemens/meter
     6 Er[2]           4.5                        -1     Dielectric Constant
     7 H[2]            10mils                      5     Height of Substrate
     8 TanD[2]         0                          -1     Dielectric Loss Tangent
     9 T[2]            0mils                       5     Thickness
    10 Cond[2]         1.0E+50                    -1     Conductor conductivity in Siemens/meter
    11 LayerName[1]    cond                       -1     (for Layout option) Layer to which cond is mapped
    12 LayerName[2]    cond2                      -1     (for Layout option) Layer to which cond is mapped
    13 ViaLayerName[1] diel2                      -1     (for Layout option) Layer to which via hole is mapped
END_ELEMENT
